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Researcher profile

Kouji Segawa

Kouji Segawa contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.dis-nnphysics.optics

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Published work

47 published item(s)

preprint2015arXiv

Direct Observation of Nonequivalent Fermi-Arc States of Opposite Surfaces in Noncentrosymmetric Weyl Semimetal NbP

We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) on noncentrosymmetric Weyl semimetal candidate NbP, and determined the electronic states of both Nb- and P-terminated surfaces corresponding to the "opposite" surfaces of a polar crystal. We revealed a drastic difference in the Fermi-surface topology between the opposite surfaces, whereas the Fermi arcs on both surfaces are likely terminated at the surface projection of the same bulk Weyl nodes. Comparison of the ARPES data with our first-principles band calculations suggests notable difference in electronic structure at the Nb-terminated surface between theory and experiment. The present result opens a platform for realizing exotic quantum phenomena arising from unusual surface properties of Weyl semimetals.

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preprint2015arXiv

Ferromagnetism in Cr-doped topological insulator TlSbTe2

We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl_{1-x}Cr_{x}SbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θ_c was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μ_B (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass (SdH) oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.

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preprint2015arXiv

Instantaneous Photon Drag Currents in Topological Insulators

Topological insulator materials have been extensively studied in the field of condensed matter physics because nontrivial topology in the electronic state gives rise to a novel spin-polarized Dirac dispersion on the surface. To describe the electrodynamics of topological insulators, it is crucial to understand coherent and incoherent dynamics of carriers both in bulk and surface states. We applied terahertz emission spectroscopy to an intrinsic three-dimensional topological insulator material, $Bi_{1.5} Sb_{0.5} Te_{1.7} Se_{1.3}$, to elucidate ultrafast photo-induced carrier dynamics. The emitted terahertz electric field strongly depended on the polarization and incident angle of the excitation pulse. A three-fold rotational symmetry was clearly confirmed in the dependence of terahertz emissions on the azimuthal angle. The origin of terahertz emissions should be instantaneous photon drag currents induced by the excitation of femtosecond pulses.

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preprint2015arXiv

Observation of Two-Dimensional Bulk Electronic States in a Superconducting Topological Insulator Heterostructure Cux(PbSe)5(Bi2Se3)6: Implications for Unconventional Superconductivity

We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the occurrence of possible unconventional superconductivity. Upon Cu intercalation into the parent compound (PbSe)5(Bi2Se3)6, we observed a distinct energy shift of the bulk conduction band due to electron doping. Photon-energy dependent ARPES measurements of CPSBS revealed that the observed bulk band forms a cylindrical electronlike Fermi surface at the Brillouin-zone center. The two-dimensional nature of the bulk electronic states suggests the occurrence of odd-parity Eu pairing or even-parity d-wave pairing, both of which may provide a platform of Majorana bound states in the superconducting state.

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preprint2015arXiv

Spin-Polarized Quantum Well States on Bi$_{2-x}$Fe$_x$Se$_3$

Low temperature scanning tunneling microscopy is used to image the doped topological insulator Bi$_{2-x}$Fe$_x$Se$_3$. Interstitial Fe defects allow the detection of quasiparticle interference (QPI), and the reconstruction of the empty state band structure. Quantitative comparison between measured data and density functional theory calculations reveals the unexpected coexistence of quantum well states (QWS) with topological surface states (TSS) on the atomically clean surface of Bi$_{2-x}$Fe$_x$Se$_3$. Spectroscopic measurements quantify the breakdown of linear dispersion due to hexagonal warping. Nonetheless, both QWS and TSS remain spin-polarized and protected from backscattering to almost 1 eV above the Dirac point, suggesting their utility for spin-based applications.

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preprint2014arXiv

A new superconductor derived from topological insulator heterostructure

Topological superconductors (TSCs) are of significant current interest because they offer promising platforms for finding Majorana fermions. Here we report a new superconductor synthesized by intercalating Cu into a naturally-formed topological insulator (TI) heterostructure consisting of Bi2Se3 TI units separated by nontopological PbSe units. For the first time in a TI-based superconductor, the specific-heat behavior of this material suggests the occurrence of unconventional superconductivity with gap nodes. The existence of gap nodes in a strongly spin-orbit coupled superconductor would give rise to spin-split Andreev bound states that are the hallmark of topological superconductivity. Hence, this new superconductor emerges as an intriguing candidate TSC.

