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Riccardo Tomasello

Riccardo Tomasello contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Antiferromagnetic parametric resonance driven by voltage-controlled magnetic anisotropy

Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Neel vector, and for detection of high-frequency dynamics. Our work leads to two key results: (i) VCMA parametric pumping experiences the so-called exchange enhancement of the coupling efficiency and, thus, is 1-2 orders of magnitude more efficient than microwave magnetic fields or spin-orbit-torques, and (ii) it also allows for zero-field parametric resonance, which cannot be achieved by other parametric pumping mechanisms in AFMs with out-of-plane easy axis. Therefore, we demonstrate that the VCMA parametric pumping is the most promising method for coherent excitation and manipulation of AFM order in perpendicular easy-axis AFMs.

preprint2022arXiv

Reliability of Neural Networks Based on Spintronic Neurons

Spintronic technology is emerging as a direction for the hardware implementation of neurons and synapses of neuromorphic architectures. In particular, a single spintronic device can be used to implement the nonlinear activation function of neurons. Here, we propose how to implement spintronic neurons with a sigmoidal and ReLU-like activation functions. We then perform a numerical experiment showing the robustness of neural networks made by spintronic neurons all having different activation functions to emulate device-to-device variations in a possible hardware implementation of the network. Therefore, we consider a vanilla neural network implemented to recognize the categories of the Mixed National Institute of Standards and Technology database, and we show an average accuracy of 98.87 % in the test dataset which is very close to the 98.89% as obtained for the ideal case (all neurons have the same sigmoid activation function). Similar results are also obtained with neurons having a ReLU-like activation function.

preprint2022arXiv

Temperature gradient-driven magnetic skyrmion motion

The static and dynamic properties of skyrmions have recently received increased attention due to the potential application of skyrmions as information carriers and for unconventional computing. While the current-driven dynamics has been explored deeply, both theoretically and experimentally, the theory of temperature gradient-induced dynamics - Skyrmion-Caloritronics - is still at its early stages of development. Here, we move the topic forward by identifying the role of entropic torques due to the temperature dependence of magnetic parameters. Our results show that, skyrmions move towards higher temperatures in single-layer ferromagnets with interfacial Dzyaloshinski-Moriya interactions, whereas, in multilayers, they move to lower temperatures. We analytically and numerically demonstrate that the opposite behaviors are due to different scaling relations of the material parameters as well as a non-negligible magnetostatic field gradient in multilayers. We also find a spatially dependent skyrmion Hall angle in multilayers hosting hybrid skyrmions due to variations of the thickness dependent chirality as the skyrmion moves along the temperature gradient.

preprint2022arXiv

Tuning the coexistence regime of incomplete and tubular skyrmions in ferro/ferri/ferromagnetic trilayers

The development of skyrmionic devices requires a suitable tuning of material parameters in order to stabilize skyrmions and control their density. It has been demonstrated recently that different skyrmion types can be simultaneously stabilized at room temperature in heterostructures involving ferromagnets, ferrimagnets and heavy metals, offering a new platform of coding binary information in the type of skyrmion instead of the presence/absence of skyrmions. Here, we tune the energy landscape of the two skyrmion types in such heterostructures by engineering the geometrical and material parameters of the individual layers. We find that a fine adjustment of the ferromagnetic layer thickness and thus its magnetic anisotropy, allows the trilayer system to support either one of the skyrmion types or the coexistence of both and with varying densities.

preprint2021arXiv

Vortex propagation and phase transitions in a chiral antiferromagnetic nanostripe

We study a vortex in a nanostripe of an antiferromagnet with easy-plane anisotropy and interfacial Dzyloshinskii-Moriya interaction. The vortex has hybrid chirality being Néel close to its center and Bloch away from it. Propagating vortices can acquire velocities up to a maximum value that is lower than the spin wave velocity. When the vortex is forced to exceed the maximum velocity, phase transitions occur to a nonflat spiral, vortex chain, and flat spiral, successively. The vortex chain is a topological configuration stabilised in the stripe geometry. Theoretical arguments lead to the general result that the velocity of localized excitations in chiral magnets cannot reach the spin wave velocity.

preprint2020arXiv

Coexistence of distinct skyrmion phases observed in hybrid ferromagnetic/ferrimagnetic multilayers

Materials hosting magnetic skyrmions at room temperature could enable new computing architectures as well as compact and energetically efficient magnetic storage such as racetrack memories. In a racetrack device, information is coded by the presence/absence of magnetic skyrmions forming a chain that is moved through the device. The skyrmion Hall effect that would eventually lead to an annihilation of the skyrmions at the edges of the racetrack can be suppressed for example by anti-ferromagnetically-coupled skyrmions. However, avoiding modifications of the inter-skyrmion distances in the racetrack remains challenging. As a solution to this issue, a chain of bits could also be encoded by two different solitons such as a skyrmion and a chiral bobber. The major limitation of this approach is that it has solely been realized in B20-type single crystalline material systems that support skyrmions only at low temperatures, thus hindering the efficacy for future applications. Here we demonstrate that a hybrid ferro/ferri/ferromagnetic multilayer system can host two distinct skyrmion phases at room temperature. By matching quantitative magnetic force microscopy data with micromagnetic simulations, we reveal that the two phases represent tubular skyrmions and partial skyrmions (similar to skyrmion bobbers). Furthermore, the tubular skyrmion can be converted into a partial skyrmion. Such multilayer systems may thus serve as a platform for designing skyrmion memory applications using distinct types of skyrmions and potentially for storing information using the vertical dimension in a thin film device.

preprint2020arXiv

Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction

Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results can be used for the design of multi-terminal heavy metal/antiferromagnet memory devices.