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Chithra H. Sharma

Chithra H. Sharma appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2022arXiv

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in non-local experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields. The superposition of a synthetic Hall potential and a conventional Hall voltage can annihilate the sample's transversal potential at large external magnetic fields. Surface acoustic waves thus provide a promising and facile avenue for the exploit of gauge fields in large planar graphene systems.

preprint2022arXiv

Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are performed in the frequency range of 18-33GHz, which allows us to determine the g-factor in the system. We measure average g-factor of 1.91 for our hybrid system which is a considerable shift compared to what is observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.

preprint2016arXiv

Split-gate point-contact for channelizing electron transport on MoS2/h-BN hybrid structures

Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of large-scale uniformity, flexibility and portability over the conventional bulk semiconductor heterostructures. In this letter we show the operation of a split-gate defined point contact device on a MoS2/h-BN heterostructure, a first step towards realizing electrostatically gated quantum circuits on van der Waals semiconductors. Our devices show signatures of channelized electron flow and a complete shutdown of transport similar to the conventional point contacts defined on bulk semiconductor heterostructures. We explore the role of back-gate and the drain-source voltages on the pinch-off characteristics and, we are able to tune the pinch-off characteristics by varying the back-gate voltage at temperatures ranging from 4K to 300 K.