Researcher profile

Jonathan J. Finley

Jonathan J. Finley contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
18works
0followers
6topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

18 published item(s)

preprint2022arXiv

Automated, deep reactive ion etching free fiber coupling to nanophotonic devices

Rapid development in integrated optoelectronic devices and quantum photonic architectures creates a need for optical fiber to chip coupling with low losses. Here we present a fast and generic approach that allows temperature stable self-aligning connections of nanophotonic devices to optical fibers. We show that the attainable precision of our approach is equal to that of DRIE-process based couplings. Specifically, the initial alignment precision is $1.2\pm 0.4μm$, the average shift caused by mating $<0.5μm$, which is in the order of the precision of the concentricity of the employed fiber, and the thermal cycling stability is $<0.2μm$. From these values the expected overall alignment offset is calculated as $1.4 \pm 0.4μm$. These results show that our process offers an easy to implement, versatile, robust and DRIE-free method for coupling photonic devices to optical fibers. It can be fully automated and is therefore scalable for coupling to novel devices for quantum photonic systems.

preprint2022arXiv

The quantum dynamic range of room temperature spin imaging

Magnetic resonance imaging of spin systems combines scientific applications in medicine, chemistry and physics. Here, we investigate the pixel-wise coherent quantum dynamics of spins consisting of a 40 by 40 micron sized region of interest implanted with nitrogen vacancy centers (NV) coupled to a nano-magnetic flake of $\mathrm{CrTe_2}$. $\mathrm{CrTe_2}$ is an in-plane van der Waals ferromagnet, which we can probe quantitatively by the NV electron&#39;s spin signal even at room temperature. First, we combine the nano-scale sample shapes measured by atomic force microscope with the magnetic resonance imaging data. We then map out the coherent dynamics of the colour centers coupled to the van der Waals ferromagnet using pixel-wise coherent Rabi and Ramsey imaging of the NV sensor layer. Next, we fit the pixel-wise solution of the Hamiltonian to the quantum sensor data. Combining data and model, we can explore the detuning range of the spin oscillation with a quantum dynamic range of over $\left|Δ_{max}\right|= 60 { }\mathrm{MHz} $ in the Ramsey interferometry mode. Finally, we show the effect of the $\mathrm{CrTe_2}$ van der Waals magnet on the coherence of the NV sensor layer and measure a 70 times increase in the maximum frequency of the quantum oscillation going from the Rabi to the Ramsey imaging mode.

preprint2022arXiv

Tuning the Optical Properties of an MoSe$_2$ Monolayer Using Nanoscale Plasmonic Antennas

Nanoplasmonic systems combined with optically-active two-dimensional materials provide intriguing opportunities to explore and control light-matter interactions at extreme sub-wavelength lengthscales approaching the exciton Bohr radius. Here, we present room- and cryogenic-temperature investigations of light-matter interactions between an MoSe$_2$ monolayer and individual lithographically defined gold dipole nanoantennas having sub-10 nm feed gaps. By progressively tuning the nanoantenna size, their dipolar resonance is tuned relative to the A-exciton transition in a proximal MoSe$_2$ monolayer achieving a total tuning of $\sim 130\;\mathrm{meV}$. Differential reflectance measurements performed on $> 100$ structures reveal an apparent avoided crossing between exciton and dipolar mode and an exciton-plasmon coupling constant of $g= 55\;\mathrm{meV}$, representing $g/(\hbarω_X)\geq3\%$ of the transition energy. This places our hybrid system in the intermediate-coupling regime where spectra exhibit a characteristic Fano-like shape, indicative of the interplay between pronounced light-matter coupling and significant damping. We also demonstrate active control of the optical response by varying the polarization of the excitation light to programmably suppress coupling to the dipole mode. We further study the emerging optical signatures of the monolayer localized at dipole nanoantennas at $10\;\mathrm{K}$. Our findings represent a key step towards realizing non-linear photonic devices based on 2D materials with potential for low-energy and ultrafast performance.

