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Lucía Aballe

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4 publications

preprint2022arXiv

Magnetic domain wall pinning in cobalt ferrite microstructures

A detailed correlative structural, magnetic and chemical analysis of non-stoichiometric cobalt ferrite micrometric crystals was performed by x-ray magnetic circular dichroism combined with photoemission microscopy, low energy electron microscopy, and atomic force microscopy. The vector magnetization at the nanoscale is obtained from magnetic images at different x-ray incidence angles and compared with micromagnetic simulations, revealing the presence of defects which pin the magnetic domain walls. A comparison of different types of defects and the domain walls location suggests that the main source of pinning in these microcrystals are linear structural defects induced in the spinel by the substrate steps underneath the islands.

preprint2022arXiv

Size effects in the Verwey transition of nanometer-thick micron-wide magnetite crystals

We have monitored the Verwey transition in micrometer-wide, nanometer-thick magnetite islands on epitaxial Ru films on Al2O3(0001) using Raman spectroscopy. The islands have been grown by high-temperature oxygen-assisted molecular beam epitaxy. Below 100 K and for thicknesses above 20 nm the Raman spectra correspond to those observed in bulk crystals and high quality thin films for the sub-Verwey magnetite structure. At room temperature the width of the cubic phase modes is similar to the best reported in bulk crystals, indicating a similar level of electron-phonon interaction. The evolution of the Raman spectra upon cooling suggests that for islands thicker than 20 nm, structural changes appear first at temperatures starting at 150 K and the Verwey transition itself takes place at around 115 K. However, islands thinner than 20 nm show a very different Raman spectra indicating that while a transition takes place, the charge order of the ultrathin islands differs markedly from their thicker counterparts

preprint2016arXiv

Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy

We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor.

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