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Faxian Xiu

Faxian Xiu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.opticscond-mat.supr-concond-mat.stat-mechcond-mat.str-el

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Published work

21 published item(s)

preprint2022arXiv

Ellipticity control of terahertz high-harmonic generation in a Dirac semimetal

We report on terahertz high-harmonic generation in a Dirac semimetal as a function of the driving-pulse ellipticity and on a theoretical study of the field-driven intraband kinetics of massless Dirac fermions.Very efficient control of third-harmonic yield and polarization state is achieved in electron-doped Cd$_3$As$_2$ thin films at room temperature. The observed tunability is understood as resulting from terahertz-field driven intraband kinetics of the Dirac fermions. Our study paves the way for exploiting nonlinear optical properties of Dirac matter for applications in signal processing and optical communications.

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preprint2022arXiv

Semiconductor-like photocarrier dynamics in Dirac Semimetal Cd3As2 film Probed with transient Terahertz Spectroscopy

The topological three-dimensional Dirac semimetal Cd3As2 has drawn great attention for the novel physics and promising applications in optoelectronic devices operating in the infrared and THz regimes. Among the extensive studies in the past decades, one intriguing debate is the underlined mechanism that governing the nonequilibrium carrier dynamics following photoexcitation. In this study, the temperature dependent photocarrier dynamics in Cd3As2 film has been investigated with time-resolved terahertz spectroscopy. The experimental results demonstrate that photoexcitation results in abrupt increase in THz photoconductivity, and the subsequent relaxation shows a single exponential relaxation for various temperatures and pump fluences. The relaxation time increase from 4.7 ps at 5 K to 7.5 ps at 220 K, while the lifetime remains almost constant of ~7.5 ps with temperature above 220 K. A Rothwarf-Taylor model was employed to fit the temperature dependent relaxation time, and a narrow energy gap of ~35 meV is obtained, which occurs around the Dirac node. Our THz spectroscopy results demonstrate that the photocarrier relaxation in Cd3As2 shows a semiconductor-like behavior, rather than hot carrier scatterings in graphene and most of metals.

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preprint2022arXiv

Ultrafast photothermoelectric effect in Dirac semimetallic Cd3As2 revealed by terahertz emission

The thermoelectric effects of topological semimetals have attracted tremendous research interest because many topological semimetals are excellent thermoelectric materials and thermoelectricity serves as one of their most important potential applications. In this work, we reveal the transient photothermoelectric response of Dirac semimetallic Cd3As2, namely the photo-Seebeck effect and photo-Nernst effect, by studying the terahertz (THz) emission from the transient photocurrent induced by these effects. Our excitation polarization and power dependence confirm that the observed THz emission is due to photothermoelectric effect instead of other nonlinear optical effect. Furthermore, when a weak magnetic field (~0.4 T) is applied, the response clearly indicates an order of magnitude enhancement on transient photothermoelectric current generation compared to the photo-Seebeck effect. Such enhancement supports an ambipolar transport nature of the photo-Nernst current generation in Cd3As2. These results highlight the enhancement of thermoelectric performance can be achieved in topological Dirac semimetals based on the Nernst effect, and our transient studies pave the way for thermoelectric devices applicable for high field circumstance when nonequilibrium state matters. The large THz emission due to highly efficient photothermoelectric conversion is comparable to conventional semiconductors through optical rectification and photo-Dember effect.

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preprint2021arXiv

Plasmons in the van der Waals charge-density-wave material 2H-TaSe2

Plasmons in two-dimensional (2D) materials beyond graphene have recently gained much attention. However, the experimental investigation is limited due to the lack of suitable materials. Here, we experimentally demonstrate localized plasmons in a correlated 2D charge-density-wave (CDW) material: 2H-TaSe2. The plasmon resonance can cover a broad spectral range from the terahertz (40 μm) to the telecom (1.55 μm) region, which is further tunable by changing thickness and dielectric environments. The plasmon dispersion flattens at large wave vectors, resulted from the universal screening effect of interband transitions. More interestingly, anomalous temperature dependence of plasmon resonances associated with CDW excitations is observed. In the CDW phase, the plasmon peak close to the CDW excitation frequency becomes wider and asymmetric, mimicking two coupled oscillators. Our study not only reveals the universal role of the intrinsic screening on 2D plasmons, but also opens an avenue for tunable plasmons in 2D correlated materials.

