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The magnetoresistance as a function of temperature and field for atomically flat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported. Anomalous anisotropic behavior of the magnetoresistance is observed below 30 K for superconducting samples with carrier concentration of 3.5\times10^13 cm^-2 . We associate this behavior to a magnetic order formed at the interface.
The two dimensional electron gas formed between the two band insulators SrTiO3 and LaAlO3 exhibits a variety of interesting physical properties which make it an appealing material for use in future spintronics and/or quantum computing devices. For this kind of applications electrons have to retain their phase memory for sufficiently long times or length. Using a mesoscopic size device we were able to extract the phase coherence length, and its temperature variation. We find the dephasing rate to have a power law dependence on temperature. The power depends on the temperature range studied and sheet resistance as expected from dephasing due to strong electron-electron interactions.
The superconducting transition temperature, Tc, of the SrTiO3/LaAlO3 interface was varied by the electric field effect. The anisotropy of the upper critical field and the normal state magneto-transport were studied as a function of gate voltage. The spin-orbit coupling energy is extracted. This tunable energy scale is used to explain the strong gate dependence of the mobility and of the anomalous Hall signal observed. The spin-orbit coupling energy follows Tc for the electric field range under study.
The resistivity as a function of temperature, magnetic field and its orientation for atomically flat SrTiO3\LaAlO3 interfaces with carrier densities of ~3*10^13 cm^-2 is reported. At low magnetic fields superconductivity is observed below 130mK. The temperature dependence of the high field magnetoresistance and its strong anisotropy suggest possible magnetic ordering below 35K. The origin of this ordering and its possible relation to superconductivity are discussed.
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