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Lars Tiemann

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Published work

8 published item(s)

preprint2022arXiv

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in non-local experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields. The superposition of a synthetic Hall potential and a conventional Hall voltage can annihilate the sample's transversal potential at large external magnetic fields. Surface acoustic waves thus provide a promising and facile avenue for the exploit of gauge fields in large planar graphene systems.

preprint2022arXiv

Comment on "Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene"

This comment pertains the recent manuscript by Morissette {\it et al.} [arXiv:2206.08354v1]. The authors claim to have found signatures of collective excitations in electron spin resonance experiments that would be linked to the correlated structure of magic angle bilayer graphene. However, identical resonance features have already been reported in previous works on mono- and few-layer graphene, voiding their theoretical framework. A straight forward theoretical picture within the single-particle topologically non-trivial band structure of graphene delivers satisfactory explanations for the observation of the resonant features and applies as well to the data presented by Morissette {\it et al.}. However, this intuitive picture has been disregarded by the authors.

preprint2022arXiv

Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are performed in the frequency range of 18-33GHz, which allows us to determine the g-factor in the system. We measure average g-factor of 1.91 for our hybrid system which is a considerable shift compared to what is observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.

preprint2022arXiv

Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene

The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor.

preprint2019arXiv

Acoustically driven Dirac electrons in monolayer graphene

We demonstrate the interaction between surface acoustic waves and Dirac electrons in monolayer graphene at low temperatures and high magnetic fields. A metallic interdigitated transducer launches surface waves that propagate through a conventional piezoelectric GaAs substrate and couple to large-scale monolayer CVD graphene films resting on its surface. Based on the induced acousto-electric current, we characterize the frequency domains of the transducer from its first to the third harmonic. We find an oscillatory attenuation of the SAW velocity depending on the conductivity of the graphene layer. The acousto-electric current reveals additional fine structure that is absent in pure magnetotransport. In addition we find a shift between the acousto-electric longitudinal voltage and the velocity change of the SAW. We attribute this shift to the periodic strain field from the propagating SAW that slightly modifies the Dirac cone.

preprint2016arXiv

Non-local polarization feedback in a fractional quantum Hall ferromagnet

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a $ν=2/3$ fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

preprint2016arXiv

Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.

preprint2012arXiv

Unraveling the spin polarization of the v = 5/2 fractional quantum Hall state

The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum operations. Yet, its microscopic origin remains unidentified, and candidate model wave functions include those with undesirable abelian statistics. Here we report direct measurements of the electron spin polarization of the v = 5/2 FQH state using resistively detected nuclear magnetic resonance (NMR). We find the system to be fully polarized, which unambiguously rules out the most-likely abelian contender and thus lends strong support for the v = 5/2 state being nonabelian. Our measurements reveal an intrinsically different nature of interaction in the first-excited Landau level underlying the physics at v = 5/2.