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Yong-Han Lin

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Published work

4 published item(s)

preprint2022arXiv

Understanding the Characteristics of Visual Contents in Open Source Issue Discussions: A Case Study of Jupyter Notebook

Most issue tracking systems for open source software (OSS) development include features for community members to embed visual contents, such as images and videos, to enhance the discussion. Although playing an important role, there is little knowledge on the characteristics of the visual contents to support their use. To address this gap, we conducted an empirical study on the Jupyter Notebook project. We found that more than a quarter of the issues in the Jupyter Notebook project included visual contents. Additionally, issues that had visual contents in the comments but not in the issue posts tended to have a longer discussion and to involve a larger number of discussants. In our qualitative analysis, we identified eight types of visual contents in our sample, with about 60% including screenshots or mockups of the main product. We also found that visual contents served diverse purposes, touching both problem and solution spaces of the issues. Our effort serves as an important step towards a comprehensive understanding of the characteristics of visual contents in OSS issue discussions. Our results provided several design implications for issue tracking systems to better facilitate the use of visual contents.

preprint2016arXiv

Structural Order and Melting of a Quasi-One-Dimensional Electron System

We investigate the influence of confinement on the positional order of a quasi-1D electron system trapped on the surface of liquid helium. We find evidence that the melting of the Wigner solid (WS) depends on the confinement strength, as well as electron density and temperature. A reentrant solid-liquid-solid transition is observed for increasing electron density under constant electrostatic confinement. As the electron row number $N_y$ changes, varying commensurability results in a modulation of the WS order, even when $N_y$ is large (several tens). This is confirmed by Monte Carlo simulations.

preprint2012arXiv

Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow discharge. The zero-bias conductances $G(T)$ and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5--300 K\@. In addition to the direct tunneling conduction mechanism observed in low-$G$ junctions, high-$G$ junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC) through short nanoconstrictions. We ascribe the experimental realization of the FITC mechanism to originating from the formations of "hot spots" (incomplete pinholes) in the AlO$_{x}$ layer owing to large junction-barrier interfacial roughness.

preprint2011arXiv

Fluctuation-induced tunneling conduction through RuO$_2$ nanowire contacts

A good understanding of the electronic conduction processes through nanocontacts is a crucial step for the implementation of functional nanoelectronic devices. We have studied the current-voltage ($I$-$V$) characteristics of nanocontacts between single metallic RuO$_2$ nanowires (NWs) and contacting Au electrodes which were pre-patterned by simple photolithography. Both the temperature behavior of contact resistance in the low-bias voltage ohmic regime and the $I$-$V$ curves in the high-bias voltage non-ohmic regime have been investigated. We found that the electronic conduction processes in the wide temperature interval 1--300 K can be well described by the fluctuation-induced tunneling (FIT) conduction theory. Taken together with our previous work (Lin {\it et al.}, Nanotechnology {\bf 19}, 365201 (2008)) where the nanocontacts were fabricated by delicate electron-beam lithography, our study demonstrates the general validity of the FIT model in characterizing electronic nanocontacts.