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Agnieszka Kuc

Agnieszka Kuc appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.comp-ph

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Published work

14 published item(s)

preprint2022arXiv

Probing defects and spin-phonon coupling in CrSBr via resonant Raman scattering

Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, we correlate defects in mono- to multilayer CrSBr with their structural, vibrational and magnetic properties. We use resonant Raman scattering to reveal distinct vibrational defect signatures. In pristine CrSBr, we show that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. We show that environmental exposure causes drastic degradation in monolayers, with the formation of intralayer defects. Through deliberate ion irradiation, we tune the formation of defect modes, which we show are strongly polarized and resonantly enhanced, reflecting the quasi-1D electronic character of CrSBr. Strikingly, we observe pronounced signatures of spin-phonon coupling of the intrinsic phonon modes and the ion beam induced defect modes throughout the magnetic transition temperature. Overall, we demonstrate that CrSBr shows air stability above the monolayer threshold, and provide further insight into the quasi-1D physics present. Moreover, we demonstrate defect engineering of magnetic properties and show that resonant Raman spectroscopy can serve as a direct fingerprint of magnetic phases and defects in CrSBr.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties

PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electrical control of orbital and vibrational interlayer coupling in bi- and trilayer 2H-MoS$_2$

Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with ab-initio calculations. Through polarization resolved photoluminescence spectroscopy in the same device, we observe a strongly tunable valley dichroism with maximum circular polarization degree of $\sim 60\%$ in bilayer and $\sim 35\%$ in trilayer MoS$_2$ that are fully consistent with a rate equation model which includes input from electronic band structure calculations. We identify the highly delocalized electron wave function between the layers close to the high symmetry $Q$ points as the origin of the tunable circular dichroism. Our results demonstrate the possibility of electric field tunable interlayer coupling for controlling emergent spin-valley physics and hybridization driven effects in vdW materials and their heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by -27 +- 2 meV per percent of strain. This is in agreement with our density-functional theory calculations, which estimate a modulation of -32 meV per percent of strain, taking into account the role of deformation of the underlying substrate upon bending. Finally, due to its narrow PL spectra as compared with that of MoS2, we show that MoSe2 provides a more precise determination of small changes in strain making it the ideal 2D material for strain applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Stabilization Mechanism of ZnO nanoparticles by Fe doping

Surprisingly low solubility and toxicity of Fe-doped ZnO nanoparticles is elucidated on the basis of first-principles calculations. Various ZnO surfaces that could be present in nanoparticles are subject to substitutional Fe doping. We show that Fe stabilizes polar instable surfaces, while non-polar surfaces, namely (1010) and (1120), remain intact. Polar surfaces can be stabilized indirectly through Fe2+-Fe3+ pair assisted charge transfer, what reduces surface polarity and therefore, the solubility in polar solvents.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Transition-metal dichalcogenide bilayers: switching materials for spin- and valleytronic applications

We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides TX2, M = Mo, W, X = S, Se, creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field strength. Contrary to the TX2 monolayers, spin-orbit splittings and valley polarization are absent in bilayers due to the presence of inversion symmetry. This symmetry can be broken by an electric field, and the spin-orbit splittings in the valence band quickly reach similar values as in the monolayers (145 meV for MoS2... 418 meV for WSe2) at saturation fields less than 500 mV A-1. The band gap closure results in a semiconductor-metal transition at field strength between 1.25 (WX2) and 1.50 (MoX2) V A-1. Thus, by using a gate voltage, the spin polarization can be switched on and off in TX2 bilayers, thus activating them for spintronic and valleytronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Efficient Estimation of Band Gaps in Transition-Metal Oxides and Chalcogenides using Density Functional Theory

The performance of two modern density-functionals, HSE06 and TB-mBJ, on predicting electronic structures of metal oxides, chalcogenides and nitrides, is studied in terms of band gaps, band structure and projected density-of-states. Contrary to GGA, hybrid functionals and GGA+U, both new functionals are able to predict band gaps with an appreciable accuracy of 25% and thus allow the screening of various classes of (mixed) metal oxides at modest computational cost. The calculated electronic structures are largely unaffected by the choice of basis functions and software implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electromechanics in MoS2 and WS2: nanotubes vs. monolayers

