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Researcher profile

Khang Hoang

Khang Hoang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

14 published item(s)

preprint2022arXiv

Rare-earth defects in GaN: A systematic investigation of the lanthanide series

Rare-earth (RE) doped GaN is of interest for optoelectronics and spintronics and potentially for quantum applications. A fundamental understanding of the interaction between RE dopants and the semiconductor host is key to realizing the material's full potential. This work reports an investigation of lanthanide ($Ln$) defects in GaN using hybrid density-functional defect calculations. We find that all the $Ln$ dopants incorporated at the Ga lattice site, $Ln_{\rm Ga}$ ($Ln$ = La--Lu), are stable as trivalent ions, but Eu and Yb can also be stabilized as divalent and Ce, Pr, and Tb as tetravalent. The location of $Ln$-related defect levels and the $Ln$ $4f$ states in the energy spectrum of the host material is determined from first principles. We elucidate the interplay between defect formation and electronic structure, including the $Ln$--N interaction, and the effect of doping on the local lattice environment. Optical properties are investigated by considering possible defect-to-band and band-to-defect transitions involving $Ln_{\rm Ga}$ defects with in-gap energy levels, including broad "charge-transfer" transitions. These defects can also act as carrier traps and mediate energy transfer from the host into the $4f$-electron core of the $Ln$ ion which leads to sharp intra-$f$ luminescence.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Why is it so difficult to realize Dy$^{4+}$ in as-synthesized BaZrO$_3$?

Rare-earth doped barium zirconate (BaZrO$_3$) ceramics are of interest as proton-conducting and luminescent materials. Here, we report a study of dysprosium (Dy) and other relevant point defects in BaZrO$_3$ using hybrid density-functional defect calculations. The tetravalent Dy$^{4+}$ is found to be structurally and electronically stable at the Zr lattice site (i.e., as Dy$_{\rm Zr}^0$), but most often energetically less favorable than the trivalent Dy$^{3+}$ (i.e., Dy$_{\rm Zr}^-$) in as-synthesized BaZrO$_3$, due to the formation of low-energy, positively charged oxygen vacancies and the mixed-site occupancy of Dy in the host lattice. The Dy$^{4+}$/Dy$^{3+}$ ratio can, in principle, be increased by preparing the material under highly oxidizing and Ba-rich conditions and co-doping with acceptor-like impurities; however, post-synthesis treatment may still be needed to realize a non-negligible Dy$^{4+}$ concentration. We also find that certain unoccupied Dy $4f$ states and the O $2p$ states are {\it strongly hybridized}, a feature not often seen in rare-earth-containing materials, and that the isolated Dy$_{\rm Zr}$ defect might be the source of a broad blue emission in band-to-defect ("charge-transfer") luminescence.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Rare-earth defects and defect-related luminescence in ZnS

Structure and energetics of rare-earth (RE) defects and luminescence of RE and related defects in zincblende zinc sulfide (ZnS) are investigated using hybrid density-functional defect calculations. We find that europium (Eu) is stable predominantly as the divalent Eu$^{2+}$ ion in bulk ZnS. The trivalent Eu$^{3+}$ is structurally and electronically stable, but energetically unfavorable compared to Eu$^{2+}$ due to the presence of low-energy native defects and Eu$^{2+}$-related defect complexes. Other RE dopants, dysprosium (Dy) and erbium (Er), are stable only as Dy$^{3+}$ and Er$^{3+}$, respectively. These results provide an explanation why it is difficult to realize Eu$^{3+}$ in bulk ZnS. A non-negligible Eu$^{3+}$/Eu$^{2+}$ ratio might be achieved with Li co-doping under S-rich (and probably non-equilibrium) synthesis conditions. Optically, Eu-related defects can act as carrier traps for band-to-defect transitions and emit light in the visible range. To assist with experimental optical characterization of the RE defects, we include band-to-defect luminescence involving native defects (Zn vacancies) and/or non-RE impurities (Cu, Cl, and Al) that may also be present in Eu-doped ZnS samples, and assign luminescence centers often observed in experiments to specific defect configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association

Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid density-functional defect calculations. This includes the interaction between the rare-earth dopant and native point defects (Ga and N vacancies) and other impurities (O, Si, C, H, and Mg) unintentionally present or intentionally incorporated into the host material. While the trivalent Eu$^{3+}$ ion is often found to be predominant when Eu is incorporated at the Ga site in wurtzite GaN, the divalent Eu$^{2+}$ is also stable and found to be predominant in a small range of Fermi-level values in the band-gap region. The Eu$^{2+}$/Eu$^{3+}$ ratio can be tuned by tuning the position of Fermi level and through defect association. We find co-doping with oxygen can facilitate the incorporation of Eu into the lattice. The unassociated Eu$_{\rm Ga}$ is an electrically and optically active defect center and its behavior is profoundly impacted by local defect--defect interaction. Defect complexes such as Eu$_{\rm Ga}$-O$_{\rm N}$, Eu$_{\rm Ga}$-Si$_{\rm Ga}$, Eu$_{\rm Ga}$-H$_i$, Eu$_{\rm Ga}$-Mg$_{\rm Ga}$, and Eu$_{\rm Ga}$-O$_{\rm N}$-Mg$_{\rm Ga}$ can efficiently act as deep carrier traps and mediate energy transfer from the host into the Eu$^{3+}$ $4f$-electron core which then leads to sharp red intra-$f$ luminescence. Eu-related defects can also give rise to defect-to-band luminescence. The unassociated Eu$_{\rm Ga}$, for example, is identified as a possible source of the broad blue emission observed in n-type, Eu$^{2+}$-containing GaN. This work calls for a re-assessment of certain assumptions regarding specific defect configurations previously made for Eu-doped GaN and further investigation into the origin of the photoluminescence hysteresis observed in (Eu,Mg)-doped samples.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Charge ordering and self-assembled nanostructures in a fcc Coulomb lattice gas

The compositional ordering of Ag, Pb, Sb, Te ions in (AgSbTe$_{2}$)$_{x}$(PbTe)$_{2(1-x)}$ systems possessing a NaCl structure is studied using a Coulomb lattice gas (CLG) model on a face-centered cubic (fcc) lattice and Monte Carlo simulations. Our results show different possible microstructural orderings. Ordered superlattice structures formed out of AgSbTe$_{2}$ layers separated by Pb$_{2}$Te$_{2}$ layers are observed for a large range of $x$ values. For $x=0.5$, we see an array of tubular structures formed by AgSbTe$_{2}$ and Pb$_{2}$Te$_{2}$ blocks. For $x=1$, AgSbTe$_{2}$ has a body-centered tetragonal (bct) structure which is in agreement with previous Monte Carlo simulation results for restricted primitive model (RPM) at closed packed density. The phase diagram of this frustrated CLG system is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Defect chemistry in layered transition-metal oxides from screened hybrid density functional calculations

We report a comprehensive first-principles study of the thermodynamics and transport of intrinsic point defects in layered oxide cathode materials LiMO$_2$ (M=Co, Ni), using density-functional theory and the Heyd-Scuseria-Ernzerhof screened hybrid functional. We find that LiCoO$_2$ has a complex defect chemistry; different electronic and ionic defects can exist under different synthesis conditions, and LiCoO$_2$ samples free of cobalt antisite defects can be made under Li-excess (Co-deficient) environments. A defect model for lithium over-stoichiometric LiCoO$_2$ is also proposed, which involves negatively charged lithium antisites and positively charged small (hole) polarons. In LiNiO$_2$, a certain amount of Ni$^{3+}$ ions undergo charge disproportionation and the concentration of nickel ions in the lithium layers is high. Tuning the synthesis conditions may reduce the nickel antisites but would not remove the charge disproportionation. In addition, we find that LiMO$_2$ cannot be doped $n$- or $p$-type; the electronic conduction occurs via hopping of small polarons and the ionic conduction occurs via migration of lithium vacancies, either through a monovacancy or divacancy mechanism, depending on the vacancy concentration.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

LiH as a Li$^+$ and H$^-$ ion provider

We present a first-principles study of the formation and migration of native defects in lithium hydride (LiH), a material of interest in hydrogen storage and lithium-ion batteries. We find that the negatively charged lithium vacancy and positively charged hydrogen vacancy are the dominant defects in LiH with a formation energy of about 0.85 eV. With this low energy, LiH can be a good provider of Li$^+$ and/or H$^-$ ions. Based on our results, we discuss the role of LiH in its reactions with another reactant which are important in hydrogen storage and lithium-ion batteries, and explain the ionic conductivity and hydrogen surface loss as observed in experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mechanism for the decomposition of lithium borohydride

We report first-principles density functional theory studies of native defects in lithium borohydride (LiBH$_{4}$), a potential material for hydrogen storage. Based on our detailed analysis of the structure, energetics, and migration of lithium-, boron-, and hydrogen-related defects, we propose a specific mechanism for the decomposition and dehydrogenation of LiBH$_{4}$ that involves mass transport mediated by native defects. In this mechanism, LiBH$_{4}$ releases borane (BH$_{3}$) at the surface or interface, leaving the negatively charged hydrogen interstitial (H$_{i}^{-}$) in the material, which then acts as the nucleation site for LiH formation. The diffusion of H$_{i}^{-}$ in the bulk LiBH$_{4}$ is the rate-limiting step in the decomposition kinetics. Lithium vacancies and interstitials have low formation energies and are highly mobile. These defects are responsible for maintaining local charge neutrality as other charged defects migrating along the material, and assisting in the formation of LiH. In light of this mechanism, we discuss the effects of metal additives on hydrogen desorption kinetics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mechanisms for the decomposition and dehydrogenation of Li amide/imide

Reversible reaction involving Li amide (LiNH$_{2}$) and Li imide (Li$_{2}$NH) is a potential mechanism for hydrogen storage. Recent synchrotron x-ray diffraction experiments [W. I. David et al., J. Am. Chem. Soc. 129, 1594 (2007)] suggest that the transformation between LiNH$_{2}$ and Li$_{2}$NH is a bulk reaction that occurs through non-stoichiometric processes and involves the migration of Li$^{+}$ and H$^{+}$ ions. In order to understand the atomistic mechanisms behind these processes, we carry out comprehensive first-principles studies of native point defects and defect complexes in the two compounds. We find that both LiNH$_{2}$ and Li$_{2}$NH are prone to Frenkel disorder on the Li sublattice. Lithium interstitials and vacancies have low formation energies and are highly mobile, and therefore play an important role in mass transport and ionic conduction. Hydrogen interstitials and vacancies, on the other hand, are responsible for forming and breaking N$-$H bonds, which is essential in the Li amide/imide reaction. Based on the structure, energetics, and migration of hydrogen-, lithium-, and nitrogen-related defects, we propose that LiNH$_{2}$ decomposes into Li$_{2}$NH and NH$_{3}$ according to two competing mechanisms with different activation energies: one mechanism involves the formation of native defects in the interior of the material, the other at the surface. As a result, the prevailing mechanism and hence the effective activation energy for decomposition depend on the surface-to-volume ratio or the specific surface area, which changes with particle size during ball milling. These mechanisms also provide an explanation for the dehydrogenation of LiNH$_{2}$+LiH mixtures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The role of native defects in the transport of charge and mass and the decomposition of Li$_{4}$BN$_{3}$H$_{10}$

Li$_{4}$BN$_{3}$H$_{10}$ is of great interest for hydrogen storage and for lithium-ion battery solid electrolytes because of its high hydrogen content and high lithium-ion conductivity, respectively. The practical hydrogen storage application of this complex hydride is, however, limited due to irreversibility and cogeneration of ammonia (NH$_{3}$) during the decomposition. We report a first-principles density-functional theory study of native point defects and defect complexes in Li$_{4}$BN$_{3}$H$_{10}$, and propose an atomistic mechanism for the material's decomposition that involves mass transport mediated by native defects. In light of this specific mechanism, we argue that the release of NH$_{3}$ is associated with the formation and migration of negatively charged hydrogen vacancies inside the material, and it can be manipulated by the incorporation of suitable electrically active impurities. We also find that Li$_{4}$BN$_{3}$H$_{10}$ is prone to Frenkel disorder on the Li sublattice; lithium vacancies and interstitials are highly mobile and play an important role in mass transport and ionic conduction.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Understanding the electronic and ionic conduction and lithium over-stoichiometry in LiMn$_2$O$_4$ spinel

We report a first-principles study of defect thermodynamics and transport in spinel-type lithium manganese oxide LiMn$_2$O$_4$, an important lithium-ion battery electrode material, using density-functional theory and the Heyd-Scuseria-Ernzerhof screened hybrid functional. We find that intrinsic point defects in LiMn$_2$O$_4$ have low formation energies and hence can occur with high concentrations. The electronic conduction proceeds via hopping of small polarons and the ionic conduction occurs via lithium vacancy and/or interstitialcy migration mechanisms. The total conductivity is dominated by the electronic contribution. LiMn$_2$O$_4$ is found to be prone to lithium over-stoichiometry, i.e., lithium excess at the manganese sites, and Mn$^{3+}$/Mn$^{4+}$ disorder. Other defects such as manganese antisites and vacancies and lithium interstitials may also occur in LiMn$_2$O$_4$ samples. In light of our results, we discuss possible implications of the defects on the electrochemical properties and provide explanations for the experimental observations and guidelines for defect-controlled synthesis and defect characterization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

First-principles studies of the effects of impurities on the ionic and electronic conduction in LiFePO$_{4}$

Olivine-type LiFePO$_{4}$ is widely considered as a candidate for Li-ion battery electrodes, yet its applicability in the pristine state is limited due to poor ionic and electronic conduction. Doping can be employed to enhance the material's electrical conductivity. However, this should be understood as incorporating electrically active impurities to manipulate the concentration of native point defects such as lithium vacancies and small hole polarons which are responsible for ionic and electronic conduction, respectively, and {\it not} as generating band-like carriers. Possible effects of monovalent (Na, K, Cu, and Ag), divalent (Mg and Zn), trivalent (Al), tetravalent (Zr, C, and Si), and pentavalent (V and Nb) impurities on the ionic and electronic conductivities of LiFePO$_{4}$ are analyzed based on results from first-principles density-functional theory calculations. We identify impurities that are effective (or ineffective) at enhancing the concentration of lithium vacancies or small hole polarons. Based on our studies, we discuss specific strategies for enhancing the electrical conductivity in LiFePO$_{4}$ and provide suggestions for further experimental studies.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Impurity clustering and impurity-induced bands in PbTe-, SnTe-, and GeTe-based bulk thermoelectrics

Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great interest for infrared devices and high-temperature thermoelectric applications. A deeper understanding of the atomic and electronic structure of these materials is crucial for explaining, predicting, and optimizing their properties, and to suggest new materials for better performance. In this work, we present our first-principles studies of the energy bands associated with various monovalent (Na, K, and Ag) and trivalent (Sb and Bi) impurities and impurity clusters in PbTe, SnTe, and GeTe using supercell models. We find that monovalent and trivalent impurity atoms tend to come close to one another and form impurity-rich clusters, and the electronic structure of the host materials is strongly perturbed by the impurities. There are impurity-induced bands associated with the trivalent impurities that split off from the conduction-band bottom with large shifts towards the valence-band top. This is due to the interaction between the $p$ states of the trivalent impurity cation and the divalent anion which tends to drive the systems towards metallicity. The introduction of monovalent impurities (in the presence of trivalent impurities) significantly reduces (in PbTe and GeTe) or slightly enhances (in SnTe) the effect of the trivalent impurities. One, therefore, can tailor the band gap and band structure near the band gap (hence transport properties) by choosing the type of impurity and its concentration or tuning the monovalent/trivalent ratio. Based on the calculated band structures, we are able to explain qualitatively the measured transport properties of the whole class of PbTe-, SnTe-, and GeTe-based bulk thermoelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Formation and migration of native defects in NaAlH$_4$

We present a first-principles study of native defects in NaAlH$_4$. Our analysis indicates that the structure and energetics of these defects can be interpreted in terms of elementary building blocks, which include $V_{\rm{AlH_4}}^+$, $V_{\rm{Na}}^-$, $V_{\rm{H}}^+$, H$_i^-$, and (H$_2$)$_i$. We also calculate migration barriers for several key defects, in order to compare enthalpies of diffusion to experimentally measured activation energies of desorption. From this, we estimate activation energies for diffusion of defects and defect pairs. We suggest that $V_{\rm{AlH_4}}^+$ and H$_i^-$, or $V_{\rm{Na}}^-$ and $V_{\rm{H}}^+$, may be responsible for diffusion necessary for desorption. We discuss the possible role of $V_{\rm{H}}^+$-H$_i^-$ complex formation. The values we find are in the range of activation energies reported for catalyzed desorption.

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