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preprint2021arXiv

Van der Waals Ferromagnetic Josephson Junctions

Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and π phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures.

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preprint2020arXiv

Edge superconductivity in Multilayer WTe2 Josephson junction

WTe2, as a type-II Weyl semimetal, has 2D Fermi arcs on the (001) surface in the bulk and 1D helical edge states in its monolayer. These features have recently attracted wide attention in condensed matter physics. However, in the intermediate regime between the bulk and monolayer, the edge states have not been resolved owing to its closed band gap which makes the bulk states dominant. Here, we report the signatures of the edge superconductivity by superconducting quantum interference measurements in multilayer WTe2 Josephson junctions and we directly map the localized supercurrent. In thick WTe2 (~60 nm), the supercurrent is uniformly distributed by bulk states with symmetric Josephson effect ($\left|I_c^+(B)\right|=\left|I_c^-(B)\right|$). In thin WTe2 (10 nm), however, the supercurrent becomes confined to the edge and its width reaches up to 1.4 um and exhibits non-symmetric behavior $\left|I_c^+(B)\right|\neq \left|I_c^-(B)\right|$. The ability to tune the edge domination by changing thickness and the edge superconductivity establishes WTe2 as a promising topological system with exotic quantum phases and a rich physics.

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preprint2019arXiv

Non-perturbative high-harmonic generation in the three-dimensional Dirac semimetal Cd$_3$As$_2$

Harmonic generation is a general characteristic of driven nonlinear systems, and serves as an efficient tool for investigating the fundamental principles that govern the ultrafast nonlinear dynamics. In atomic gases, high-harmonic radiation is produced via a three-step process of ionization, acceleration, and recollision by strong-field infrared laser. This mechanism has been intensively investigated in the extreme ultraviolet and soft X-ray regions, forming the basis of attosecond research. In solid-state materials, which are characterized by crystalline symmetry and strong interactions, yielding of harmonics has just recently been reported. The observed high-harmonic generation was interpreted with fundamentally different mechanisms, such as interband tunneling combined with dynamical Bloch oscillations, intraband thermodynamics and nonlinear dynamics, and many-body electronic interactions. Here, in a distinctly different context of three-dimensional Dirac semimetal, we report on experimental observation of high-harmonic generation up to the seventh order driven by strong-field terahertz pulses. The observed non-perturbative high-harmonic generation is interpreted as a generic feature of terahertz-field driven nonlinear intraband kinetics of Dirac fermions. We anticipate that our results will trigger great interest in detection, manipulation, and coherent control of the nonlinear response in the vast family of three-dimensional Dirac and Weyl materials.

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preprint2016arXiv

A High-Performance Mid-infrared Optical Switch Enabled by Bulk Dirac Fermions in Cd3As2

Pulsed lasers operating in the 2-5 μm band are important for a wide range of applications in sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain media, the lack of a capable pulse generation mechanism, i.e. a passive optical switch, remains a significant technological challenge. Here we show that mid-infrared optical response of Dirac states in crystalline Cd3As2, a three-dimensional topological Dirac semimetal (TDS), constitutes an ideal ultrafast optical switching mechanism for the 2-5 μm range. Significantly, fundamental aspects of the photocarrier processes, such as relaxation time scales, are found to be flexibly controlled through element doping, a feature crucial for the development of convenient mid-infrared ultrafast sources. Although various exotic physical phenomena have been uncovered in three-dimensional TDS systems, our findings show for the first time that this emerging class of quantum materials can be harnessed to fill a long known gap in the field of photonics.

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preprint2016arXiv

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

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preprint2016arXiv

Enhanced Thermoelectric Properties of Dirac Semimetal Cd3As2

We report an investigation of temperature- and doping-dependent thermoelectric behaviors of topological semimetal Cd3As2. The electrical conductivity, thermal conductivity, Seebeck coefficient, and figure of merit (ZT) are calculated by using Boltzmann transport theory. The calculated thermoelectric properties of the pristine Cd3As2 match well the experimental results. The electron or hole doping, especially the latter, is found improving much the thermoelectric behaviors of the material. The optimum merit ZT of Cd3As2 with electron doping is found to be about 0.5 at T=700 K with n=1x1020 cm-3, much larger than the maximum experimental value obtained for the pristine Cd3As2 (~0.15). For the p-type Cd3As2, the maximal value of the Seebeck coefficient as a function of temperature increases apparently with the increase of the hole doping concentration and its position shifts drastically towards the lower temperature region compared to that of the n-type Cd3As2, leading to the optimum merit ZT of about 0.5 obtained at low temperature of 500K (p=1x1020 cm-3) in the p-type Cd3As2.

