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Researcher profile

A. Palevski

A. Palevski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

8 published item(s)

preprint2015arXiv

Suppression of Coulomb blockade peaks by electronic correlations in InAs nanowires

We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded between two one-dimensional Luttinger liquid wires. In contrast to previous experiments in other material systems, in our system the conductance difference between peak to valley decreases with decreasing temperature for several consecutive peaks. This phenomenon is theoretically expected to occur only for strongly interacting systems with small Luttinger interaction parameter g < 1/2; we find for our InAs wires a value of g~0.4. Possible mechanisms leading to these strong correlations are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phase Diagram of Micron-Size Bridges of SrTiO$_3/$LaAlO$_3$ Interface: Link Between Multiple Band Structure and Superconductivity

The rich phase diagram of the two dimensional electron gas (2DEG) at the \STO/\LAO interface is probed using Hall and longitudinal resistivity. Thanks to a special bridge design we are able to tune through the superconducting transition temperature T$_c$ and to mute superconductivity by either adding or removing carriers in a gate bias range of a few volts. Hall signal measurements pinpoint the onset of population of a second mobile band right at the carrier concentration where maximum superconducting T$_c$ and critical field H$_c$ occur. These results emphasize the advantages of our design, which can be applied to many other two dimensional systems assembled on top of a dielectric substrate with high permittivity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3

The magnetoresistance as a function of temperature and field for atomically flat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported. Anomalous anisotropic behavior of the magnetoresistance is observed below 30 K for superconducting samples with carrier concentration of 3.5\times10^13 cm^-2 . We associate this behavior to a magnetic order formed at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Phase coherent transport in SrTiO3/LaAlO3 interfaces

The two dimensional electron gas formed between the two band insulators SrTiO3 and LaAlO3 exhibits a variety of interesting physical properties which make it an appealing material for use in future spintronics and/or quantum computing devices. For this kind of applications electrons have to retain their phase memory for sufficiently long times or length. Using a mesoscopic size device we were able to extract the phase coherence length, and its temperature variation. We find the dephasing rate to have a power law dependence on temperature. The power depends on the temperature range studied and sheet resistance as expected from dephasing due to strong electron-electron interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Shubnikov-de Haas oscillations in SrTiO3\LaAlO3 interface

Quantum magnetic oscillations in SrTiO3/\LaAlO3 interface are observed. The evolution of their frequency and amplitude at various gate voltages and temperatures is studied. The data are consistent with the Shubnikov de-Haas theory. The Hall resistivity rho exhibits nonlinearity at low magnetic field. It is fitted assuming multiple carrier contributions. The comparison between the mobile carrier density inferred from the Hall data and the oscillation frequency suggests multiple valley and spin degeneracy. The small amplitude of the oscillations is discussed in the framework of the multiple band scenario.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tuning spin-orbit coupling and superconductivity at the SrTiO3/LaAlO3 interface: a magneto-transport study

The superconducting transition temperature, Tc, of the SrTiO3/LaAlO3 interface was varied by the electric field effect. The anisotropy of the upper critical field and the normal state magneto-transport were studied as a function of gate voltage. The spin-orbit coupling energy is extracted. This tunable energy scale is used to explain the strong gate dependence of the mobility and of the anomalous Hall signal observed. The spin-orbit coupling energy follows Tc for the electric field range under study.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Anisotropic magneto-transport effects at SrTiO3\LaAlO3 interfaces

The resistivity as a function of temperature, magnetic field and its orientation for atomically flat SrTiO3\LaAlO3 interfaces with carrier densities of ~3*10^13 cm^-2 is reported. At low magnetic fields superconductivity is observed below 130mK. The temperature dependence of the high field magnetoresistance and its strong anisotropy suggest possible magnetic ordering below 35K. The origin of this ordering and its possible relation to superconductivity are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Dephasing Time in a Two-Dimensional Electron Fermi Liquid

The observation of coherent quantum transport phenomena in metals and semiconductors is limited by the eventual loss of phase coherence of the conducting electrons. We use the weak localization effect to measure the low-temperature dephasing time in a two-dimensional electron Fermi liquid in GaAs/AlGaAs heterostructures. We use a novel temperature calibration method based on the integer quantum Hall effect in order to directly measure the electrons&#39; temperature. The data are in excellent agreement with recent theoretical results, including contributions from the triplet channel, for a broad temperature range. We see no evidence for saturation of the dephasing time down to around 100mK. Moreover, the zero-temperature dephasing time is extrapolated to be higher than 4ns.

0 citations0 reviewsNo code linkedOpen access