preprint2022arXiv

Two-Photon Interference of Single Photons from Dissimilar Sources

Entanglement swapping and heralding are at the heart of many protocols for distributed quantum information. For photons, this typically involves Bell state measurements based on two-photon interference effects. In this context, hybrid systems that combine high rate, ultra-stable and pure quantum sources with long-lived quantum memories are particularly interesting. Here, we develop a theoretical description of pulsed two-photon interference of photons from dissimilar sources to predict the outcomes of second-order cross-correlation measurements. These are directly related to, and hence used to quantify, photon indistinguishability. We study their dependence on critical system parameters such as quantum state lifetime and frequency detuning, and quantify the impact of emission time jitter, pure dephasing and spectral wandering. Our results show that for fixed lifetime of emitter one, for each frequency detuning there is an optimal lifetime of emitter two that leads to highest photon indistinguishability. Expectations for different hybrid combinations involving III-V quantum dots, color centers in diamond, 2D materials and atoms are quantitatively compared for real-world system parameters. Our work both provides a theoretical basis for the treatment of dissimilar emitters and enables assessment of which imperfections can be tolerated in hybrid photonic quantum networks.

preprint2021arXiv

Electrical control of orbital and vibrational interlayer coupling in bi- and trilayer 2H-MoS$_2$

Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with ab-initio calculations. Through polarization resolved photoluminescence spectroscopy in the same device, we observe a strongly tunable valley dichroism with maximum circular polarization degree of $\sim 60\%$ in bilayer and $\sim 35\%$ in trilayer MoS$_2$ that are fully consistent with a rate equation model which includes input from electronic band structure calculations. We identify the highly delocalized electron wave function between the layers close to the high symmetry $Q$ points as the origin of the tunable circular dichroism. Our results demonstrate the possibility of electric field tunable interlayer coupling for controlling emergent spin-valley physics and hybridization driven effects in vdW materials and their heterostructures.

preprint2021arXiv

High-resolution spectroscopy of a quantum dot driven bichromatically by two strong coherent fields

We present spectroscopic experiments and theory of a quantum dot driven bichromatically by two strong coherent lasers. In particular, we explore the regime where the drive strengths are substantial enough to merit a general non-perturbative analysis, resulting in a rich higher-order Floquet dressed-state energy structure. We show high resolution spectroscopy measurements with a variety of laser detunings performed on a single InGaAs quantum dot, with the resulting features well explained with a time-dependent quantum master equation and Floquet analysis. Notably, driving the quantum dot resonance and one of the subsequent Mollow triplet sidepeaks, we observe the disappearance and subsequent reappearance of the central transition and transition resonant with detuned-laser at high detuned-laser pump strengths and additional higher-order effects, e.g. emission triplets at higher harmonics and signatures of higher order Floquet states. For a similar excitation condition but with an off-resonant primary laser, we observe similar spectral features but with an enhanced inherent spectral asymmetry.

preprint2021arXiv

Raman spectrum of Janus transition metal dichalcogenide monolayers WSSe and MoSSe

Janus transition metal dichalcogenides (TMDs) lose the horizontal mirror symmetry of ordinary TMDs, leading to the emergence of additional features, such as native piezoelectricity, Rashba effect, and enhanced catalytic activity. While Raman spectroscopy is an essential nondestructive, phase- and composition-sensitive tool to monitor the synthesis of materials, a comprehensive study of the Raman spectrum of Janus monolayers is still missing. Here, we discuss the Raman spectra of WSSe and MoSSe measured at room and cryogenic temperatures, near and off resonance. By combining polarization-resolved Raman data with calculations of the phonon dispersion and using symmetry considerations, we identify the four first-order Raman modes and higher-order two-phonon modes. Moreover, we observe defect-activated phonon processes, which provide a route toward a quantitative assessment of the defect concentration and, thus, the crystal quality of the materials synthesized. Our work establishes a solid background for future research on material synthesis, study, and application of Janus TMD monolayers.

preprint2021arXiv

Resonance fluorescence spectral dynamics of an acoustically modulated quantum dot

Quantum technologies that rely on photonic qubits require a precise controllability of their properties. For this purpose hybrid approaches are particularly attractive because they offer a large flexibility to address different aspects of the photonic degrees of freedom. When combining photonics with other quantum platforms like phonons, quantum transducers have to be realized that convert between the mechanical and optical domain. Here, we realize this interface between phonons in the form of surface acoustic waves (SAWs) and single photons, mediated by a single semiconductor quantum dot exciton. In this combined theoretical and experimental study, we show that the different sidebands exhibit characteristic blinking dynamics that can be controlled by detuning the laser from the exciton transition. By developing analytical approximations we gain a better understanding of the involved internal dynamics. Our specific SAW approach allows us to reach the ideal frequency range of around 1 GHz that enables simultaneous temporal and spectral phonon sideband resolution close to the combined fundamental time-bandwidth limit.

