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Researcher profile

Lei Tang

Lei Tang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.opticsquant-phcond-mat.mes-hall

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Published work

11 published item(s)

preprint2021arXiv

Nonreciprocal single-photon band structure

We study single-photon band structure in a one-dimensional (1D) coupled-resonator optical waveguide (CROW) which chirally couples to an array of two-level quantum emitters (QEs). The chiral interaction between the resonator mode and the QE can break the time-reversal symmetry without the magneto-optical effect. As a result, a nonreciprocal single-photon edge state, band gap and flat band appear. By using such a chiral QE-CROW system, including a finite number of unit cells and working in the nonreciprocal band gap, we achieve frequency-multiplex single-photon circulators with high fidelity and low insertion loss. The chiral QE-light interaction can also protect one-way propagation of single photons against backscattering. Our work opens a new door for studying nonreciprocal photonic band structure and exploring its applications in the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Squeezing Induced Optical Nonreciprocity

We propose an all-optical approach to achieve optical nonreciprocity on a chip by quantum squeezing one of two coupled resonator modes. By parametric pumping a nonlinear resonator unidirectionally with a classical coherent field, we squeeze the resonator mode in a selective direction due to the phase-matching condition, and induce a chiral photon interaction between two resonators. Based on this chiral interresonator coupling, we achieve an all-optical diode and a three-port quasi-circulator. By applying a second squeezed-vacuum field to the squeezed resonator mode, our nonreciprocal device also works for single-photon pulses. We obtain an isolation ratio of >40 dB for the diode and fidelity of $>98\%$ for the quasi-circulator, and insertion loss of <1 dB for both. We also show that nonreciprocal transmission of strong light can be switched on and off by a relative weak pump light. This achievement implies a nonreciprocal optical transistor. Our protocol opens up a new route to achieve integrable all-optical nonreciprocal devices permitting chip-compatible optical isolation and nonreciporcal quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Spatial Structure Engineering in Enhancing Performance of Mosaic Electrocatalysts

Understanding the mechanism and developing strategies toward efficient electrocatalysis at gas-liquidsolid interfaces are important yet challenging. In the past decades, researchers have devoted many efforts to improving catalyst activity by modulating electronic properties of catalysts in terms of chemical components and physical features. Here we develop a mosaic catalyst strategy to improve activity of electrocatalysts by engineering their spatial structures. Taking Pt catalyst as an example, the mosaic Pt leads to high catalytic performance, showing a specific activity 11 times higher than uniform Pt films for hydrogen evolution reaction (HER), as well as higher current densities than commercial Pt/C and uniform Pt films. Such a strategy is found to be general to other catalysts (e.g., twodimensional PtS) and other reactions (e.g., oxygen evolution reaction). The improved catalytic performance of the mosaic catalysts is attributed to enhanced mass transferability and local electric field, both are determined by the occupation ratio of catalysts. Our work shines new light on manipulating electrocatalysis from the perspective of the spatial structure of catalyst, which would guide the design of efficient catalysts for heterogeneous reactions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropic thermal conductivity tensor measurements using beam-offset frequency domain thermoreflectance (BO-FDTR) for materials lacking in-plane symmetry

Many materials have anisotropic thermal conductivity, with diverse applications such as transistors, thermoelectrics, and laser gain media. Yet measuring the thermal conductivity tensor of such materials remains a challenge, particularly for materials lacking in-plane symmetry (i.e., transversely anisotropic materials). This paper demonstrates thermal conductivity tensor measurements for transversely anisotropic materials, by extending beam-offset frequency-domain thermoreflectance (BO-FDTR) methods which had previously been limited to transversely isotropic materials. Extensive sensitivity analysis is used to determine an appropriate range of heating frequencies and beam offsets to extract various tensor elements. The new technique is demonstrated on a model transversely anisotropic material, x-cut quartz (<110> α-SiO2), by combining beam offset measurements from different sample orientations to reconstruct the full in-plane thermal conductivity tensor. The technique is also validated by measurements on two transversely isotropic materials, sapphire and highly oriented pyrolytic graphite (HOPG). The anisotropic measurements demonstrated very good self-consistency in correctly identifying isotropic directions when present, with residual anisotropy errors below 4% for sapphire and 2% for HOPG and quartz. Finally, a computational case study (simulated experiment) shows how the arbitrary in-plane thermal conductivity tensor of a fictitious material with high in-plane anisotropy can in principle be obtained from only a single sample orientation, rather than multiple orientations like the experiments on x-cut quartz.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties

Black phosphorus (BP) has recently attracted significant interest due to its unique electronic and optical properties. Doping is an effective strategy to tune a material&#39;s electronic structures, however, the direct and controllable growth of BP with a high yield and its doping remain a great challenge. Here we report an efficient short-distance transport (SDT) growth approach and achieve the controlled growth of high quality BP with the highest yield so far, where 98% of the red phosphorus is converted to BP. The doping of BP by As, Sb, Bi, Se and Te are also achieved by this SDT growth approach. Spectroscopic results show that doping systematically changes its electronic structures including band gap, work function, and energy band position. As a result, we have found that the air-stability of doped BP samples (Sb and Te-doped BP) improves compared with pristine BP, due to the downshift of the conduction band minimum with doping. This work develops a new method to grow BP and doped BP with tunable electronic structures and improved stability, and should extend the uses of these class of materials in various areas.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-Entropy Oxides Based on Valence Combinations: Design and Practice

