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Researcher profile

Andrew D. Kent

Andrew D. Kent contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phcond-mat.mtrl-sciEmerging Technologiescond-mat.dis-nncond-mat.othercond-mat.supr-conNeural and Evolutionary Computingnlin.PS

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Published work

14 published item(s)

preprint2025arXiv

Magnetic tunnel junction as a real-time entropy source: Field-Programmable Gate Array based random bit generation without post-processing

We demonstrate a method to generate application-ready truly random bits from a magnetic tunnel junction driven by a Field-Programmable Gate Array (FPGA). We implement a real-time feedback loop that stabilizes the switching probability near 50\% and apply an XOR operation, both on the FPGA, to suppress short-term correlations, together mitigating long-term drift and bias in the bitstream. This combined approach enables NIST-compliant random bit generation at 5~Mb/s without post-processing, providing a practical hardware solution for fast and reliable true random number generation. Beyond cryptographic applications, these capabilities open opportunities for stochastic hardware accelerators, probabilistic computing, and large-scale modeling where real-time access to unbiased randomness is essential.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Superparamagnetic and Stochastic-Write Magnetic Tunnel Junctions for High-Speed True Random Number Generation in Advanced Computing

We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate thermal-fluctuation-driven bit streams at $0.5$--$1$~Gb/s per device. The second uses MTJs with magnetically stable free layers, operated with stochastic write pulses to achieve switching probabilities of about $0.5$ (\emph{i.e.}, write error rates of $\simeq 0.5$), achieving $\gtrsim 0.1$~Gb/s per device; we refer to these as stochastic-write MTJs (SW-MTJs). Randomness from both approaches has been validated using the NIST~SP800 test suites. The sMTJ approach uses a read-only cell with low power and can be compatible with most advanced CMOS nodes, while SW-MTJs leverage standard CMOS MTJ process flows, enabling co-integration with embedded spin-transfer torque magnetic random access memory (STT-MRAM). Both approaches can achieve deep sub-0.01~$μ$m$^2$ MTJ footprints and offer orders-of-magnitude better energy efficiency than CPU/GPU-based generators, enabling placement near logic for high-throughput random bit-streams for probabilistic computing, statistical modeling, and cryptography. In terms of performance, sMTJs generally suit applications requiring very high data-rate random bits near logic processors, such as probabilistic computing or large-scale statistical modeling. By contrast, SW-MTJs are an attractive option for edge-oriented microcontrollers, providing entropy sources for computing or cryptographic enhancement. We highlight the strengths, limitations, and integration challenges of each approach, emphasizing the need to reduce device-to-device variability in sMTJs -- particularly by mitigating magnetostriction-induced in-plane anisotropy -- and to improve temporal stability in SW-MTJs for robust, large-scale deployment.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Tunable Random Telegraph Noise in Stable Perpendicular Magnetic Tunnel Junctions for Unconventional Computing

We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This actuated-stochastic tunnel junction (A-sMTJ) concept produces random telegraph noise, with control over fluctuation rate and probability bias. The device response is shown to be consistent with a Poisson process, with fluctuation rates tunable over more than two orders of magnitude, with average state dwell times varying from 29 ns to greater than 2.3 microseconds. These results establish A-sMTJs as a versatile platform for integrating deterministic, stochastic, and in-memory functionality on a single chip, advancing the development of probabilistic, neuromorphic, and unconventional computing systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories

Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current can be used in 2-terminal and 3-terminal device geometries. In 2-terminal devices, charge-to-spin conversion occurs by spin filtering in the MTJ's ferromagnetic electrodes and present day MRAM devices operate near the theoretically expected maximum charge-to-spin conversion efficiency. In 3-terminal devices, spin-orbit interactions in a channel material can also be used to generate large spin currents. In this perspective article, we discuss charge-to-spin conversion processes that can satisfy the requirements of MRAM technology. We emphasize the need to develop channel materials with larger charge-to-spin conversion efficiency -- that can equal or exceed that produced by spin filtering -- and spin currents with a spin polarization component perpendicular to the channel interface. This would enable high-performance devices based on sub-20 nm diameter perpendicularly magnetized MTJ nanopillars without need of a symmetry breaking field. We also discuss MRAM characteristics essential for CMOS integration. Finally, we identify critical research needs for charge-to-spin conversion measurements and metrics that can be used to optimize device channel materials and interface properties prior to full MTJ nanopillar device fabrication and characterization.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum materials for energy-efficient neuromorphic computing

Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Easy-plane spin Hall nano-oscillators as spiking neurons for neuromorphic computing

We show analytically using a macrospin approximation that easy-plane spin Hall nano-oscillators excited by a spin-current polarized perpendicularly to the easy-plane have phase dynamics analogous to that of Josephson junctions. Similarly to Josephson junctions, they can reproduce the spiking behavior of biological neurons that is appropriate for neuromorphic computing. We perform micromagnetic simulations of such oscillators realized in the nano-constriction geometry and show that the easy-plane spiking dynamics is preserved in an experimentally feasible architecture. Finally we simulate two elementary neural network blocks that implement operations essential for neuromorphic computing. First, we show that output spikes energies from two neurons can be summed and injected into a following layer neuron and second, we demonstrate that outputs can be multiplied by synaptic weights implemented by locally modifying the anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantifying Spin-Orbit Torques in Antiferromagnet/Heavy Metal Heterostructures

The effect of spin currents on the magnetic order of insulating antiferromagnets (AFMs) is of fundamental interest and can enable new applications. Toward this goal, characterizing the spin-orbit torques (SOT) associated with AFM/heavy metal (HM) interfaces is important. Here we report the full angular dependence of the harmonic Hall voltages in a predominantly easy-plane AFM, epitaxial c-axis oriented $α$-Fe$_2$O$_3$ films, with an interface to Pt. By modeling the harmonic Hall signals together with the $α$-Fe$_2$O$_3$ magnetic parameters, we determine the amplitudes of field-like and damping-like SOT. Out-of-plane field scans are shown to be essential to determining the damping-like component of the torques. In contrast to ferromagnetic/heavy metal heterostructures, our results demonstrate that the field-like torques are significantly larger than the damping-like torques, which we correlate with the presence of a large imaginary component of the interface spin-mixing conductance. Our work demonstrates a direct way of characterizing SOT in AFM/HM heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Third Harmonic Characterization of Antiferromagnetic Heterostructures

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. Harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect in heavy-metal/ferromagnet systems. However, the harmonic measurement technique has never been verified in antiferromagnetic heterostructures. Here, we report for the first time harmonic measurements in Pt/$α$-Fe$_2$O$_3$ bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/$α$-Fe$_2$O$_3$ emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Charge-to-spin conversion efficiency in ferromagnetic nanowires by spin torque ferromagnetic resonance: Reconciling lineshape and linewidth analysis methods

Spin orbit torques are of great interest for switching the magnetization direction in nanostructures, moving skyrmions and exciting spin waves. The standard method of determining their efficiency is by spin torque ferromagnetic resonance (ST-FMR), a technique that involves analyzing the resonance linewidth or lineshape. On microstuctures these two analysis methods are quite consistent. Here we present ST-FMR results on permalloy (Ni$_{80}$Fe$_{20}$) nanowires -- with widths varying from $150$ to 800 nm -- that show that the standard model used to analyze the resonance linewidth and lineshape give different results; the efficiency appears greatly enhanced in nanowires when the lineshape method is used. A ST-FMR model that properly accounts for the sample shape is presented and shows much better consistency between the two methods. Micromagnetic simulations are used to verify the model. These results and the more accurate nanowire model presented are of importance for characterizing and optimizing charge-to-spin conversion efficiencies in nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic Droplet Solitons