preprint2021arXiv

Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials

We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile interfacial charge transport. This structure, which comprises an evaporated nanocrystalline carbon (nc-C) film beneath an atomic layer deposited alumina (ALD AlOx) layer, is thermally stable and allows direct chemical vapor deposition (CVD) of 2D materials onto the surface. When the nc-C/AlOx is deposited onto a 270 nm SiO2 layer on Si, strong optical contrast for monolayer flakes is retained. Raman spectroscopy reveals good crystal quality for MoS2 and we observe a ten-fold photoluminescence intensity enhancement compared to flakes on conventional Si/SiO2. Tunneling across the ultrathin AlOx enables interfacial charge injection, which we demonstrate by artifact-free scanning electron microscopy and photoemission electron microscopy. Thus, this combination of scalable fabrication and electronic conductivity across a weakly interacting 2D/3D interface opens up new application and characterization opportunities for 2D materials.

preprint2021arXiv

Stimulated generation of indistinguishable single photons from a quantum ladder system

We propose a scheme for the generation of highly indistinguishable single photons using semiconductor quantum dots and demonstrate its performance and potential. The scheme is based on the resonant two-photon excitation of the biexciton followed by stimulation of the biexciton to selectively prepare an exciton. Quantum-optical simulations and experiments are in good agreement and show that the scheme provides significant advantages over previously demonstrated excitation methods. The two-photon excitation of the biexciton suppresses re-excitation and enables ultra-low multi-photon errors, while the precisely timed stimulation pulse results in very low timing jitter of the photons, and consequently, high indistinguishability. Since both control laser fields are detuned from the emission energy, the scheme does not require polarization filtering, facilitating high brightness approaching unity. Moreover, the polarization of the emitted single photons is controlled by the stimulation laser field, such that the polarization of the quantum light is deterministically programmable.

preprint2021arXiv

Trions in MoS$_2$ are quantum superpositions of intra- and intervalley spin states

We report magneto-photoluminescence spectroscopy of gated MoS$_2$ monolayers in high magnetic fields to 28 T. At B = 0T and electron density $n_s\sim 10^{12}cm^-2$, we observe three trion resonances that cannot be explained within a single-particle picture. Employing ab initio calculations that take into account three-particle correlation effects as well as local and non-local electron-hole exchange interaction, we identify those features as quantum superpositions of inter- and intravalley spin states. We experimentally investigate the mixed character of the trion wave function via the filling factor dependent valley Zeeman shift in positive and negative magnetic fields. Our results highlight the importance of exchange interactions for exciton physics in monolayer MoS$_2$ and provide new insights into the microscopic understanding of trion physics in 2D multi-valley semiconductors for low excess carrier densities.

preprint2020arXiv

Charged exciton kinetics in monolayer MoSe$_2$ near ferroelectric domain walls in periodically poled LiNbO$_3$

Monolayers of semiconducting transition metal dichalcogenides are a strongly emergent platform for exploring quantum phenomena in condensed matter, building novel opto-electronic devices with enhanced functionalities. Due to their atomic thickness, their excitonic optical response is highly sensitive to their dielectric environment. In this work, we explore the optical properties of monolayer thick MoSe$_2$ straddling domain wall boundaries in periodically poled LiNbO$_3$. Spatially-resolved photoluminescence experiments reveal spatial sorting of charge and photo-generated neutral and charged excitons across the boundary. Our results reveal evidence for extremely large in-plane electric fields of 3000\,kV/cm at the domain wall whose effect is manifested in exciton dissociation and routing of free charges and trions toward oppositely poled domains and a non-intuitive spatial intensity dependence. By modeling our result using drift-diffusion and continuity equations, we obtain excellent qualitative agreement with our observations and have explained the observed spatial luminescence modulation using realistic material parameters.

preprint2020arXiv

Condensation signatures of photogenerated interlayer excitons in a van der Waals heterostack

