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D. Kanjilal

D. Kanjilal appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scinucl-excond-mat.dis-nncond-mat.softcond-mat.str-elphysics.ins-det

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Published work

12 published item(s)

preprint2022arXiv

Exploring the effect of varying regime of ion fluence on optical and surface electronic properties of CVD Grown Graphene

In this work, the effect of the ion fluence-dependent defect formation on the modification of surface electronic and optical properties of graphene has been investigated. The chemical vapor deposited (CVD) graphene was irradiated with swift heavy ion (SHI) (70 MeV Si+5) beam at different fluence to study the defect formation mechanism and the role of it in modulating its surface electronic property such as work function. At low ion dose, acceptor doping via vacancy creation was observed; whereas dense electronic excitation dominated extended defects was realized at higher dose, which subsequently transforms the crystalline graphene into amorphous carbon. The results from UV-Vis spectroscopy, Raman spectroscopy and scanning Kelvin probe microscopy (SKPM) support the fact. Thus a new pathway of transformation of graphene under SHI irradiation was explored where ion dose could be the main factor to realize several effects in graphene.

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preprint2022arXiv

High spin states of $^{204}$At: isomeric states and shears band structure

High-spin states of neutron deficient Trans-Lead nucleus $^{204}$At were populated up to $\sim 8\,{\rm MeV}$ excitation through the $^{12}$C + $^{197}$Au fusion evaporation reaction. Decay of the associated levels through prompt and delayed $γ$-ray emissions were studied to evaluate the underlying nuclear structure. The level scheme, which was partly known, was extended further. An isomeric $16^+$ level with observed lifetime $τ=52 \pm 5\, {\rm ns}$, was established from our measurements. Attempts were made to interpret the excited states based on multi quasiparticle and hole structures involving $2f_{5/2}$, $1h_{9/2}$, and $1i_{13/2}$ shell model states, along with moderate core excitation. Magnetic dipole band structure over the spin parity range:~$16^+ - 23^+$ was confirmed and evaluated in more detail, including the missing cross-over $E2$ transitions. Band-crossing along the shears band was observed and compared with the evidence of similar phenomena in the neighbouring neutron deficient $^{202}$Bi, $^{205}$Rn isotones and the $^{203}$At isotope. Based on comparison of the measured $B(M1)/B(E2)$ values for transitions along the band with the semiclassical model based estimates, the shears band of $^{204}$At was established along with the level scheme.

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preprint2020arXiv

Thermoelectric Properties of GaN with Carrier Concentration Modulation: An Experimental and Theoretical Investigation

The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally measured in the wide temperature range from 77 K to 650 K in steps of ~10 K covering both low and high-temperature regimes as a function of carrier concentration 2 x1016, 2 x 1017, 4 x 1017 and 8 x 1017 cm-3. The measured Seebeck coefficient at room temperature was found to be highest, -374 microV/K, at the lowest concentration of 4 x 1016 cm-3 and decreases in magnitude monotonically (-327.6 microV/K, -295 microV/K, -246 microV/K for 2 x 1017, 4 x 1017, 8 x 1017 cm-3, respectively) as the carrier concentration of samples increases. Seebeck coefficient remains negative in the entire temperature range under study indicate that electrons are dominant carriers. To understand the temperature-dependent behavior, we have also carried out the electronic structure, and transport coefficients calculations by using Tran-Blaha modified Becke-Johnson (TB-mBJ) potential, and semiclassical Boltzmann transport theory implemented in WIEN2k and BoltzTraP code, respectively. The experimentally observed carrier concentrations were used in the calculations. The estimated results obtained under constant relaxation time approximations provide a very good agreement between theoretical and experimental data of Seebeck coefficients in the temperature range of 260 to 625 K.

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preprint2020arXiv

Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of \b{eta}-Ga2O3 single crystals

Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).

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preprint2015arXiv

Enhanced Photoabsorption from Cobalt Implanted Rutile TiO2 (110) Surfaces

Present study investigates the photoabsorption properties of single crystal rutile TiO2 (110) surfaces after they have been implanted with low fluence of Cobalt ions. The surfaces, after implantation, demonstrate fabrication of nanostructures and anisotropic nano-ripple patterns. Creation of oxygen vacancies (Ti3+ states) as well as band gap modification for these samples is also observed. Results presented here demonstrate that fabrication of self organized nanostructures and development of oxygen vacancies, upon cobalt implantation, promote the enhancement of photoabsorbance in both UV (2 times) and visible (5 times) regimes. These investigations on nanostructured TiO2 surfaces can be important for photo- catalysis.

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preprint2014arXiv

Au9+ swift heavy ion irradiation of Zn[CS(NH2)2]3SO4 crystal: Crystalline perfection and optical properties

The single crystal of tris(thiourea)zinc sulphate (Zn[CS(NH2)2]3SO4) was irradiated by 150 MeV Au9+ swift heavy ions and analyzed in comparison with pure crystal for crystalline perfection and optical properties. The Fourier transform infrared and x-ray powder diffraction inferred that swift ions lead the disordering and breaking of molecular bonds in lattice without formation of new structural phases. High resolution X-ray diffraction (HRXRD) revealed the abundance of point defects, and formation of mosaics and low angle grain boundaries in the irradiated region of crystal. The swift ion irradiation found to affect the lattice vibrational modes and functional groups significantly. The defects induced by heavy ions act as the color centers and resulted in enhance of photoluminescence emission intensity. The optical transparency and band gap found to be decreased.

