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K. Iwaya

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Published work

3 published item(s)

preprint2015arXiv

Bipartite electronic superstructures in the vortex core of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$

A magnetic field applied to type-II superconductors introduces quantized vortices that locally quench superconductivity, providing a unique opportunity to investigate electronic orders that may compete with superconductivity. This is especially true in cuprate superconductors in which mutual relationships among superconductivity, pseudogap, and broken-spatial-symmetry states have attracted much attention. Here we observe energy and momentum dependent bipartite electronic superstructures in the vortex core of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ using spectroscopic-imaging scanning tunneling microscopy (SI-STM). In the low-energy range where the nodal Bogoliubov quasiparticles are well-defined, we show that the quasiparticle scattering off vortices generates the electronic superstructure known as "vortex checkerboard". In the high-energy region where the pseudogap develops, vortices amplify the broken-spatial-symmetry patterns that preexist in zero field. These data reveal canonical d-wave superconductivity near the node, yet competition between superconductivity and broken-spatial-symmetry states near the antinode.

preprint2013arXiv

Half-filled orbital and unconventional geometry of a common dopant in Si(001)

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons and have highly localized, half-filled orbitals.

preprint2012arXiv

Observation of momentum space semi-localization in Si-doped $β$-Ga$_2$O$_3$

We performed an angle-resolved photoemission spectroscopy study of Si-doped $β$-Ga$_2$O$_3$. We observed very small photoemission intensity near the Fermi level corresponding to non-dispersive states assigned to Si impurities. We show evidence for a quantization of these states that is accompanied by a confinement in the momentum space consistent with a real-space finite confinement observed in a previous scanning tunneling microscopy study. Our results suggest that this semi-localization in the conjugate spaces plays a crucial role in the electronic conduction of this material.