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Liuqi Yu

Liuqi Yu contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Probing hundreds of individual quantum defects in polycrystalline and amorphous alumina

Quantum two-level systems (TLSs) are present in the materials of qubits and are considered defects because they limit qubit coherence. For superconducting qubits, the quintessential Josephson junction barrier is made of amorphous alumina, which hosts TLSs. However, TLSs are not understood generally -- either structurally or in atomic composition. In this study, we greatly extend the quantitative data available on TLSs by reporting on the physical dipole moment in two alumina types: polycrystalline $\mathrm{\mathrm{γ-Al}_{2}\mathrm{O}_{3}}$ and amorphous $\mathrm{a-Al}\mathrm{O_{x}}$. To obtain the dipole moments $p_z$, rather from the less-structural coupling parameter g, we tune individual TLSs with an external electric field to extract the $p_z$ of the TLSs in a cavity QED system. We find a clear difference in the dipole moment distribution from the film types, indicating a difference in TLS structures. A large sample of approximately 400 individual TLSs are analyzed from the polycrystalline film type. Their dipoles along the growth direction $p_z$ have a mean value of 2.6$\pm$0.3 Debye (D) and standard deviation $σ$ = 1.6$\pm$0.2 D . The material distribution fits well to a single Gaussian function. Approximately 200 individual TLSs are analyzed from amorphous films. Both the mean $p_z$ =4.6$\pm$0.5 D and $σ$ =2.5$\pm$0.3 D are larger. Amorphous alumina also has some very large $p_z$, > 8.6 D, in contrast to polycrystalline which has none of this moment. These large moments agree only with oxygen-based TLS models. Based on data and the candidate models (delocalized O and hydrogen-based TLSs), we find polycrystalline alumina has smaller ratio of O-based to H-based TLS than amorphous alumina.

preprint2020arXiv

Machine learning enables completely automatic tuning of a quantum device faster than human experts

Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron transport features. We focused on gate-defined quantum dot devices, demonstrating fully automated tuning of two different devices to double quantum dot regimes in an up to eight-dimensional gate voltage space. We considered a parameter space defined by the maximum range of each gate voltage in these devices, demonstrating expected tuning in under 70 minutes. This performance exceeded a human benchmark, although we recognise that there is room for improvement in the performance of both humans and machines. Our approach is approximately 180 times faster than a pure random search of the parameter space, and it is readily applicable to different material systems and device architectures. With an efficient navigation of the gate voltage space we are able to give a quantitative measurement of device variability, from one device to another and after a thermal cycle of a device. This is a key demonstration of the use of machine learning techniques to explore and optimise the parameter space of quantum devices and overcome the challenge of device variability.

preprint2020arXiv

Robust Gapless Surface State against Surface Magnetic Impurities on (Bi$_{0.5}$Sb$_{0.5}$)$_2$Te$_3$ Evidenced by In Situ Magnetotransport Measurements

Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulator (TI) remains unresolved. We elucidate the effects of Cr impurities on epitaxial thin films of (Bi$_{0.5}$Sb$_{0.5}$)$_{2}$Te$_{3}$: Cr adatoms are incrementally deposited onto the TI held in ultrahigh vacuum at low temperatures, and \textit{in situ} magnetoconductivity and Hall effect measurements are performed at each increment with electrostatic gating. In the experimentally identified surface transport regime, the measured minimum electron density shows a non-monotonic evolution with the Cr density ($n_{\mathrm{Cr}}$): it first increases and then decreases with $n_{\mathrm{Cr}}$. This unusual behavior is ascribed to the dual roles of the Cr as ionized impurities and electron donors, having competing effects of enhancing and decreasing the electronic inhomogeneities in the surface state at low and high $n_{\mathrm{Cr}}$ respectively. The magnetoconductivity is obtained for different $n_{\mathrm{Cr}}$ on one and the same sample, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest $n_{\mathrm{Cr}}$, contrary to the expectation that the deposited Cr should break the time reversal symmetry and induce a gap opening at the Dirac point.