The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing strain through mechanical contacts is difficult for TMD monolayers, but state-of-the-art for TMD nanotubes. We show using density-functional theory that similar electromechanical properties as in monolayer and bulk TMDs are found for large diameter TMD single- (SWNT) and multi-walled nanotubes (MWNTs). The semiconductor-metal transition occurs at elongations of 16 %. We show that Raman spectroscopy is an excellent tool to determine the strain of the nanotubes and hence monitor the progress of that nanoelectromechanical experiment in situ. TMD MWNTs show twice the electric conductance compared to SWNTs, and each wall of the MWNTs contributes to the conductance proportional to its diameter.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

From Layers to Nanotubes: Transition Metal Disulfides TMS2

MoS2 and WS2 layered transition-metal dichalcogenides are indirect band gap semiconductors in their bulk forms. Thinned to a monolayer, they undergo a transition and become direct band gap materials. Layered structures of that kind can be folded to form nanotubes. We present here the electronic structure comparison between bulk, monolayered and tubular forms of transition metal disulfides using first-principle calculations. Our results show that armchair nanotubes remain indirect gap semiconductors, similar to the bulk system, while the zigzag nanotubes, like a monolayer, are direct gap materials, what suggests interesting potential applications in optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene nanoflakes - structural and electronic properties

The structures, cohesive energies and HOMO-LUMO gaps of graphene nanoflakes and corresponding polycyclic aromatic hydrocarbons for a large variety of size and topology are investigated at the density functional based tight-binding level. Polyacene-like and honeycomb-like graphene nanoflakes were chosen as the topological limit structures. The influence of unsaturated edge atoms and dangling bonds on the stability is discussed. Our survey shows a linear trend for the cohesive energy as function of Ns/N (N - total number of atoms and Ns is number of edge atoms). For the HOMO-LUMO gap the trends are more complex and include also the topology of the edges.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Strain-dependent modulation of conductivity in single layer transition-metal dichalcogenides

Quantum conductance calculations on the mechanically deformed monolayers of MoS$_2$ and WS$_2$ were performed using the non-equlibrium Green's functions method combined with the Landauer-Büttiker approach for ballistic transport together with the density-functional based tight binding (DFTB) method. Tensile strain and compression causes significant changes in the electronic structure of TMD single layers and eventually the transition semiconductor-metal occurs for elongations as large as ~11% for the 2D-isotropic deformations in the hexagonal structure. This transition enhances the electron transport in otherwise semiconducting materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The Stacking in Bulk and Bilayer Hexagonal Boron Nitride

The stacking orders in layered hexagonal boron nitride bulk and bilayers are studied using high-level ab initio theory (local second-order Moller-Plesset perturbation theory, LMP2). Our results show that both electrostatic and London dispersion interactions are responsible for interlayer distance and stacking order, with AA' being the most stable one. The minimum energy sliding path includes only the AA' high-symmetry stacking, and the energy barrier is 3.4 meV per atom for the bilayer. State-of-the-art Density-functionals with and without London dispersion correction fail to correctly describe the interlayer energies with the exception of PBEsol that agrees very well with our LMP2 results and experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hexagon Preserving Carbon Nanofoams

Carbon foams are hypothetical carbon allotropes that contain graphite-like (sp$^2$ carbon) segments, connected by sp$^3$ carbon atoms, resulting in porous structures. In this work the DFTB (Density Functional based Tight-Binding) method with periodic boundary conditions (PBC) was employed to study energetics, the stability and electronic properties of this unusual class of carbon systems. Concerning the most stable phases of carbon (graphite and diamond), foams show high structural stability at very low mass density. The electronic band structure and electronic DOS (density of states) of foams indicate a similar size dependence as carbon nanotubes. The calculated bulk moduli are in the range between that of graphite (5.5 GPa) and diamond (514 GPa). These structures may represent novel stable carbon modifications with sp$^2$+sp$^3$ hybridization.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

How does quantum confinement influence the electronic structure of transition metal sulfides TmS2

Bulk MoS2, a prototypical layered transition-metal dichalcogenide, is an indirect band gap semiconductor. Reducing its size to a monolayer, MoS2 undergoes a transition to the direct band semiconductor. We support this experimental observation by first principles calculations and show that quantum confinement in layered d-electron dichalcogenides results in tuning the electronic structure at the nanoscale. We further studied the properties of related TmS2 nanolayers (Tm = W, Nb, Re) and show that the isotopological WS2 exhibits similar electronic properties, while NbS2 and ReS2 remain metallic independent on size.

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