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Satoshi Sasaki

Satoshi Sasaki contributes to research discovery and scholarly infrastructure.

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Published work

28 published item(s)

preprint2015arXiv

Observation of Two-Dimensional Bulk Electronic States in a Superconducting Topological Insulator Heterostructure Cux(PbSe)5(Bi2Se3)6: Implications for Unconventional Superconductivity

We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the occurrence of possible unconventional superconductivity. Upon Cu intercalation into the parent compound (PbSe)5(Bi2Se3)6, we observed a distinct energy shift of the bulk conduction band due to electron doping. Photon-energy dependent ARPES measurements of CPSBS revealed that the observed bulk band forms a cylindrical electronlike Fermi surface at the Brillouin-zone center. The two-dimensional nature of the bulk electronic states suggests the occurrence of odd-parity Eu pairing or even-parity d-wave pairing, both of which may provide a platform of Majorana bound states in the superconducting state.

preprint2015arXiv

Superconducting doped topological materials

Recently, the search for Majorana fermions (MFs) has become one of the most important and exciting issues in condensed matter physics since such an exotic quasiparticle is expected to potentially give rise to unprecedented quantum phenomena whose functional properties will be used to develop future quantum technology. Theoretically, the MFs may reside in various types of topological superconductor materials that is characterized by the topologically protected gapless surface state which are essentially an Andreev bound state. Superconducting doped topological insulators and topological crystalline insulators are promising candidates to harbor the MFs. In this review, we discuss recent progress and understanding on the research of MFs based on time-reversal-invariant superconducting topological materials to deepen our understanding and have a better outlook on both the search for and realization of MFs in these systems. We also discuss some advantages of these bulk systems to realize MFs including remarkable superconducting robustness against nonmagnetic impurities.

preprint2014arXiv

A new superconductor derived from topological insulator heterostructure

Topological superconductors (TSCs) are of significant current interest because they offer promising platforms for finding Majorana fermions. Here we report a new superconductor synthesized by intercalating Cu into a naturally-formed topological insulator (TI) heterostructure consisting of Bi2Se3 TI units separated by nontopological PbSe units. For the first time in a TI-based superconductor, the specific-heat behavior of this material suggests the occurrence of unconventional superconductivity with gap nodes. The existence of gap nodes in a strongly spin-orbit coupled superconductor would give rise to spin-split Andreev bound states that are the hallmark of topological superconductivity. Hence, this new superconductor emerges as an intriguing candidate TSC.

preprint2014arXiv

Design of a silica-aerogel-based cosmic dust collector for the Tanpopo mission aboard the International Space Station

We are developing a silica-aerogel-based cosmic dust collector for use in the Tanpopo experiment to be conducted on the International Space Station. The mass production of simple two-layer hydrophobic aerogels was undertaken in a contamination-controlled environment, yielding more than 100 undamaged products. The collector, comprising an aerogel tile and holder panel, was designed to resist launch vibration and to conform to an exposure attachment. To this end, a box-framing aerogel with inner and outer densities of 0.01 and 0.03 g/cm$^3$, respectively, was fabricated. The aerogel mounted in the panel passed random vibration tests at the levels of the acceptance and qualification tests for launch. It also withstood the pressure changes expected in the airlock on the International Space Station.

preprint2014arXiv

Doping-dependent charge dynamics in CuxBi2Se3

Superconducting CuxBi2Se3 has attracted significant attention as a candidate topological superconductor. Besides inducing superconductivity, the introduction of Cu atoms to this material has also been observed to produce a number of unusual features in DC transport and magnetic susceptibility measurements. To clarify the effect of Cu doping, we have performed a systematic optical spectroscopic study of the electronic structure of CuxBi2Se3 as a function of Cu doping. Our measurements reveal an increase in the conduction band effective mass, while both the free carrier density and lifetime remain relatively constant for Cu content greater than x=0.15. The increased mass naturally explains trends in the superfluid density and residual resistivity as well as hints at the complex nature of Cu doping in Bi2Se3.

preprint2014arXiv

Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3

We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was injected/extracted through a ferromagnetic electrode made of Ni80Fe20, and an unusual current-direction-dependent magnetoresistance gives evidence for the appearance of spin polarization which leads to a spin-dependent resistance at the BSTS/Ni80Fe20 interface. In contrast, our control experiment on Bi2Se3 gave null result. These observations demonstrate the importance of the Fermi-level control for the electrical detection of the spin polarization in topological insulators.

preprint2014arXiv

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiN_x dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surface can be efficiently tuned from n- to p-type. We also show that magnetotransport properties give evidence for decoupled transport through top and bottom surfaces for the entire range of gate voltage, which is only possible in truly bulk-insulating samples.

preprint2014arXiv

Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

preprint2013arXiv

Anomalous dressing of Dirac fermions in the topological surface state of Bi2Se3, Bi2Te3, and CuxBi2Se3

Quasiparticle dynamics on the topological surface state of Bi2Se3, Bi2Te3, and superconducting CuxBi2Se3 are studied by 7 eV laser-based angle resolved photoemission spectroscopy. We find strong mode-couplings in the Dirac-cone surface states at energies of ~3 and ~15-20 meV, which leads to an exceptionally large coupling constant of ~3, which is one of the strongest ever reported for any material. This result is compatible with the recent observation of a strong Kohn anomaly in the surface phonon dispersion of Bi2Se3, but it appears that the theoretically proposed "spin-plasmon" excitations realized in helical metals are also playing an important role. Intriguingly, the ~3 meV mode coupling is found to be enhanced in the superconducting state of CuxBi2Se3.

preprint2013arXiv

Anomalous metallic state above the upper critical field of the conventional three-dimensional superconductor AgSnSe2 with strong intrinsic disorder

We report superconducting properties of AgSnSe2 which is a conventional type-II superconductor in the very dirty limit due to intrinsically strong electron scatterings. While this material is an isotropic three-dimensional (3D) superconductor with a not-so-short coherence length where strong vortex fluctuations are NOT expected, we found that the magnetic-field-induced resistive transition at fixed temperatures becomes increasingly broader toward zero temperature and, surprisingly, that this broadened transition is taking place largely ABOVE the upper critical field determined thermodynamically from the specific heat. This result points to the existence of an anomalous metallic state possibly caused by quantum phase fluctuations in a strongly-disordered 3D superconductor.

preprint2013arXiv

Cooperative Lifting of Spin Blockade in a Three-Terminal Triple Quantum Dot

We report measurements of multi-path transport through a triple quantum dot (TQD) in the few-electron regime using a GaAs three-terminal device with a separate lead attached to each dot. When two paths reside inside the transport window and are simultaneously spin-blockaded, the leak currents through both paths are significantly enhanced. We suggest that the transport processes in the two paths cooperate to lift the spin blockade. Fine structures in transport spectra indicate that different kinds of cooperative mechanisms are involved, depending on the details of the three-electron spin states governed by the size of exchange splitting relative to nuclear spin fluctuations. Our results indicate that a variety of correlation phenomena can be explored in three-terminal TQDs.

preprint2013arXiv

Shot noise spectroscopy on a semiconductor quantum dot in the elastic and inelastic cotunneling regimes

We report shot noise spectroscopy on a semiconductor quantum dot in a cotunneling regime. The DC conductance measurements show clear signatures of both elastic and inelastic cotunneling transport inside a Coulomb diamond. We observed Poissonian shot noise with the Fano factor $F\approx 1$ in the elastic cotunneling regime, and super-Poissonian Fano factor $1<F<3$ in the inelastic cotunneling regime. The differences in the value of the Fano factor between elastic and inelastic processes reveal the microscopic mechanisms involved in the cotunneling transport.

preprint2013arXiv

Transmission-phase measurement of the 0.7 anomaly in a quantum point contact

We measure the transmission phase of a quantum point contact (QPC) at a low carrier density in which electron interaction is expected to play an important role and anomalous behaviors are observed. In the first conductance plateau, the transmission phase shifts monotonically as the carrier density is decreased by the gate voltage. When the conductance starts to decrease, in what is often called the 0.7 regime, the phase exhibits an anomalous increase compared with the noninteracting model. The observation implies an increase in the wave vector as the carrier density is decreased, suggesting a transition to a spin-incoherent Luttinger liquid.

preprint2013arXiv

Unusual nature of fully-gapped superconductivity in In-doped SnTe

The superconductor Sn_{1-x}In_{x}Te is a doped topological crystalline insulator and has become important as a candidate topological superconductor, but its superconducting phase diagram is poorly understood. By measuring about 50 samples of high-quality, vapor-grown single crystals, we found that the dependence of the superconducting transition temperature Tc on the In content x presents a qualitative change across the critical doping xc ~ 3.8%, at which a structural phase transition takes place. Intriguingly, in the ferroelectric rhombohedral phase below the critical doping, Tc is found to be strongly ENHANCED with impurity scattering. It appears that the nature of electron pairing changes across xc in Sn_{1-x}In_{x}Te.

preprint2012arXiv

Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid

We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of a highly bulk-insulating BiSbTeSe2 system where the chemical potential is located close to both the surface Dirac point and the middle of the bulk band gap. Thanks to the use of ionic liquid, the control of the surface chemical potential by gating was possible on the whole surface of a bulk three-dimensional sample, opening new experimental opportunities for topological insulators. In addition, our data suggest the existence of a nearly reversible electrochemical reaction that causes bulk carrier doping into the crystal during the ionic-liquid gating process.

preprint2012arXiv

Anomalous suppression of the superfluid density in the CuxBi2Se3 superconductor upon progressive Cu intercalation

CuxBi2Se3 was recently found to be likely the first example of a time-reversal-invariant topological superconductor accompanied by helical Majorana fermions on the surface. Here we present that progressive Cu intercalation into this system introduces significant disorder and leads to an anomalous suppression of the superfluid density which was obtained from the measurements of the lower critical field. At the same time, the transition temperature T_c is only moderately suppressed, which agrees with a recent prediction for the impurity effect in this class of topological superconductors bearing strong spin-orbit coupling. Those unusual disorder effects give support to the possible odd-parity pairing state in CuxBi2Se3.

preprint2012arXiv

Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping

We report the effect of Sn doping on the transport properties of the topological insulator Bi_{2}Te_{2}Se studied in a series of Bi_{2-x}Sn_{x}Te_{2}Se crystals with 0 \leq x \leq 0.02. The undoped stoichiometric compound (x = 0) shows an n-type metallic behavior with its Fermi level pinned to the conduction band. In the doped compound, it is found that Sn acts as an acceptor and leads to a downshift of the Fermi level. For x \geq 0.004, the Fermi level is lowered into the bulk forbidden gap and the crystals present a resistivity considerably larger than 1 Ohmcm at low temperatures. In those crystals, the high-temperature transport properties are essentially governed by thermally-activated carriers whose activation energy is 95-125 meV, which probably signifies the formation of a Sn-related impurity band. In addition, the surface conductance directly obtained from the Shubnikov-de Haas oscillations indicates that a surface-dominated transport can be achieved in samples with several um thickness.

preprint2012arXiv

Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films

The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the three-dimensionality is lost. By measuring the Shubnikov-de Haas oscillations in a series of high-quality Bi2Se3 thin films, we revealed a systematic evolution of the surface conductance as a function of thickness and found a striking manifestation of the topological protection: The metallic surface transport abruptly diminishes below the critical thickness of ~6 nm, at which an energy gap opens in the surface state and the Dirac fermions become massive. At the same time, the weak antilocalization behavior is found to weaken in the gapped phase due to the loss of πBerry phase.

preprint2012arXiv

Observation of Hysteretic Transport Due to Dynamic Nuclear Spin Polarization in a GaAs Lateral Double Quantum Dot

We report a new transport feature in a GaAs lateral double quantum dot that emerges only for magnetic field sweeps and shows hysteresis due to dynamic nuclear spin polarization (DNP). This DNP signal appears in the Coulomb blockade regime by virtue of the finite inter-dot tunnel coupling and originates from the crossing between ground levels of the spin triplet and singlet extensively used for nuclear spin manipulations in pulsed gate experiments. The unexpectedly large signal intensity is suggestive of unbalanced DNP between the two dots, which opens up the possibility of controlling electron and nuclear spin states via DC transport.

preprint2012arXiv

Odd-Parity Pairing and Topological Superconductivity in a Strongly Spin-Orbit Coupled Semiconductor

The existence of topological superconductors preserving time-reversal symmetry was recently predicted, and they are expected to provide a solid-state realization of itinerant massless Majorana fermions and a route to topological quantum computation. Their first concrete example, CuxBi2Se3, was discovered last year, but the search for new materials has so far been hindered by the lack of guiding principle. Here, we report point-contact spectroscopy experiments showing that the low-carrier-density superconductor Sn_{1-x}In_{x}Te is accompanied with surface Andreev bound states which, with the help of theoretical analysis, give evidence for odd-parity pairing and topological superconductivity. The present and previous finding of topological superconductivity in Sn_{1-x}In_{x}Te and CuxBi2Se3 demonstrates that odd-parity pairing favored by strong spin-orbit coupling is a common underlying mechanism for materializing topological superconductivity.

