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Lukas Chrostowski

Lukas Chrostowski contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2026arXiv

Neuromorphic Photonic Computing with an Electro-Optic Analog Memory

In neuromorphic photonic systems, device operations are typically governed by analog signals, necessitating digital-to-analog converters (DAC) and analog-to-digital converters (ADC). However, data movement between memory and these converters in conventional von Neumann architectures incur significant energy costs. We propose an analog electronic memory co-located with photonic computing units to eliminate repeated long-distance data movement. Here, we demonstrate a monolithically integrated neuromorphic photonic circuit with on-chip capacitive analog memory and evaluate its performance in machine learning for in situ training and inference using the MNIST dataset. Our analysis shows that integrating analog memory into a neuromorphic photonic architecture can achieve over 26x power savings compared to conventional SRAM-DAC architectures. Furthermore, maintaining a minimum analog memory retention-to-network-latency ratio of 100 maintains >90% inference accuracy, enabling leaky analog memories without substantial performance degradation. This approach reduces reliance on DACs, minimizes data movement, and offers a scalable pathway toward energy-efficient, high-speed neuromorphic photonic computing.

preprint2024arXiv

Packaged Cryogenic Photon Pair Source Using an Effective Packaging Methodology for Cryogenic Integrated Optics

A new cryogenic packaging methodology that is widely applicable to packaging any integrated photonics circuit for operation at both room temperature and cryogenic temperature is reported. The method requires only equipment and techniques available in any integrated optics lab and works on standard integrated photonic chips. Our methodology is then used to enable the measurement of a single photon pair sourced based on a silicon ring resonator at cryogenic temperatures. When operating at 5.9 K, this source is measured to have a peak pair generation rate 183 times greater then at room temperature in the CL-band.

preprint2024arXiv

Reinforcement Learning for Photonic Component Design

We present a new fab-in-the-loop reinforcement learning algorithm for the design of nano-photonic components that accounts for the imperfections present in nanofabrication processes. As a demonstration of the potential of this technique, we apply it to the design of photonic crystal grating couplers fabricated on an air clad 220 nm silicon on insulator single etch platform. This fab-in-the-loop algorithm improves the insertion loss from 8.8 to 3.24 dB. The widest bandwidth designs produced using our fab-in-the-loop algorithm can cover a 150 nm bandwidth with less than 10.2 dB of loss at their lowest point.

preprint2022arXiv

Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators

An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_πL$'s below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_πL$'s of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO$_2$ as a carrier-barrier to enhance the polling efficiency of our electro-optic polymers. Additionally, finite-difference time-domain simulations are employed to optimize the effect of the thin layer of TiO$_2$. As compared to other, non-optimized, cases, our peak measured current is reduced by a factor of 3; scanning electron microscopy images also demonstrate that we achieve almost perfect infiltration. The anticipated increase in total capacitance due to the TiO$_2$ layer is shown to be negligible. In fact, applying our TiO$_2$ surface treatment to our ultra-narrow slot, allows us to obtain an improved phase shift efficiency ($\partial n / \partial V$) of $\sim$94% for a 10 nm TiO$_2$ layer.

preprint2021arXiv

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.