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preprint2014arXiv

Doping-dependent charge dynamics in CuxBi2Se3

Superconducting CuxBi2Se3 has attracted significant attention as a candidate topological superconductor. Besides inducing superconductivity, the introduction of Cu atoms to this material has also been observed to produce a number of unusual features in DC transport and magnetic susceptibility measurements. To clarify the effect of Cu doping, we have performed a systematic optical spectroscopic study of the electronic structure of CuxBi2Se3 as a function of Cu doping. Our measurements reveal an increase in the conduction band effective mass, while both the free carrier density and lifetime remain relatively constant for Cu content greater than x=0.15. The increased mass naturally explains trends in the superfluid density and residual resistivity as well as hints at the complex nature of Cu doping in Bi2Se3.

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preprint2014arXiv

Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3

We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was injected/extracted through a ferromagnetic electrode made of Ni80Fe20, and an unusual current-direction-dependent magnetoresistance gives evidence for the appearance of spin polarization which leads to a spin-dependent resistance at the BSTS/Ni80Fe20 interface. In contrast, our control experiment on Bi2Se3 gave null result. These observations demonstrate the importance of the Fermi-level control for the electrical detection of the spin polarization in topological insulators.

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preprint2014arXiv

Large linear magnetoresistance in the Dirac semimetal TlBiSSe

The mixed-chalcogenide compound TlBiSSe realizes a three-dimensional (3D) Dirac semimetal state. In clean, low-carrier-density single crystals of this material, we found Shubnikov-de Haas oscillations to signify its 3D Dirac nature. Moreover, we observed very large linear magnetoresistance (MR) approaching 10,000% in 14 T at 1.8 K, which diminishes rapidly above 30 K. Our analysis of the magnetotransport data points to the possibility that the linear MR is fundamentally governed by the Hall field; although such a situation has been predicted for highly-inhomogeneous systems, inhomogeneity does not seem to play an important role in TlBiSSe. Hence, the mechanism of large linear MR is an intriguing open question in a clean 3D Dirac system.

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preprint2014arXiv

Pb_{5}Bi_{24}Se_{41}: A New Member of the Homologous Series Forming Topological Insulator Heterostructures

We have synthesized Pb_{5}Bi_{24}Se_{41}, which is a new member of the (PbSe)_{5}(Bi2Se3)_{3m} homologous series with m = 4. This series of compounds consist of alternating layers of the topological insulator Bi2Se3 and the ordinary insulator PbSe. Such a naturally-formed heterostructure has recently been elucidated to give rise to peculiar quasi-two-dimensional topological states throughout the bulk, and the discovery of Pb_{5}Bi_{24}Se_{41} expands the tunability of the topological states in this interesting homologous series. The trend in the resistivity anisotropy in this homologous series suggests an important role of hybridization of the topological states in the out-of-plane transport.

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preprint2014arXiv

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiN_x dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples.

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preprint2014arXiv

Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

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preprint2013arXiv

Anomalous dressing of Dirac fermions in the topological surface state of Bi2Se3, Bi2Te3, and CuxBi2Se3

Quasiparticle dynamics on the topological surface state of Bi2Se3, Bi2Te3, and superconducting CuxBi2Se3 are studied by 7 eV laser-based angle resolved photoemission spectroscopy. We find strong mode-couplings in the Dirac-cone surface states at energies of ~3 and ~15-20 meV, which leads to an exceptionally large coupling constant of ~3, which is one of the strongest ever reported for any material. This result is compatible with the recent observation of a strong Kohn anomaly in the surface phonon dispersion of Bi2Se3, but it appears that the theoretically proposed "spin-plasmon" excitations realized in helical metals are also playing an important role. Intriguingly, the ~3 meV mode coupling is found to be enhanced in the superconducting state of CuxBi2Se3.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anomalous metallic state above the upper critical field of the conventional three-dimensional superconductor AgSnSe2 with strong intrinsic disorder

