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A. Ferreira da Silva

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cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.mes-hall

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preprint2020arXiv

Heavily $n$-doped Ge: low-temperature magnetoresistance properties

We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications

preprint2013arXiv

Half-filled orbital and unconventional geometry of a common dopant in Si(001)

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons and have highly localized, half-filled orbitals.

preprint2010arXiv

Ferromagnetism in Dilute Magnetic Semiconductors

We study the ferromagnetism of Ga1-xMnxAs by using a model Hamiltonian, based on an impurity band and the anti-ferromagnetic exchange interaction between the spins of Mn atoms and the charge carriers in the impurity band. Based on the mean field approach we calculate the spontaneous magnetization as a function of temperature and the ferromagnetic transition temperature as a function of the Mn concentration. The random distribution of Mn impurities is taken into account by Matsubara and Toyozawa theory of impurities in semiconductors. We compare our results with experiments and other theoretical findings.