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A. K. Geim

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.soft cond-mat.supr-con cond-mat.other physics.flu-dyn cond-mat.stat-mech gr-qc hep-th nucl-ex physics.app-ph physics.optics

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preprint2023arXiv

Long-term memory and synapse-like dynamics in two-dimensional nanofluidic channels

Fine-tuned ion transport across nanoscale pores is key to many biological processes such as neurotransmission. Recent advances have enabled the confinement of water and ions to two dimensions, unveiling transport properties unreachable at larger scales and triggering hopes to reproduce the ionic machinery of biological systems. Here we report experiments demonstrating the emergence of memory in the transport of aqueous electrolytes across (sub)nanoscale channels. We unveiled two types of nanofluidic memristors, depending on channel material and confinement, with memory from minutes to hours. We explained how large timescales could emerge from interfacial processes like ionic self-assembly or surface adsorption. Such behavior allowed us to implement Hebbian learning with nanofluidic systems. This result lays the ground for biomimetic computations on aqueous electrolytic chips.

preprint2022arXiv

Alternating superconducting and charge density wave monolayers within bulk 6R-TaS2

Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in naturally occurring materials. Unfortunately, this approach is currently limited to only a few layers that can be stacked on top of each other. Here we report a bulk material consisting of superconducting monolayers interlayered with monolayers displaying charge density waves (CDW). This bulk vdW heterostructure is created by phase transition of 1T-TaS2 to 6R at 800 °C in an inert atmosphere. Electron microscopy analysis directly shows the presence of alternating 1T and 1H monolayers within the resulting bulk 6R phase. Its superconducting transition (Tc) is found at 2.6 K, exceeding the Tc of the bulk 2H phase of TaS2. The superconducting temperature can be further increased to 3.6 K by exfoliating 6R-TaS2 and then restacking its layers. Using first-principles calculations, we argue that the coexistence of superconductivity and CDW within 6R-TaS2 stems from amalgamation of the properties of adjacent 1H and 1T monolayers, where the former dominates the superconducting state and the latter the CDW behavior.

preprint2022arXiv

Highly Efficient and Selective Extraction of Gold by Reduced Graphene Oxide

Materials that are capable of extracting gold from complex sources, especially electronic waste (e-waste) with high efficiency are needed for gold resource sustainability and effective e-waste recycling. However, it remains challenging to achieve high extraction capacity to trace amount of gold, and precise selectivity to gold over a wide range of complex co-existing elements. Here we report a reduced graphene oxide (rGO) material that has an ultrahigh extraction capacity for trace amounts of gold (1,850 mg/g and 1,180 mg/g to 10 ppm and 1 ppm gold). The excellent gold extraction behavior is accounted to the graphene areas and oxidized regions of rGO. The graphene areas spontaneously reduce gold ions to metallic gold, and the oxidized regions provide a good dispersibility so that efficient adsorption and reduction of gold ions by the graphene area can be realized. The rGO is also highly selective to gold ions. By controlling the protonation process of the functional groups on the oxidized regions of rGO, it shows an exclusive gold extraction without adsorption of 14 co-existing elements seen in e-waste. These discoveries are further exploited in highly efficient, continuous gold recycling from e-waste with good scalability and economic viability, as exemplified by extracting gold from e-waste using a rGO membrane based flow-through process.

preprint2022arXiv

Out-of-equilibrium criticalities in graphene superlattices

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.

preprint2021arXiv

Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects

Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high currents: (i) a "Doppler-like" shift and splitting of the frequencies of the transverse acoustic (TA) phonons emitted when the electrons undergo inter-Landau level (LL) transitions; (ii) an intra-LL Mach effect with the emission of TA phonons when the electrons approach supersonic speed, and (iii) the onset of elastic inter-LL transitions at a critical carrier drift velocity, analogous to the superfluid Landau velocity. All three quantum phenomena can be unified in a single resonance equation. They offer avenues for research on out-of-equilibrium phenomena in other two-dimensional fermion systems.

preprint2021arXiv

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

preprint2020arXiv

Control of electron-electron interaction in graphene by proximity screening

Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measure the electron-electron scattering length in graphene and report qualitative deviations from the standard behavior. The changes induced by screening become important only at gate dielectric thicknesses of a few nm, much smaller than a typical separation between electrons. Our theoretical analysis agrees well with the scattering rates extracted from measurements of electron viscosity in monolayer graphene and of umklapp electron-electron scattering in graphene superlattices. The results provide a guidance for future attempts to achieve proximity screening of many-body phenomena in two-dimensional systems.

preprint2020arXiv

Giant magneto-birefringence effect and tuneable colouration of 2D crystals' suspensions

One of the long sought-after goals in manipulation of light through light-matter interactions is the realization of magnetic-field-tuneable colouration, so-called magneto-chromatic effect, which holds great promise for optical, biochemical and medical applications due to its contactless and non-invasive nature. This goal can be achieved by magnetic-field controlled birefringence, where colours are produced by the interference between phase-retarded components of transmitted polarised light. Thus far birefringence-tuneable coloration has been demonstrated using electric field, material chirality and mechanical strain but magnetic field control remained elusive due to either weak magneto-optical response of transparent media or low transmittance to visible light of magnetically responsive media, such as ferrofluids. Here we demonstrate magnetically tuneable colouration of aqueous suspensions of two-dimensional cobalt-doped titanium oxide which exhibit an anomalously large magneto-birefringence effect. The colour of the suspensions can be tuned over more than two wavelength cycles in the visible range by moderate magnetic fields below 0.8 T. We show that such giant magneto-chromatic response is due to particularly large phase retardation (>3 pi) of the polarised light, which in its turn is a combined result of a large Cotton-Mouton coefficient (three orders of magnitude larger than for known liquid crystals), relatively high saturation birefringence (delta n = 2 x 10^-4) and high transparency of our suspensions to visible light. The work opens a new avenue to achieve tuneable colouration through engineered magnetic birefringence and can readily be extended to other magnetic 2D nanocrystals. The demonstrated effect can be used in a variety of magneto-optical applications, including magnetic field sensors, wavelength-tuneable optical filters and see-through printing.

