BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Michael Foerster

Michael Foerster contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phcond-mat.str-el

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
8works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2022arXiv

Magnetic domain wall pinning in cobalt ferrite microstructures

A detailed correlative structural, magnetic and chemical analysis of non-stoichiometric cobalt ferrite micrometric crystals was performed by x-ray magnetic circular dichroism combined with photoemission microscopy, low energy electron microscopy, and atomic force microscopy. The vector magnetization at the nanoscale is obtained from magnetic images at different x-ray incidence angles and compared with micromagnetic simulations, revealing the presence of defects which pin the magnetic domain walls. A comparison of different types of defects and the domain walls location suggests that the main source of pinning in these microcrystals are linear structural defects induced in the spinel by the substrate steps underneath the islands.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Size effects in the Verwey transition of nanometer-thick micron-wide magnetite crystals

We have monitored the Verwey transition in micrometer-wide, nanometer-thick magnetite islands on epitaxial Ru films on Al2O3(0001) using Raman spectroscopy. The islands have been grown by high-temperature oxygen-assisted molecular beam epitaxy. Below 100 K and for thicknesses above 20 nm the Raman spectra correspond to those observed in bulk crystals and high quality thin films for the sub-Verwey magnetite structure. At room temperature the width of the cubic phase modes is similar to the best reported in bulk crystals, indicating a similar level of electron-phonon interaction. The evolution of the Raman spectra upon cooling suggests that for islands thicker than 20 nm, structural changes appear first at temperatures starting at 150 K and the Verwey transition itself takes place at around 115 K. However, islands thinner than 20 nm show a very different Raman spectra indicating that while a transition takes place, the charge order of the ultrathin islands differs markedly from their thicker counterparts

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Flexible antiferromagnetic FeRh tapes as memory elements

The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination

Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

In-plane magnetic domains and Néel-like domain walls in thin flakes of the room temperature CrTe$_2$ van der Waals ferromagnet

The recent discovery of magnetic van der Waals materials has triggered a wealth of investigations in materials science, and now offers genuinely new prospects for both fundamental and applied research. Although the catalogue of van der Waals ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective x-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domains walls in micron-sized flakes of the CrTe$_2$ van der Waals ferromagnet. Flux-closure magnetic patterns suggesting in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back down the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have Néel texture, are preferentially oriented along directions separated by 120 degrees, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few mT only, showing that the CrTe$_2$ compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Massively strained VO2 thin film growth on RuO2

Strain engineering vanadium dioxide thin films is one way to alter this material's characteristic first order transition from semiconductor to metal. In this study we extend the exploitable strain regime by utilizing the very large lattice mismatch of 8.78 % occurring in the VO$_2$/RuO$_2$ system along the c axis of the rutile structure. We have grown VO$_2$ thin films on single domain RuO$_2$ islands of two distinct surface orientations by atomic oxygen-supported reactive MBE. These films were examined by spatially resolved photoelectron and x-ray absorption spectroscopy, confirming the correct stoichiometry. Low energy electron diffraction then reveals the VO$_2$ films to grow indeed fully strained on RuO$_2$(110), exhibiting a previously unreported ($2\times2$) reconstruction. On TiO$_2$(110) substrates, we reproduce this reconstruction and attribute it to an oxygen-rich termination caused by the high oxygen chemical potential. On RuO$_2$(100) on the other hand, the films grow fully relaxed. Hence, the presented growth method allows for simultaneous access to a remarkable strain window ranging from bulk-like structures to massively strained regions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reversible and magnetically unassisted voltage-driven switching of magnetization in FeRh/PMN-PT

Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adjacent piezoelectric layer, the relative amount of antiferromagnetic and ferromagnetic regions can be tuned by an electric field applied to the piezoelectric material. Indeed, large variations in the saturation magnetization have been observed when straining FeRh films grown on suitable piezoelectric substrates. In view of its applications, the variations in the remanent magnetization rather than those of the saturation magnetization are the most relevant. Here, we show that in the absence of any bias external magnetic field, permanent and reversible magnetization changes as high as 34% can be induced by an electric field, which remain after this has been zeroed. Bulk and local magnetoelectric characterization reveals that the fundamental reason for the large magnetoelectric response observed at remanence is the expansion (rather than the nucleation) of ferromagnetic nanoregions.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Generation and imaging of magnetoacoustic waves over millimetre distances

Using hybrid piezoelectric/magnetic systems we have generated large amplitude magnetization waves mediated by magneto-elasticity with up to 25 degrees variation in the magnetization orientation. We present direct imaging and quantification of both standing and propagating acoustomagnetic waves with different wavelengths, over large distances up to several millimeters in a nickel thin film.

0 citations0 reviewsNo code linkedOpen access