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Researcher profile

Mario Carpentieri

Mario Carpentieri contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nnDistributed, Parallel, and Cluster ComputingEmerging Technologies

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Published work

7 published item(s)

preprint2022arXiv

Antiferromagnetic parametric resonance driven by voltage-controlled magnetic anisotropy

Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Neel vector, and for detection of high-frequency dynamics. Our work leads to two key results: (i) VCMA parametric pumping experiences the so-called exchange enhancement of the coupling efficiency and, thus, is 1-2 orders of magnitude more efficient than microwave magnetic fields or spin-orbit-torques, and (ii) it also allows for zero-field parametric resonance, which cannot be achieved by other parametric pumping mechanisms in AFMs with out-of-plane easy axis. Therefore, we demonstrate that the VCMA parametric pumping is the most promising method for coherent excitation and manipulation of AFM order in perpendicular easy-axis AFMs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Computing with injection-locked spintronic diodes

Spintronic diodes (STDs) are emerging as a technology for the realization of high-performance microwave detectors. The key advantages of such devices are their high sensitivity, capability to work at low input power, and compactness. In this work, we show a possible use of STDs for neuromorphic computing expanding the realm of their functionalities to implement analog multiplication, which is a key operation in convolutional neural networks (CNN). In particular, we introduce the concept of degree of rectification (DOR) in injection-locked STDs. Micromagnetic simulations are used to design and identify the working range of the STDs for the implementation of the DOR. Previous experimental data confirm the applicability of the proposed solution, which is tested in image processing and in a CNN that recognizes handwritten digits.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Massively Parallel Probabilistic Computing with Sparse Ising Machines

Inspired by the developments in quantum computing, building domain-specific classical hardware to solve computationally hard problems has received increasing attention. Here, by introducing systematic sparsification techniques, we demonstrate a massively parallel architecture: the sparse Ising Machine (sIM). Exploiting sparsity, sIM achieves ideal parallelism: its key figure of merit - flips per second - scales linearly with the number of probabilistic bits (p-bit) in the system. This makes sIM up to 6 orders of magnitude faster than a CPU implementing standard Gibbs sampling. Compared to optimized implementations in TPUs and GPUs, sIM delivers 5-18x speedup in sampling. In benchmark problems such as integer factorization, sIM can reliably factor semiprimes up to 32-bits, far larger than previous attempts from D-Wave and other probabilistic solvers. Strikingly, sIM beats competition-winning SAT solvers (by 4-700x in runtime to reach 95% accuracy) in solving 3SAT problems. Even when sampling is made inexact using faster clocks, sIM can find the correct ground state with further speedup. The problem encoding and sparsification techniques we introduce can be applied to other Ising Machines (classical and quantum) and the architecture we present can be used for scaling the demonstrated 5,000-10,000 p-bits to 1,000,000 or more through analog CMOS or nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Reliability of Neural Networks Based on Spintronic Neurons

Spintronic technology is emerging as a direction for the hardware implementation of neurons and synapses of neuromorphic architectures. In particular, a single spintronic device can be used to implement the nonlinear activation function of neurons. Here, we propose how to implement spintronic neurons with a sigmoidal and ReLU-like activation functions. We then perform a numerical experiment showing the robustness of neural networks made by spintronic neurons all having different activation functions to emulate device-to-device variations in a possible hardware implementation of the network. Therefore, we consider a vanilla neural network implemented to recognize the categories of the Mixed National Institute of Standards and Technology database, and we show an average accuracy of 98.87 % in the test dataset which is very close to the 98.89% as obtained for the ideal case (all neurons have the same sigmoid activation function). Similar results are also obtained with neurons having a ReLU-like activation function.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spintronics-compatible approach to solving maximum satisfiability problems with probabilistic computing, invertible logic and parallel tempering

The search of hardware-compatible strategies for solving NP-hard combinatorial optimization problems (COPs) is an important challenge of today s computing research because of their wide range of applications in real world optimization problems. Here, we introduce an unconventional scalable approach to face maximum satisfiability problems (Max-SAT) which combines probabilistic computing with p-bits, parallel tempering, and the concept of invertible logic gates. We theoretically show the spintronic implementation of this approach based on a coupled set of Landau-Lifshitz-Gilbert equations, showing a potential path for energy efficient and very fast (p-bits exhibiting ns time scale switching) architecture for the solution of COPs. The algorithm is benchmarked with hard Max-SAT instances from the 2016 Max-SAT competition (e.g., HG-4SAT-V150-C1350-1.cnf which can be described with 2851 p-bits), including weighted Max-SAT and Max-Cut problems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature gradient-driven magnetic skyrmion motion

The static and dynamic properties of skyrmions have recently received increased attention due to the potential application of skyrmions as information carriers and for unconventional computing. While the current-driven dynamics has been explored deeply, both theoretically and experimentally, the theory of temperature gradient-induced dynamics - Skyrmion-Caloritronics - is still at its early stages of development. Here, we move the topic forward by identifying the role of entropic torques due to the temperature dependence of magnetic parameters. Our results show that, skyrmions move towards higher temperatures in single-layer ferromagnets with interfacial Dzyaloshinski-Moriya interactions, whereas, in multilayers, they move to lower temperatures. We analytically and numerically demonstrate that the opposite behaviors are due to different scaling relations of the material parameters as well as a non-negligible magnetostatic field gradient in multilayers. We also find a spatially dependent skyrmion Hall angle in multilayers hosting hybrid skyrmions due to variations of the thickness dependent chirality as the skyrmion moves along the temperature gradient.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction

Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results can be used for the design of multi-terminal heavy metal/antiferromagnet memory devices.

0 citations0 reviewsNo code linkedOpen access