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Michael Kaniber

Michael Kaniber appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallphysics.opticscond-mat.mtrl-sciquant-ph

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Published work

12 published item(s)

preprint2022arXiv

Plasmonics enabled atomically thin linearly polarized emitter at room temperature

Two-dimensional transition metal di-chalcogenide semiconductors provide unique possibilities to investigate strongly confined excitonic physics and a plasmonic platform integrable to such materials constitutes a hybrid system that can be of interest to enable manipulation of their cumulative optical properties. Here we report tuning of excitonic emission from monolayer WSe2, mechanically exfoliated on top of a periodic two dimensional plasmonic array of elliptical gold (Au) nanodiscs. By exploiting the polarization-dependent nature of plasmonic resonance of the nano plasmonic array (NPA), the photoluminescence (PL) emission from the overlaid monolayer WSe2 could be significantly manipulated. PL is preferentially enhanced at the NPA covered regions of the ake when excited closer to the plasmonic resonant frequencies and previously unpolarized WSe2 PL emission gained ~ 20 up to 40 % degree of linear polarization at room temperature. Obtaining significant spectral overlap between the PL spectrum of WSe2 and the polarization tunable plasmonic resonance of the NPA plays a crucial role in this observation. The results demonstrate active tunability of optical emission from WSe2 by using an otherwise passive plasmonic environment and open the possibility of achieving atomically thin linearly polarized emitters at room temperature. In addition to fundamentally interesting physics of such interactions this can be highly desirable for ultrathin orientation sensitive opto-electronic device related applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning the Optical Properties of an MoSe$_2$ Monolayer Using Nanoscale Plasmonic Antennas

Nanoplasmonic systems combined with optically-active two-dimensional materials provide intriguing opportunities to explore and control light-matter interactions at extreme sub-wavelength lengthscales approaching the exciton Bohr radius. Here, we present room- and cryogenic-temperature investigations of light-matter interactions between an MoSe$_2$ monolayer and individual lithographically defined gold dipole nanoantennas having sub-10 nm feed gaps. By progressively tuning the nanoantenna size, their dipolar resonance is tuned relative to the A-exciton transition in a proximal MoSe$_2$ monolayer achieving a total tuning of $\sim 130\;\mathrm{meV}$. Differential reflectance measurements performed on $> 100$ structures reveal an apparent avoided crossing between exciton and dipolar mode and an exciton-plasmon coupling constant of $g= 55\;\mathrm{meV}$, representing $g/(\hbarω_X)\geq3\%$ of the transition energy. This places our hybrid system in the intermediate-coupling regime where spectra exhibit a characteristic Fano-like shape, indicative of the interplay between pronounced light-matter coupling and significant damping. We also demonstrate active control of the optical response by varying the polarization of the excitation light to programmably suppress coupling to the dipole mode. We further study the emerging optical signatures of the monolayer localized at dipole nanoantennas at $10\;\mathrm{K}$. Our findings represent a key step towards realizing non-linear photonic devices based on 2D materials with potential for low-energy and ultrafast performance.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atomistic defect states as quantum emitters in monolayer MoS$_2$

Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Integrated superconducting detectors on semiconductors for quantum optics applications

Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realise highly efficient and ultrafast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20% for ~4nm thin films and single photon timing resolutions <72ps. We discuss the integration of such detectors into quantum dot loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a line width <15 $μ$eV displaced by 1mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dynamic acousto-mechanical control of a strongly coupled photonic molecule

Two-dimensional photonic crystal membranes provide a versatile planar architecture for integrated photonics to control the propagation of light on a chip employing high quality optical cavities, waveguides, beamsplitters or dispersive elements. When combined with highly non-linear quantum emitters, quantum photonic networks operating at the single photon level come within reach. Towards large-scale quantum photonic networks, selective dynamic control of individual components and deterministic interactions between different constituents are of paramount importance. This indeed calls for switching speeds ultimately on the system's native timescales. For example, manipulation via electric fields or all-optical means have been employed for switching in nanophotonic circuits and cavity quantum electrodynamics studies. Here, we demonstrate dynamic control of the coherent interaction between two coupled photonic crystal nanocavities forming a photonic molecule. By using an electrically generated radio frequency surface acoustic wave we achieve optomechanical tuning, demonstrate operating speeds more than three orders of magnitude faster than resonant mechanical approaches. Moreover, the tuning range is large enough to compensate for the inherent fabrication-related cavity mode detuning. Our findings open a route towards nanomechanically gated protocols, which hitherto have inhibited the realization in all-optical schemes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Towards on-chip generation, routing and detection of non-classical light

We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quantum dots. By introducing a temporal filtering to the signal, we are able to resonantly excite the quantum dot and detect its resonance uorescence on-chip with the integrated superconducting single photon detector.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Highly directed emission from self-assembled quantum dots into guided modes in disordered photonic crystal waveguides

