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Maximilian Prechtl

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2 publications

preprint2022arXiv

Stacking polymorphism in PtSe2_2 drastically affects its electromechanical properties

PtSe2_2 is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device.

preprint2022arXiv

Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 μμm. Multilayered platinum diselenide (PtSe2_2) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450°°C. We integrate PtSe2_2 based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μμs. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 μμm to 28 μμm indicates the suitability of PtSe2_2 for PDs far into the infrared wavelength range. Our PtSe2_2 PDs integrated by direct growth outperform PtSe2_2 PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe2_2 an attractive 2D material for optoelectronics and PICs.

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