Source author record

A. J. Fisher

A. J. Fisher appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

5works
5topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2025arXiv

Materials for Quantum Technologies: a Roadmap for Spin and Topology

In this Perspective article, we explore some of the promising spin and topology material platforms (e.g. spins in semi- and superconductors, skyrmionic, topological and 2D materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, simple initiation and read-out. However, the relevant technologies are at different stages of research and development, and here we discuss their state-of-the-art, potential applications, challenges and solutions.

preprint2020arXiv

A linear combination of atomic orbitals (LCAO) model for deterministically placed acceptor arrays in silicon

We develop a tight-binding model based on linear combination of atomic orbitals (LCAO) methods to describe the electronic structure of arrays of acceptors, where the underlying basis states are derived from an effective-mass-theory solution for a single acceptor in either the spherical approximation or the cubic model. Our model allows for arbitrarily strong spin-orbit coupling in the valence band of the semiconductor. We have studied pairs and dimerised linear chains of acceptors in silicon in the `independent-hole' approximation, and investigated the conditions for the existence of topological edge states in the chains. For the finite chain we find a complex interplay between electrostatic effects and the dimerisation, with the long-range Coulomb attraction of the hole to the acceptors splitting off states localised at the end acceptors from the rest of the chain. A further pair of states then splits off from each band, to form a pair localised on the next-to-end acceptors, for one sense of the bond alternation and merges into the bulk bands for the other sense of the alternation. We confirm the topologically non-trivial nature of these next-to-end localised states by calculating the Zak phase. We argue that for the more physically accessible case of one hole per acceptor these long-range electrostatic effects will be screened out; we show this by treating a simple phenomenologically screened model in which electrostatic contributions from beyond the nearest neighbours of acceptor each pair are removed. Topological states are now found on the end acceptors of the chains. In some cases the termination of the chain required to produce topological states is not the one expected on the basis of simple geometry (short versus long bonds); we argue this is because of a non-monotonic relationship between the bond length and the effective Hamiltonian matrix elements between the acceptors.

preprint2013arXiv

Half-filled orbital and unconventional geometry of a common dopant in Si(001)

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons and have highly localized, half-filled orbitals.

preprint2013arXiv

Switching and propagation of magneto-plasmon-polaritons in magnetic slot waveguides and cavities

The dispersion relations for surface plasmon-polaritons propagating in the Voigt geometry in a metal-insulator-metal waveguide with a magneto-optically active dielectric medium are derived. The symmetry between the upper and lower interfaces is broken by the introduction of the magnetic field; the balance between the field distributions on the two interfaces can be controlled by the applied field. This control is illustrated by finite-element method numerical simulations of the field distributions around a point dipole placed in the centre of the short waveguide; it is shown that both the total emission of radiation from the cavity and the distribution of the far-field radiation can be strongly modified by tuning the magnetisation of the waveguide. This raises the novel possibility of using magnetic fields to control light propagation in nanostructures.

preprint2010arXiv

Contribution of spin pairs to the magnetic response in a dilute dipolar ferromagnet

We simulate the dc magnetic response of the diluted dipolar-coupled Ising magnet LiHo\(_{0.045}\)Y\(_{0.955}\)F\(_4\) in a transverse field, using exact diagonalization of a two-spin Hamiltonian averaged over nearest-neighbour configurations. The pairwise model, incorporating hyperfine interactions, accounts for the observed drop-off in the longitudinal (c-axis) susceptibility with increasing transverse field; with the inclusion of a small tilt in the transverse field, it also accounts for the behavior of the off-diagonal magnetic susceptibility. The hyperfine interactions do not appear to lead to qualitative changes in the pair susecptibilities, although they do renormalize the crossover fields between different regimes. Comparison with experiment indicates that antiferromagnetic correlations are more important than anticipated based on simple pair statistics and our first-principles calculations of the pair response. This means that larger clusters will be needed for a full description of the reduction in the diagonal response at small transverse fields.