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Kyeong Tae Kang

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2016arXiv

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

preprint2014arXiv

Nature of Orbital and Spin Rashba Coupling in the Surface Bands of SrTiO3 and KTaO3

Tight-binding models for the recently observed surface electronic bands of SrTiO3 and KTaO3 are analyzed with a view to bringing out the relevance of momentum-space chiral angular momentum structures of both orbital and spin origins. Depending on the strength of electric field associated with inversion symmetry breaking at the surface, the orbital and the accompanying spin angular momentum structures reveal complex linear and cubic dependencies in the momentum k (linear and cubic Rashba effects, respectively) in a band-specific manner. Analytical expressions for the cubic orbital and spin Rashba effects are derived by way of unitary transformation technique we developed, and compared to numerical calculations. Due to the C4v symmetry of the perovskite structure the cubic Rashba effect appears as in-plane modulations.

preprint2013arXiv

Soliton Defects in One-dimensional Topological Three-band Hamiltonian

Defect formation in the one-dimensional topological three-band model is examined within both lattice and continuum models. Classic results of Jackiw-Rebbi and Rice-Mele for the soliton charge is generalized to the three-band model. The presence of the central flat band in the three-band model makes the soliton charge as a function of energy behave in a qualitatively different way from the two-band Dirac model case. Quantum field-theoretical calculation of Goldstone and Wilczek is also generalized to the three-band model to obtain the soliton charge. Diamond-chain lattice is shown to be an ideal structure to host a topological three-band structure.