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Researcher profile

Marta Prada

Marta Prada contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

5 published item(s)

preprint2022arXiv

Acoustically Induced Giant Synthetic Hall Voltages in Graphene

Any departure from graphene's flatness leads to the emergence of artificial gauge fields that act on the motion of the Dirac fermions through an associated pseudomagnetic field. Here, we demonstrate the tunability of strong gauge fields in non-local experiments using a large planar graphene sheet that conforms to the deformation of a piezoelectric layer by a surface acoustic wave. The acoustic wave induces a longitudinal and a giant synthetic Hall voltage in the absence of external magnetic fields. The superposition of a synthetic Hall potential and a conventional Hall voltage can annihilate the sample's transversal potential at large external magnetic fields. Surface acoustic waves thus provide a promising and facile avenue for the exploit of gauge fields in large planar graphene systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Comment on "Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene"

This comment pertains the recent manuscript by Morissette {\it et al.} [arXiv:2206.08354v1]. The authors claim to have found signatures of collective excitations in electron spin resonance experiments that would be linked to the correlated structure of magic angle bilayer graphene. However, identical resonance features have already been reported in previous works on mono- and few-layer graphene, voiding their theoretical framework. A straight forward theoretical picture within the single-particle topologically non-trivial band structure of graphene delivers satisfactory explanations for the observation of the resonant features and applies as well to the data presented by Morissette {\it et al.}. However, this intuitive picture has been disregarded by the authors.

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preprint2022arXiv

Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto transport measurements to study the electron spin resonance on a combined system of graphene and MoS2 at 1.5K. The electron spin resonance measurements are performed in the frequency range of 18-33GHz, which allows us to determine the g-factor in the system. We measure average g-factor of 1.91 for our hybrid system which is a considerable shift compared to what is observed in graphene on SiO2. This is a clear indication of proximity induced SOC in graphene in accordance with theoretical predictions.

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preprint2022arXiv

Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene

The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor.

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preprint2007arXiv

High precision quantum control of single donor spins in silicon

The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.

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