preprint2020arXiv

Limits on gas impermeability of graphene

Despite being only one-atom thick, defect-free graphene is considered to be completely impermeable to all gases and liquids. This conclusion is based on theory and supported by experiments that could not detect gas permeation through micrometre-size membranes within a detection limit of 10^5 to 10^6 atoms per second. Here, using small monocrystalline containers tightly sealed with graphene, we show that defect-free graphene is impermeable with an accuracy of eight to nine orders of magnitude higher than in the previous experiments. We could discern permeation of just a few helium atoms per hour, and this detection limit is also valid for all other tested gases (neon, nitrogen, oxygen, argon, krypton and xenon), except for hydrogen. Hydrogen shows noticeable permeation, even though its molecule is larger than helium and should experience a higher energy barrier. The puzzling observation is attributed to a two-stage process that involves dissociation of molecular hydrogen at catalytically active graphene ripples, followed by adsorbed atoms flipping to the other side of the graphene sheet with a relatively low activation energy of about 1.0 electronvolt, a value close to that previously reported for proton transport. Our work provides a key reference for the impermeability of two-dimensional materials and is important from a fundamental perspective and for their potential applications.

preprint2020arXiv

Minibands in twisted bilayer graphene probed by magnetic focusing

Magnetic fields force ballistic electrons injected from a narrow contact to move along skipping orbits and form caustics. This leads to pronounced resistance peaks at nearby voltage probes as electrons are effectively focused inside them, a phenomenon known as magnetic focusing. This can be used not only for the demonstration of ballistic transport but also to study the electronic structure of metals. Here we use magnetic focusing to probe narrow bands in graphene bilayers twisted at 2 degrees. Their minibands are found to support long-range ballistic transport limited at low temperatures by intrinsic electron-electron scattering. A voltage bias between the layers causes strong valley splitting and allows selective focusing for different valleys, which is of interest for using this degree of freedom in frequently-discussed valleytronics.

preprint2020arXiv

Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene

Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.

preprint2019arXiv

Electronic phase separation in topological surface states of rhombohedral graphite

Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states.

preprint2019arXiv

Localized bright luminescence of indirect excitons and trions in MoSe$_2$/WSe$_2$ van der Waals heterostructure

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe$_2$/WSe$_2$ heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, i.e. indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, Thygesen, Nano Lett. 18, 1460 (2018)]. We also report on the realization of IXs with a luminescence linewidth reaching 4~meV at low temperatures. An enhancement of IX luminescence intensity and the narrow linewidth are observed in localized spots.

preprint2016arXiv

Commensurability Effects in Viscosity of Nanoconfined Water

The rate of water flow through hydrophobic nanocapillaries is greatly enhanced as compared to that expected from macroscopic hydrodynamics. This phenomenon is usually described in terms of a relatively large slip length, which is in turn defined by such microscopic properties as the friction between water and capillary surfaces, and the viscosity of water. We show that the viscosity of water and, therefore, its flow rate are profoundly affected by the layered structure of confined water if the capillary size becomes less than 2 nm. To this end we study the structure and dynamics of water confined between two parallel graphene layers using equilibrium molecular dynamics simulations. We find that the shear viscosity is not only greatly enhanced for subnanometer capillaries, but also exhibits large oscillations that originate from commensurability between the capillary size and the size of water molecules. Such oscillating behavior of viscosity and, consequently, the slip length should be taken into account in designing and studying graphene-based and similar membranes for desalination and filtration.

preprint2016arXiv

Graphene bubbles on a substrate : Universal shape and van der Waals pressure

Trapped substances between a 2D crystal, such as graphene, and an atomically flat substrate, for example, hexagonal boron nitride, give rise to the formation of bubbles. We show that the size, shape and internal pressure inside these bubbles are determined by the competition between van der Waals attraction of a 2D crystal to the substrate and the elastic energy needed to deform the atomically thin layer. This presents opportunities to use bubbles to study the elasticity of 2D materials as well as the conditions of confinement, yet none of these have been explored so far, either theoretically or experimentally. We have created a variety of bubbles formed by monolayers of graphene, hBN and MoS2 mechanically exfoliated onto hBN, graphite and MoS2 substrates. Their shapes, analyzed using atomic force microscopy, are found to exhibit universal scaling with well-defined aspect ratios, in agreement with theoretical analysis based on general properties of membranes. We also measured the pressure induced by the confinement, which increased with decreasing bubble's size and reached tens on MPa inside submicron bubbles. This agrees with our theory estimates and suggests that for bubbles with radii < 10 nm hydrostatic pressures can reach close to 1 GPa, which may modify the properties of a trapped material.

preprint2016arXiv

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

preprint2016arXiv

Macroscopic self-reorientation of interacting two-dimensional crystals

Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-controlled movements as a reaction to small changes of the external parameters. Here we demonstrate that, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals and elastic energies results in graphene mechanically self-rotating towards the hexagonal boron nitride crystallographic directions. Such rotation is macroscopic (for graphene flakes of tens of micrometres the tangential movement can be on hundreds of nanometres) and can be used for reproducible manufacturing of aligned van der Waals heterostructures.

preprint2016arXiv

Magnetotransport in single layer graphene in a large parallel magnetic field

Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality.

preprint2016arXiv

Molecular transport through capillaries made with atomic-scale precision

Nanometre-scale pores and capillaries have long been studied because of their importance in many natural phenomena and their use in numerous applications. A more recent development is the ability to fabricate artificial capillaries with nanometre dimensions, which has enabled new research on molecular transport and led to the emergence of nanofluidics. But surface roughness in particular makes it challenging to produce capillaries with precisely controlled dimensions at this spatial scale. Here we report the fabrication of narrow and smooth capillaries through van der Waals assembly, with atomically flat sheets at the top and bottom separated by spacers made of two-dimensional crystals with a precisely controlled number of layers. We use graphene and its multilayers as archetypal two-dimensional materials to demonstrate this technology, which produces structures that can be viewed as if individual atomic planes had been removed from a bulk crystal to leave behind flat voids of a height chosen with atomic-scale precision. Water transport through the channels, ranging in height from one to several dozen atomic planes, is characterized by unexpectedly fast flow (up to 1 metre per second) that we attribute to high capillary pressures (about 1,000 bar) and large slip lengths. For channels that accommodate only a few layers of water, the flow exhibits a marked enhancement that we associate with an increased structural order in nanoconfined water. Our work opens up an avenue to making capillaries and cavities with sizes tunable to ångström precision, and with permeation properties further controlled through a wide choice of atomically flat materials available for channel walls.

preprint2016arXiv

Negative local resistance caused by viscous electron backflow in graphene

Graphene hosts a unique electron system in which electron-phonon scattering is extremely weak but electron-electron collisions are sufficiently frequent to provide local equilibrium above liquid nitrogen temperature. Under these conditions, electrons can behave as a viscous liquid and exhibit hydrodynamic phenomena similar to classical liquids. Here we report strong evidence for this transport regime. We find that doped graphene exhibits an anomalous (negative) voltage drop near current injection contacts, which is attributed to the formation of submicrometer-size whirlpools in the electron flow. The viscosity of graphene's electron liquid is found to be ~0.1 m$^2$ /s, an order of magnitude larger than that of honey, in agreement with many-body theory. Our work shows a possibility to study electron hydrodynamics using high quality graphene.

preprint2016arXiv

Scaling approach to tight-binding transport in realistic graphene devices: the case of transverse magnetic focusing

Ultra-clean graphene sheets encapsulated between hexagonal boron nitride crystals host two-dimensional electron systems in which low-temperature transport is solely limited by the sample size. We revisit the theoretical problem of carrying out microscopic calculations of non-local ballistic transport in such micron-scale devices. By employing the Landauer-Buttiker scattering theory, we propose a novel scaling approach to tight-binding non-local transport in realistic graphene devices. We test our numerical method against experimental data on transverse magnetic focusing (TMF), a textbook example of non-local ballistic transport in the presence of a transverse magnetic field. This comparison enables a clear physical interpretation of all the observed features of the TMF signal, including its oscillating sign.

preprint2016arXiv

Sieving hydrogen isotopes through two dimensional crystals

One-atom-thick crystals are impermeable to atoms and molecules, but hydrogen ions (thermal protons) penetrate through them. We show that monolayers of graphene and boron nitride can be used to separate hydrogen ion isotopes. Employing electrical measurements and mass spectrometry, we find that deuterons permeate through these crystals much slower than protons, resulting in a separation factor of ~10 at room temperature. The isotope effect is attributed to a difference of about 60 meV between zero-point energies of incident protons and deuterons, which translates into the equivalent difference in the activation barriers posed by two dimensional crystals. In addition to providing insight into the proton transport mechanism, the demonstrated approach offers a competitive and scalable way for hydrogen isotope enrichment.

preprint2016arXiv

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

preprint2016arXiv

Van der Waals pressure and its effect on trapped interlayer molecules

Van der Waals assembly of two-dimensional (2D) crystals continue attract intense interest due to the prospect of designing novel materials with on-demand properties. One of the unique features of this technology is the possibility of trapping molecules or compounds between 2D crystals. The trapped molecules are predicted to experience pressures as high as 1 GPa. Here we report measurements of this interfacial pressure by capturing pressure-sensitive molecules and studying their structural and conformational changes. Pressures of 1.2 +/- 0.3 GPa are found using Raman spectrometry for molecular layers of one nanometer in thickness. We further show that this pressure can induce chemical reactions and several trapped salts or compounds are found to react with water at room temperature, leading to 2D crystals of the corresponding oxides. This pressure and its effect should be taken into account in studies of van der Waals heterostructures and can also be exploited to modify materials confined at the atomic interfaces.

preprint2015arXiv

Control of excitons in multi-layer van der Waals heterostructures

We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.

preprint2015arXiv

Lifting of the Landau level degeneracy in graphene devices in a tilted magnetic field

We report on transport and capacitance measurements of graphene devices in magnetic fields up to 30 T. In both techniques, we observe the full splitting of Landau levels and we employ tilted field experiments to address the origin of the observed broken symmetry states. In the lowest energy level, the spin degeneracy is removed at filling factors $ν=\pm1$ and we observe an enhanced energy gap. In the higher levels, the valley degeneracy is removed at odd filling factors while spin polarized states are formed at even $ν$. Although the observation of odd filling factors in the higher levels points towards the spontaneous origin of the splitting, we find that the main contribution to the gap at $ν= -4,-8$, and $-12$ is due to the Zeeman energy.

preprint2015arXiv

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

preprint2015arXiv

Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere

Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest reacts and decomposes in air, which has severely hindered their investigation and possible uses. Here we introduce a remedial approach based on cleavage, transfer, alignment and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.

preprint2015arXiv

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only in the normal-state resistance but also in the critical current. The proximity effect is mostly suppressed in magnetic fields below 10mT, showing the conventional Fraunhofer pattern. Unexpectedly, some proximity survives even in fields higher than 1 T. Superconducting states randomly appear and disappear as a function of field and carrier concentration, and each of them exhibits a supercurrent carrying capacity close to the universal quantum limit. We attribute the high-field Josephson effect to mesoscopic Andreev states that persist near graphene edges. Our work reveals new proximity regimes that can be controlled by quantum confinement and cyclotron motion.

preprint2015arXiv

Resonant tunnelling between the chiral Landau states of twisted graphene lattices

A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. An applied magnetic field quantises graphene's gapless conduction and valence band states into discrete Landau levels, allowing us to resolve individual inter-Landau level transitions and thereby demonstrate that the energy, momentum and chiral properties of the electrons are conserved in the tunnelling process. We also demonstrate that the change in the semiclassical cyclotron trajectories, following a tunnelling event, is a form of Klein tunnelling for inter-layer transitions.

preprint2015arXiv

Superconductivity in Ca-doped graphene

Graphene, a zero-gap semimetal, can be transformed into a metallic, semiconducting or insulating state by either physical or chemical modification. Superconductivity is conspicuously missing among these states despite considerable experimental efforts as well as many theoretical proposals. Here, we report superconductivity in calcium-decorated graphene achieved by intercalation of graphene laminates that consist of well separated and electronically decoupled graphene crystals. In contrast to intercalated graphite, we find that Ca is the only dopant that induces superconductivity in graphene laminates above 1.8 K among intercalants used in our experiments such as potassium, caesium and lithium. Ca-decorated graphene becomes superconducting at ~ 6 K and the transition temperature is found to be strongly dependent on the confinement of the Ca layer and the induced charge carrier concentration. In addition to the first evidence for superconducting graphene, our work shows a possibility of inducing and studying superconductivity in other 2D materials using their laminates.

preprint2015arXiv

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.

preprint2014arXiv

Commensurate-incommensurate transition for graphene on hexagonal boron nitride

When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of condensed matter physics: from magnetism and dislocations in crystals, to vortices in superconductors, and atomic layers adsorbed on a crystalline surface. Of particular interest might be the properties of topological defects between the two commensurate phases: solitons, domain walls, and dislocation walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotational angle between the two hexagonal lattices, graphene can either stretch to adjust to a slightly different hBN periodicity (the commensurate state found for small rotational angles) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the resulting strain. Such soliton-like objects present significant fundamental interest, and their presence might explain recent observations when the electronic, optical, Raman and other properties of graphene-hBN heterostructures have been notably altered.

preprint2014arXiv

Detecting Topological Currents in Graphene Superlattices

Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observe this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several microns away from the nominal current path. Locally, topological currents are comparable in strength to the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by gate voltage can be exploited for information processing based on the valley degrees of freedom.

