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Lukas Chrostowski

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Published work

10 published item(s)

preprint2026arXiv

Neuromorphic Photonic Computing with an Electro-Optic Analog Memory

In neuromorphic photonic systems, device operations are typically governed by analog signals, necessitating digital-to-analog converters (DAC) and analog-to-digital converters (ADC). However, data movement between memory and these converters in conventional von Neumann architectures incur significant energy costs. We propose an analog electronic memory co-located with photonic computing units to eliminate repeated long-distance data movement. Here, we demonstrate a monolithically integrated neuromorphic photonic circuit with on-chip capacitive analog memory and evaluate its performance in machine learning for in situ training and inference using the MNIST dataset. Our analysis shows that integrating analog memory into a neuromorphic photonic architecture can achieve over 26x power savings compared to conventional SRAM-DAC architectures. Furthermore, maintaining a minimum analog memory retention-to-network-latency ratio of 100 maintains >90% inference accuracy, enabling leaky analog memories without substantial performance degradation. This approach reduces reliance on DACs, minimizes data movement, and offers a scalable pathway toward energy-efficient, high-speed neuromorphic photonic computing.

preprint2024arXiv

Packaged Cryogenic Photon Pair Source Using an Effective Packaging Methodology for Cryogenic Integrated Optics

A new cryogenic packaging methodology that is widely applicable to packaging any integrated photonics circuit for operation at both room temperature and cryogenic temperature is reported. The method requires only equipment and techniques available in any integrated optics lab and works on standard integrated photonic chips. Our methodology is then used to enable the measurement of a single photon pair sourced based on a silicon ring resonator at cryogenic temperatures. When operating at 5.9 K, this source is measured to have a peak pair generation rate 183 times greater then at room temperature in the CL-band.

preprint2024arXiv

Reinforcement Learning for Photonic Component Design

We present a new fab-in-the-loop reinforcement learning algorithm for the design of nano-photonic components that accounts for the imperfections present in nanofabrication processes. As a demonstration of the potential of this technique, we apply it to the design of photonic crystal grating couplers fabricated on an air clad 220 nm silicon on insulator single etch platform. This fab-in-the-loop algorithm improves the insertion loss from 8.8 to 3.24 dB. The widest bandwidth designs produced using our fab-in-the-loop algorithm can cover a 150 nm bandwidth with less than 10.2 dB of loss at their lowest point.

preprint2022arXiv

Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators

An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_πL$'s below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_πL$'s of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO$_2$ as a carrier-barrier to enhance the polling efficiency of our electro-optic polymers. Additionally, finite-difference time-domain simulations are employed to optimize the effect of the thin layer of TiO$_2$. As compared to other, non-optimized, cases, our peak measured current is reduced by a factor of 3; scanning electron microscopy images also demonstrate that we achieve almost perfect infiltration. The anticipated increase in total capacitance due to the TiO$_2$ layer is shown to be negligible. In fact, applying our TiO$_2$ surface treatment to our ultra-narrow slot, allows us to obtain an improved phase shift efficiency ($\partial n / \partial V$) of $\sim$94% for a 10 nm TiO$_2$ layer.

preprint2021arXiv

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs.

preprint2016arXiv

Significant crosstalk reduction using all-dielectric CMOS-compatible metamaterials

A recent computational result suggests that highly confined modes can be realized by all-dielectric metamaterials (S. Jahani et. al., Optica 1, 96 (2014)). This substantially decreases crosstalk between dielectric waveguides, paving the way for high-density photonic circuits. Here, we experimentally demonstrate, on a standard silicon-on-insulator (SOI) platform, that using a simple metamaterial between two silicon strip waveguides results in about a 10-fold increase in coupling length. The proposed structure may lead to significant reduction in the size of devices in silicon photonics.

preprint2016arXiv

Stress engineering with silicon nitride stressors for Ge-on-Si lasers

Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency ηwp of Ge-on-Si lasers. Side stressors only turned out to be a more efficient way to increase ηwp than using top and side stressors together. With the side stressors only and geometry optimizations, a ηwp of 30.5% and an Ith of 50 mA (Jth of 37 kA/cm2) can be achieved with the defect limited carrier lifetime of 1 nsec. With the defect limited carrier lifetime of 10 nsec, an Ith of 7.8 mA (Jth of 5.8 kA/cm2) and a wall-plug efficiency of 38.7% can be achieved. These are tremendous improvements from the case without any stressors. These results give strong support to the Ge-on-Si laser technology and provide an effective way to improve the Ge laser performance.

preprint2015arXiv

Design Considerations of Biaxially Tensile-Strained Germanium-on-Silicon Lasers

Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design parameters of a Fabry-Perot Ge laser, such as the cavity length, thickness, width, polycrystalline Si cladding layer thickness were studied and optimized. The laser structure optimizations alone were shown to reduce Ith by 22-fold and increase the differential efficiency by 11 times. The simulations also showed that improving the defect limited carrier lifetime is critical for achieving an efficient and low-threshold Ge laser. With the optimized structure design (300 micron for the cavity length, 0.4 micron for the cavity width, 0.3 micron for the cavity thickness, and 0.6 micron for the polycrystalline Si cladding layer thickness) and a defect limited carrier lifetime of 100 ns, a wall-plug efficiency of 14.6% at 1mW output is predicted, where Jth of 2.8 kA/cm2, Ith of 3.3 mA, I_1mA of 9 mA, and differential efficiency of 23.6% can also be achieved. These are tremendous improvements from the available experimental values at 280 kA/cm2, 756 mA, 837 mA and 1.9%, respectively.

preprint2015arXiv

Wavelength tuning and stabilization of microring-based filters using silicon in-resonator photoconductive heaters

We demonstrate that n-doped resistive heaters in silicon waveguides show photoconductive effects with high responsivities. These photoconductive heaters, integrated into microring resonator (MRR)-based filters, were used to automatically tune and stabilize the filter's resonance wavelength to the input laser's wavelength. This is achieved without requiring dedicated defect implantations, additional material depositions, dedicated photodetectors, or optical power tap-outs. Automatic wavelength stabilization of first-order MRR and second-order series-coupled MRR filters is experimentally demonstrated. Open eye diagrams were obtained for data transmission at 12.5 Gb/s while the temperature was varied by 5 C at a rate of 0.28 C/s. We theoretically show that series-coupled MRR-based filters of any order can be automatically tuned by using photoconductive heaters to monitor the light intensity in each MRR, and sequentially aligning the resonance of each MRR to the laser's wavelength.