We report superconducting properties of AgSnSe2 which is a conventional type-II superconductor in the very dirty limit due to intrinsically strong electron scatterings. While this material is an isotropic three-dimensional (3D) superconductor with a not-so-short coherence length where strong vortex fluctuations are NOT expected, we found that the magnetic-field-induced resistive transition at fixed temperatures becomes increasingly broader toward zero temperature and, surprisingly, that this broadened transition is taking place largely ABOVE the upper critical field determined thermodynamically from the specific heat. This result points to the existence of an anomalous metallic state possibly caused by quantum phase fluctuations in a strongly-disordered 3D superconductor.

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preprint2013arXiv

Bulk topological insulators as inborn spintronics detectors

Detection and manipulation of electrons' spins are key prerequisites for spin-based electronics or spintronics. This is usually achieved by contacting ferromagnets with metals or semiconductors, in which the relaxation of spins due to spin-orbit coupling limits both the efficiency and the length scale. In topological insulator materials, on the contrary, the spin-orbit coupling is so strong that the spin direction uniquely determines the current direction, which allows us to conceive a whole new scheme for spin detection and manipulation. Nevertheless, even the most basic process, the spin injection into a topological insulator from a ferromagnet, has not yet been demonstrated. Here we report successful spin injection into the surface states of topological insulators by using a spin pumping technique. By measuring the voltage that shows up across the samples as a result of spin pumping, we demonstrate that a spin-electricity conversion effect takes place in the surface states of bulk-insulating topological insulators Bi1.5Sb0.5Te1.7Se1.3 and Sn-doped Bi2Te2Se. In this process, due to the two-dimensional nature of the surface state, there is no spin current along the perpendicular direction. Hence, the mechanism of this phenomenon is different from the inverse spin Hall effect and even predicts perfect conversion between spin and electricity at room temperature. The present results reveal a great advantage of topological insulators as inborn spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Relationship between Fermi-Surface Warping and Out-of-Plane Spin Polarization in Topological Insulators: a View from Spin-Resolved ARPES

We have performed spin- and angle-resolved photoemission spectroscopy of the topological insulator Pb(Bi,Sb)2Te4 (Pb124) and observed significant out-of-plane spin polarization on the hexagonally warped Dirac-cone surface state. To put this into context, we carried out quantitative analysis of the warping strengths for various topological insulators (Pb124, Bi2Te3, Bi2Se3, and TlBiSe2) and elucidated that the out-of-plane spin polarization Pz is systematically correlated with the warping strength. However, the magnitude of Pz is found to be only half of that expected from the kp theory when the warping is strong, which points to the possible role of many-body effects. Besides confirming a universal relationship between the spin polarization and the surface state structure, our data provide an empirical guiding principle for tuning the spin polarization in topological insulators.

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preprint2013arXiv

Tunability of the k-space Location of the Dirac Cones in the Topological Crystalline Insulator Pb1-xSnxTe

We have performed systematic angle-resolved photoemission spectroscopy of the topological crystalline insulator (TCI) Pb1-xSnxTe to elucidate the evolution of its electronic states across the topological phase transition. As previously reported, the band structure of SnTe (x = 1.0) measured on the (001) surface possesses a pair of Dirac-cone surface states located symmetrically across the Xbar point in the (110) mirror plane. Upon approaching the topological phase transition into the trivial phase at x_c ~ 0.25, we discovered that Dirac cones gradually move toward the Xbar point with its spectral weight gradually reduced with decreasing x. In samples with x <= 0.2, the Dirac-cone surface state is completely gone, confirming the occurrence of the topological phase transition. Also, the evolution of the valence band feature is found to be consistent with the bulk band inversion taking place at x_c. The tunability of the location of the Dirac cones in the Brillouin zone would be useful for applications requiring Fermi-surface matching with other materials, such as spin injection.

