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Josep Fontcuberta

Josep Fontcuberta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-ph

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Published work

19 published item(s)

preprint2021arXiv

Flexible antiferromagnetic FeRh tapes as memory elements

The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices

Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric monoclinic (m-HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarization switching and have detrimental effects on device performance. Here, it is shown that, by using suitable nanometric capping layers deposited on HZO film, a radical improvement of the operation window of the tunnel device can be achieved. Crystalline SrTiO3 and amorphous AlOx are explored as capping layers. It is observed that these layers conformally coat the HZO surface and allow to increase the yield and homogeneity of functioning ferroelectric junctions while strengthening endurance. Data show that the capping layers block ionic-like transport channels across grain boundaries. It is suggested that they act as oxygen suppliers to the oxygen-getters grain boundaries in HZO. In this scenario it could be envisaged that these and other oxides could also be explored and tested for fully compatible CMOS technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reversible and magnetically unassisted voltage-driven switching of magnetization in FeRh/PMN-PT

Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adjacent piezoelectric layer, the relative amount of antiferromagnetic and ferromagnetic regions can be tuned by an electric field applied to the piezoelectric material. Indeed, large variations in the saturation magnetization have been observed when straining FeRh films grown on suitable piezoelectric substrates. In view of its applications, the variations in the remanent magnetization rather than those of the saturation magnetization are the most relevant. Here, we show that in the absence of any bias external magnetic field, permanent and reversible magnetization changes as high as 34% can be induced by an electric field, which remain after this has been zeroed. Bulk and local magnetoelectric characterization reveals that the fundamental reason for the large magnetoelectric response observed at remanence is the expansion (rather than the nucleation) of ferromagnetic nanoregions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (1000-100000 %) electroresistance when both phases coexist.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant Optical Polarization Rotation Induced by Spin-Orbit Coupling in Polarons

We have uncovered a giant gyrotropic magneto-optical response for doped ferromagnetic manganite La2/3Ca1/3MnO3 around the near room-temperature paramagnetic-to-ferromagnetic transition. At odds with current wisdom, where this response is usually assumed to be fundamentally fixed by the electronic band structure, we point to the presence of small polarons as the driving force for this unexpected phenomenon. We explain the observed properties by the intricate interplay of mobility, Jahn-Teller effect and spin-orbit coupling of small polarons. As magnetic polarons are ubiquitously inherent to many strongly correlated systems, our results provide an original, general pathway towards the generation of gigantic gyrotropic responses that can be harnessed for nonreciprocal devices that exploit the polarization of light.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Simultaneous imaging of strain waves and induced magnetization dynamics at the nanometer scale

Changes in strain can be used to modify electronic and magnetic properties in crystal structures, to manipulate nanoparticles and cells, or to control chemical reactions. The magneto-elastic (ME) effect--the change of magnetic properties caused by the elastic deformation (strain) of a magnetic material--has been proposed as an alternative approach to magnetic fields for the low power control of magnetization states of nanoelements since it avoids charge currents, which entail ohmic losses. Multiferroic heterostructures \cite{Zheng2004} and nanocomposites have exploited this effect in search of electric control of magnetic states, mostly in the static regime. Quantitative studies combining strain and magnetization dynamics are needed for practical applications and so far, a high resolution technique for this has been lacking. Here, we have studied the effect of the dynamic strain accompanying a surface acoustic wave on magnetic nanostructures. We have simultaneously imaged the temporal evolution of both strain waves and magnetization dynamics of nanostructures at the picosecond timescale. The newly developed experimental technique, based on X-ray microscopy, is versatile and provides a pathway to the study of strain-induced effects at the nanoscale. Our results provide fundamental insight in the coupling between strain and magnetization in nanostructures at the picosecond timescale, having implications in the design of strain-controlled magnetostrictive nano-devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers

We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance indicates that the SMR contains a contribution that does not follow the bulk magnetization of CFO but it is a fingerprint of the complex magnetism at the surface of the CFO layer, thus signaling SMR as a tool for mapping surface magnetization. A systematic study of the SMR for different temperatures and CFO thicknesses gives us information impossible to obtain with any standard magnetometry technique. On one hand, surface magnetization behaves independently of the CFO thickness and does not saturate up to high fields, evidencing that the surface has its own anisotropy. On the other hand, characteristic zero-field magnetization steps are not present at the surface while they are relevant in the bulk, strongly suggesting that antiphase boundaries are the responsible of such intriguing features. In addition, a contribution from ordinary magnetoresistance of Pt is identified, which is only distinguishable due to the low resistivity of the $\textit{in-situ}$ grown Pt.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions

Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO3 (Pt/HD/BTO/LSMO) FTJs, having different thicknesses of the ferroelectric (2-3nm) and HD layers (1-2nm), grown on substrates imposing either tensile (SrTiO3) or compressive (LaAlO3) strains. Room-temperature electric characterization of the FTJs shows polarization-controlled ON/ OFF states. Clear evidences of field-induced M/I transition (difference between junction resistance in OFF and ON state is increased of more than one order of magnitude) are observed in junctions prepared on SrTiO3 but the HD layer is generally metallic on LaAlO3. Moreover, the M/I transition is only confined in an interfacial layer of the slave film thus entailing an overall reduction of TER. The orderly results reported here give some hints towards selection of HD materials and substrates for optimal FTJ responsiveness.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)

Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Instability and Surface Potential Modulation of Self-Patterned (001)SrTiO3 Surfaces

The (001)SrTiO3 crystal surface can be engineered to display a self-organized pattern of well-separated and nearly pure single-terminated SrO and TiO2 regions by high temperature annealing in oxidizing atmosphere. By using surface sensitive techniques we have obtained evidence of such surface chemical self-structuration in as-prepared crystals and unambiguously identified the local composition. The contact surface potential at regions initially consisting of majority single terminations (SrO and TiO2) is determined to be smaller for SrO than for TiO2, in agreement with theoretical predictions, although the measured difference below 100 meV is definitely smaller than theoretical predictions for ideally pure single-terminated SrO and TiO2 surfaces. These relative values are maintained if samples are annealed in UHV up to 200 degrees Celsius. Annealing in UHV at higher temperature (400 degrees Celsius) preserves the surface morphology of self-assembled TiO2 and SrO rich regions, although a non-negligible chemical intermixing is observed. The most dramatic consequence is that the surface potential is reversed. It thus follows that electronic and chemical properties of (001)SrTiO3, widely used in oxide thin films growth, can largely vary before growth starts in a manner strongly dependent on temperature and pressure conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Multiferroic RMnO3 thin films

Multiferroic materials have received an astonishing attention in the last decades due to expectations that potential coupling between distinct ferroic orders could inspire new applications and new device concepts. As a result, a new knowledge on coupling mechanisms and materials science has dramatically emerged. Multiferroic RMnO3 perovskites are central to this progress providing a suitable platform to tailor spin-spin and spin-lattice interactions. With views towards applications, development of thin films of multiferroic materials have also progressed enormously and nowadays thin film manganites are available with properties mimicking those of bulk compounds. Here we review achievements on the growth and characterization of magnetic and ferroelectric properties of hexagonal and orthorhombic RMnO3 epitaxial thin films, discuss some challenging issues and we suggest some guidelines for future research and developments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Polar domain walls trigger magnetoelectric coupling

Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging properties may develop. Here we show that electric tuning of ferroelastic domain walls in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neighboring magnetic layer (La1/2Sr1/2MnO3) epitaxially clamped on a SrTiO3 substrate. We show that by exploiting the resposiveness of DWs nanoregions to external stimuli, even in absence of any domain contribution, prominent and adjustable macroscopic reactions of neighboring layers can be obtained. We conclude that polar DWs, known to exist in other materials, can be used to trigger tunable responses and may lead to new ways for manipulation of interfacial emerging properties.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Selecting Steady and Transient Photocurrent Response in BaTiO3 Films

The ferroelectric polarization and short-circuit photocurrent in BaTiO3 thin films have been studied for different contact configurations that allow to measure the photoresponse and polarization under the presence of large or negligible imprint field. It is found that in all cases, the direction of the photocurrent is dictated by the depolarizing field and ultimately by the film polarization, with a negligible contribution of the imprint electric field. However, dramatic differences are found in their time-dependent photoresponse. Whereas in presence of imprint, steady photocurrents are observed under suitable illumination, transient photocurrents are generated in absence of imprint. It is argued that this distinct behavior is determined by the different Schottky barrier height at electrodes which thus offers a simple way to tune the film photoresponse. These findings could be exploited for electro-optic read-out and writing of ferroelectric memories.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Multiferroic Iron Oxide Thin Films at Room-Temperature

