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Chris G. Van de Walle

Chris G. Van de Walle appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.othercond-mat.supr-conphysics.comp-phphysics.optics

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Published work

23 published item(s)

preprint2022arXiv

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN$_2$ and MgSiN$_2$

The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have recently become available, namely ZnGeN$_2$ and MgSiN$_2$. We perform state-of-the-art calculations of the hole mobility of GaN using the ab initio Boltzmann transport equation. We show that effective uniaxial compressive strain of GaN along the $[1\bar{1}00]$ by lattice matching to ZnGeN$_2$ and MgSiN$_2$ results in the inversion of the heavy hole band and split-off hole band, thereby lowering the effective hole mass in the compression direction. We find that lattice matching to ZnGeN$_2$ and MgSiN$_2$ induces an increase of the room-temperature hole mobility by 50% and 260% as compared to unstrained GaN, respectively. Examining the trends as a function of strain, we find that the variation in mobility is highly nonlinear; lattice matching to a hypothetical solid solution of Zn$_{0.75}$Ge$_{0.75}$Mg$_{0.25}$Si$_{0.25}$N$_2$ would already increase the hole mobility by 160%.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

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preprint2020arXiv

Electronic structure and magneto-optical properties of silicon-nitrogen-vacancy complexes in diamond

The silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers in diamond are commonly regarded as prototypical defects for solid-state quantum information processing. Here we show that when silicon and nitrogen are simultaneously introduced into the diamond lattice these defects can strongly interact and form larger complexes. Nitrogen atoms strongly bind to Si and SiV centers and complex formation can occur. Using a combination of hybrid density functional theory (DFT) and group theory, we analyze the electronic structure and provide various useful physical properties, such as hyperfine structure, quasi-local vibrational modes, and zero-phonon line, to enable experimental identification of these complexes. We demonstrate that the presence of substitutional silicon adjacent to nitrogen significantly shifts the donor level toward the conduction band, resulting in an activation energy for the SiN center that is comparable to phosphorus. We also find that the neutral SiNV center is of particular interest due to its photon emission at $\sim$1530 nm, which falls within the C band of telecom wavelengths, and its paramagnetic nature. In addition, the optical transition associated with the SiNV$^0$ color center exhibits very small electron--phonon coupling (Huang--Rhys factor~=~0.78) resulting in high quantum efficiency (Debye-Waller factor = 46\%) for single-photon emission. These features render this new center very attractive for potential application in scalable quantum telecommunication networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Radiative capture rates at deep defects from electronic structure calculations

We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density functional theory. Calculations of capture coefficients provide an additional validation of the accuracy of these functionals in dealing with localized defect states. We also discuss the validity of the Condon approximation, showing that even in the event of large lattice relaxations the approximation is accurate. We test the method on GaAs:$V_\text{Ga}$-$\text{Te}_\text{As}$ and GaN:C$_\text{N}$, for which reliable experiments are available, and demonstrate very good agreement with measured capture coefficients.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of the transition, the mechanisms by which such recombination can take place in wide-band-gap materials are unclear. Using electronic structure calculations we uncover the crucial role of electronic excited states in nonradiative recombination processes. The impact is elucidated with examples for the group-III nitrides, for which accumulating experimental evidence indicates that defect-assisted recombination limits efficiency. Our work provides new insights into the physics of nonradiative recombination, and the mechanisms are suggested to be ubiquitous in wide-band-gap semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Structural investigation of the bilayer iridate Sr3Ir2O7

A complete structural solution of the bilayer iridate compound Sr3Ir2O7 presently remains outstanding. Previously reported structures for this compound vary and all fail to explain weak structural violations observed in neutron scattering measurements as well as the presence of a net ferromagnetic moment in the basal plane. In this paper, we present single crystal neutron diffraction and rotational anisotropy second harmonic generation measurements unveiling a lower, monoclinic symmetry inherent to Sr3Ir2O7 . Combined with density functional theory, our measurements identify the correct structural space group as No. 15 (C2/c) and provide clarity regarding the local symmetry of Ir 4+ cations within this spin-orbit Mott material.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. The knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

First-principles calculations of indirect Auger recombination in nitride semiconductors

Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism such as the electron-phonon interaction. Phonon-assisted Auger recombination is particularly strong in nitride materials and affects the efficiency of nitride optoelectronic devices at high powers. Here we present a first-principles computational formalism for the study of direct and indirect Auger recombination in direct-band-gap semiconductors and apply it to the case of nitride materials. We show that direct Auger recombination is weak in the nitrides and cannot account for experimental measurements. On the other hand, carrier scattering by phonons and alloy disorder enables indirect Auger processes that can explain the observed loss in devices. We analyze the dominant phonon contributions to the Auger recom- bination rate and the influence of temperature and strain on the values of the Auger coefficients. Auger processes assisted by charged-defect scattering are much weaker than the phonon-assisted ones for realistic defect densities and not important for the device performance. The computational formalism is general and can be applied to the calculation of the Auger coefficient in other classes of optoelectronic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tuning bad metal and non-Fermi liquid behavior in a Mott material: rare earth nickelate thin films

Resistances that exceed the Mott-Ioffe-Regel limit, known as bad metal behavior, and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. Here we establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO3, which exhibits a prototype, bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of the Ni eg orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to non-Fermi liquid metal phase and provide a predictive criterion for strong localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-principles study of the mobility of SrTiO$_3$

We investigate the electronic and vibrational spectra of SrTiO$_3$, as well as the coupling between them, using first-principles calculations. We compute electron-phonon scattering rates for the three lowest-energy conduction bands and use Boltzmann transport theory to calculate the room-temperature mobility of SrTiO$_3$. The results agree with experiment and highlight the strong impact of longitudinal optical phonon scattering. Our analysis provides important insights into the key factors that determine room temperature mobility, such as the number of conduction bands and the nature and frequencies of longitudinal phonons. Such insights provide routes to engineering materials with enhanced mobilities.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-principles theory of nonradiative carrier capture via multiphonon emission

We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including electron-phonon coupling matrix elements, are computed consistently using state-of-the-art electronic structure techniques based on hybrid density functional theory. These provide a significantly improved description of bulk band structures, as well as defect geometries and wavefunctions. In order to properly describe carrier capture processes at charged centers, we put forward an approach to treat the effect of long-range Coulomb interactions on scattering states in the framework of supercell calculations. We also discuss the choice of initial conditions for a perturbative treatment of carrier capture. As a benchmark, we apply our theory to several hole-capturing centers in GaN and ZnO, materials of high technological importance in which the role of defects is being actively investigated. Calculated hole capture coefficients are in good agreement with experimental data. We discuss the insights gained into the physics of defects in wide-band-gap semiconductors, such as the strength of electron-phonon coupling and the role of different phonon modes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre

In this work we present theoretical calculations and analysis of the vibronic structure of the spin-triplet optical transition in diamond nitrogen-vacancy centres. The electronic structure of the defect is described using accurate first-principles methods based on hybrid functionals. We devise a computational methodology to determine the coupling between electrons and phonons during an optical transition in the dilute limit. As a result, our approach yields a smooth spectral function of electron-phonon coupling and includes both quasi-localized and bulk phonons on equal footings. The luminescence lineshape is determined via the generating function approach. We obtain a highly accurate description of the luminescence band, including all key parameters such as the Huang-Rhys factor, the Debye-Waller factor, and the frequency of the dominant phonon mode. More importantly, our work provides insight into the vibrational structure of nitrogen vacancy centres, in particular the role of local modes and vibrational resonances. In particular, we find that the pronounced mode at 65 meV is a vibrational resonance, and we quantify localization properties of this mode. These excellent results for the benchmark diamond nitrogen-vacancy centre provide confidence that the procedure can be applied to other defects, including alternative systems that are being considered for applications in quantum information processing.

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preprint2014arXiv

Interband and polaronic excitations in YTiO3 from first principles

YTiO3, as a prototypical Mott insulator, has been the subject of numerous experimental investigations of its electronic structure. The onset of absorption in optical conductivity measurements has generally been interpreted to be due to interband transitions at the fundamental gap. Here we re-examine the electronic structure of YTiO3 using density functional theory with either a Hubbard correction (DFT+U) or a hybrid functional. Interband transitions turn out to be much higher in energy than the observed onset of optical absorption. However, in case of $p$-type doping, holes tend to become self-trapped in the form of small polarons, localized on individual Ti sites. Exciting electrons from the occupied lower Hubbard band to the small-polaron state then leads to broad infrared absorption, consistent with the onset in the experimental optical conductivity spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

LiH as a Li$^+$ and H$^-$ ion provider

We present a first-principles study of the formation and migration of native defects in lithium hydride (LiH), a material of interest in hydrogen storage and lithium-ion batteries. We find that the negatively charged lithium vacancy and positively charged hydrogen vacancy are the dominant defects in LiH with a formation energy of about 0.85 eV. With this low energy, LiH can be a good provider of Li$^+$ and/or H$^-$ ions. Based on our results, we discuss the role of LiH in its reactions with another reactant which are important in hydrogen storage and lithium-ion batteries, and explain the ionic conductivity and hydrogen surface loss as observed in experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mechanism for the decomposition of lithium borohydride

We report first-principles density functional theory studies of native defects in lithium borohydride (LiBH$_{4}$), a potential material for hydrogen storage. Based on our detailed analysis of the structure, energetics, and migration of lithium-, boron-, and hydrogen-related defects, we propose a specific mechanism for the decomposition and dehydrogenation of LiBH$_{4}$ that involves mass transport mediated by native defects. In this mechanism, LiBH$_{4}$ releases borane (BH$_{3}$) at the surface or interface, leaving the negatively charged hydrogen interstitial (H$_{i}^{-}$) in the material, which then acts as the nucleation site for LiH formation. The diffusion of H$_{i}^{-}$ in the bulk LiBH$_{4}$ is the rate-limiting step in the decomposition kinetics. Lithium vacancies and interstitials have low formation energies and are highly mobile. These defects are responsible for maintaining local charge neutrality as other charged defects migrating along the material, and assisting in the formation of LiH. In light of this mechanism, we discuss the effects of metal additives on hydrogen desorption kinetics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mechanisms for the decomposition and dehydrogenation of Li amide/imide

Reversible reaction involving Li amide (LiNH$_{2}$) and Li imide (Li$_{2}$NH) is a potential mechanism for hydrogen storage. Recent synchrotron x-ray diffraction experiments [W. I. David et al., J. Am. Chem. Soc. 129, 1594 (2007)] suggest that the transformation between LiNH$_{2}$ and Li$_{2}$NH is a bulk reaction that occurs through non-stoichiometric processes and involves the migration of Li$^{+}$ and H$^{+}$ ions. In order to understand the atomistic mechanisms behind these processes, we carry out comprehensive first-principles studies of native point defects and defect complexes in the two compounds. We find that both LiNH$_{2}$ and Li$_{2}$NH are prone to Frenkel disorder on the Li sublattice. Lithium interstitials and vacancies have low formation energies and are highly mobile, and therefore play an important role in mass transport and ionic conduction. Hydrogen interstitials and vacancies, on the other hand, are responsible for forming and breaking N$-$H bonds, which is essential in the Li amide/imide reaction. Based on the structure, energetics, and migration of hydrogen-, lithium-, and nitrogen-related defects, we propose that LiNH$_{2}$ decomposes into Li$_{2}$NH and NH$_{3}$ according to two competing mechanisms with different activation energies: one mechanism involves the formation of native defects in the interior of the material, the other at the surface. As a result, the prevailing mechanism and hence the effective activation energy for decomposition depend on the surface-to-volume ratio or the specific surface area, which changes with particle size during ball milling. These mechanisms also provide an explanation for the dehydrogenation of LiNH$_{2}$+LiH mixtures.

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preprint2014arXiv

The role of native defects in the transport of charge and mass and the decomposition of Li$_{4}$BN$_{3}$H$_{10}$

Li$_{4}$BN$_{3}$H$_{10}$ is of great interest for hydrogen storage and for lithium-ion battery solid electrolytes because of its high hydrogen content and high lithium-ion conductivity, respectively. The practical hydrogen storage application of this complex hydride is, however, limited due to irreversibility and cogeneration of ammonia (NH$_{3}$) during the decomposition. We report a first-principles density-functional theory study of native point defects and defect complexes in Li$_{4}$BN$_{3}$H$_{10}$, and propose an atomistic mechanism for the material's decomposition that involves mass transport mediated by native defects. In light of this specific mechanism, we argue that the release of NH$_{3}$ is associated with the formation and migration of negatively charged hydrogen vacancies inside the material, and it can be manipulated by the incorporation of suitable electrically active impurities. We also find that Li$_{4}$BN$_{3}$H$_{10}$ is prone to Frenkel disorder on the Li sublattice; lithium vacancies and interstitials are highly mobile and play an important role in mass transport and ionic conduction.

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preprint2013arXiv

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

We present a theoretical study of broadening of defect luminescence bands due to vibronic coupling. Numerical proof is provided for the commonly used assumption that a multi-dimensional vibrational problem can be mapped onto an effective one-dimensional configuration coordinate diagram. Our approach is implemented based on density functional theory with a hybrid functional, resulting in luminescence lineshapes for important defects in GaN and ZnO that show unprecedented agreement with experiment. We find clear trends concerning effective parameters that characterize luminescence bands of donor- and acceptor-type defects, thus facilitating their identification.

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preprint2013arXiv

Structural origins of the properties of rare earth nickelate superlattices

NiO6 octahedral tilts in the LaNiO3/SrTiO3 superlattices are quantified using position averaged convergent beam electron diffraction in scanning transmission electron microscopy. It is shown that maintaining oxygen octahedra connectivity across the interface controls the octahedral tilts in the LaNiO3 layers, their lattice parameters and their transport properties. Unlike films and layers that are connected on one side to the substrate, subsequent LaNiO3 layers in the superlattice exhibit a relaxation of octahedral tilts towards bulk values. This relaxation is facilitated by correlated tilts in SrTiO3 layers and is correlated with the conductivity enhancement of the LaNiO3 layers in the superlattices relative to individual films.

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preprint2012arXiv

Phonon-assisted optical absorption in silicon from first principles

The phonon-assisted interband optical absorption spectrum of silicon is calculated at the quasiparticle level entirely from first principles. We make use of the Wannier interpolation formalism to determine the quasiparticle energies, as well as the optical transition and electron-phonon coupling matrix elements, on fine grids in the Brillouin zone. The calculated spectrum near the onset of indirect absorption is in very good agreement with experimental measurements for a range of temperatures. Moreover, our method can accurately determine the optical absorption spectrum of silicon in the visible range, an important process for optoelectronic and photovoltaic applications that cannot be addressed with simple models. The computational formalism is quite general and can be used to understand the phonon-assisted absorption processes in general.

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preprint2011arXiv

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained.

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preprint2009arXiv

Auger recombination rates in nitrides from first principles

We report Auger recombination rates for wurtzite InGaN calculated from first principles density-functional and many-body-perturbation theory. Two different mechanisms are examined -- inter- and intra-band recombination -- that affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient can be as large as 2x10^-30cm^6s^-1; in the infrared even larger. Since Auger recombination scales with the cubic power of the free-carrier concentration it becomes an important non-radiative loss mechanism at high current densities. Our results indicate that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters.

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preprint2009arXiv

Formation and migration of native defects in NaAlH$_4$

We present a first-principles study of native defects in NaAlH$_4$. Our analysis indicates that the structure and energetics of these defects can be interpreted in terms of elementary building blocks, which include $V_{\rm{AlH_4}}^+$, $V_{\rm{Na}}^-$, $V_{\rm{H}}^+$, H$_i^-$, and (H$_2$)$_i$. We also calculate migration barriers for several key defects, in order to compare enthalpies of diffusion to experimentally measured activation energies of desorption. From this, we estimate activation energies for diffusion of defects and defect pairs. We suggest that $V_{\rm{AlH_4}}^+$ and H$_i^-$, or $V_{\rm{Na}}^-$ and $V_{\rm{H}}^+$, may be responsible for diffusion necessary for desorption. We discuss the possible role of $V_{\rm{H}}^+$-H$_i^-$ complex formation. The values we find are in the range of activation energies reported for catalyzed desorption.

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