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Maximilian Prechtl

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2 published item(s)

preprint2022arXiv

Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties

PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device.

preprint2022arXiv

Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μ$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 $μ$s. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 $μ$m to 28 $μ$m indicates the suitability of PtSe$_2$ for PDs far into the infrared wavelength range. Our PtSe$_2$ PDs integrated by direct growth outperform PtSe$_2$ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe$_2$ an attractive 2D material for optoelectronics and PICs.