High-entropy oxides (HEOs) are a new class of materials that are promising for a wide range of applications. Designing HEOs needs to consider both geometric compatibility and electrical equilibrium. However, there is currently no available method to systematically consider these two factors when selecting constituent materials for making HEOs. Here we propose a two-step strategy, where a HEO system to be explored is first partitioned into multiple subsystems based on the valence combinations of substituted cations; the geometric compatibility is then considered in selecting suitable substituted cations. We demonstrate this strategy by using A(5B0.2)O3 perovskite as a model system. We show that the system can be partitioned into 12 subsystems. Ten of the subsystems have formed a single-phase cubic perovskite, while two have partially ordering structure. The formation of single phases is correlated to Goldschmidt&#39;s tolerance factor, while the formation of the ordering structure is mainly correlated to cation-valence difference. We anticipate that this strategy is applicable to exploring HEOs in other systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Near-field radiative heat transfer between dissimilar materials mediated by coupled surface phonon- and plasmon-polaritons

Near-field radiative heat transfer (NFRHT) between dissimilar materials supporting surface polaritons in the infrared is of critical importance for applications such as photonic thermal rectification and near-field thermophotovoltaics. Here, we measure NFRHT between millimetersize surfaces made of 6H-SiC and doped Si, respectively supporting surface phonon-polaritons (SPhPs) and surface plasmon-polaritons (SPPs) in the infrared, separated by a 150-nm-thick vacuum gap spacing maintained via SiO2 nanopillars. For purpose of comparison, measurements are also performed between two doped Si surfaces. The measured radiative flux is in good agreement with theoretical predictions based on fluctuational electrodynamics. A flux enhancement beyond the blackbody limit of ~ 8.2 is obtained for the SiC-Si sample, which is smaller than the enhancement for the Si-Si sample (~ 12.5) owing to the spectral mismatch of the SiC and Si light lines, and SPhP and SPP resonances. However, due to lower losses in SiC than Si and weaker SPhP-SPP coupling than SPP coupling, the near-field enhancement for the SiC-Si sample exhibits a more pronounced monochromatic behavior with a resonant flux that is ~ 5 times larger than the resonant flux for the Si-Si sample. This work demonstrates that it is possible to modulate NFRHT via surface polariton coupling, and will accelerate the development of energy conversion and thermal management devices capitalizing on the near-field effects of thermal radiation between dissimilar materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis of ultrahigh-quality monolayer molybdenum disulfide through in-situ defect healing with thiol molecules

Monolayer transition metal dichalcogenides (TMDCs) are two-dimensional (2D) materials with many potential applications. Chemical vapour deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors&#39; distribution and concentration during growth where solid precursors are used. Here, we propose to use thiol as a liquid precursor for CVD growth of high quality and uniform 2D MoS2. Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS2 grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2. Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS2 and repair these defects during the growth of MoS2, resulting in high quality MoS2. This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unsaturated Single Atoms on Monolayer Transition Metal Dichalcogenides for Ultrafast Hydrogen Evolution

Large scale implementation of electrochemical water splitting for hydrogen evolution requires cheap and efficient catalysts to replace expensive platinum. Molybdenum disulfide is one of the most promising alternative catalysts but its intrinsic activity is still inferior to platinum. There is therefore a need to explore new active site origins in molybdenum disulfide with ultrafast reaction kinetics and to understand their mechanisms. Here, we report a universal cold hydrogen plasma reduction method for synthesizing different single atoms sitting on two-dimensional monolayers. In case of molybdenum disulfide, we design and identify a new type of active site, i.e., unsaturated Mo single atoms on cogenetic monolayer molybdenum disulfide. The catalyst shows exceptional intrinsic activity with a Tafel slope of 35.1 mV dec-1 and a turnover frequency of ~10^3 s-1 at 100 mV, based on single flake microcell measurements. Theoretical studies indicate that coordinately unsaturated Mo single atoms sitting on molybdenum disulfide increase the bond strength between adsorbed hydrogen atoms and the substrates through hybridization, leading to fast hydrogen adsorption/desorption kinetics and superior hydrogen evolution activity. This work shines fresh light on preparing highly-efficient electrocatalysts for water splitting and other electrochemical processes, as well as provides a general method to synthesize single atoms on two-dimensional monolayers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Vertical CVD Growth of Highly Uniform Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially non-uniform growth dynamics, it is challenging to grow wafer-scale 2D TMDCs with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design to grow monolayer TMDCs with a uniform density and high quality over the whole wafer, and with excellent reproducibility. The use of such VCVD design can easily control the three key growth parameters of precursor concentration, gas flow and temperature, which cannot be done in currently widely-used horizontal CVD system. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by the one-step transfer of VCVD-grown TMDC samples, owning to its good uniformity. This work opens a way to grow 2D materials with high uniformity and reproducibility on the wafer scale, which can be used for the scalable fabrication of 2D materials and their heterostructures.

0 citations0 reviewsNo code linkedOpen access