preprint2014arXiv

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

preprint2014arXiv

Graphene-protected copper and silver plasmonics

Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered (in addition to high losses) by the absence of stable and inexpensive metal films suitable for plasmonic applications. This may seem surprising given the number of metal compounds to choose from. Unfortunately, most of them either exhibit a strong damping of surface plasmons or easily oxidize and corrode. To this end, there has been continuous search for alternative plasmonic materials that are, unlike gold, the current metal of choice in plasmonics, compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered with one to a few graphene layers show excellent plasmonics characteristics surpassing those of gold films. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic waveguides and test sensitivity of surface plasmon resonances. Our results are likely to initiate a wide use of graphene-protected plasmonics.

preprint2014arXiv

Heterostructures produced from nanosheet-based inks

The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transfer of individual 2D crystals, though allowing exceptional control over the quality of such structures and interfaces, is not scalable. Here we show that such heterostructures can be assembled from chemically exfoliated 2D crystals, allowing for low-cost and scalable methods to be used in the device fabrication.

preprint2014arXiv

Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices

Self-similarity and fractals have fascinated researchers across various disciplines. In graphene placed on boron nitride and subjected to a magnetic field, self-similarity appears in the form of numerous replicas of the original Dirac spectrum, and their quantization gives rise to a fractal pattern of Landau levels, referred to as the Hofstadter butterfly. Here we employ capacitance spectroscopy to probe directly the density of states (DoS) and energy gaps in this spectrum. Without a magnetic field, replica spectra are seen as pronounced DoS minima surrounded by van Hove singularities. The Hofstadter butterfly shows up as recurring Landau fan diagrams in high fields. Electron-electron interactions add another twist to the self-similar behaviour. We observe suppression of quantum Hall ferromagnetism, a reverse Stoner transition at commensurable fluxes and additional ferromagnetism within replica spectra. The strength and variety of the interaction effects indicate a large playground to study many-body physics in fractal Dirac systems.

preprint2014arXiv

Impermeable Barrier Films and Protective Coatings Based on Reduced Graphene Oxide

Barrier films preventing permeation of gases and moistures are important for many industries ranging from food to medical and from chemical to electronic. From this perspective, graphene has recently attracted particular interest because its defect free monolayers are impermeable to all gases and liquids. However, it has proved challenging to develop large-area defectless graphene films suitable for industrial use. Here we report barrier properties of multilayer graphitic films made by chemical reduction of easily and cheaply produced graphene oxide laminates. They are found to provide a practically perfect barrier that blocks all gases, liquids and aggressive chemicals including, for example, hydrofluoric acid. In particular, if graphene oxide laminates are reduced in hydroiodic acid, no permeation of hydrogen and water could be detected for films as thin as 30 nm, which remain optically transparent. The films thicker than 100 nm become completely impermeable. The exceptional barrier properties are attributed to a high degree of graphitization of the laminates and little structural damage during reduction. This work indicates a close prospect of thin protective coatings with stability and inertness similar to that of graphene and bulk graphite, which can be interesting for numerous applications.

preprint2014arXiv

Landau level spectroscopy of electron-electron interactions in graphene

We present magneto-Raman scattering studies of electronic inter Landau level excitations in quasi-neutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of non-interacting massless Dirac electrons, but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter Landau level excitations in graphene are sensitive to electron-electron interactions due to the non-applicability of the Kohn theorem in this system, with a clearly non-parabolic dispersion relation.

preprint2014arXiv

Light-emitting diodes by bandstructure engineering in van der Waals heterostructures

The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light emitting diodes (LEDs) made by stacking up metallic graphene, insulating hexagonal boron nitride (hBN) and various semiconducting monolayers into complex but carefully designed sequences. Our first devices already exhibit extrinsic quantum efficiency of nearly 10% and the emission can be tuned over a wide range of frequencies by appropriately choosing and combining 2D semiconductors (monolayers of transition metal dichalcogenides). By preparing the heterostructures on elastic and transparent substrates, we show that they can also provide the basis for flexible and semi-transparent electronics. The range of functionalities for the demonstrated heterostructures is expected to grow further with increasing the number of available 2D crystals and improving their electronic quality.

preprint2014arXiv

Precise and ultrafast molecular sieving through graphene oxide membranes

There has been intense interest in filtration and separation properties of graphene-based materials that can have well-defined nanometer pores and exhibit low frictional water flow inside them. Here we investigate molecular permeation through graphene oxide laminates. They are vacuum-tight in the dry state but, if immersed in water, act as molecular sieves blocking all solutes with hydrated radii larger than 4.5A. Smaller ions permeate through the membranes with little impedance, many orders of magnitude faster than the diffusion mechanism can account for. We explain this behavior by a network of nanocapillaries that open up in the hydrated state and accept only species that fit in. The ultrafast separation of small salts is attributed to an 'ion sponge' effect that results in highly concentrated salt solutions inside graphene capillaries.

preprint2014arXiv

Proton transport through one atom thick crystals

Graphene is impermeable to all gases and liquids, and even such a small atom as hydrogen is not expected to penetrate through graphene's dense electronic cloud within billions of years. Here we show that monolayers of graphene and hexagonal boron nitride (hBN) are unexpectedly permeable to thermal protons, hydrogen ions under ambient conditions. As a reference, no proton transport could be detected for a monolayer of molybdenum disulfide, bilayer graphene or multilayer hBN. At room temperature, monolayer hBN exhibits the highest proton conductivity with a low activation energy of about 0.3 eV but graphene becomes a better conductor at elevated temperatures such that its resistivity to proton flow is estimated to fall below 10^-3 Ohm per cm2 above 250 C. The proton barriers can be further reduced by decorating monolayers with catalytic nanoparticles. These atomically thin proton conductors could be of interest for many hydrogen-based technologies.

preprint2014arXiv

Singular-phase nanooptics: towards label-free single molecule detection

Non-trivial topology of phase is crucial for many important physics phenomena such as, for example, the Aharonov-Bohm effect 1 and the Berry phase 2. Light phase allows one to create "twisted" photons 3, 4 , vortex knots 5, dislocations 6 which has led to an emerging field of singular optics relying on abrupt phase changes 7. Here we demonstrate the feasibility of singular visible-light nanooptics which exploits the benefits of both plasmonic field enhancement and non-trivial topology of light phase. We show that properly designed plasmonic nanomaterials exhibit topologically protected singular phase behaviour which can be employed to radically improve sensitivity of detectors based on plasmon resonances. By using reversible hydrogenation of graphene 8 and a streptavidin-biotin test 9, we demonstrate areal mass sensitivity at a level of femto-grams per mm2 and detection of individual biomolecules, respectively. Our proof-of-concept results offer a way towards simple and scalable single-molecular label-free biosensing technologies.

