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Researcher profile

M. V. Trushin

M. V. Trushin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
nucl-exphysics.ins-detcond-mat.mtrl-scihep-exhep-phnucl-th

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Published work

3 published item(s)

preprint2023arXiv

Investigation of radiation hardness of silicon semiconductor detectors under irradiation with fission products of 252Cf nuclide

Influence of the prolonged irradiation by fission products of 252Cf radionuclide on the operational parameters of silicon-lithium Si(Li) p-i-n detectors, Si surface barrier detectors and Si planar p+n detector was investigated. The obtained results revealed a linear shift of the fission fragment peaks positions towards the lower energies with increase of the irradiation dose for all investigated detectors. The rate of the peaks shift was found to depend strongly on the detector type and the strength of the electric field in the detectors active region, but not on the temperature of irradiation (room or liquid nitrogen temperature). Based on the obtained results, the possibility of integration of the investigated types of Si semiconductor detectors in a radionuclide neutron calibration source is considered.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 α-particles, an increase of α-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming α-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.

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preprint2021arXiv

Precision measurement of $^{\mathbf{210}}$Bi $β$-spectrum

The precision measurement of the $β-$spectrum shape for $^{210}$Bi (historically RaE) have been performed with a spectrometer based on semiconductor Si(Li) detector. This first forbidden non-unique transition has the transition form-factor strongly deviated from unity and knowledge of its spectrum would play an important role in low-background physics in presence of $^{210}$Pb background. The measured transition form-factor could be approximated as $S(W) = 1 + (-0.4363 \pm 0.0037) W + (0.0523 \pm 0.0010) W^2$, that is in good agreement with previous studies and has significantly increased parameter precision.

0 citations0 reviewsNo code linkedOpen access