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preprint2014arXiv

Characterization of neutron transmutation doped (NTD) Ge for low temperature sensor development

Development of NTD Ge sensors has been initiated for low temperature (mK) thermometry in The India-based Tin detector (TIN.TIN). NTD Ge sensors are prepared by thermal neutron irradiation of device grade Ge samples at Dhruva reactor, BARC, Mumbai. Detailed measurements have been carried out in irradiated samples for estimating the carrier concentration and fast neutron induced defects. The Positron Annihilation Lifetime Spectroscopy (PALS) measurements indicated monovacancy type defects for all irradiated samples, while Channeling studies employing RBS with 2 MeV alpha particles, revealed no significant defects in the samples exposed to fast neutron fluence of $\sim 4\times10^{16}/cm^2$. Both PALS and Channeling studies have shown that vacuum annealing at 600 $^\circ$C for $\sim2$ hours is sufficient to recover the damage in the irradiated samples, thereby making them suitable for the sensor development.

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preprint2014arXiv

Hydro-dynamics of surface patterning by ion beam irradiation: an interface phenomenon

We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern at the a/c interface as well as at the free surface. The ion beam impact generated erosion and mass redistribution at the free surface are found to have insignificant effect in patterning of surface. By varying the thicknesses of amorphous layer, it has been established that a/c interface plays the dominant role in surface patterning. The morphological variation of Si surface after 50 keV Ar+ ion bombardment has been investigated by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (X-TEM) as a function of ion fluence. Navier-Stokes flow inside the amorphous layer coupled with the Exner equation successfully explains the growth mechanism of surface patterning.

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preprint2013arXiv

Ion beam generated surface ripples: new insight in the underlying mechanism

A new hydrodynamic mechanism is proposed for the ion beam induced surface patterning on solid surfaces. Unlike the standard mechanisms based on the ion beam impact generated erosion and mass redistribution at the free surface (proposed by Bradley-Harper (BH) and its extended theories), the new mechanism proposes that the ion beam induced saltation and creep processes, coupled with incompressible solid flow in amorphous layer, leads to the formation of ripple patterns at the amorphous/crystalline (a/c) interface and hence at the free surface. Ion beam stimulated solid flow inside the amorphous layer controls the wavelength, where as the amount of material transported and re-deposited at a/c interface control the amplitude of ripples. The new approach is verified by designed experiments and supported by the discrete simulation method.

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preprint2013arXiv

Magnetic and Electronic Structure study of Fe/MgO/Fe/Co Multilayer Stack Deposited by E-Beam Evaporation

Present work investigates the magnetic and electronic structure of MgO/Fe/MgO/Fe/Co/Au multilayer stack grown on Si(100) substrates by electron beam evaporation method. X-ray diffraction study depicts polycrystalline nature of the multilayers. Results obtained from vibrating sample magnetometry (VSM) and near-edge X-ray absorption fine structure spectra (NEXAFS) at Fe & Co L- and Mg & O K-edges are applied to understand the magnetic and electronic properties of this stack and its interface properties. While the spectral features of Fe L-edge spectrum recorded by surface sensitive total electron yield (TEY) mode shows the formation of FeOx at the Fe/MgO interface, the bulk sensitive total fluorescence yield (TFY), shows Fe in metallic nature. Co L-edge spectrum reveals the presence of metallic nature of cobalt in both TEY and TFY modes. Above results are well correlated with X-ray reflectometry.

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preprint2010arXiv

Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

We report a systematic study on 1.2 MeV Ar^8+ irradiated ZnO by x-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10^16 ions/cm^2. Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 x 10^15 ions/cm^2), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 x 10^15 ions/cm^2 fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 x 10^15 ions/cm^2 fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation.

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preprint2009arXiv

Controlled defects in ZnO by low energy Ar irradiation

We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the initial fluence 1 X 10^15 ions/cm^2 changes the colour of the sample from white to orange while the highest irradiation fluence makes it dark reddish brown that appears as black. Such changes in colour can be correlated with the oxygen vacancy type defects. No significant change in the grain size of the irradiated samples, as revealed from the x-ray diffraction (XRD) line width broadening, has been observed. Increase of surface roughness due to sputtering is clearly visible in scanning electron micrographs (SEM) with highest fluence of irradiation. Room temperature Photoluminescence (PL) spectrum of the unirradiated sample shows intense ultra-violet (UV) emission (~ 3.27 eV) and less prominent defect level emissions (2-3 eV). The overall emission is largely quenched due to initial irradiation fluence. But with increasing fluence UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This indicates increase of donor concentration as well as their mobility due to irradiation. Oxygen vacancies are deep donors in ZnO, but surely they influence the stability of the shallow donors (presumably zinc interstitial related) and vice versa. This is in conformity with recent theoretical calculations.

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