Abstract

We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into TE-polarised guided modes in GaAs two-dimensional photonic crystal waveguides. The local group velocity of the guided waveguide mode is probed, with values as low as ∼1.5%×c\sim 1.5\%\times c measured close to the slow-light band edge. By performing complementary continuous wave and time-resolved measurements with detection along, and perpendicular to the waveguide axis we probe the fraction of emission into the waveguide mode (ββ-factor). For dots randomly positioned within the unit cell of the photonic crystal waveguide our results show that the emission rate varies from ≥1.55\geq 1.55 ns−1ns^{-1} close to the slow-light band edge to ≤0.25\leq 0.25 ns−1ns^{-1} within the two-dimensional photonic bandgap. We measure an average Purcell-factor of ∼2×\sim 2\times for dots randomly distributed within the waveguide and maximum values of β∼90%β\sim 90 \% close to the slow light band edge. Spatially resolved measurements performed by exciting dots at a well controlled distance 0−450-45 μm from the waveguide facet highlight the impact of disorder on the slow-light dispersion. Although disorder broadens the spectral width of the slow light region of the waveguide dispersion from δEd≤0.5δE_{d}\leq 0.5 meV to >6>6 meV, we find that emission is nevertheless primarily directed into propagating waveguide modes. The ability to control the rate and directionality of emission from isolated quantum emitters by placing them in a tailored photonic environment provides much promise for the use of slow-light phenomena to realise efficient single photon sources for quantum optics in a highly integrated setting.

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