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Researcher profile

D. Kanjilal

D. Kanjilal contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scinucl-ex

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Published work

4 published item(s)

preprint2022arXiv

Exploring the effect of varying regime of ion fluence on optical and surface electronic properties of CVD Grown Graphene

In this work, the effect of the ion fluence-dependent defect formation on the modification of surface electronic and optical properties of graphene has been investigated. The chemical vapor deposited (CVD) graphene was irradiated with swift heavy ion (SHI) (70 MeV Si+5) beam at different fluence to study the defect formation mechanism and the role of it in modulating its surface electronic property such as work function. At low ion dose, acceptor doping via vacancy creation was observed; whereas dense electronic excitation dominated extended defects was realized at higher dose, which subsequently transforms the crystalline graphene into amorphous carbon. The results from UV-Vis spectroscopy, Raman spectroscopy and scanning Kelvin probe microscopy (SKPM) support the fact. Thus a new pathway of transformation of graphene under SHI irradiation was explored where ion dose could be the main factor to realize several effects in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High spin states of $^{204}$At: isomeric states and shears band structure

High-spin states of neutron deficient Trans-Lead nucleus $^{204}$At were populated up to $\sim 8\,{\rm MeV}$ excitation through the $^{12}$C + $^{197}$Au fusion evaporation reaction. Decay of the associated levels through prompt and delayed $γ$-ray emissions were studied to evaluate the underlying nuclear structure. The level scheme, which was partly known, was extended further. An isomeric $16^+$ level with observed lifetime $τ=52 \pm 5\, {\rm ns}$, was established from our measurements. Attempts were made to interpret the excited states based on multi quasiparticle and hole structures involving $2f_{5/2}$, $1h_{9/2}$, and $1i_{13/2}$ shell model states, along with moderate core excitation. Magnetic dipole band structure over the spin parity range:~$16^+ - 23^+$ was confirmed and evaluated in more detail, including the missing cross-over $E2$ transitions. Band-crossing along the shears band was observed and compared with the evidence of similar phenomena in the neighbouring neutron deficient $^{202}$Bi, $^{205}$Rn isotones and the $^{203}$At isotope. Based on comparison of the measured $B(M1)/B(E2)$ values for transitions along the band with the semiclassical model based estimates, the shears band of $^{204}$At was established along with the level scheme.

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preprint2020arXiv

Thermoelectric Properties of GaN with Carrier Concentration Modulation: An Experimental and Theoretical Investigation

The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally measured in the wide temperature range from 77 K to 650 K in steps of ~10 K covering both low and high-temperature regimes as a function of carrier concentration 2 x1016, 2 x 1017, 4 x 1017 and 8 x 1017 cm-3. The measured Seebeck coefficient at room temperature was found to be highest, -374 microV/K, at the lowest concentration of 4 x 1016 cm-3 and decreases in magnitude monotonically (-327.6 microV/K, -295 microV/K, -246 microV/K for 2 x 1017, 4 x 1017, 8 x 1017 cm-3, respectively) as the carrier concentration of samples increases. Seebeck coefficient remains negative in the entire temperature range under study indicate that electrons are dominant carriers. To understand the temperature-dependent behavior, we have also carried out the electronic structure, and transport coefficients calculations by using Tran-Blaha modified Becke-Johnson (TB-mBJ) potential, and semiclassical Boltzmann transport theory implemented in WIEN2k and BoltzTraP code, respectively. The experimentally observed carrier concentrations were used in the calculations. The estimated results obtained under constant relaxation time approximations provide a very good agreement between theoretical and experimental data of Seebeck coefficients in the temperature range of 260 to 625 K.

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preprint2020arXiv

Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of \b{eta}-Ga2O3 single crystals

Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).

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