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M. Ben Shalom

M. Ben Shalom contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2016arXiv

Macroscopic self-reorientation of interacting two-dimensional crystals

Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-controlled movements as a reaction to small changes of the external parameters. Here we demonstrate that, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals and elastic energies results in graphene mechanically self-rotating towards the hexagonal boron nitride crystallographic directions. Such rotation is macroscopic (for graphene flakes of tens of micrometres the tangential movement can be on hundreds of nanometres) and can be used for reproducible manufacturing of aligned van der Waals heterostructures.

preprint2016arXiv

Negative local resistance caused by viscous electron backflow in graphene

Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above liquid nitrogen temperature. Under these conditions, electrons can behave as a viscous liquid and exhibit hydrodynamic phenomena similar to classical liquids. Here we report strong evidence for this transport regime. We find that doped graphene exhibits an anomalous (negative) voltage drop near current injection contacts, which is attributed to the formation of submicrometer-size whirlpools in the electron flow. The viscosity of graphene's electron liquid is found to be ~0.1 m$^2$ /s, an order of magnitude larger than that of honey, in agreement with many-body theory. Our work shows a possibility to study electron hydrodynamics using high quality graphene.

preprint2015arXiv

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only in the normal-state resistance but also in the critical current. The proximity effect is mostly suppressed in magnetic fields below 10mT, showing the conventional Fraunhofer pattern. Unexpectedly, some proximity survives even in fields higher than 1 T. Superconducting states randomly appear and disappear as a function of field and carrier concentration, and each of them exhibits a supercurrent carrying capacity close to the universal quantum limit. We attribute the high-field Josephson effect to mesoscopic Andreev states that persist near graphene edges. Our work reveals new proximity regimes that can be controlled by quantum confinement and cyclotron motion.

preprint2015arXiv

Strong correlations elucidate the electronic structure and phase-diagram of LaAlO3/SrTiO3 interface

The interface between the two band insulators SrTiO3 and LaAlO3 unexpectedly has the properties of a two dimensional electron gas. It is even superconducting with a transition temperature, Tc, that can be tuned using gate bias Vg, which controls the number of electrons added or removed from the interface. The gate bias - temperature (Vg, T) phase diagram is characterized by a dome-shaped region where superconductivity occurs, i.e., Tc has a non-monotonic dependence on Vg, similar to many unconventional superconductors. In this communication the frequency of the quantum resistance-oscillations versus inverse magnetic field is reported for various Vg. This frequency follows the same nonmonotonic behavior as Tc; similar trend is seen in the low field limit of the Hall coefficient. We theoretically show that electronic correlations result in a non-monotonic population of the mobile band, which can account for the experimental behavior of the normal transport properties and the superconducting dome.

preprint2014arXiv

Phase Diagram of Micron-Size Bridges of SrTiO$_3/$LaAlO$_3$ Interface: Link Between Multiple Band Structure and Superconductivity

The rich phase diagram of the two dimensional electron gas (2DEG) at the \STO/\LAO interface is probed using Hall and longitudinal resistivity. Thanks to a special bridge design we are able to tune through the superconducting transition temperature T$_c$ and to mute superconductivity by either adding or removing carriers in a gate bias range of a few volts. Hall signal measurements pinpoint the onset of population of a second mobile band right at the carrier concentration where maximum superconducting T$_c$ and critical field H$_c$ occur. These results emphasize the advantages of our design, which can be applied to many other two dimensional systems assembled on top of a dielectric substrate with high permittivity.

preprint2012arXiv

Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures

Anisotropic magnetoresistance and negative magnetoresistance for in-plane fields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-doped SrTiO3 heterostructure. Both effects are exceptionally strong in LaAlO3 /SrTiO3 . We analyze their temperature, magnetic field and gate voltage dependencies and find them to arise from a Rashba type spin-orbit coupling with magnetic scatterers that have two contributions to their potential: spin exchange and Coulomb interaction. Atomic spin-orbit coupling is sufficient to explain the small effects observed in Nb-doped SrTiO3 . These results clarify contradicting transport interpretations in SrTiO3 -based heterostructures.

preprint2011arXiv

Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3

The magnetoresistance as a function of temperature and field for atomically flat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported. Anomalous anisotropic behavior of the magnetoresistance is observed below 30 K for superconducting samples with carrier concentration of 3.5\times10^13 cm^-2 . We associate this behavior to a magnetic order formed at the interface.

preprint2010arXiv

Phase coherent transport in SrTiO3/LaAlO3 interfaces

The two dimensional electron gas formed between the two band insulators SrTiO3 and LaAlO3 exhibits a variety of interesting physical properties which make it an appealing material for use in future spintronics and/or quantum computing devices. For this kind of applications electrons have to retain their phase memory for sufficiently long times or length. Using a mesoscopic size device we were able to extract the phase coherence length, and its temperature variation. We find the dephasing rate to have a power law dependence on temperature. The power depends on the temperature range studied and sheet resistance as expected from dephasing due to strong electron-electron interactions.

preprint2010arXiv

Shubnikov-de Haas oscillations in SrTiO3\LaAlO3 interface

Quantum magnetic oscillations in SrTiO3/\LaAlO3 interface are observed. The evolution of their frequency and amplitude at various gate voltages and temperatures is studied. The data are consistent with the Shubnikov de-Haas theory. The Hall resistivity rho exhibits nonlinearity at low magnetic field. It is fitted assuming multiple carrier contributions. The comparison between the mobile carrier density inferred from the Hall data and the oscillation frequency suggests multiple valley and spin degeneracy. The small amplitude of the oscillations is discussed in the framework of the multiple band scenario.

preprint2010arXiv

Tuning spin-orbit coupling and superconductivity at the SrTiO3/LaAlO3 interface: a magneto-transport study

The superconducting transition temperature, Tc, of the SrTiO3/LaAlO3 interface was varied by the electric field effect. The anisotropy of the upper critical field and the normal state magneto-transport were studied as a function of gate voltage. The spin-orbit coupling energy is extracted. This tunable energy scale is used to explain the strong gate dependence of the mobility and of the anomalous Hall signal observed. The spin-orbit coupling energy follows Tc for the electric field range under study.

preprint2009arXiv

Anisotropic magneto-transport effects at SrTiO3\LaAlO3 interfaces

The resistivity as a function of temperature, magnetic field and its orientation for atomically flat SrTiO3\LaAlO3 interfaces with carrier densities of ~3*10^13 cm^-2 is reported. At low magnetic fields superconductivity is observed below 130mK. The temperature dependence of the high field magnetoresistance and its strong anisotropy suggest possible magnetic ordering below 35K. The origin of this ordering and its possible relation to superconductivity are discussed.