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Max Bichler

Max Bichler appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.opticsquant-phcond-mat.mtrl-scicond-mat.othercond-mat.str-elcond-mat.supr-con

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Published work

13 published item(s)

preprint2014arXiv

Directional and dynamic modulation of the optical emission of an individual GaAs nanowire using surface acoustic waves

We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for the surface acoustic wave propagation aligned with the axis of the nanowire. Furthermore, we demonstrate that this quenching is dynamical as it shows a pronounced modulation as the local phase of the surface acoustic wave is tuned. These effects are strongly reduced for a SAW applied in the direction perpendicular to the axis of the nanowire due to their inherent one-dimensional geometry. We resolve a fully dynamic modulation of the nanowire emission up to 678 MHz not limited by the physical properties of the nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires

We probe and control the optical properties of emission centers forming in radial het- erostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy and occupancy state on a nanosec- ond timescale. In the spectral oscillations we identify unambiguous signatures arising from both the mechanical and electrical component of the surface acoustic wave. In addition, differ- ent emission lines of a single quantum dot exhibit pronounced anti-correlated intensity oscilla- tions during the acoustic cycle. These arise from a dynamically triggered carrier extraction out of the quantum dot to a continuum in the radial heterostructure. Using finite element modeling and Wentzel-Kramers-Brillouin theory we identify quantum tunneling as the underlying mech- anism. These simulation results quantitatively reproduce the observed switching and show that in our systems these quantum dots are spatially separated from the continuum by > 10.5 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Highly directed emission from self-assembled quantum dots into guided modes in disordered photonic crystal waveguides

We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into TE-polarised guided modes in GaAs two-dimensional photonic crystal waveguides. The local group velocity of the guided waveguide mode is probed, with values as low as $\sim 1.5\%\times c$ measured close to the slow-light band edge. By performing complementary continuous wave and time-resolved measurements with detection along, and perpendicular to the waveguide axis we probe the fraction of emission into the waveguide mode ($β$-factor). For dots randomly positioned within the unit cell of the photonic crystal waveguide our results show that the emission rate varies from $\geq 1.55$ $ns^{-1}$ close to the slow-light band edge to $\leq 0.25$ $ns^{-1}$ within the two-dimensional photonic bandgap. We measure an average Purcell-factor of $\sim 2\times$ for dots randomly distributed within the waveguide and maximum values of $β\sim 90 \%$ close to the slow light band edge. Spatially resolved measurements performed by exciting dots at a well controlled distance $0-45$ μm from the waveguide facet highlight the impact of disorder on the slow-light dispersion. Although disorder broadens the spectral width of the slow light region of the waveguide dispersion from $δE_{d}\leq 0.5$ meV to $>6$ meV, we find that emission is nevertheless primarily directed into propagating waveguide modes. The ability to control the rate and directionality of emission from isolated quantum emitters by placing them in a tailored photonic environment provides much promise for the use of slow-light phenomena to realise efficient single photon sources for quantum optics in a highly integrated setting.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to $\sim 10 nm$. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots $\sim 25 nm$ below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from $5 μm$ to $1 μm$, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length $L_i$ is varied. A splitting ratio of $50:50$ is observed for $L_i\sim 9\pm1 μm$ and $1 μm$ wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Radio frequency occupancy state control of a single nanowire quantum dot

The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs-AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Acoustically regulated carrier injection into a single optically active quantum dot

We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral $(X^0)$ and negatively charged $(X^-)$ excitons. We identify underlying, characteristic formation pathways of both few-particle states in the time-domain experiments and show that both exciton species can be formed either with the optical pump or at later times by injection of single electrons and holes "surfing" the acoustic wave. All experimental observations are in excellent agreement with calculated electron and hole trajectories in the plane of the two-dimensional wetting layer which is dynamically modulated by the acoustically induced piezoelectric potentials. Taken together, our findings provide insight on both the onset of acousto-electric transport of electrons and holes and their conversion into the optical domain after regulated injection into a single quantum dot emitter.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

On-chip time resolved detection of quantum dot emission using integrated superconducting single photon detectors