preprint2014arXiv

Square ice in graphene nanocapillaries

Adsorbed layers of water are ubiquitously present at surfaces and fill in microscopic pores, playing a central role in many phenomena in such diverse fields as materials science, geology, biology, tribology, nanotechnology. Despite such importance, the crystal structure of nanoconfined water remains largely unknown. Here we report high-resolution electron microscopy of mono- and few- layers of water confined between two graphene sheets, an archetypal example of hydrophobic confinement. Confined water is found to form square ice at room temperature - a phase with symmetry principally different from the conventional tetrahedral geometry of hydrogen bonding. The square ice has a high packing density with a lattice constant of 2.83 angstrom and during TEM observation assembles in bi- and tri- layer crystallites exhibiting AA stacking. Our findings are important for understanding of interfacial phenomena and, in particular, shed light on ultrafast transport of water through hydrophobic nanocapillaries. Our MD simulations show that square ice is likely to be common inside hydrophobic nanochannels, independent of their exact atomic makeup.

preprint2014arXiv

Stacking boundaries and transport in bilayer graphene

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties, with a minimal conductivity of the order of $2e^2/h$. Here we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on the reversible formation of boundaries between stacking domains (`solitons'). We argue, using a numerical analysis, that the hallmark features of the previously inferred many-body insulating state can be explained by scattering on boundaries between domains with different stacking order (AB and BA). We furthermore present experimental evidence, reinforcing our interpretation, of reversible switching between a metallic and an insulating regime in suspended bilayers when subjected to thermal cycling or high current annealing.

preprint2014arXiv

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology.

preprint2013arXiv

Accurate determination of electron-hole asymmetry and next-nearest neighbor hopping in graphene

The next-nearest neighbor hopping term t' determines a magnitude and, hence, importance of several phenomena in graphene, which include self-doping due to broken bonds and the Klein tunneling that in the presence of t' is no longer perfect. Theoretical estimates for t' vary widely whereas a few existing measurements by using polarization resolved magneto-spectroscopy have found surprisingly large t', close or even exceeding highest theoretical values. Here we report dedicated measurements of the density of states in graphene by using high-quality capacitance devices. The density of states exhibits a pronounced electron-hole asymmetry that increases linearly with energy. This behavior yields t' approx -0.30 eV +-15%, in agreement with the high end of theory estimates. We discuss the role of electron-electron interactions in determining t' and overview phenomena which can be influenced by such a large value of t'.

preprint2013arXiv

Cloning of Dirac fermions in graphene superlattices

Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures.

preprint2013arXiv

Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and offers a hope due to its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that adatoms magnetism in graphene is itinerant and can be controlled by doping, so that magnetic moments can be switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions: one coming from the same itinerant magnetism and the other due to broken bonds. Our work suggests that magnetic response of graphene can be controlled by the field effect, similar to its transport and optical properties, and that spin diffusion length can be significantly enhanced above a certain carrier density.

preprint2013arXiv

Generic Miniband Structure of Graphene on a Hexagonal Substrate

Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moiré miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.

preprint2013arXiv

Interaction phenomena in graphene seen through quantum capacitance

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

preprint2013arXiv

Resonant tunnelling and negative differential conductance in graphene transistors

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonant peak in the device characteristics occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Whereas conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

preprint2013arXiv

The effect of electron dielectric response on the quantum capacitance of graphene in a strong magnetic field

The quantum capacitance of graphene can be negative when the graphene is placed in a strong magnetic field, which is a clear experimental signature of positional correlations between electrons. Here we show that the quantum capacitance of graphene is also strongly affected by its dielectric polarizability, which in a magnetic field is wave vector-dependent. We study this effect both theoretically and experimentally. We develop a theory and numerical procedure for accounting for the graphene dielectric response, and we present measurements of the quantum capacitance of high-quality graphene capacitors on boron nitride. Theory and experiment are found to be in good agreement.

preprint2013arXiv

Van der Waals heterostructures

Research on graphene and other two-dimensional atomic crystals is intense and likely to remain one of the hottest topics in condensed matter physics and materials science for many years. Looking beyond this field, isolated atomic planes can also be reassembled into designer heterostructures made layer by layer in a precisely chosen sequence. The first - already remarkably complex - such heterostructures (referred to as 'van der Waals') have recently been fabricated and investigated revealing unusual properties and new phenomena. Here we review this emerging research area and attempt to identify future directions. With steady improvement in fabrication techniques, van der Waals heterostructures promise a new gold rush, rather than a graphene aftershock.

preprint2012arXiv

Circular dichroism of magneto-phonon resonance in doped graphene

Polarization resolved, Raman scattering response due to E$_{2g}$ phonon in monolayer graphene has been investigated in magnetic fields up to 29 T. The hybridization of the E$_{2g}$ phonon with only the fundamental inter Landau level excitation (involving the n=0 Landau level) is observed and only in one of the two configurations of the circularly crossed polarized excitation and scattered light. This polarization anisotropy of the magneto-phonon resonance is shown to be inherent to relatively strongly doped graphene samples, with carrier concentration typical for graphene deposited on SiO$_2$.

preprint2012arXiv

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images.

preprint2012arXiv

How close can one approach the Dirac point in graphene experimentally?

The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap.

preprint2012arXiv

Reply to Comment by D. Spemann et al [EPL 98 (2012) 57006, arXiv:1204.2992]

This article is a reply to the Comment by D. Spemann et al (arXiv:1204.2992) in response to our paper 'Revealing common artifacts due to ferromagnetic inclusions in highly oriented pyrolytic graphite' (EPL, 97 (2012) 47001).

preprint2012arXiv

Revealing common artifacts due to ferromagnetic inclusions in highly-oriented pyrolytic graphite

We report on an extensive investigation to figure out the origin of room-temperature ferromagnetism that is commonly observed by SQUID magnetometry in highly-oriented pyrolytic graphite (HOPG). Electron backscattering and X-ray microanalysis revealed the presence of micron-size magnetic clusters (predominantly Fe) that are rare and would be difficult to detect without careful search in a scanning electron microscope in the backscattering mode. The clusters pin to crystal boundaries and their quantities match the amplitude of typical ferromagnetic signals. No ferromagnetic response is detected in samples where we could not find such magnetic inclusions. Our experiments show that the frequently reported ferromagnetism in pristine HOPG is most likely to originate from contamination with Fe-rich inclusions introduced presumably during crystal growth.

preprint2012arXiv

Spin-half paramagnetism in graphene induced by point defects

Using magnetization measurements, we show that point defects in graphene - fluorine adatoms and irradiation defects (vacancies) - carry magnetic moments with spin 1/2. Both types of defects lead to notable paramagnetism but no magnetic ordering could be detected down to liquid helium temperatures. The induced paramagnetism dominates graphene's low-temperature magnetic properties despite the fact that maximum response we could achieve was limited to one moment per approximately 1000 carbon atoms. This limitation is explained by clustering of adatoms and, for the case of vacancies, by losing graphene's structural stability.