Atomistic van der Waals heterostacks are ideal systems for high-temperature exciton condensation because of large exciton binding energies and long lifetimes. Charge transport and electron energy-loss spectroscopy showed first evidence of excitonic many-body states in such two-dimensional materials. Pure optical studies, the most obvious way to access the phase diagram of photogenerated excitons have been elusive. We observe several criticalities in photogenerated exciton ensembles hosted in MoSe2-WSe2 heterostacks with respect to photoluminescence intensity, linewidth, and temporal coherence pointing towards the transition to a coherent quantum state. For this state, the occupation is 100 percent and the exciton diffusion length is increased. The phenomena survive above 10 kelvin, consistent with the predicted critical condensation temperature. Our study provides a first phase-diagram of many-body interlayer exciton states including Bose Einstein condensation.

preprint2020arXiv

Discrete Interactions between a few Interlayer Excitons Trapped at a MoSe$_2$-WSe$_2$ Heterointerface

Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation effects. In order to acquire a detailed understanding of the possible many-body effects, the fundamental interactions between individual IXs have to be studied. Here, we trap a tunable number of dipolar within a nanoscale confinement potential induced by placing a MoSe$_2$-WSe$_2$ hetero-bilayer (HBL) onto an array of SiO$_2$ nanopillars. We control the mean occupation of the IX trap via the optical excitation level and observe discrete sharp-line emission from different configurations of interacting IXs. We identify these features as different multiparticle states with $N_{IX}\sim1-5$ via their power dependencies and directly measure the hierarchy of dipolar and exchange interactions as $N_{IX}$ increases. The interlayer biexciton ($N_{IX}=2$) is found to be an emission doublet that is blue-shifted from the single exciton by $ΔE=(8.4\pm0.6)$ meV and split by $2J=(1.2\pm0.5)$ meV. The blueshift is even more pronounced for triexcitons ($(12.4\pm0.4)$ meV), quadexcitons ($(15.5\pm0.6)$ meV) and quintexcitons ($(18.2\pm0.8)$ meV). These values are shown to be mutually consistent with numerical modelling of dipolar excitons confined to a harmonic trapping potential having a confinement lengthscale in the range $\ell\approx 3$ nm. Our results contribute to the understanding of interactions between IXs in TMD HBLs at the discrete limit of only a few excitations and represent a key step towards exploring quantum correlations between them.

preprint2020arXiv

Nonlinear quantum dot optomechanics

Wave mixing is an archetypical phenomenon in bosonic systems. In optomechanics, the bi-directional conversion between electromagnetic waves or photons at optical frequencies and elastic waves or phonons at radio frequencies is building on precisely this fundamental principle. Surface acoustic waves provide a versatile interconnect on a chip and, thus, enable the optomechanical control of remote systems. Here, we report on the coherent nonlinear three-wave mixing between the coherent fields of two radio frequency surface acoustic waves and optical laser photons via the dipole transition of a single quantum dot exciton. In the resolved sideband regime, we demonstrate fundamental acoustic analogues of sum and difference frequency generation between the two SAWs and employ phase matching to deterministically enhance or suppress individual sidebands. This bi-directional transfer between the acoustic and optical domains is described by theory which fully takes into account direct and virtual multi-phonon processes. Finally, we show that the precision of the wave mixing is limited by the frequency accuracy of modern radio frequency electronics.

preprint2020arXiv

Scalable single-photon sources in atomically thin MoS2

Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

preprint2020arXiv

Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters below 20 nm. The first approach exploits direct vapor-solid growth to tune the NW diameter by interwire spacing, mask opening size and growth time. The second scheme explores a unique reverse-reaction growth by which the sidewalls of InAs NWs are thermally decomposed under controlled arsenic flux and annealing time. Interesting kinetically limited dependencies between interwire spacing and thinning dynamics are found, yielding diameters as low as 12 nm for sparse NW arrays. We clearly verify the 1D sub-band structure in ultrathin NWs by pronounced conductance steps in low-temperature transport measurements using back-gated NW-field effect transistors. Correlated simulations reveal single- and double degenerate conductance steps, which highlight the rotational hexagonal symmetry and reproduce the experimental traces in the diffusive 1D transport limit. Modelling under the realistic back-gate configuration further evidences regimes that lead to asymmetric carrier distribution and lifts of the degeneracy in dependence of gate bias.

preprint2019arXiv

Atomistic defect states as quantum emitters in monolayer MoS$_2$

Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems.