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Source author record

D. M. Zumbühl

D. M. Zumbühl appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.dis-nnMachine Learningphysics.app-phphysics.ins-det

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Published work

17 published item(s)

preprint2021arXiv

Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch

A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast quantum gates. Strikingly, for hole spins in one-dimensional germanium and silicon devices, the spin-orbit interaction has been predicted to be exceptionally strong yet highly tunable with gate voltages. Such electrical control would make it possible to switch on demand between qubit idling and manipulation modes. Here, we demonstrate ultrafast and universal quantum control of a hole spin qubit in a germanium/silicon core/shell nanowire, with Rabi frequencies of several hundreds of megahertz, corresponding to spin-flipping times as short as ~1 ns - a new record for a single-spin qubit. Next, we show a large degree of electrical control over the Rabi frequency, Zeeman energy, and coherence time - thus implementing a switch toggling from a rapid qubit manipulation mode to a more coherent idling mode. We identify an exceptionally strong but gate-tunable spin-orbit interaction as the underlying mechanism, with a short associated spin-orbit length that can be tuned over a large range down to 3 nm for holes of heavy-hole mass. Our work demonstrates a spin-orbit qubit switch and establishes hole spin qubits defined in one-dimensional germanium/silicon nanostructures as a fast and highly tunable platform for quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Edge State Wave Functions from Momentum-Conserving Tunneling Spectroscopy

We perform momentum-conserving tunneling spectroscopy using a GaAs cleaved-edge overgrowth quantum wire to investigate adjacent quantum Hall edge states. We use the lowest five wire modes with their distinct wave functions to probe each edge state and apply magnetic fields to modify the wave functions and their overlap. This reveals an intricate and rich tunneling conductance fan structure which is succinctly different for each of the wire modes. We self-consistently solve the Poisson-Schrödinger equations to simulate the spectroscopy, reproducing the striking fans in great detail, thus confirming the calculations. Further, the model predicts hybridization between wire states and Landau levels, which is also confirmed experimentally. This establishes momentum-conserving tunneling spectroscopy as a powerful technique to probe edge state wave functions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Machine learning enables completely automatic tuning of a quantum device faster than human experts

Device variability is a bottleneck for the scalability of semiconductor quantum devices. Increasing device control comes at the cost of a large parameter space that has to be explored in order to find the optimal operating conditions. We demonstrate a statistical tuning algorithm that navigates this entire parameter space, using just a few modelling assumptions, in the search for specific electron transport features. We focused on gate-defined quantum dot devices, demonstrating fully automated tuning of two different devices to double quantum dot regimes in an up to eight-dimensional gate voltage space. We considered a parameter space defined by the maximum range of each gate voltage in these devices, demonstrating expected tuning in under 70 minutes. This performance exceeded a human benchmark, although we recognise that there is room for improvement in the performance of both humans and machines. Our approach is approximately 180 times faster than a pure random search of the parameter space, and it is readily applicable to different material systems and device architectures. With an efficient navigation of the gate voltage space we are able to give a quantitative measurement of device variability, from one device to another and after a thermal cycle of a device. This is a key demonstration of the use of machine learning techniques to explore and optimise the parameter space of quantum devices and overcome the challenge of device variability.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Progress in cooling nanoelectronic devices to ultra-low temperatures

Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the lowest reported on-chip electron temperature having remained around 4 mK for more than 15 years. This is despite the fact that microkelvin temperatures have been accessible in bulk materials since the mid 20th century. In this review we describe progress made in the last five years using new cooling techniques. Developments have been driven by improvements in the understanding of nanoscale physics, material properties and heat flow in electronic devices at ultralow temperatures, and have involved collaboration between universities and institutes, physicists and engineers. We hope that this review will serve as a summary of the current state-of-the-art, and provide a roadmap for future developments. We focus on techniques that have shown, in experiment, the potential to reach sub-millikelvin electron temperatures. In particular, we focus on on-chip demagnetisation refrigeration. Multiple groups have used this technique to reach temperatures around 1 mK, with a current lowest temperature below 0.5 mK.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier

Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots

The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We experimentally determine the strength of spin-orbit interaction of hole spins confined to a double quantum dot in a Ge/Si nanowire by measuring spin-mixing transitions inside a regime of spin-blockaded transport. We find a remarkably short spin-orbit length of $\sim$65 nm, comparable to the quantum dot length and the interdot distance. We additionally observe a large orbital effect of the applied magnetic field on the hole states, resulting in a large magnetic field dependence of the spin-mixing transition energies. Strikingly, together with these orbital effects, the strong spin-orbit interaction causes a significant enhancement of the $g$-factor with magnetic field.The large spin-orbit interaction strength demonstrated is consistent with the predicted direct Rashba spin-orbit interaction in this material system and is expected to enable ultrafast Rabi oscillations of spin qubits and efficient qubit-qubit interactions, as well as provide a platform suitable for studying Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunnel-Junction Thermometry Down to Millikelvin Temperatures

We present a simple on-chip electronic thermometer with the potential to operate down to 1 mK. It is based on transport through a single normal-metal - superconductor tunnel junction with rapidly widening leads. The current through the junction is determined by the temperature of the normal electrode that is efficiently thermalized to the phonon bath, and it is virtually insensitive to the temperature of the superconductor, even when the latter is relatively far from equilibrium. We demonstrate here the operation of the device down to 7 mK and present a systematic thermal analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrical spin protection and manipulation via gate-locked spin-orbit fields

The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated. Quantum computation and spintronics devices such as the paradigmatic spin transistor could vastly benefit if such spin protection could be expanded from a single point into a broad range accessible with in-situ gate-control, making possible tunable SO rotations under protection from relaxation. Here, we demonstrate broad, independent control of all relevant SO fields in GaAs quantum wells, allowing us to tune the Rashba and Dresselhaus SO fields while keeping both locked to each other using gate voltages. Thus, we can electrically control and simultaneously protect the spin. Our experiments employ quantum interference corrections to electrical conductivity as a sensitive probe of SO coupling. Finally, we combine transport data with numerical SO simulations to precisely quantify all SO terms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Silver-Epoxy Microwave Filters and Thermalizers for Millikelvin Experiments

We present Silver-epoxy filters combining excellent microwave attenuation with efficient wire thermalization, suitable for low temperature quantum transport experiments. Upon minimizing parasitic capacitances, the attenuation reaches >100 dB above ~150 MHz and - when capacitors are added - already above ~30 MHz. We measure the device electron temperature with a GaAs quantum dot and demonstrate excellent filter performance. Upon improving the sample holder and adding a second filtering stage, we obtain electron temperatures as low as 7.5 +/- 0.2 mK in metallic Coulomb blockade thermometers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Evidence for Helical Nuclear Spin Order in GaAs Quantum Wires

We present transport measurements of cleaved edge overgrowth GaAs quantum wires. The conductance of the first mode reaches 2 e^2/h at high temperatures T > 10 K, as expected. As T is lowered, the conductance is gradually reduced to 1 e^2/h, becoming T-independent at T < 0.1 K, while the device cools far below 0.1 K. This behavior is seen in several wires, is independent of density, and not altered by moderate magnetic fields B. The conductance reduction by a factor of two suggests lifting of the electron spin degeneracy in absence of B. Our results are consistent with theoretical predictions for helical nuclear magnetism in the Luttinger liquid regime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transport spectroscopy of disordered graphene quantum dots etched into a single graphene flake

We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and addition energies increase with decreasing dot size, as expected, and display a strong correlation, suggesting the same physical origin for both, i.e. disorder-induced localization in presence of a small confinement gap. Gate capacitance measurements indicate that the dot charges are located in the narrow device region as intended. A dominant role of disorder is further substantiated by the gate dependence and the magnetic field behavior, allowing only approximate identification of the electron-hole crossover and spin filling sequences. Finally, we extract a g-factor consistent with g=2 within the error bars.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Breakdown of the Korringa Law of Nuclear Spin Relaxation in Metallic GaAs

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1 ~ T^0.6 for 0.1 K < T < 10 K. Further, we investigate nuclear spin inhomogeneities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The Nuclear Spin Environment in Lateral GaAs Spin Valves

The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the inherent nuclear spin system. Hanle satellites are used to determine the nuclear spin relaxation rates for the previously unexplored temperature range down to 100 mK, giving T1 times as long as 3 hours. Despite metallic temperature dependence of resistivity, the observed relaxation rates show a sub-linear temperature dependence. This contrasts the Korringa relaxation mechanism observed in metals but is not inconsistent with hyperfine-mediated relaxation in a disordered, interacting conductor not far from the metal-insulator transition. We discuss possible relaxation mechanisms and further investigate inhomogeneities in the nuclear spin polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Method for Cooling Nanostructures to Microkelvin Temperatures

We propose a new scheme aimed at cooling nanostructures to microkelvin temperatures, based on the well established technique of adiabatic nuclear demagnetization: we attach each device measurement lead to an individual nuclear refrigerator, allowing efficient thermal contact to a microkelvin bath. On a prototype consisting of a parallel network of nuclear refrigerators, temperatures of $\sim 1\,$mK simultaneously on ten measurement leads have been reached upon demagnetization, thus completing the first steps toward ultracold nanostructures.

0 citations0 reviewsNo code linkedOpen access