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Haeyong Kang

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Published work

3 published item(s)

preprint2021arXiv

Semantic Grouping Network for Video Captioning

This paper considers a video caption generating network referred to as Semantic Grouping Network (SGN) that attempts (1) to group video frames with discriminating word phrases of partially decoded caption and then (2) to decode those semantically aligned groups in predicting the next word. As consecutive frames are not likely to provide unique information, prior methods have focused on discarding or merging repetitive information based only on the input video. The SGN learns an algorithm to capture the most discriminating word phrases of the partially decoded caption and a mapping that associates each phrase to the relevant video frames - establishing this mapping allows semantically related frames to be clustered, which reduces redundancy. In contrast to the prior methods, the continuous feedback from decoded words enables the SGN to dynamically update the video representation that adapts to the partially decoded caption. Furthermore, a contrastive attention loss is proposed to facilitate accurate alignment between a word phrase and video frames without manual annotations. The SGN achieves state-of-the-art performances by outperforming runner-up methods by a margin of 2.1%p and 2.4%p in a CIDEr-D score on MSVD and MSR-VTT datasets, respectively. Extensive experiments demonstrate the effectiveness and interpretability of the SGN.

preprint2016arXiv

NMR Evidences for the coupling between conduction electrons and molecular degrees of freedom in the exotic member of the Bechgaard salt, (TMTSF)2FSO3

We performed Se and F-NMR measurements on single crystals of (TMTSF)2FSO3 to characterize the electronic structures of different phases in the Temperature-Pressure phase diagram, determined by precise transport measurements [Jo et al., Phys. Rev. B67, 014516 (2003)]. We claim that such varieties of electronic states in the refined phase diagram are caused by strong couplings of the conduction electrons with FSO3 anions, especially with the permanent electric dipoles on the anions. We suggest that as temperature decreases, the FSO3 anions form orientational ordering through two steps; first only the tetrahedrons form an orientational order leaving the orientations of the electronic dipoles in random (transition I); then the dipoles form a perfect orientational order at a lower temperature (transition II). In the intermediate temperature range between transitions I and II, we found an appreciable enhancement of homogeneous and inhomogeneous widths of 77Se-NMR spectrum. From the analysis of the angular dependence of the linewidth, we attributed these anomalies to the intramolecular charge disproportionation or imbalance and its slow dynamics caused by the coupling with the permanent electric dipole of anion. Results of 19F-NMR relaxation and lineshape measurements support this picture very well. Electronic structures at higher pressures up to 1.25 GPa are discussed on the basis of the results of the 77Se and 19F-NMR measurements.

preprint2016arXiv

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.