preprint2012arXiv

Strong Coulomb drag and broken symmetry in double-layer graphene

Spatially separated electron systems remain strongly coupled by electron-electron interactions even when they cannot exchange particles, provided that the layer separation d is comparable to a characteristic distance l between charge carriers within layers. One of the consequences of this remote coupling is a phenomenon called Coulomb drag, in which an electric current passed through one of the layers causes frictional charge flow in the other layer. Previously, only the regime of weak (d>>l) to intermediate (d ~ l) coupling could be studied experimentally. Here we use graphene-BN heterostructures with d down to 1 nm to probe interlayer interactions and Coulomb drag in the limit d<<l where the two Dirac liquids effectively nest within the same plane, but still can be tuned and measured independently. The strongly interacting regime reveals many unpredicted features that are qualitatively different from those observed previously. In particular, although drag vanishes because of electron-hole symmetry when either layer is neutral, we find that drag is at its strongest when /both/ layers are neutral. Under this circumstance, drag is positive in zero magnetic field but changes its sign and rapidly grows in strength with field. The drag remains strong at room temperature. The broken electron-hole symmetry is attributed to mutual polarization of closely-spaced interacting layers. The two-fluid Dirac system offers a large parameter space for further investigation of strong interlayer interaction phenomena.

preprint2011arXiv

Dirac cones reshaped by interaction effects in suspended graphene

We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity describing the spectral slope reaches ~3x10^6 m/s at n <10^10 cm^-2, three times the value commonly used for graphene. The observed changes are attributed to electron-electron interaction that renormalizes the Dirac spectrum because of weak screening. Our experiments also put an upper limit of ~0.1 meV on the possible gap in graphene.

preprint2011arXiv

Field-effect tunneling transistor based on vertical graphene heterostructures

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.

preprint2011arXiv

Giant Nonlocality near the Dirac Point in Graphene

Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observe a large nonlocal response near the Dirac point in fields as low as 0.1T, which persists up to room temperature. The nonlocality is consistent with the long-range flavor currents induced by lifting of spin/valley degeneracy. The effect is expected to contribute strongly to all magnetotransport phenomena near the neutrality point.

preprint2011arXiv

Giant Spin-Hall Effect induced by Zeeman Interaction in Graphene

We propose a new approach to generate and detect spin currents in graphene, based on a large spin-Hall response arising near the neutrality point in the presence of external magnetic field. Spin currents result from the imbalance of the Hall resistivity for the spin-up and spin-down carriers induced by Zeeman interaction, and do not involve spin-orbit interaction. Large values of the spin-Hall response achievable in moderate magnetic fields produced by on-chip sources, and up to room temperature, make the effect viable for spintronics applications.

preprint2011arXiv

Graphene bubbles with controllable curvature

Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those which allow strong modification of the electronic properties of graphene. We show that the shape of the bubble can be controlled by an external electric field. This effect can be used to make graphene-based adaptive focus lenses.

preprint2011arXiv

Interaction-Driven Spectrum Reconstruction in Bilayer Graphene

The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities. Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra and the high quality of our samples allowed us to observe strong spectrum reconstructions and electron topological transitions that can be attributed to a nematic phase transition and a decrease in rotational symmetry. These results are especially surprising because no interaction effects have been observed so far in bilayer graphene in the absence of an applied magnetic field.

preprint2011arXiv

Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

preprint2011arXiv

Strong Plasmonic Enhancement of Photovoltage in Graphene

Amongst the wide spectrum of potential applications of graphene, ranging from transistors and chemical-sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit/s\cite. However, the low responsivity of graphene-based photodetectors compared to traditional III-V based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodectors can be increased by up to 20 times, due to field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved employing nanostructures of different geometries.

preprint2011arXiv

Tunable metal-insulator transition in double-layer graphene heterostructures

We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a minimum metallic conductivity at the neutrality point, and its resistivity diverges at low temperatures. This divergence can be suppressed by magnetic field or by reducing the carrier density in the adjacent layer. We believe that the observed localization is intrinsic for neutral graphene with generic disorder if metallic electron-hole puddles are screened out.

preprint2011arXiv

Unimpeded permeation of water through helium-leak-tight graphene-based membranes

Permeation through nanometer pores is important in the design of materials for filtration and separation techniques and because of unusual fundamental behavior arising at the molecular scale. We found that submicron-thick membranes made from graphene oxide can be completely impermeable to liquids, vapors and gases, including helium, but allow unimpeded permeation of water (H2O permeates through the membranes at least 10^10 times faster than He). We attribute these seemingly incompatible observations to a low-friction flow of a monolayer of water through two dimensional capillaries formed by closely spaced graphene sheets. Diffusion of other molecules is blocked by reversible narrowing of the capillaries in low humidity and/or by their clogging with water.

preprint2010arXiv

Density of states and zero Landau level probed through capacitance of graphene

We report capacitors in which a finite electronic compressibility of graphene dominates the electrostatics, resulting in pronounced changes in capacitance as a function of magnetic field and carrier concentration. The capacitance measurements have allowed us to accurately map the density of states D, and compare it against theoretical predictions. Landau oscillations in D are robust and zero Landau level (LL) can easily be seen at room temperature in moderate fields. The broadening of LLs is strongly affected by charge inhomogeneity that leads to zero LL being broader than other levels.

preprint2010arXiv

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

preprint2010arXiv

Fluorographene: Two Dimensional Counterpart of Teflon

We report a stoichiometric derivative of graphene with a fluorine atom attached to each carbon. Raman, optical, structural, micromechanical and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity >10^12 Ohm per square) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting Young's modulus of 100 N/m and sustaining strains of 15%. Fluorographene is inert and stable up to 400C even in air, similar to Teflon.

preprint2010arXiv

From One Electron to One Hole: Quasiparticle Counting in Graphene Quantum Dots Determined by Electrochemical and Plasma Etching

Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer accuracy. In this letter we demonstrate graphene-based quantum dots created by using atomic force microscopy (AFM) with tip-assisted electrochemical etching. This lithography technique provides resolution of about 20 nm, which can probably be further improved by employing sharper tips and better humidity control. The behavior of our smallest dots in magnetic field has allowed us to identify the charge neutrality point and distinguish the states with one electron, no charge and one hole left inside the quantum dot.

preprint2010arXiv

Graphene as a transparent conductive support for studying biological molecules by transmission electron microscopy