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preprint2013arXiv

Two types of Dirac-cone surface states on (111) surface of topological crystalline insulator SnTe

We have performed angle-resolved photoemission spectroscopy (ARPES) on the (111) surface of the topological crystalline insulator SnTe. Distinct from a pair of Dirac-cone surface states across the X_bar point of the surface Brillouin zone on the (001) surface, we revealed two types of Dirac-cone surface states each centered at the G_bar and M_bar points, which originate from the bulk-band inversion at the L points. We also found that the energy location of the Dirac point and the Dirac velocity are different from each other. This ARPES experiment demonstrates the surface states on different crystal faces of a topological material, and it elucidates how mirror-symmetry-protected Dirac cones of a topological crystalline insulator show up on surfaces with different symmetries.

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preprint2013arXiv

Unexpectedly robust protection from backscattering in the topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$

Electron scattering in the topological surface state (TSS) of the bulk-insulating topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ was studied using quasiparticle interference observed by scanning tunneling microscopy. It was found that not only the 180$^{\circ}$ backscattering but also a wide range of backscattering angles of 100$^{\circ}$--180$^{\circ}$ is effectively prohibited in the TSS. This conclusion was obtained by comparing the observed scattering vectors with the diameters of the constant-energy contours of the TSS, which were measured for both occupied and unoccupied states using time- and angle-resolved photoemission spectroscopy. The unexpectedly robust protection from backscattering in the TSS is a good news for applications, but it poses a challenge to the theoretical understanding of the transport in the TSS.

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preprint2013arXiv

Unusual nature of fully-gapped superconductivity in In-doped SnTe

The superconductor Sn_{1-x}In_{x}Te is a doped topological crystalline insulator and has become important as a candidate topological superconductor, but its superconducting phase diagram is poorly understood. By measuring about 50 samples of high-quality, vapor-grown single crystals, we found that the dependence of the superconducting transition temperature Tc on the In content x presents a qualitative change across the critical doping xc ~ 3.8%, at which a structural phase transition takes place. Intriguingly, in the ferroelectric rhombohedral phase below the critical doping, Tc is found to be strongly ENHANCED with impurity scattering. It appears that the nature of electron pairing changes across xc in Sn_{1-x}In_{x}Te.

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preprint2012arXiv

Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid

We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating BiSbTeSe2 system where the chemical potential is located close to both the surface Dirac point and the middle of the bulk band gap. Thanks to the use of ionic liquid, the control of the surface chemical potential by gating was possible on the whole surface of a bulk three-dimensional sample, opening new experimental opportunities for topological insulators. In addition, our data suggest the existence of a nearly reversible electrochemical reaction that causes bulk carrier doping into the crystal during the ionic-liquid gating process.

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preprint2012arXiv

Anomalous suppression of the superfluid density in the CuxBi2Se3 superconductor upon progressive Cu intercalation

CuxBi2Se3 was recently found to be likely the first example of a time-reversal-invariant topological superconductor accompanied by helical Majorana fermions on the surface. Here we present that progressive Cu intercalation into this system introduces significant disorder and leads to an anomalous suppression of the superfluid density which was obtained from the measurements of the lower critical field. At the same time, the transition temperature T_c is only moderately suppressed, which agrees with a recent prediction for the impurity effect in this class of topological superconductors bearing strong spin-orbit coupling. Those unusual disorder effects give support to the possible odd-parity pairing state in CuxBi2Se3.

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preprint2012arXiv

Experimental realization of a topological crystalline insulator in SnTe

Topological insulators materialize a topological quantum state of matter where unusual gapless metallic state protected by time-reversal symmetry appears at the edge or surface. Their discovery stimulated the search for new topological states protected by other symmetries, and a recent theory predicted the existence of &#34;topological crystalline insulators&#34; (TCIs) in which the metallic surface states are protected by mirror symmetry of the crystal. However, its experimental verification has not yet been reported. Here we show the first and definitive experimental evidence for the TCI phase in tin telluride (SnTe) which was recently predicted to be a TCI. Our angle-resolved photoemission spectroscopy shows clear signature of a metallic Dirac-cone surface band with its Dirac point slightly away from the edge of the surface Brillouin zone in SnTe. On the other hand, such a gapless surface state is absent in a cousin material lead telluride (PbTe), in line with the theoretical prediction. Our result establishes the presence of a TCI phase, and opens new avenues for exotic topological phenomena.

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preprint2012arXiv

Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping

We report the effect of Sn doping on the transport properties of the topological insulator Bi_{2}Te_{2}Se studied in a series of Bi_{2-x}Sn_{x}Te_{2}Se crystals with 0 \leq x \leq 0.02. The undoped stoichiometric compound (x = 0) shows an n-type metallic behavior with its Fermi level pinned to the conduction band. In the doped compound, it is found that Sn acts as an acceptor and leads to a downshift of the Fermi level. For x \geq 0.004, the Fermi level is lowered into the bulk forbidden gap and the crystals present a resistivity considerably larger than 1 Ohmcm at low temperatures. In those crystals, the high-temperature transport properties are essentially governed by thermally-activated carriers whose activation energy is 95-125 meV, which probably signifies the formation of a Sn-related impurity band. In addition, the surface conductance directly obtained from the Shubnikov-de Haas oscillations indicates that a surface-dominated transport can be achieved in samples with several um thickness.

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preprint2012arXiv

Fermiology of Strongly Spin-Orbit Coupled Superconductor Sn1-xInxTe and its Implication to Topological Superconductivity

We have performed angle-resolved photoemission spectroscopy of the strongly spin-orbit coupled low-carrier density superconductor Sn1-xInxTe (x = 0.045) to elucidate the electronic states relevant to the possible occurrence of topological superconductivity recently reported for this compound from point-contact spectroscopy. The obtained energy-band structure reveals a small holelike Fermi surface centered at the L point of the bulk Brillouin zone, together with a signature of a topological surface state which indicates that this superconductor is essentially a doped topological crystalline insulator characterized by band inversion and mirror symmetry. A comparison of the electronic states with a band-non-inverted superconductor possessing a similar Fermi surface structure, Pb1-xTlxTe, suggests that the anomalous behavior in the superconducting state of Sn1-xInxTe is likely to be related to the peculiar orbital characteristics of the bulk valence band and/or the presence of a topological surface state.

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preprint2012arXiv

Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films

The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the three-dimensionality is lost. By measuring the Shubnikov-de Haas oscillations in a series of high-quality Bi2Se3 thin films, we revealed a systematic evolution of the surface conductance as a function of thickness and found a striking manifestation of the topological protection: The metallic surface transport abruptly diminishes below the critical thickness of ~6 nm, at which an energy gap opens in the surface state and the Dirac fermions become massive. At the same time, the weak antilocalization behavior is found to weaken in the gapped phase due to the loss of πBerry phase.

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preprint2012arXiv

Manipulation of Topological States and Bulk Band Gap Using Natural Heterostructures of a Topological Insulator

We have performed angle-resolved photoemission spectroscopy on (PbSe)5(Bi2Se3)3m, which forms a natural multilayer heterostructure consisting of a topological insulator (TI) and an ordinary insulator. For m = 2, we observed a gapped Dirac-cone state within the bulk-band gap, suggesting that the topological interface states are effectively encapsulated by block layers; furthermore, it was found that the quantum confinement effect of the band dispersions of Bi2Se3 layers enhances the effective bulk-band gap to 0.5 eV, the largest ever observed in TIs. In addition, we found that the system is no longer in the topological phase at m = 1, pointing to a topological phase transition between m = 1 and 2. These results demonstrate that utilization of naturally-occurring heterostructures is a new promising strategy for realizing exotic quantum phenomena and device applications of TIs.

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preprint2012arXiv

Odd-Parity Pairing and Topological Superconductivity in a Strongly Spin-Orbit Coupled Semiconductor

The existence of topological superconductors preserving time-reversal symmetry was recently predicted, and they are expected to provide a solid-state realization of itinerant massless Majorana fermions and a route to topological quantum computation. Their first concrete example, CuxBi2Se3, was discovered last year, but the search for new materials has so far been hindered by the lack of guiding principle. Here, we report point-contact spectroscopy experiments showing that the low-carrier-density superconductor Sn_{1-x}In_{x}Te is accompanied with surface Andreev bound states which, with the help of theoretical analysis, give evidence for odd-parity pairing and topological superconductivity. The present and previous finding of topological superconductivity in Sn_{1-x}In_{x}Te and CuxBi2Se3 demonstrates that odd-parity pairing favored by strong spin-orbit coupling is a common underlying mechanism for materializing topological superconductivity.

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preprint2012arXiv

Spin Polarization of Gapped Dirac Surface States Near the Topological Phase Transition in TlBi(S1-xSex)2

We performed systematic spin- and angle-resolved photoemission spectroscopy of TlBi(S1-xSex)2 which undergoes a topological phase transition at x ~ 0.5. In TlBiSe2 (x = 1.0), we revealed a helical spin texture of Dirac-cone surface states with an intrinsic in-plane spin polarization of ~ 0.8. The spin polarization still survives in the gapped surface states at x > 0.5, although it gradually weakens upon approaching x = 0.5 and vanishes in the non-topological phase. No evidence for the out-of-plane spin polarization was found irrespective of x and momentum. The present results unambiguously indicate the topological origin of the gapped Dirac surface states, and also impose a constraint on models to explain the origin of mass acquisition of Dirac fermions.

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preprint2012arXiv

Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator

The three-dimensional (3D) topological insulator is a novel quantum state of matter where an insulating bulk hosts a linearly-dispersing surface state, which can be viewed as a sea of massless Dirac fermions protected by the time-reversal symmetry (TRS). Breaking the TRS by a magnetic order leads to the opening of a gap in the surface state and consequently the Dirac fermions become massive. It has been proposed theoretically that such a mass acquisition is necessary for realizing novel topological phenomena, but achieving a sufficiently large mass is an experimental challenge. Here we report an unexpected discovery that the surface Dirac fermions in a solid-solution system TlBi(S1-xSex)2 acquires a mass without explicitly breaking the TRS. We found that this system goes through a quantum phase transition from the topological to the non-topological phase, and by tracing the evolution of the electronic states using the angle-resolved photoemission, we observed that the massless Dirac state in TlBiSe2 switches to a massive state before it disappears in the non-topological phase. This result suggests the existence of a condensed-matter version of the &#34;Higgs mechanism&#34; where particles acquire a mass through spontaneous symmetry breaking.

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preprint2011arXiv

Bulk superconducting phase with a full energy gap in the doped topological insulator Cu_xBi_2Se_3

The superconductivity recently found in the doped topological insulator Cu_xBi_2Se_3 offers a great opportunity to search for a topological superconductor. We have successfully prepared a single-crystal sample with a large shielding fraction and measured the specific-heat anomaly associated with the superconductivity. The temperature dependence of the specific heat suggests a fully-gapped, strong-coupling superconducting state, but the BCS theory is not in full agreement with the data, which hints at a possible unconventional pairing in Cu_xBi_2Se_3. Also, the evaluated effective mass of 2.6m_e (m_e is the free electron mass) points to a large mass enhancement in this material.

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preprint2011arXiv

Direct Measurement of the Out-of-Plane Spin Texture in the Dirac Cone Surface State of a Topological Insulator

We have performed spin- and angle-resolved photoemission spectroscopy of Bi2Te3 and present the first direct evidence for the existence of the out-of-plane spin component on the surface state of a topological insulator. We found that the magnitude of the out-of-plane spin polarization on a hexagonally deformed Fermi surface (FS) of Bi2Te3 reaches maximally 25% of the in-plane counterpart while such a sizable out-of-plane spin component does not exist in the more circular FS of TlBiSe2, indicating that the hexagonal deformation of the FS is responsible for the deviation from the ideal helical spin texture. The observed out-of-plane polarization is much smaller than that expected from existing theory, suggesting that an additional ingredient is necessary for correctly understanding the surface spin polarization in Bi2Te3.

