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Anna Giordano

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Published work

9 published item(s)

preprint2022arXiv

Computing with injection-locked spintronic diodes

Spintronic diodes (STDs) are emerging as a technology for the realization of high-performance microwave detectors. The key advantages of such devices are their high sensitivity, capability to work at low input power, and compactness. In this work, we show a possible use of STDs for neuromorphic computing expanding the realm of their functionalities to implement analog multiplication, which is a key operation in convolutional neural networks (CNN). In particular, we introduce the concept of degree of rectification (DOR) in injection-locked STDs. Micromagnetic simulations are used to design and identify the working range of the STDs for the implementation of the DOR. Previous experimental data confirm the applicability of the proposed solution, which is tested in image processing and in a CNN that recognizes handwritten digits.

preprint2022arXiv

Reliability of Neural Networks Based on Spintronic Neurons

Spintronic technology is emerging as a direction for the hardware implementation of neurons and synapses of neuromorphic architectures. In particular, a single spintronic device can be used to implement the nonlinear activation function of neurons. Here, we propose how to implement spintronic neurons with a sigmoidal and ReLU-like activation functions. We then perform a numerical experiment showing the robustness of neural networks made by spintronic neurons all having different activation functions to emulate device-to-device variations in a possible hardware implementation of the network. Therefore, we consider a vanilla neural network implemented to recognize the categories of the Mixed National Institute of Standards and Technology database, and we show an average accuracy of 98.87 % in the test dataset which is very close to the 98.89% as obtained for the ideal case (all neurons have the same sigmoid activation function). Similar results are also obtained with neurons having a ReLU-like activation function.

preprint2022arXiv

Temperature gradient-driven magnetic skyrmion motion

The static and dynamic properties of skyrmions have recently received increased attention due to the potential application of skyrmions as information carriers and for unconventional computing. While the current-driven dynamics has been explored deeply, both theoretically and experimentally, the theory of temperature gradient-induced dynamics - Skyrmion-Caloritronics - is still at its early stages of development. Here, we move the topic forward by identifying the role of entropic torques due to the temperature dependence of magnetic parameters. Our results show that, skyrmions move towards higher temperatures in single-layer ferromagnets with interfacial Dzyaloshinski-Moriya interactions, whereas, in multilayers, they move to lower temperatures. We analytically and numerically demonstrate that the opposite behaviors are due to different scaling relations of the material parameters as well as a non-negligible magnetostatic field gradient in multilayers. We also find a spatially dependent skyrmion Hall angle in multilayers hosting hybrid skyrmions due to variations of the thickness dependent chirality as the skyrmion moves along the temperature gradient.

preprint2022arXiv

Tuning the coexistence regime of incomplete and tubular skyrmions in ferro/ferri/ferromagnetic trilayers

The development of skyrmionic devices requires a suitable tuning of material parameters in order to stabilize skyrmions and control their density. It has been demonstrated recently that different skyrmion types can be simultaneously stabilized at room temperature in heterostructures involving ferromagnets, ferrimagnets and heavy metals, offering a new platform of coding binary information in the type of skyrmion instead of the presence/absence of skyrmions. Here, we tune the energy landscape of the two skyrmion types in such heterostructures by engineering the geometrical and material parameters of the individual layers. We find that a fine adjustment of the ferromagnetic layer thickness and thus its magnetic anisotropy, allows the trilayer system to support either one of the skyrmion types or the coexistence of both and with varying densities.

preprint2020arXiv

Coexistence of distinct skyrmion phases observed in hybrid ferromagnetic/ferrimagnetic multilayers

Materials hosting magnetic skyrmions at room temperature could enable new computing architectures as well as compact and energetically efficient magnetic storage such as racetrack memories. In a racetrack device, information is coded by the presence/absence of magnetic skyrmions forming a chain that is moved through the device. The skyrmion Hall effect that would eventually lead to an annihilation of the skyrmions at the edges of the racetrack can be suppressed for example by anti-ferromagnetically-coupled skyrmions. However, avoiding modifications of the inter-skyrmion distances in the racetrack remains challenging. As a solution to this issue, a chain of bits could also be encoded by two different solitons such as a skyrmion and a chiral bobber. The major limitation of this approach is that it has solely been realized in B20-type single crystalline material systems that support skyrmions only at low temperatures, thus hindering the efficacy for future applications. Here we demonstrate that a hybrid ferro/ferri/ferromagnetic multilayer system can host two distinct skyrmion phases at room temperature. By matching quantitative magnetic force microscopy data with micromagnetic simulations, we reveal that the two phases represent tubular skyrmions and partial skyrmions (similar to skyrmion bobbers). Furthermore, the tubular skyrmion can be converted into a partial skyrmion. Such multilayer systems may thus serve as a platform for designing skyrmion memory applications using distinct types of skyrmions and potentially for storing information using the vertical dimension in a thin film device.

preprint2020arXiv

Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction

Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. From a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for particular applications. Here, we present a study focusing on antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results can be used for the design of multi-terminal heavy metal/antiferromagnet memory devices.

preprint2016arXiv

Nanomagnetic logic with non-uniform states of clocking

Nanomagnetic logic transmits information along a path of nanomagnets. The basic mechanism to drive such a transmission, known as clocking, can be achieved by exploiting the spin-Hall effect, as recently observed in experiments on Ta/CoFeB/MgO multilayers [D. Bhowmik, et al., Nat. Nano. 9, 59 (2013)]. This paper shows the fundamental mechanism of the spin-Hall driven clocking by using a full micromagnetic framework and considering two different devices, Ta/CoFeB/MgO and Pt/CoFeB/MgO. The former is used for a direct comparison of the numerical results with the experiments while the latter permits to predict the effect of the Dzyaloshinskii-Moriya interaction (DMI) in the clocking mechanism. Results show that the clocking state is non-uniform and it is characterized by the presence of domains separated by Bloch (Néel) domain walls depending on the absence (presence) of the DMI. Our findings point out that for the design of nanomagnetic logic a full micromagnetic approach is necessary.

preprint2016arXiv

Scalable synchronization of spin-Hall oscillators in out-of-plane field

A strategy for a scalable synchronization of an array of spin-Hall oscillators (SHOs) is illustrated. In detail, we present micromagnetic simulations of two and five SHOs realized by means of couples of triangular golden contacts on the top of a Pt/CoFeB/Ta trilayer. Results highlight that the synchronization occurs for the whole current region that gives rise to the excitation of self-oscillations. This is linked to the role of the magnetodipolar coupling, which is the phenomenon driving the synchronization when the distance between oscillators is not too large. Synchronization turns out to be also robust against geometrical differences of the contacts, simulated by considering variable distances between the tips ranging from 100nm to 200nm. Besides, it entails an enlargement of the radiation pattern that can be useful for the generation of spin-waves in magnonics applications. Simulations performed to study the effect of the interfacial Dzyaloshinskii-Moriya interaction show nonreciprocity in spatial propagation of the synchronized spin-wave. The simplicity of the geometry and the robustness of the achieved synchronization make this design of array of SHOs scalable for a larger number of synchronized oscillators.

preprint2014arXiv

Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.