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K. Asokan

K. Asokan contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Wind speed forecast using random forest learning method

Wind speed forecasting models and their application to wind farm operations are attaining remarkable attention in the literature because of its benefits as a clean energy source. In this paper, we suggested the time series machine learning approach called random forest regression for predicting wind speed variations. The computed values of mutual information and auto-correlation shows that wind speed values depend on the past data up to 12 hours. The random forest model was trained using ensemble from two weeks data with previous 12 hours values as input for every value. The computed root mean square error shows that model trained with two weeks data can be employed to make reliable short-term predictions up to three years ahead.

preprint2021arXiv

Low temperature ferromagnetism in perovskite SrIrO$_3$ films

The 5$d$ based SrIrO$_3$ represents prototype example of nonmagnetic correlated metal which mainly originates from a combined effect of spin-orbit coupling, lattice dimensionality and crystal structure. Therefore, tuning of these parameters results in diverse physical properties in this material. Here, we study the structural, magnetic and electrical transport behavior in epitaxial SrIrO$_3$ film ($\sim$ 40 nm) grown on SrTiO$_3$ substrate. Opposed to bulk material, the SrIrO$_3$ film exhibits a ferromagnetic ordering at low temperature below $\sim$ 20 K. The electrical transport data indicate an insulating behavior where the nature of charge transport follows Mott&#39;s variable-range-hopping model. A positive magnetoresistance is recorded at 2 K which has correlation with magnetic moment. We further observe a nonlinear Hall effect at low temperature ($<$ 20 K) which arises due to an anomalous component of Hall effect. An anisotropic behavior of both magnetoresistance and Hall effect has been evidenced at low temperature which coupled with anomalous Hall effect indicate the development of ferromagnetic ordering. We believe that an enhanced (local) structural distortion caused by lattice strain at low temperatures induces ferromagnetic ordering, thus showing structural instability plays vital role to tune the physical properties in SrIrO$_3$.

preprint2020arXiv

Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization

The $f$-$d$ magnetic exchange interaction is considered to be a key ingredient for many exotic topological phases in pyrochlore iridates. Here, we have investigated the evolution of structural, magnetic and electronic properties in doped pyrochlore iridate, (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$. Apart from geometrical frustration, pyrochlore iridates are well known for its active spin-orbit coupling effect. The substitution of Pr$^{3+}$ (4$f^2$) for the nonmagnetic Y$^{3+}$ (4$d^0$) acts as a magnetic doping, which provides an ideal platform to study $f$-$d$ exchange interaction without altering the Ir-sublattice. With Pr substitution, system retains its original cubic structural symmetry but the local structural parameters show an evolution with the doping concentration $x$. The robust magnetic-insulating state in Y$_2$Ir$_2$O$_7$ is drastically weakened, while Pr$_2$Ir$_2$O$_7$ ($x$ = 1.0) shows a paramagnetic-metallic behavior. A metal-insulator transition is observed for $x$ = 0.8 sample. This evolution of magnetic and electronic properties are believed to be induced by an exchange interaction between localized Pr-4$f$ and itinerant Ir-5$d$ electrons as well as by an increased hybridization between Ir-$t_{2g}$ and (basal) O-$p$ orbitals as observed in XAS study. The resistivity in insulating materials follows a power-law behavior with a decreasing exponent with $x$. A negative magnetoresistance is observed for present series of samples at low temperature and where the magnetoresistance shows a quadratic field dependence at higher fields.

preprint2020arXiv

Thermoelectric Properties of GaN with Carrier Concentration Modulation: An Experimental and Theoretical Investigation

The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally measured in the wide temperature range from 77 K to 650 K in steps of ~10 K covering both low and high-temperature regimes as a function of carrier concentration 2 x1016, 2 x 1017, 4 x 1017 and 8 x 1017 cm-3. The measured Seebeck coefficient at room temperature was found to be highest, -374 microV/K, at the lowest concentration of 4 x 1016 cm-3 and decreases in magnitude monotonically (-327.6 microV/K, -295 microV/K, -246 microV/K for 2 x 1017, 4 x 1017, 8 x 1017 cm-3, respectively) as the carrier concentration of samples increases. Seebeck coefficient remains negative in the entire temperature range under study indicate that electrons are dominant carriers. To understand the temperature-dependent behavior, we have also carried out the electronic structure, and transport coefficients calculations by using Tran-Blaha modified Becke-Johnson (TB-mBJ) potential, and semiclassical Boltzmann transport theory implemented in WIEN2k and BoltzTraP code, respectively. The experimentally observed carrier concentrations were used in the calculations. The estimated results obtained under constant relaxation time approximations provide a very good agreement between theoretical and experimental data of Seebeck coefficients in the temperature range of 260 to 625 K.

preprint2020arXiv

Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of \b{eta}-Ga2O3 single crystals

Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).