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preprint2011arXiv

Direct Observation of the Topological Surface States in Lead-Based Ternary Telluride Pb(Bi1-xSbx)2Te4

We have performed angle-resolved photoemission spectroscopy on Pb(Bi1-xSbx)2Te4, which is a member of lead-based ternary tellurides and has been theoretically proposed as a candidate for a new class of three-dimensional topological insulators (TIs). In PbBi2Te4, we found a topological surface state with a hexagonally deformed Dirac-cone band dispersion, indicating that this material is a strong TI with a single topological surface state at the Brillouin-zone center. Partial replacement of Bi with Sb causes a marked change in the Dirac carrier concentration, leading to the sign change of Dirac carriers from n-type to p-type. The Pb(Bi1-xSbx)2Te4 system with tunable Dirac carriers thus provides a new platform for investigating exotic topological phenomena.

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preprint2011arXiv

Electrochemical synthesis and superconducting phase diagram of Cu_xBi2Se3

The superconducting Cu_xBi_2Se_3 is an electron-doped topological insulator and is a prime candidate of the topological superconductor which still awaits discovery. The electrochemical intercalation technique for synthesizing Cu_xBi2Se3 offers good control of restricting Cu into the van-der-Waals gap and yields samples with shielding fractions of up to ~50%. We report essential details of this synthesis technique and present the established superconducting phase diagram of T_c vs x, along with a diagram of the shielding fraction vs x. Intriguingly, those diagrams suggest that there is a tendency to spontaneously form small islands of optimum superconductor in this material.

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preprint2011arXiv

Observation of Dirac Holes and Electrons in a Topological Insulator

We show that in the new topological-insulator compound Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3} one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.

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preprint2011arXiv

Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition where a high level of compensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.

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preprint2011arXiv

Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime

To optimize the bulk-insulating behavior in the topological insulator materials having the tetradymite structure, we have synthesized and characterized single-crystal samples of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) (BSTS) solid solution at various compositions. We have elucidated that there are a series of &#34;intrinsic&#34; compositions where the acceptors and donors compensate each other and present a maximally bulk-insulating behavior. At such compositions, the resistivity can become as large as several Ohmcm at low temperature and one can infer the role of the surface-transport channel in the non-linear Hall effect. In particular, the composition of Bi1.5Sb0.5Te1.7Se1.3 achieves the lowest bulk carrier density and appears to be best suited for surface transport studies.

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preprint2011arXiv

Topological Superconductivity in CuxBi2Se3

A topological superconductor (TSC) is characterized by the topologically-protected gapless surface state that is essentially an Andreev bound state consisting of Majorana fermions. While a TSC has not yet been discovered, the doped topological insulator CuxBi2Se3, which superconducts below ~3 K, has been predicted to possess a topological superconducting state. We report that the point-contact spectra on the cleaved surface of superconducting CuxBi2Se3 present a zero-bias conductance peak (ZBCP) which signifies unconventional superconductivity. Theoretical considerations of all possible superconducting states help us conclude that this ZBCP is due to Majorana Fermions and gives evidence for a topological superconductivity in CuxBi2Se3. In addition, we found an unusual pseudogap that develops below ~20 K and coexists with the topological superconducting state.

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preprint2010arXiv

Additional Evidence for the Surface Origin of the Peculiar Angular-Dependent Magnetoresistance Oscillations Discovered in a Topological Insulator Bi_{1-x}Sb_{x}

We present detailed data on the unusual angular-dependent magnetoresistance oscillation phenomenon recently discovered in a topological insulator Bi_{0.91}Sb_{0.09}. Direct comparison of the data taken before and after etching the sample surface gives compelling evidence that this phenomenon is essentially originating from a surface state. The symmetry of the oscillations suggests that it probably comes from the (111) plane, and obviously a new mechanism, such as a coupling between the surface and the bulk states, is responsible for this intriguing phenomenon in topological insulators.

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preprint2010arXiv

Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface

We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5x10^18 cm^-3, which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are solely due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angular-dependent MR studies in Bi2Se3 with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of an anisotropic three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.