In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very challenging to integrate in devices. Here we report on the strategy to stabilize the metastable epsilon-Fe2O3 in thin film form, and we show that besides its already known ferrimagnetic nature, the films are also ferroelectric at 300 K with a remanent polarization of 1 microC/cm2. The film polarization shows long retention times and can be switched under small applied voltages. These characteristics make of epsilon-Fe2O3 the first single-ion transition-metal oxide which is ferro(ferri)magnetic and ferroelectric at room temperature. The simple composition of this new multiferroic oxide and the discovery of a robust path for its thin film growth may boost the exploitation of epsilon-Fe2O3 in novel devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects

We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pumping or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tailored surfaces of perovskite oxide substrates for conducted growth of thin films

Oxide electronics relies on the availability of epitaxial oxide thin films. The extreme flexibility of the chemical composition of ABO3 perovskites and the broad spectrum of properties they cover, inspire the creativity of scientists and place perovskites in the lead of functional materials for advanced technologies. Moreover, emerging properties are being discovered at interfaces between distinct perovskites that could not be anticipated on the basis of those of the adjacent epitaxial layers. All dreamed new prospects require the use of suitable substrates for epitaxial growth. Perovskite single crystals are the workhorses of this activity and understanding and controlling their surface properties have become critical. In this tutorial review we will chiefly focus on the impact of the morphology and composition of the surface of ABO3 perovskite substrates on the growth mechanisms and properties of thin films epitaxially grown on them. As SrTiO3 is the most popular substrate, we will mostly concentrate on describing the current understanding and achievements for it. Illustrative examples of other perovskite substrates (LaAlO3, LSAT and DyScO3) will be also included. We will show that distinct chemical terminations can exist on the surfaces used for growth and we will review methods employed either to select the most appropriate one for specific growth to allow, for instance, tailoring the ultimate outmost epilayer, or to induce self-ordering to engineer long-range nanoscale patterns of chemical terminations. We will demonstrate the capacity of this knowledge by the growth of low-dimensional organic and inorganic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces

In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral TiO2 surface of (001)SrTiO3 has been shown to sustain 2DEL. We show that this restriction can be surpassed: (110) and (111) surfaces of SrTiO3 interfaced with epitaxial LaAlO3 layers, above a critical thickness, display 2DEL transport with mobilities similar to those of (001)SrTiO3. Moreover we show that epitaxial interfaces are not a prerequisite: conducting (110) interfaces with amorphous LaAlO3 and other oxides can also be prepared. These findings open a new perspective both for materials research and for elucidating the ultimate microscopic mechanism of carrier doping.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Andreev reflection in ferrimagnetic CoFe2O4/SrRuO3 spin filters

We have performed point contact spectroscopy measurements on a sample constituted by a metallic ferromagnetic oxide (SrRuO_3) bottom electrode and a tunnel ferrimagnetic (CoFe_2O_4) barrier. Andreev reflection is observed across the tunnel barrier. From the comparison of Andreev reflection in SrRuO3 and across the CoFe_2O_4 barrier we infer that the ferrimagnetic barrier has a spin filter efficiency not larger than +13%. The observation of a moderate and positive spin filtering is discussed in the context of the microstructure of the barriers and symmetry-related spin filtering effects.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Effect of band-filling and structural distortions on the Curie temperature of Fe-Mo double perovkites

By means of high resolution neutron powder diffraction at low temperature we have characterized the structural details of $\rm La_{x}Sr_{2-x}FeMoO_6$ ($0\leq {\rm x}\leq 0.5$) and $\rm Ca_{x}Sr_{2-x}FeMoO_6$ ($0\leq {\rm x}\leq 0.6$) series of compounds. This study reveals a similar variation of the mean bond-angle \FeOMo in both series. In contrast, the mean bond-distance \FeMoO\ increases with La but not with Ca substitution. Both series also present a different evolution of the Curie temperature ($T_C$), which raises in the La series and slightly decreases in the Ca one. We thus conclude that the enhancement of $T_C$ in the La series is due to the electron filling of the conduction band and a concomitant rising of the density of states at the Fermi level.

0 citations0 reviewsNo code linkedOpen access