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Researcher profile

Ch. Renner

Ch. Renner contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.soft

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Published work

6 published item(s)

preprint2015arXiv

STM microscopy of the CDW in 1T-TiSe2 in the presence of single atom defects

We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic analysis of STM micrographs combined with density functional theory modelling of atomic defect patterns indicate that the observed CDW modulation lies in the Se surface layer. The defect patterns clearly show there are no 2$H$-polytype inclusions in the CDW phase, as previously found at room temperature [Titov A.N. et al, Phys. Sol. State 53, 1073 (2011). They further provide an alternative explanation for the chiral Friedel oscillations recently reported in this compound [J. Ishioka et al., Phys. Rev. B 84, 245125, (2011)].

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preprint2013arXiv

Half-filled orbital and unconventional geometry of a common dopant in Si(001)

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons and have highly localized, half-filled orbitals.

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preprint2012arXiv

Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa

The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $\approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicted limit of $\approx 4.5$ without any significant saturation, even at 3 GPa. Calculation of $G/G_0$ using \textit{ab-initio} density functional theory reveals that neither $G$ nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.

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preprint2011arXiv

Endotaxial Si nanolines in Si(001):H

We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

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preprint2008arXiv

Giant room temperature piezoresistance in a metal/silicon hybrid

Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This piezoresistance boost is not due to the silicon/aluminum interface, but results from a stress induced anisotropy in the silicon conductivity that acts to switch current away from the highly conductive aluminum for uniaxial tensile strains. Its magnitude is shown, via the calculation of hybrid resistivity weighting functions, to depend only on the geometrical arrangement of the component parts of the hybrid.

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preprint2004arXiv

Yakhot's model of strong turbulence: A generalization of scaling models of turbulence

We report on some implications of the theory of turbulence developed by V. Yakhot [V. Yakhot, Phys. Rev. E {\bf 57}(2) (1998)]. In particular we focus on the expression for the scaling exponents $ζ_{n}$. We show that Yakhot's result contains three well known scaling models as special cases, namely K41, K62 and the theory by V. L'vov and I. Procaccia [V. L'vov & I. Procaccia, Phys. Rev. E {\bf 62}(6) (2000)]. The model furthermore yields a theoretical justification for the method of extended self--similarity (ESS).

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