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Researcher profile

Simin Feng

Simin Feng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.optics

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Published work

6 published item(s)

preprint2020arXiv

Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties

Black phosphorus (BP) has recently attracted significant interest due to its unique electronic and optical properties. Doping is an effective strategy to tune a material's electronic structures, however, the direct and controllable growth of BP with a high yield and its doping remain a great challenge. Here we report an efficient short-distance transport (SDT) growth approach and achieve the controlled growth of high quality BP with the highest yield so far, where 98% of the red phosphorus is converted to BP. The doping of BP by As, Sb, Bi, Se and Te are also achieved by this SDT growth approach. Spectroscopic results show that doping systematically changes its electronic structures including band gap, work function, and energy band position. As a result, we have found that the air-stability of doped BP samples (Sb and Te-doped BP) improves compared with pristine BP, due to the downshift of the conduction band minimum with doping. This work develops a new method to grow BP and doped BP with tunable electronic structures and improved stability, and should extend the uses of these class of materials in various areas.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-Fidelity Transfer of 2D Bismuth Oxyselenide and its Mechanical Properties

Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) with high electron mobility is advantageous in future high-performance and flexible electronic and optoelectronic devices. However, transfer of thin Bi2O2Se flakes is rather challenging, restricting measurements of its mechanical properties and application exploration in flexible devices. Here, we develop a reliable and effective polydimethylsiloxane (PDMS)-mediated method that allows transferring thin Bi2O2Se flakes from grown substrates onto target substrates like micro-electro-mechanical system substrates. The high fidelity of the transferred thin flakes stems from the high adhesive energy and flexibility of PDMS film. For the first time, the mechanical properties of 2D Bi2O2Se are experimentally acquired with nanoindentation method. We found that few-layer Bi2O2Se exhibits a large intrinsic stiffness of 18-23 GPa among 2D semiconductors, and a Young' s modulus of 88.7 +- 14.4 GPa which is consistent with the theoretical values. Furthermore, few-layer Bi2O2Se can withstand a high radial strain of more than 3%, demonstrating excellent flexibility. The development of the reliable transfer method and documentation of mechanical properties of 2D Bi2O2Se jointly fill the gap between theoretical prediction and experimental verification of mechanical properties of this emerging material, and will promote flexible electronics and optoelectronics based on 2D Bi2O2Se.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis of ultrahigh-quality monolayer molybdenum disulfide through in-situ defect healing with thiol molecules

Monolayer transition metal dichalcogenides (TMDCs) are two-dimensional (2D) materials with many potential applications. Chemical vapour deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, we propose to use thiol as a liquid precursor for CVD growth of high quality and uniform 2D MoS2. Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS2 grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2. Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS2 and repair these defects during the growth of MoS2, resulting in high quality MoS2. This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Vertical CVD Growth of Highly Uniform Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially non-uniform growth dynamics, it is challenging to grow wafer-scale 2D TMDCs with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design to grow monolayer TMDCs with a uniform density and high quality over the whole wafer, and with excellent reproducibility. The use of such VCVD design can easily control the three key growth parameters of precursor concentration, gas flow and temperature, which cannot be done in currently widely-used horizontal CVD system. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by the one-step transfer of VCVD-grown TMDC samples, owning to its good uniformity. This work opens a way to grow 2D materials with high uniformity and reproducibility on the wafer scale, which can be used for the scalable fabrication of 2D materials and their heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Equivalent Theory and Retrieval of Effective Metamaterials Parameters

We apply the equivalent theory to orthorhombic anisotropic materials and provide a general unit-cell design criterion for achieving a length-independent retrieval of the effective material parameters from a single layer of unit cells. We introduce a graphical retrieval method and phase unwrapping techniques. The graphical method utilizes the linear regression technique. Our method can reduce the uncertainty of experimental measurements and the ambiguity of phase unwrapping. Moreover, the graphical method can simultaneously determine the bulk values of the six effective material parameters, permittivity and permeability tensors, from a single layer of unit cells.

0 citations0 reviewsNo code linkedOpen access