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Guangrui Xia

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physics.optics cond-mat.mtrl-sci

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preprint2016arXiv

Stress engineering with silicon nitride stressors for Ge-on-Si lasers

Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency ηwp of Ge-on-Si lasers. Side stressors only turned out to be a more efficient way to increase ηwp than using top and side stressors together. With the side stressors only and geometry optimizations, a ηwp of 30.5% and an Ith of 50 mA (Jth of 37 kA/cm2) can be achieved with the defect limited carrier lifetime of 1 nsec. With the defect limited carrier lifetime of 10 nsec, an Ith of 7.8 mA (Jth of 5.8 kA/cm2) and a wall-plug efficiency of 38.7% can be achieved. These are tremendous improvements from the case without any stressors. These results give strong support to the Ge-on-Si laser technology and provide an effective way to improve the Ge laser performance.

preprint2016arXiv

Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation

We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength. The results revealed that ARPRS with 442 nm excitation can provide unambiguous, convenient, non-destructive and fast determination of BP's crystallographic orientation. The substrate and thickness dependencies of Raman spectra and Raman tensor elements were studied. These dependencies were shown to be influenced by Raman excitation laser heating effect. By comparing with in-situ Raman measurements at elevated temperatures, we were able to quantify the laser-heating effect, which is significant and hard to avoid for Raman measurements of BP on polyimide substrates due to the poor thermal conductivity of the substrate. Thermal processing by substrate heating was shown to have a significant impact on BP on SiO2/Si substrate, but not for BP on polyimide due to smaller thermal expansion mismatch. Our results give important insights on Raman Spectroscopy characterizations of BP on different substrates.

preprint2015arXiv

Design Considerations of Biaxially Tensile-Strained Germanium-on-Silicon Lasers

Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design parameters of a Fabry-Perot Ge laser, such as the cavity length, thickness, width, polycrystalline Si cladding layer thickness were studied and optimized. The laser structure optimizations alone were shown to reduce Ith by 22-fold and increase the differential efficiency by 11 times. The simulations also showed that improving the defect limited carrier lifetime is critical for achieving an efficient and low-threshold Ge laser. With the optimized structure design (300 micron for the cavity length, 0.4 micron for the cavity width, 0.3 micron for the cavity thickness, and 0.6 micron for the polycrystalline Si cladding layer thickness) and a defect limited carrier lifetime of 100 ns, a wall-plug efficiency of 14.6% at 1mW output is predicted, where Jth of 2.8 kA/cm2, Ith of 3.3 mA, I_1mA of 9 mA, and differential efficiency of 23.6% can also be achieved. These are tremendous improvements from the available experimental values at 280 kA/cm2, 756 mA, 837 mA and 1.9%, respectively.