preprint2011arXiv

Bulk superconducting phase with a full energy gap in the doped topological insulator Cu_xBi_2Se_3

The superconductivity recently found in the doped topological insulator Cu_xBi_2Se_3 offers a great opportunity to search for a topological superconductor. We have successfully prepared a single-crystal sample with a large shielding fraction and measured the specific-heat anomaly associated with the superconductivity. The temperature dependence of the specific heat suggests a fully-gapped, strong-coupling superconducting state, but the BCS theory is not in full agreement with the data, which hints at a possible unconventional pairing in Cu_xBi_2Se_3. Also, the evaluated effective mass of 2.6m_e (m_e is the free electron mass) points to a large mass enhancement in this material.

preprint2011arXiv

Electrochemical synthesis and superconducting phase diagram of Cu_xBi2Se3

The superconducting Cu_xBi_2Se_3 is an electron-doped topological insulator and is a prime candidate of the topological superconductor which still awaits discovery. The electrochemical intercalation technique for synthesizing Cu_xBi2Se3 offers good control of restricting Cu into the van-der-Waals gap and yields samples with shielding fractions of up to ~50%. We report essential details of this synthesis technique and present the established superconducting phase diagram of T_c vs x, along with a diagram of the shielding fraction vs x. Intriguingly, those diagrams suggest that there is a tendency to spontaneously form small islands of optimum superconductor in this material.

preprint2011arXiv

Observation of Dirac Holes and Electrons in a Topological Insulator

We show that in the new topological-insulator compound Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3} one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.

preprint2011arXiv

Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition where a high level of compensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.

preprint2011arXiv

Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime

To optimize the bulk-insulating behavior in the topological insulator materials having the tetradymite structure, we have synthesized and characterized single-crystal samples of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) (BSTS) solid solution at various compositions. We have elucidated that there are a series of &#34;intrinsic&#34; compositions where the acceptors and donors compensate each other and present a maximally bulk-insulating behavior. At such compositions, the resistivity can become as large as several Ohmcm at low temperature and one can infer the role of the surface-transport channel in the non-linear Hall effect. In particular, the composition of Bi1.5Sb0.5Te1.7Se1.3 achieves the lowest bulk carrier density and appears to be best suited for surface transport studies.

preprint2011arXiv

Spin-orbital Kondo effect in a parallel double quantum dot

Transport properties of the two-orbital Kondo effect involving both spin and orbital (pseudospin) degrees of freedom were examined in a parallel double quantum dot with a sufficient interdot Coulomb interaction and negligibly small interdot tunneling. The Kondo effect was observed at the interdot Coulomb blockade region with degeneracies of both spin and orbital degrees of freedom. When the orbital degeneracy is lifted by applying a finite detuning, the Kondo resonance exhibits a triple-peak structure, indicating that both spin and orbital contributions are involved.

preprint2011arXiv

Topological Superconductivity in CuxBi2Se3

A topological superconductor (TSC) is characterized by the topologically-protected gapless surface state that is essentially an Andreev bound state consisting of Majorana fermions. While a TSC has not yet been discovered, the doped topological insulator CuxBi2Se3, which superconducts below ~3 K, has been predicted to possess a topological superconducting state. We report that the point-contact spectra on the cleaved surface of superconducting CuxBi2Se3 present a zero-bias conductance peak (ZBCP) which signifies unconventional superconductivity. Theoretical considerations of all possible superconducting states help us conclude that this ZBCP is due to Majorana Fermions and gives evidence for a topological superconductivity in CuxBi2Se3. In addition, we found an unusual pseudogap that develops below ~20 K and coexists with the topological superconducting state.

preprint2010arXiv

Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se

Topological insulators are predicted to present novel surface transport phenomena, but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that a new topological insulator, Bi2Te2Se, presents a high resistivity exceeding 1 Ohm-cm and a variable-range hopping behavior, and yet presents Shubnikov-de Haas oscillations coming from the surface Dirac fermions. Furthermore, we have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport in this material. Our results demonstrate that Bi2Te2Se is the best material to date for studying the surface quantum transport in a topological insulator.