We report the routing of quantum light emitted by self-assembled InGaAs quantum dots (QDs) into the optical modes of a GaAs ridge waveguide and its efficient detection on-chip via evanescent coupling to NbN superconducting nanowire single photon detectors (SNSPDs). Individual QD light sources embedded within such integrated nano-photonic circuits are highly attractive for the realization of quantum photonic circuits for many applications in photonic information science. Here, we demonstrate that the waveguide coupled SNSPDs primarily detect QD luminescence with scattered photons from the excitation laser being negligible by comparison. The SNSPD detection efficiency from the evanescently coupled waveguide modes is shown to be two orders of magnitude higher when compared with operation under normal incidence illumination. Furthermore, in-situ time resolved measurements show an average exciton lifetime of 0.93 \pm 0.03 ns when recorded with the integrated detector with an ultrafast timing jitter of only 72 \pm 2 ps showing the great potential of this highly integrated quantum optics system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides

The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the waveguide mode, a ~21x enhancement of photoluminescence intensity is observed as compared to dots in the unprocessed region of the wafer. This enhancement can be traced back to the Purcell enhanced emission of quantum dots into leaky and guided modes of the waveguide with moderate Purcell factors up to ~4x. Emission into guided modes is shown to be efficiently scattered out of the waveguide within a few microns, contributing to the out-of-plane emission and allowing the use of photonic crystal waveguides as broadband, efficiency-enhancing structures for surface-emitting diodes or single photon sources.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Coupling of guided Surface Plasmon Polaritons to proximal self-assembled InGaAs Quantum Dots

We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containing near surface quantum dots clearly show that the propagating plasmon mode excites the dot, providing a new method to spatially image the surface plasmon mode. We use low temperature confocal microscopy with polarization control in the excitation and detection channel. After excitation, plasmons propagate along the waveguide and are scattered into the far field at the end. By comparing length and width evolution of the waveguide losses we determine the plasmon propagation length to be 27.5 {\pm} 1.5 μm at 830 nm (for a width of 5 μm), reducing to 13.4 {\pm} 1.7 μm for a width of 2 μm. For active structures containing low density InGaAs quantum dots at a precisely controlled distance 7-120 nm from the Au-GaAs interface, we probed the mutual coupling between the quantum dot and plasmon mode. These investigations reveal a unidirectional energy transfer from the propagating surface plasmon to the quantum dot. The exquisite control of the position and shape afforded by lithography combined with near surface QDs promises efficient on-chip generation and guiding of single plasmons for future applications in nanoscale quantum optics operating below the diffraction limit.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dirac cone shift of a passivated topological Bi2Se3 interface state

Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the conduction band edge. A precipitous drop in the scattering rate with Fermi energy is observed that is interpreted as the surface state decoupling from bulk states and evidence of a shift of the Dirac point towards mid-gap. Near the Dirac point, potential fluctuations of 50 meV are deduced from an observed loss of differential optical spectral weight near the Dirac point. Potential fluctuations are reduced by a factor of two at higher surface Fermi levels in the vicinity of the conduction band edge inferred from the width of the scattering rate step. The passivated topological interface state attains a high mobility of 3500 cm2/Vsec near the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fluctuation induced luminescence sidebands in the emission spectra of resonantly driven quantum dots

We describe how complex fluctuations of the local environment of an optically active quantum dot can leave rich fingerprints in its emission spectrum. A new feature, termed "Fluctuation Induced Luminescence" (FIL), is observed to arise from extremely rare fluctuation events that have a dramatic impact on the response of the system-so called "black swan" events. A quantum dissipative master equation formalism is developed to describe this effect phenomenologically. Experiments performed on single quantum dots subject to electrical noise show excellent agreement with our theory, producing the characteristic FIL sidebands.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well

We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numer- ical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilites limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures

The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a tilted magnetic field both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of two coupled counter-propagating quantum Hall edges and an additional one-dimensional accumulation wire. A subsystems model is introduced, whereby the total hybrid dispersion and wavefunctions are explained in terms of the constituent QH edge- and accumulation wire-subsystem dispersions and wavefunctions. At low magnetic fields, orthonormal basis wavefunctions of the hybrid system can be accurately estimated by projecting out the lowest bound state of the accumulation wire from the edge state wavefunctions. At high magnetic fields, the coupling between the three subsystems increases as a function of the applied magnetic field, in contrast to coplanar barrier-junctions of QH systems, leading to large anticrossing gaps between the subsystem dispersions. These results are discussed in terms of previously reported experimental data on bent quantum Hall systems.

0 citations0 reviewsNo code linkedOpen access