We demonstrate the application of graphene as a support for imaging individual biological molecules in transmission electron microscope (TEM). A simple procedure to produce free-standing graphene membranes has been designed. Such membranes are extremely robust and can support practically any sub-micrometer object. Tobacco mosaic virus has been deposited on graphene samples and observed in a TEM. High contrast has been achieved even though no staining has been applied.

preprint2010arXiv

Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

We describe the identification of single- and few- layer boron nitride. Its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions. Raman spectroscopy can be used to confirm BN monolayers. They exhibit an upshift in the fundamental Raman mode by up to 4 cm-1. The number of layers in thicker crystals can be counted by exploiting an integer-step increase in the Raman intensity and optical contrast.

preprint2010arXiv

Limits on electron quality in suspended graphene due to flexural phonons

The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases quadratically with $T$. Flexural phonons limit the intrinsic mobility down to a few $\text{m}^2/\text{Vs}$ at room $T$. Their effect can be eliminated by applying strain or placing graphene on a substrate.

preprint2010arXiv

Limits on intrinsic magnetism in graphene

We have studied magnetization of graphene nanocrystals obtained by sonic exfoliation of graphite. No ferromagnetism is detected at any temperature down to 2 K. Neither do we find strong paramagnetism expected due to the massive amount of edge defects. Rather, graphene is strongly diamagnetic, similar to graphite. Our nanocrystals exhibit only a weak paramagnetic contribution noticeable below 50K. The measurements yield a single species of defects responsible for the paramagnetism, with approximately one magnetic moment per typical graphene crystallite.

preprint2010arXiv

On resonant scatterers as a factor limiting carrier mobility in graphene

We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of about 1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity. If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities achievable in graphene on a substrate.

preprint2010arXiv

Quantum Hall activation gaps in bilayer graphene

We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $ν=\pm4$ and $ν=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.

preprint2010arXiv

Resonant scattering by realistic impurities in graphene

We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means of density functional calculations various organic groups as well as ad-atoms like H absorbed to graphene are shown to create midgap states within +-0.03eV around the neutrality point. A low energy tight-binding description is mapped out. Boltzmann transport theory as well as a numerically exact Kubo formula approach yield the conductivity of graphene contaminated with these realistic impurities in accordance with recent experiments.

preprint2010arXiv

Single Layer Behavior and Its Breakdown in Twisted Graphene Layers

We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single layer graphene, while for smaller angles we observe a slow-down of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist induced Van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.

preprint2010arXiv

Spectroscopic ellipsometry of graphene and an exciton-shifted van Hove peak in absorption

We demonstrate that optical transparency of any two-dimensional system with a symmetric electronic spectrum is governed by the fine structure constant and suggest a simple formula that relates a quasi-particle spectrum to an optical absorption of such a system. These results are applied to graphene deposited on a surface of oxidized silicon for which we measure ellipsometric spectra, extract optical constants of a graphene layer and reconstruct the electronic dispersion relation near the K point using optical transmission spectra. We also present spectroscopic ellipsometry analysis of graphene placed on amorphous quartz substrates and report a pronounced peak in ultraviolet absorption at 4.6 eV because of a van Hove singularity in graphene's density of states. The peak is downshifted by 0.5 eV probably due to excitonic effects.

preprint2010arXiv

Thermal conductivity of graphene in Corbino membrane geometry

Local laser excitation and temperature readout from the intensity ratio of Stokes to anti-Stokes Raman scattering signals are employed to study the thermal properties of a large graphene membrane. The concluded value of the heat conductivity coefficient κ~ 600 W/m \cdot K is smaller than previously reported but still validates the conclusion that graphene is a very good thermal conductor.

preprint2009arXiv

Effect of high-k environment on charge carrier mobility in graphene

It is widely assumed that the dominant source of scattering in graphene is charged impurities in a substrate. We have tested this conjecture by studying graphene placed on various substrates and in high-k media. Unexpectedly, we have found no significant changes in carrier mobility either for different substrates or by using glycerol, ethanol and water as a top dielectric layer. This suggests that Coulomb impurities are not the scattering mechanism that limits the mean free path currently attainable for graphene on a substrate.

preprint2009arXiv

Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no carriers and the half-integer quantum Hall effect (QHE) observable even at room temperature [1-3]. Because graphene is only one atom thick, it is also amenable to external influences including mechanical deformation. The latter offers a tempting prospect of controlling graphene's properties by strain and, recently, several reports have examined graphene under uniaxial deformation [4-8]. Although the strain can induce additional Raman features [7,8], no significant changes in graphene's band structure have been either observed or expected for realistic strains of approx. 10% [9-11]. Here we show that a designed strain aligned along three main crystallographic directions induces strong gauge fields [12-14] that effectively act as a uniform magnetic field exceeding 10 T. For a finite doping, the quantizing field results in an insulating bulk and a pair of countercirculating edge states, similar to the case of a topological insulator [15-20]. We suggest realistic ways of creating this quantum state and observing the pseudo-magnetic QHE. We also show that strained superlattices can be used to open significant energy gaps in graphene's electronic spectrum.

preprint2009arXiv

Gate tunable charged-phonon effect in bilayer graphene

We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode Eu (~0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel bands of the same character, while the asymmetry is due to the interaction with the continuum of transitions between the lowest hole and electron bands. The growth of the peak is a manifestation of the "charged-phonon" effect observed previously in organic chain conductors and doped fullerenes, which can now be tuned with the gate voltage.

preprint2009arXiv

Generating quantizing pseudomagnetic fields by bending graphene ribbons

We analyze the mechanical deformations that are required to create uniform pseudomagnetic fields in graphene. It is shown that, if a ribbon is bent in-plane into a circular arc, this can lead to fields exceeding 10T, which is sufficient for the observation of pseudo-Landau quantization. The arc geometry is simpler than those suggested previously and, in our opinion, has much better chances to be realized experimentally soon. The effects of a scalar potential induced by dilatation in this geometry is shown to be negligible.

preprint2009arXiv

Graphene: Status and Prospects

Graphene is a wonder material with many superlatives to its name. It is the thinnest material in the universe and the strongest ever measured. Its charge carriers exhibit giant intrinsic mobility, have the smallest effective mass (it is zero) and can travel micrometer-long distances without scattering at room temperature. Graphene can sustain current densities 6 orders higher than copper, shows record thermal conductivity and stiffness, is impermeable to gases and reconciles such conflicting qualities as brittleness and ductility. Electron transport in graphene is described by a Dirac-like equation, which allows the investigation of relativistic quantum phenomena in a bench-top experiment. What are other surprises that graphene keeps in store for us? This review analyses recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.

