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Researcher profile

Juhn-Jong Lin

Juhn-Jong Lin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scicond-mat.supr-con

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Published work

11 published item(s)

preprint2022arXiv

Enhanced two-component superconductivity in CoSi2/TiSi2 heterojunctions

We report enhanced two-component superconductivity in (CoSi2/Si)/TiSi2 superconductor/normal-metal (S/N) heterojunctions. An enhanced superconducting transition temperature about twice that of CoSi2 and an upper critical field about 20 times bigger than that of epitaxial CoSi2/Si films were found. The tunneling spectra of three-terminal S/N junctions show pronounced zero-bias conductance peaks (ZBCPs) that signify penetration of odd-frequency, spin-triplet and even-parity Cooper pairs in TiSi2 from triplet dominant pairing in CoSi2/Si driven by symmetry reduction at the CoSi2/Si interface. Both the enhancement of the superconducting transition temperature and the ZBCPs are found to be more pronounced if TiSi2 is made more diffusive.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing Thermally Activated Atomic and Nanocrystalline Defect Motion through Noise Processes in RuO$_2$ Nanowires

The present-day nanodevice dimensions continuously shrink, with the aim to prolong Moore's law. As downsizing meticulously persists, undesirable dynamic defects, which cause low-frequency noise and structural instability, play detrimental roles on limiting the ultimate performance and reliability of miniaturized devices. A good understanding and a meaningful control of the defect kinetics then become fundamental and urgent issues. Here we report observations of thermally activated atomic defect motion as well as nanocrystalline defect motion through electrical noise processes in metallic RuO$_2$ rutile nanowires around room temperature. First, we extract the energy distribution function and the number density of mobile atomic defects (oxygen vacancies). Second, we obtain the geometrical size, grain-boundary bonding strength, and relaxation times of dynamic nanocrystallites. Our results show clearly a powerful probe for effective and noninvasive characterizations of nanostructures and nanomaterials for which quantitative information about mechanical hardness, breakdown current density, and/or resistance noise is essential.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron-electron scatttering in Sn-doped indium oxide thick films

We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/τ_φ$ as a function of $T$ for each film was extracted by comparing the MR data with the three-dimensional (3D) weak-localization theoretical predictions. We found that the extracted $1/τ_φ$ varies linearly with $T^{3/2}$. Furthermore, at a given $T$, $1/τ_φ$ varies linearly with $k_F^{-5/2}l^{-3/2}$, where $k_{F}$ is the Fermi wavenumber, and $l$ is the electron elastic mean free path. These features are well explained in terms of the small-energy-transfer electron-electron scattering time in 3D disordered conductors. This electron dephasing mechanism dominates over the electron-phonon ($e$-ph) scattering process because the carrier concentrations in our films are $\sim$ 3 orders of magnitude lower than those in typical metals, which resulted in a greatly suppressed $e$-ph relaxation rate.

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preprint2012arXiv

Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer $e$-$e$ scattering process was observed. Below about 1--2 K, the dephasing time $τ_φ$ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant $D$, i.e., $τ_φ(T \approx 0.3 \, {\rm K}) \propto 1/D$. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented.

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preprint2012arXiv

Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow discharge. The zero-bias conductances $G(T)$ and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5--300 K\@. In addition to the direct tunneling conduction mechanism observed in low-$G$ junctions, high-$G$ junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC) through short nanoconstrictions. We ascribe the experimental realization of the FITC mechanism to originating from the formations of "hot spots" (incomplete pinholes) in the AlO$_{x}$ layer owing to large junction-barrier interfacial roughness.

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preprint2012arXiv

Universal conductance fluctuations in indium tin oxide nanowires

Magnetic field dependent universal conductance fluctuations (UCF&#39;s) are observed in weakly disordered indium tin oxide nanowires from 0.26 K up to $\sim 25$ K. The fluctuation magnitudes increase with decreasing temperature, reaching a fraction of $e^2/h$ at $T \lesssim 1$ K. The shape of the UCF patterns is found to be very sensitive to thermal cycling of the sample to room temperatures, which induces irreversible impurity reconfigurations. On the other hand, the UCF magnitudes are insensitive to thermal cycling. Our measured temperature dependence of the root-mean-square UCF magnitudes are compared with the existing theory [C. W. J. Beenakker and H. van Houten, Phys. Rev. B \textbf{37}, 6544 (1988)]. A notable discrepancy is found, which seems to imply that the experimental UCF&#39;s are not cut off by the thermal diffusion length $L_T$, as would be expected by the theoretical prediction when $L_T < L_φ$, where $L_φ$ is the electron dephasing length. The approximate electron dephasing length is inferred from the UCF magnitudes and compared with that extracted from the weak-localization magnetoresistance studies. A reasonable semiquantitative agreement is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical conduction processes in ZnO in a wide temperature range 20--500 K

