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Agnieszka Kuc

Agnieszka Kuc contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Probing defects and spin-phonon coupling in CrSBr via resonant Raman scattering

Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, we correlate defects in mono- to multilayer CrSBr with their structural, vibrational and magnetic properties. We use resonant Raman scattering to reveal distinct vibrational defect signatures. In pristine CrSBr, we show that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. We show that environmental exposure causes drastic degradation in monolayers, with the formation of intralayer defects. Through deliberate ion irradiation, we tune the formation of defect modes, which we show are strongly polarized and resonantly enhanced, reflecting the quasi-1D electronic character of CrSBr. Strikingly, we observe pronounced signatures of spin-phonon coupling of the intrinsic phonon modes and the ion beam induced defect modes throughout the magnetic transition temperature. Overall, we demonstrate that CrSBr shows air stability above the monolayer threshold, and provide further insight into the quasi-1D physics present. Moreover, we demonstrate defect engineering of magnetic properties and show that resonant Raman spectroscopy can serve as a direct fingerprint of magnetic phases and defects in CrSBr.

preprint2022arXiv

Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties

PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device.

preprint2021arXiv

Electrical control of orbital and vibrational interlayer coupling in bi- and trilayer 2H-MoS$_2$

Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with ab-initio calculations. Through polarization resolved photoluminescence spectroscopy in the same device, we observe a strongly tunable valley dichroism with maximum circular polarization degree of $\sim 60\%$ in bilayer and $\sim 35\%$ in trilayer MoS$_2$ that are fully consistent with a rate equation model which includes input from electronic band structure calculations. We identify the highly delocalized electron wave function between the layers close to the high symmetry $Q$ points as the origin of the tunable circular dichroism. Our results demonstrate the possibility of electric field tunable interlayer coupling for controlling emergent spin-valley physics and hybridization driven effects in vdW materials and their heterostructures.