Magnetic droplet solitons are dynamical magnetic textures that form due to an attractive interaction between spin waves in thin films with perpendicular magnetic anisotropy. Spin currents and the spin torques associated with these currents enable their formation as they provide a means to excite non-equilibrium spin wave populations and compensate their decay. Recent years have seen rapid advances in experiments that realize and study magnetic droplets. Important advances include the first direct x-ray images of droplets, determination of their threshold and sustaining currents, measurement of their generation and annihilation time and evidence for drift instabilities, which can limit their lifetime in spin-transfer nanocontacts. This article reviews these studies and contrasts these solitons to other types of spin-current excitations such as spin-wave bullets, and static magnetic textures, including magnetic vortices and skyrmions. Magnetic droplet solitons can also serve as current controlled microwave frequency oscillators with potential applications in neuromorphic chips as nonlinear oscillators with memory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Micromagnetic instabilities in spin-transfer switching of perpendicular magnetic tunnel junctions

Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly magnetized magnetic tunnel junction nanopillars. We show that domain wall surface tension always leads to magnetization oscillations and instabilities associated with the disk shape of the junction. A collective coordinate model is developed that captures aspects of these instabilities and illustrates their physical origin. Model results are compared to those of micromagnetic simulations. The switching dynamics is found to be very sensitive to the domain wall position and phase, which characterizes the angle of the magnetization in the disk plane. This sensitivity is reduced in the presence of spin torques and the spin current needed to displace a domain wall can be far less than the threshold current for switching from a uniformly magnetized state. A prediction of this model is conductance oscillations of increasing frequency during the switching process.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Precessional spin-torque dynamics in biaxial antiferromagnets

The Néel order of an antiferromagnet subject to a spin torque can undergo precession in a circular orbit about any chosen axis. To orient and stabilize the motion against the effects of magnetic anisotropy, the spin polarization should have components in-plane and normal to the plane of the orbit, where the latter must exceed a threshold. For biaxial antiferromagnets, the precessional motion is described by the equation for a damped-driven pendulum, which has hysteresis a function of the spin current with a critical value where the period diverges. The fundamental frequency of the motion varies inversely with the damping, and as $(x^p-1)^{1/p}$ with the drive-to-criticality ratio $x$ and the parameter $p>2$. An approximate closed-form result for the threshold spin current is presented, which depends on the minimum cutoff frequency the orbit can support. Precession about the hard axis has zero cutoff frequency and the lowest threshold, while the easy axis has the highest cutoff. A device setup is proposed for electrical control and detection of the dynamics, which is promising to demonstrate a tunable terahertz nano-oscillator.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory

We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ devices exhibited high magnetoresistance (>120%) and reliable (error rate<10-4) bi-directional switching with 2 to 200 ns voltage pulses. The endurance of the devices at 9 K surpassed that at 300 K by three orders of magnitude under the same write conditions, functioning for more than 10^12 cycles with 10 ns write pulses. The critical switching voltage at 9 K was observed to increase by 33% to 93%, depending on pulse duration, compared to that at 350 K. Ferromagnetic resonance and magnetization measurements on blanket pMTJ film stacks suggest that the increased switching voltage is associated with an increase in effective magnetic anisotropy and magnetization of free layer with decreasing temperature. Our work demonstrates that CoFeB/MgO based pMTJs have great potential to enable cryogenic MRAM and that their low temperature magnetization and effective magnetic anisotropy can be further optimized to lower operating power and improve endurance.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Planar Hall driven torque in a FM/NM/FM system

An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the CoFeB layer. The response as a function of the applied field angle and current is consistent with the symmetry expected for a torques produced by the planar Hall effect originating in CoNi. We find the strength of this effect to be comparable to that of the spin Hall effect in platinum, indicating that the planar Hall effect holds potential as a spin current source with a controllable polarization direction.

0 citations0 reviewsNo code linkedOpen access