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Source author record

Ilya N. Krivorotov

Ilya N. Krivorotov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.otherphysics.app-ph

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Published work

11 published item(s)

preprint2020arXiv

Spin-momentum locking induced non-local voltage in topological insulator nanowire

The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit a symmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual symmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Immunity of nanoscale magnetic tunnel junctions to ionizing radiation

Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies of the effects of high doses of ionizing radiation on STT-MRAM writing process are lacking. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale MTJs with perpendicular magnetic anistropy used in STT-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the current-induced switching before and after irradiation. Our results demonstrate that all these key properties of nanoscale MTJs relevant to STT-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. These results indicate that nanoscale MTJs are promising building blocks for radiation-hard non-von Neumann computing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Angular dependence of superconductivity in superconductor / spin valve heterostructures

We report measurements of the superconducting transition temperature, $T_c$, in CoO/Co/Cu/Co/Nb multilayers as a function of the angle $α$ between the magnetic moments of the Co layers. Our measurements reveal that $T_c(α)$ is a nonmonotonic function, with a minimum near $α=π/{2}$. Numerical self-consistent solutions of the Bogoliubov - de Gennes equations quantitatively and accurately describe the behavior of $T_c$ as a function of $α$ and layer thicknesses in these superconductor / spin-valve heterostructures. We show that experimental data and theoretical evidence agree in relating $T_c(α)$ to enhanced penetration of the triplet component of the condensate into the Co/Cu/Co spin valve in the maximally noncollinear magnetic configuration.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nanowire Spin Torque Oscillator Driven by Spin Orbit Torques

Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as negative magnetic damping and thereby excite self-oscillations of its magnetization. In contrast, spin torque uniformly applied to the magnetization of an extended ferromagnetic film does not generate self-oscillatory magnetic dynamics but leads to reduction of the saturation magnetization. Here we report studies of the effect of spin torque on a system of intermediate dimensionality - a ferromagnetic nanowire. We observe coherent self-oscillations of magnetization in a ferromagnetic nanowire serving as the active region of a spin torque oscillator driven by spin orbit torques. Our work demonstrates that magnetization self-oscillations can be excited in a one-dimensional magnetic system and that dimensions of the active region of spin torque oscillators can be extended beyond the nanometer length scale.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Time Domain Mapping of Spin Torque Oscillator Effective Energy

Stochastic dynamics of spin torque oscillators (STOs) can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that directly probes this effective energy surface via time-resolved measurements of the microwave voltage generated by a STO. We show that the effective energy approach provides a simple recipe for predicting spectral line widths and line shapes near the generation threshold. Our time domain technique also accurately measures the field-like component of spin torque in a wide range of the voltage bias values.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ultralow-current-density and bias-field-free spin-transfer nano-oscillator

The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Angular Dependence of the Superconducting Transition Temperature in Ferromagnet-Superconductor-Ferromagnet Trilayers

The superconducting transition temperature, $T_c$, of a ferromagnet (F) - superconductor (S) - ferromagnet trilayer depends on the mutual orientation of the magnetic moments of the F layers. This effect has been previously observed in F/S/F systems as a $T_c$ difference between parallel and antiparallel configurations of the F layers. Here we report measurements of $T_c$ in CuNi/Nb/CuNi trilayers as a function of the angle between the magnetic moments of the CuNi ferromagnets. The observed angular dependence of $T_c$ is in qualitative agreement with a F/S proximity theory that accounts for the odd triplet component of the condensate predicted to arise for non-collinear orientation of the magnetic moments of the F layers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strategies and tolerances of spin transfer torque switching

Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that switching with perpendicularly polarized current by short pulses and free precession requires smaller time and energy than spin torque switching with collinear in plane spin polarization; it is also found to be superior to other kinds of memories. We study the tolerances of switching to the magnitude of current and pulse duration. An increased Gilbert damping is found to improve tolerances of perpendicular switching without increasing the threshold current, unlike in plane switching.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magnetic Domain Wall Pumping by Spin Transfer Torque

We show that spin transfer torque from direct spin-polarized current applied parallel to a magnetic domain wall (DW) induces DW motion in a direction independent of the current polarity. This unidirectional response of the DW to spin torque enables DW pumping: long-range DW displacement driven by alternating current. Our numerical simulations reveal that DW pumping can be resonantly amplified through excitation of internal degrees of freedom of the DW by the current.

0 citations0 reviewsNo code linkedOpen access