Source author record

Jordan A. Katine

Jordan A. Katine appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

7works
6topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2022arXiv

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

preprint2014arXiv

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks.

preprint2013arXiv

Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.

preprint2013arXiv

Time Domain Mapping of Spin Torque Oscillator Effective Energy

Stochastic dynamics of spin torque oscillators (STOs) can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that directly probes this effective energy surface via time-resolved measurements of the microwave voltage generated by a STO. We show that the effective energy approach provides a simple recipe for predicting spectral line widths and line shapes near the generation threshold. Our time domain technique also accurately measures the field-like component of spin torque in a wide range of the voltage bias values.

preprint2013arXiv

Ultralow-current-density and bias-field-free spin-transfer nano-oscillator

The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.

preprint2011arXiv

Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field

We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpoint of the pillar cross-section along the ellipse long axis. These results have important implications for the thermal stability of perpendicular magnetized MRAM bit cells.

preprint2010arXiv

Time-resolved detection of spin-transfer-driven ferromagnetic resonance and spin torque measurement in magnetic tunnel junctions

Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin physics in magnetic devices and for applications. However, previous techniques have provided only indirect measures of the torque and their results to date for the bias dependence are qualitatively and quantitatively inconsistent. Here we demonstrate that spin torque in MTJs can be measured directly by using time-domain techniques to detect resonant magnetic precession in response to an oscillating spin torque. The technique is accurate in the high-bias regime relevant for applications, and because it detects directly small-angle linear-response magnetic dynamics caused by spin torque it is relatively immune to artifacts affecting competing techniques. At high bias we find that the spin torque vector differs markedly from the simple lowest-order Taylor series approximations commonly assumed.