We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into TE-polarised guided modes in GaAs two-dimensional photonic crystal waveguides. The local group velocity of the guided waveguide mode is probed, with values as low as $\sim 1.5\%\times c$ measured close to the slow-light band edge. By performing complementary continuous wave and time-resolved measurements with detection along, and perpendicular to the waveguide axis we probe the fraction of emission into the waveguide mode ($β$-factor). For dots randomly positioned within the unit cell of the photonic crystal waveguide our results show that the emission rate varies from $\geq 1.55$ $ns^{-1}$ close to the slow-light band edge to $\leq 0.25$ $ns^{-1}$ within the two-dimensional photonic bandgap. We measure an average Purcell-factor of $\sim 2\times$ for dots randomly distributed within the waveguide and maximum values of $β\sim 90 \%$ close to the slow light band edge. Spatially resolved measurements performed by exciting dots at a well controlled distance $0-45$ μm from the waveguide facet highlight the impact of disorder on the slow-light dispersion. Although disorder broadens the spectral width of the slow light region of the waveguide dispersion from $δE_{d}\leq 0.5$ meV to $>6$ meV, we find that emission is nevertheless primarily directed into propagating waveguide modes. The ability to control the rate and directionality of emission from isolated quantum emitters by placing them in a tailored photonic environment provides much promise for the use of slow-light phenomena to realise efficient single photon sources for quantum optics in a highly integrated setting.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to $\sim 10 nm$. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots $\sim 25 nm$ below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from $5 μm$ to $1 μm$, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length $L_i$ is varied. A splitting ratio of $50:50$ is observed for $L_i\sim 9\pm1 μm$ and $1 μm$ wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

On-chip generation, routing and detection of quantum light

Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report the on-chip generation of quantum light from individual, resonantly excited self-assembled InGaAs quantum dots, efficient routing over length scales $\geq 1$ mm via GaAs ridge waveguides and in-situ detection using evanescently coupled integrated NbN superconducting single photon detectors fabricated on the same chip. By temporally filtering the time-resolved luminescence signal stemming from single, resonantly excited quantum dots we use the prototypical quantum optical circuit to perform time-resolved excitation spectroscopy on single dots and demonstrate resonant fluorescence with a line-width of $10 \pm 1 \ μ$eV; key elements needed for the use of single photons in prototypical quantum photonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Optical study of lithographically defined, subwavelength plasmonic wires and their coupling to embedded quantum emitters

We present an optical investigation of surface plasmon polaritons propagating along nanoscale Au-wires, lithographically defined on GaAs substrates. A two-axis confocal microscope was used to perform spatially and polarization resolved measurements in order to confirm the guiding of surface plasmon polaritons over lengths ranging from $5-20 μm$ along nanowires with a lateral dimension of only $\approx 100 nm$. Finite difference time domain simulations are used to corroborate our experimental observations and highlight the potential to couple proximal quantum dot emitters to propagating plasmon modes in such extreme sub-wavelength devices. Our findings are of strong relevance for the development of semiconductor based integrated plasmonic and active quantum plasmonic nanosystems that merge quantum emitters with nanoscale plasmonic elements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides

The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the waveguide mode, a ~21x enhancement of photoluminescence intensity is observed as compared to dots in the unprocessed region of the wafer. This enhancement can be traced back to the Purcell enhanced emission of quantum dots into leaky and guided modes of the waveguide with moderate Purcell factors up to ~4x. Emission into guided modes is shown to be efficiently scattered out of the waveguide within a few microns, contributing to the out-of-plane emission and allowing the use of photonic crystal waveguides as broadband, efficiency-enhancing structures for surface-emitting diodes or single photon sources.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coupling of guided Surface Plasmon Polaritons to proximal self-assembled InGaAs Quantum Dots

We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containing near surface quantum dots clearly show that the propagating plasmon mode excites the dot, providing a new method to spatially image the surface plasmon mode. We use low temperature confocal microscopy with polarization control in the excitation and detection channel. After excitation, plasmons propagate along the waveguide and are scattered into the far field at the end. By comparing length and width evolution of the waveguide losses we determine the plasmon propagation length to be 27.5 {\pm} 1.5 μm at 830 nm (for a width of 5 μm), reducing to 13.4 {\pm} 1.7 μm for a width of 2 μm. For active structures containing low density InGaAs quantum dots at a precisely controlled distance 7-120 nm from the Au-GaAs interface, we probed the mutual coupling between the quantum dot and plasmon mode. These investigations reveal a unidirectional energy transfer from the propagating surface plasmon to the quantum dot. The exquisite control of the position and shape afforded by lithography combined with near surface QDs promises efficient on-chip generation and guiding of single plasmons for future applications in nanoscale quantum optics operating below the diffraction limit.

0 citations0 reviewsNo code linkedOpen access