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preprint2016arXiv

Observation of quasi-two-dimensional Dirac fermions in ZrTe5

Since the discovery of graphene, layered materials have attracted extensive interests owing to their unique electronic and optical characteristics. Among them, Dirac semimetal, one of the most appealing categories, has been a long-sought objective in layered systems beyond graphene. Recently, layered pentatelluride ZrTe5 was found to host signatures of Dirac semimetal. However, the low Fermi level in ZrTe5 strongly hinders a comprehensive understanding of the whole picture of electronic states through photoemission measurements, especially in the conduction band. Here, we report the observation of Dirac fermions in ZrTe5 through magneto-optics and magneto-transport. By applying magnetic field, we observe a square-root-B dependence of inter-Landau-level resonance and Shubnikov-de Haas (SdH) oscillations with non-trivial Berry phase, both of which are hallmarks of Dirac fermions. The angular-dependent SdH oscillations show a clear quasi-two-dimensional feature with highly anisotropic Fermi surface and band topology, in stark contrast to the 3D Dirac semimetal such as Cd3As2. This is further confirmed by the angle-dependent Berry phase measurements and the observation of bulk quantum Hall plateaus. The unique band dispersion is theoretically understood: the system is at the critical point between a 3D Dirac semimetal and a topological insulator phase. With the confined interlayer dispersion and reducible dimensionality, our work establishes ZrTe5 as an ideal platform for exploring exotic physical phenomena of Dirac fermions.

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preprint2016arXiv

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

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preprint2016arXiv

Weak antilocalization in Cd3As2 thin films

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.

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preprint2015arXiv

Controllable Schottky Barriers between MoS2 and Permalloy

MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a considerable Schottky barrier exists between MoS2 and contact metal, hindering the further study of spin transport and spin injection in MoS2. Although substantial progress has been made in improving device performance, the existence of metal-semiconductor Schottky barrier has not yet been fully understood. Here, we investigate permalloy (Py) contacts to both multilayer and monolayer MoS2. Ohmic contact is developed between multilayer MoS2 and Py electrodes with a negative Schottky barrier, which yields a high field-effect mobility exceeding 55 cm2V-1s-1 at low temperature. Further, by applying back gate voltage and inserting different thickness of Al2O3 layer between the metal and monolayer MoS2, we have achieved a good tunability of the Schottky barrier height (down to zero). These results are important in improving the performance of MoS2 transistor devices; and it may pave the way to realize spin transport and spin injection in MoS2.

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preprint2015arXiv

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

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preprint2015arXiv

Landau level splitting in Cd3As2 under high magnetic fields

Three-dimensional topological Dirac semimetals (TDSs) are a new kind of Dirac materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional graphene. It has been proposed that TDSs can be driven to other exotic phases like Weyl semimetals, topological insulators and topological superconductors by breaking certain symmetries. Here we report the first transport experiment on Landau level splitting in TDS Cd3As2 single crystals under high magnetic fields, suggesting the removal of spin degeneracy by breaking time reversal symmetry. The detected Berry phase develops an evident angular dependence and possesses a crossover from nontrivial to trivial state under high magnetic fields, a strong hint for a fierce competition between the orbit-coupled field strength and the field-generated mass term. Our results unveil the important role of symmetry breaking in TDSs and further demonstrate a feasible path to generate a Weyl semimetal phase by breaking time reversal symmetry.

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preprint2015arXiv

Magnetotransport properties of Cd3As2 nanostructures

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.

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preprint2015arXiv

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.

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preprint2015arXiv

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

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preprint2014arXiv

Tunable charge-trap memory based on few-layer MoS2

Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their novel physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. More importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 104, far beyond Si-based flash memory, which allows for multi-bit information storage. Furthermore, the device shows a high mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable retention of ~28% charge loss after 10 years which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-\k charge-trap gate stacks opens up an exciting field of novel nonvolatile memory devices.

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preprint2011arXiv

Electrical spin injection and transport in Germanium

We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal magnetoresistance and the spin lifetime in n-type Ge is also investigated.

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