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preprint2010arXiv

Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2

We have performed high-resolution angle-resolved photoemission spectroscopy on TlBiSe2, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. By measuring the energy band dispersions over the entire surface Brillouin zone, we found a direct evidence for a non-trivial surface metallic state showing a X-shaped energy dispersion within the bulk band gap. The present result unambiguously establishes that TlBiSe2 is a strong topological insulator with a single Dirac cone at the Brillouin-zone center. The observed bulk band gap of 0.4 eV is the largest among known topological insulators, making TlBiSe2 the most promising material for studying room-temperature topological phenomena.

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preprint2010arXiv

Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se

Topological insulators are predicted to present novel surface transport phenomena, but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that a new topological insulator, Bi2Te2Se, presents a high resistivity exceeding 1 Ohm-cm and a variable-range hopping behavior, and yet presents Shubnikov-de Haas oscillations coming from the surface Dirac fermions. Furthermore, we have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport in this material. Our results demonstrate that Bi2Te2Se is the best material to date for studying the surface quantum transport in a topological insulator.

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preprint2010arXiv

Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi_{1-x}Sb_{x}

The angular-dependent magnetoresistance and the Shubnikov-de Haas oscillations are studied in a topological insulator Bi_{0.91}Sb_{0.09}, where the two-dimensional (2D) surface states coexist with a three-dimensional (3D) bulk Fermi surface (FS). Two distinct types of oscillatory phenomena are discovered in the angular-dependence: The one observed at lower fields is shown to originate from the surface state, which resides on the (2\bar{1}\bar{1}) plane, giving a new way to distinguish the 2D surface state from the 3D FS. The other one, which becomes prominent at higher fields, probably comes from the (111) plane and is obviously of unknown origin, pointing to new physics in transport properties of topological insulators.

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preprint2010arXiv

Spin-Orbit Coupling and Anomalous Angular-Dependent Magnetoresistance in the Quantum Transport Regime of PbS

We measured magnetotransport properties of PbS single crystals which exhibit the quantum linear magnetoresistance (MR) as well as the static skin effect that creates a surface layer of additional conductivity. The Shubnikov-de Haas oscillations in the longitudinal MR signify the peculiar role of spin-orbit coupling. In the angular-dependent MR, sharp peaks are observed when the magnetic field is slightly inclined from the longitudinal configuration, which is totally unexpected for a system with nearly spherical Fermi surface and points to an intricate interplay between the spin-orbit coupling and the conducting surface layer in the quantum transport regime.

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preprint2009arXiv

Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate

In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and the electron-doped system Nd_2-xCexCuO4, we have estimated the true chemical potential jump between the hole- and electron-doped YLBLCO to be ~0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.

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preprint2007arXiv

Pitfalls in the analysis of low-temperature thermal conductivity of high-Tc cuprates

Recently, it was proposed that phonons are specularly reflected below about 0.5 K in ordinary single-crystal samples of high-T_c cuprates, and that the low-temperature thermal conductivity should be analyzed by fitting the data up to 0.5 K using an arbitrary power law. Such an analysis yields a result different from that obtained from the conventional analysis, in which the fitting is usually restricted to a region below 0.15 K. Here we show that the proposed new analysis is most likely flawed, because the specular phonon reflection means that the phonon mean free path \ell gets LONGER than the mean sample width, while the estimated \ell is actually much SHORTER than the mean sample width above 0.15 K.

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preprint2005arXiv

Low-temperature nodal-quasiparticle transport in lightly doped YBa_{2}Cu_{3}O_{y} near the edge of the superconducting doping regime

In-plane transport properties of nonsuperconducting YBa_{2}Cu_{3}O_{y} (y = 6.35) are measured using high-quality untwinned single crystals. We find that both the a- and b-axis resistivities show log(1/T) divergence down to 80 mK, and accordingly the thermal conductivity data indicate that the nodal quasiparticles are progressively localized with lowering temperature. Hence, both the charge and heat transport data do not support the existence of a &#34;thermal metal&#34; in nonsuperconducting YBa_{2}Cu_{3}O_{y}, as opposed to a recent report by Sutherland {\it et al.} [Phys. Rev. Lett. {\bf 94}, 147004 (2005)]. Besides, the present data demonstrate that the peculiar log(1/T) resistivity divergence of cuprate is {\it not} a property associated with high-magnetic fields.

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