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Dongseok Suh

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Published work

2 published item(s)

preprint2021arXiv

Symmetry-Driven Spin-Wave Gap Modulation in Nanolayered SrRuO3/SrTiO3 Heterostructures: Implications for Spintronic Applications

A strong correlation between magnetic interaction and topological symmetries leads to unconventional magneto-transport behavior. Weyl fermions induce topologically protected spin-momentum locking, which is closely related to spin-wave gap formation in magnetic crystals. Ferromagnetic SrRuO3, regarded as a strong candidate for Weyl semimetal, inherently possesses a nonzero spin-wave gap owing to its strong magnetic anisotropy. In this paper, we propose a method to control the spin-wave dynamics by nanolayer designing of the SrRuO3/SrTiO3 superlattices. In particular, the six-unit-cell-thick SrRuO3 layers within the superlattices undergo a phase transition in crystalline symmetry from orthorhombic to tetragonal, as the thickness of the SrTiO3 layers is modulated with atomic-scale precision. Consequently, the magnetic anisotropy, anomalous Hall conductivity, and spin-wave gap could be systematically manipulated. Such customization of magnetic anisotropy via nanoscale heterostructuring offers a novel control knob to tailor the magnon excitation energy for future spintronic applications, including magnon waveguides and filters. Our nanolayer approach unveils the important correlation between the tunable lattice degrees of freedom and spin dynamics in topologically non-trivial magnetic materials.

preprint2016arXiv

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.