We have investigated the electrical conduction processes in as-grown and thermally cycled ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature range 20--500 K. In the case of ZnO single crystal between 110 and 500 K, two types of thermal activation conduction processes are observed. This is explained in terms of the existence of both shallow donors and intermediately deep donors which are consecutively excited to the conduction band as the temperature increases. By measuring the resistivity $ρ(T)$ of a given single crystal after repeated thermal cycling in vacuum, we demonstrate that oxygen vacancies play an important role in governing the shallow donor concentrations but leave the activation energy ($\simeq27\pm$2 meV) largely intact. In the case of polycrystalline films, two types of thermal activation conduction processes are also observed between $\sim$150 and 500 K. Below $\sim$150 K, we found an additional conduction process due to the nearest-neighbor-hopping conduction mechanism which takes place in the shallow impurity band. As the temperatures further decreases below $\sim$80 K, a crossover to the Mott variable-range-hopping conduction process is observed. Taken together with our previous measurements on $ρ(T)$ of ZnO polycrystalline films in the temperature range 2--100 K [Y. L. Huang {\it et al.}, J. Appl. Phys. \textbf{107}, 063715 (2010)], this work establishes a quite complete picture of the overall electrical conduction mechanisms in the ZnO material from liquid-helium temperatures up to 500 K.

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preprint2011arXiv

Fluctuation-induced tunneling conduction through RuO$_2$ nanowire contacts

A good understanding of the electronic conduction processes through nanocontacts is a crucial step for the implementation of functional nanoelectronic devices. We have studied the current-voltage ($I$-$V$) characteristics of nanocontacts between single metallic RuO$_2$ nanowires (NWs) and contacting Au electrodes which were pre-patterned by simple photolithography. Both the temperature behavior of contact resistance in the low-bias voltage ohmic regime and the $I$-$V$ curves in the high-bias voltage non-ohmic regime have been investigated. We found that the electronic conduction processes in the wide temperature interval 1--300 K can be well described by the fluctuation-induced tunneling (FIT) conduction theory. Taken together with our previous work (Lin {\it et al.}, Nanotechnology {\bf 19}, 365201 (2008)) where the nanocontacts were fabricated by delicate electron-beam lithography, our study demonstrates the general validity of the FIT model in characterizing electronic nanocontacts.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Logarithmic temperature dependence of Hall transport in granular metals

We have measured the Hall coefficient $R_H$ and the electrical conductivity $σ$ of a series of ultrathin indium tin oxide films between 2 and 300 K. A robust $R_H$\,$\propto$\,ln$T$ law is observed in a considerably wide temperature range of 2 and $\sim$120 K. This ln$T$ dependence is explained as originated from the electron-electron interaction effect in the presence of granularity, as newly theoretically predicted. Furthermore, we observed a $σ$\,$\propto$\,ln$T$ law from 3 K up to several tens K, which also arose from the Coulomb interaction effect in inhomogeneous systems. These results provide strong experimental supports for the current theoretical concepts for charge transport in granular metals with intergrain tunneling conductivity $g_T$$\gg$1.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Temporal universal conductance fluctuations in RuO$_2$ nanowires due to mobile defects

Temporal universal conductance fluctuations (TUCF) are observed in RuO$_2$ nanowires at cryogenic temperatures. The fluctuations persist up to very high $T \sim 10$ K. Their root-mean-square magnitudes increase with decreasing $T$, reaching $\sim 0.2 e^2/h$ at $T \lesssim 2$ K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in artificially synthesized metal oxide nanowires. TUCF characteristics in both one-dimensional saturated and unsaturated regimes are identified and explained in terms of current theories. Furthermore, the TUCF as a probe for the characteristic time scales of the mobile defects (two-level systems) are discussed.

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preprint2010arXiv

Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires

We have measured the quantum-interference magnetoresistances in two single indium tin oxide (ITO) nanowires between 0.25 and 40 K, by using the four-probe configuration method. The magnetoresistances are compared with the one-dimensional weak-(anti)localization theory to extract the electron dephasing length $L_ϕ$. We found, in a 60-nm diameter nanowire with a low resistivity of $ρ$(10 K) = 185 $μΩ$ cm, that $L_ϕ$ is long, increasing from 150 nm at 40 K to 520 nm at 0.25 K. Therefore, the nanowire reveals strict one-dimensional weak-localization effect up to several tens of degrees of Kelvin. In a second 72-nm diameter nanowire with a high resistivity of $ρ$(10 K) = 1030 $μΩ$ cm, the dephasing length is suppressed to $L_ϕ$(0.26 K) = 200 nm, and thus a crossover of the effective device dimensionality from one to three occurs at about 12 K. In particular, disorder-induced spin-orbit coupling is evident in the latter sample, manifesting weak-antilocalization effect at temperatures below $\sim$ 4 K. These observations demonstrate that versatile quantum-interference effects can be realized in ITO nanowires by controlling differing levels of atomic defects and impurities.

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