preprint2009arXiv

Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point

There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic homogeneity. We believe that it is helpful to point out some problems related to such measurements. By using experimental examples, we illustrate that the charge inhomogeneity induced by spurious chemical doping or metal contacts can lead to large systematic errors in assessing graphene's transport properties and, in particular, its minimal conductivity. The problems are most severe in the case of two-probe measurements where the contact resistance is found to strongly vary as a function of gate voltage.

preprint2009arXiv

Making Graphene Luminescent

We show that strong photoluminescence (PL) can be induced in single-layer graphene on using an oxygen plasma treatment. PL characteristics are spatially uniform across the flakes and connected to elastic scattering spectra distinctly different from those of gapless pristine graphene. Oxygen plasma can be used to selectively convert the topmost layer when multi-layer samples are treated

preprint2007arXiv

Molecular Doping of Graphene

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport under ambient conditions [1-4]. The latter makes graphene a promising material for future electronics and the recently demonstrated possibility of chemical doping without significant change in mobility has improved graphene's prospects further [13]. However, to find optimal dopants and, more generally, to progress towards graphene-based electronics requires understanding the physical mechanism behind the chemical doping, which has been lacking so far. Here, we present the first joint experimental and theoretical investigation of adsorbates on graphene. We elucidate a general relation between the doping strength and whether or not adsorbates have a magnetic moment: The paramagnetic single NO2 molecule is found to be a strong acceptor, whereas its diamagnetic dimer N2O4 causes only weak doping. This effect is related to the peculiar density of states of graphene, which provides an ideal situation for model studies of doping effects in semiconductors. Furthermore, we explain recent results on its "chemical sensor" properties, in particular, the possibility to detect a single NO2 molecule [13].

preprint2005arXiv

Two-Dimensional Gas of Massless Dirac Fermions in Graphene

Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.

preprint2000arXiv

Non-Quantized Penetration of Magnetic Field in the Vortex State of Superconductors

As first pointed out by Bardeen and Ginzburg in the early sixties, the amount of magnetic flux carried by vortices depends on their distance to the sample edge and can be smaller than one flux quantum, f0 = h/2e. In bulk superconductors, this reduction of flux becomes negligible already at submicron distances from the edge but, in thin films, the effect may survive at much larger distances. In the absence of any experimental observation, such flux reduction is perceived to be an exotic or unimportant effect, and it is often assumed that magnetic field enters type-II superconductors in units of f0. Here we report the measurements of the amount of flux associated with the entrance of individual vortices in a superconducting film and show that the flux that they bring in, always differs substantially from f0. We have observed vortices that carry as little as 0.001 f0 as well as seemingly "negative vortices" whose penetration leads to the expulsion of magnetic field. We distinguish two phenomena responsible for non-quantized flux penetration: the finite-size effect and a non-linear screening of magnetic field in the presence of a surface barrier. The latter effect has previously not been considered but is likely to cause non-quantized penetration in many cases.

A. K. Geim

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96 published item(s)

Long-term memory and synapse-like dynamics in two-dimensional nanofluidic channels

Alternating superconducting and charge density wave monolayers within bulk 6R-TaS2

Highly Efficient and Selective Extraction of Gold by Reduced Graphene Oxide

Out-of-equilibrium criticalities in graphene superlattices

Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Control of electron-electron interaction in graphene by proximity screening

Giant magneto-birefringence effect and tuneable colouration of 2D crystals' suspensions

Limits on gas impermeability of graphene

Minibands in twisted bilayer graphene probed by magnetic focusing

Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene

Electronic phase separation in topological surface states of rhombohedral graphite

Localized bright luminescence of indirect excitons and trions in MoSe$_2$/WSe$_2$ van der Waals heterostructure

Commensurability Effects in Viscosity of Nanoconfined Water

Graphene bubbles on a substrate : Universal shape and van der Waals pressure

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

Macroscopic self-reorientation of interacting two-dimensional crystals

Magnetotransport in single layer graphene in a large parallel magnetic field

Molecular transport through capillaries made with atomic-scale precision

Negative local resistance caused by viscous electron backflow in graphene

Scaling approach to tight-binding transport in realistic graphene devices: the case of transverse magnetic focusing

Sieving hydrogen isotopes through two dimensional crystals

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Van der Waals pressure and its effect on trapped interlayer molecules

Control of excitons in multi-layer van der Waals heterostructures

Lifting of the Landau level degeneracy in graphene devices in a tilted magnetic field

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

Resonant tunnelling between the chiral Landau states of twisted graphene lattices

Superconductivity in Ca-doped graphene

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Commensurate-incommensurate transition for graphene on hexagonal boron nitride

Detecting Topological Currents in Graphene Superlattices

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Graphene-protected copper and silver plasmonics

Heterostructures produced from nanosheet-based inks

Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices

Impermeable Barrier Films and Protective Coatings Based on Reduced Graphene Oxide

Landau level spectroscopy of electron-electron interactions in graphene

Light-emitting diodes by bandstructure engineering in van der Waals heterostructures

Precise and ultrafast molecular sieving through graphene oxide membranes

Proton transport through one atom thick crystals

Singular-phase nanooptics: towards label-free single molecule detection

Square ice in graphene nanocapillaries

Stacking boundaries and transport in bilayer graphene

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Accurate determination of electron-hole asymmetry and next-nearest neighbor hopping in graphene

Cloning of Dirac fermions in graphene superlattices

Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

Generic Miniband Structure of Graphene on a Hexagonal Substrate

Interaction phenomena in graphene seen through quantum capacitance

Resonant tunnelling and negative differential conductance in graphene transistors

The effect of electron dielectric response on the quantum capacitance of graphene in a strong magnetic field

Van der Waals heterostructures

Circular dichroism of magneto-phonon resonance in doped graphene

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

How close can one approach the Dirac point in graphene experimentally?

Reply to Comment by D. Spemann et al [EPL 98 (2012) 57006, arXiv:1204.2992]

Revealing common artifacts due to ferromagnetic inclusions in highly-oriented pyrolytic graphite

Spin-half paramagnetism in graphene induced by point defects

Strong Coulomb drag and broken symmetry in double-layer graphene

Dirac cones reshaped by interaction effects in suspended graphene

Field-effect tunneling transistor based on vertical graphene heterostructures

Giant Nonlocality near the Dirac Point in Graphene

Giant Spin-Hall Effect induced by Zeeman Interaction in Graphene

Graphene bubbles with controllable curvature

Interaction-Driven Spectrum Reconstruction in Bilayer Graphene

Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Strong Plasmonic Enhancement of Photovoltage in Graphene

Tunable metal-insulator transition in double-layer graphene heterostructures

Unimpeded permeation of water through helium-leak-tight graphene-based membranes

Density of states and zero Landau level probed through capacitance of graphene

Electronic properties of a biased graphene bilayer