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John Robertson

John Robertson appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elArtificial IntelligenceCryptography and Securitycs.CYphysics.atm-clus

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Published work

14 published item(s)

preprint2020arXiv

Electronic Structure of Amorphous Copper Iodide: A p-type Transparent Semiconductor

The atomic and electronic structure of the p-type transparent amorphous semiconductor CuI is calculated by ab-initio molecular dynamics. It is found to consist of a random tetrahedrally bonded network. The hole effective mass is found to be quite low, as in the crystal. The valence band maximum (VBM) state has a mixed I(p)-Cu(t2g)-I(p) character, and its energy is relatively insensitive to disorder. An iodine excess creates holes that move the Fermi level into the valence band, but it does not pin the Fermi level above the VBM mobility edge. Thus the Fermi level can easily enter the valence band if p-doped, similar to the behavior of electrons in In-Ga-Zn oxide semiconductors but opposite to that of electrons in a-Si:H. This suggests that amorphous CuI could make an effective p-type transparent semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Darknet and Deepnet Mining for Proactive Cybersecurity Threat Intelligence

In this paper, we present an operational system for cyber threat intelligence gathering from various social platforms on the Internet particularly sites on the darknet and deepnet. We focus our attention to collecting information from hacker forum discussions and marketplaces offering products and services focusing on malicious hacking. We have developed an operational system for obtaining information from these sites for the purposes of identifying emerging cyber threats. Currently, this system collects on average 305 high-quality cyber threat warnings each week. These threat warnings include information on newly developed malware and exploits that have not yet been deployed in a cyber-attack. This provides a significant service to cyber-defenders. The system is significantly augmented through the use of various data mining and machine learning techniques. With the use of machine learning models, we are able to recall 92% of products in marketplaces and 80% of discussions on forums relating to malicious hacking with high precision. We perform preliminary analysis on the data collected, demonstrating its application to aid a security expert for better threat analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to monolayer graphene growth on SiO2/Si. The produced monolayer graphene exhibits high carrier mobility of up to 3000 cm2 V-1s-1 at room temperature and standard half-integer quantum oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Indirect doping effects from impurities in MoS$_2$/BN heterostructures

We performed density functional theory calculations on heterostructures of single layers of hexagonal BN and MoS$_2$ to assess the effect of doping in the BN sheet and of interstitial Na atoms on the electronic properties of the adjacent MoS$_2$ layer. Our calculations predict that $n$-doping of the boron nitride subsystem by oxygen, carbon and sulfur impurities causes noticeable charge transfer into the conduction band of the MoS$_2$ sheet, while $p$-doping by beryllium and carbon leaves the molybdenum disulphide layer largely unaffected. Intercalated sodium atoms lead to a significant increase of the interlayer distance in the heterostructure and to a metallic ground state of the MoS$_2$ subsystem. The presence of such $n$-dopants leads to a distinct change of valence band and conduction band offsets, suggesting that doped BN remains a suitable substrate and gate material for applications of $n$-type MoS$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Accurate screened exchange band structures for transition metal monoxides MnO, FeO, CoO and NiO

We report calculations of the band structures and density of states of the four transition metal monoxides MnO, FeO, CoO and NiO using the hybrid density functional sX-LDA. Late transition metal oxides are prototypical examples of strongly correlated materials, which pose challenges for electronic structure methods. We compare our results with available experimental data and show that our calculations yield accurate predictions for the fundamental band gaps and valence bands of FeO, CoO and NiO. For MnO, the band gaps are underestimated, suggesting additional many-body effects that are not captured by our screened hybrid functional approach.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Metal Insulator Transition of Cr doped V2O3 calculated by hybrid density functional

The electronic structure of vanadium sesquioxide in its different phases has been calculated using the screened exchange (sX) hybrid functional. The hybrid functional reproduces the electronic properties of all three phases, the paramagnetic metal (PM) phase, the anti-ferromagnetic insulating phase, and the Cr-doped paramagnetic insulating (PI) phase. A fully relaxed supercell model of Cr-doped V2O3 has a polaronic distortion around the substitutional Cr atoms and this local strain drives the PI-PM transition. The PI phase has a calculated band gap of 0.15eV in good agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nanotube caps on Ni, Fe, and NiFe nano particles: A path to chirality selective growth

Carbon nanotubes have properties depending on the arrangement of carbon atoms on the tube walls, called chirality. Also it has been tried to grow nanotubes of only one chirality for more than a decade it is still not possible today. A narrowing of the distribution of chiralities, however, which is a first step towards chirality control, has been observed for the growth of nanotubes on catalysts composed of nickel and iron. In this paper, we have calculated carbon-metal bond energies, adhesion energies and charge distributions of carbon nanotube caps on Ni, Fe and NiFe alloy clusters using density functional theory. A growth model using the calculated energies was able to reproduce the experimental data of the nanotube growth on the alloy catalysts. The electronic charge was found to be redistributed from the catalyst particles to the edges of the nanotube caps in dependence of the chiral angles of the caps increasing the reactivity of the edge atoms. Our study develops an explanation for the chirality enrichment in the carbon nanotube growth on alloy catalyst particles.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The nature of the electronic band gap in lanthanide oxides

Accurate electronic structures of the technologically important lanthanide/rare earth sesquioxides (Ln2O3, with Ln=La,...,Lu) and CeO2 have been calculated using hybrid density functionals HSE03, HSE06 and screened-exchange (sX-LDA). We find that these density functional methods describe the strongly correlated Ln f-electrons as well as the recent G0W0@LDA+U results, generally yielding the correct band gaps and trends across the Ln-period. For HSE, the band gap between O 2p states and lanthanide 5d states is nearly independent of the lanthanide, while the minimum gap varies as filled or empty Ln 4f states come into this gap. sX-LDA predicts the unoccupied 4f levels at higher energies, which leads to a better agreement with experiments for Sm2O3, Eu2O3 and Yb2O3.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Calculation of point defects in rutile TiO2 by the Screened Exchange Hybrid Functional

The formation energies of the oxygen vacancy and titanium interstitial in rutile TiO2 were calculated by the screened exchange (sX) hybrid density functional method, which gives a band gap of 3.1 eV, close to the experimental value. The O vacancy gives rise to a gap state lying 0.7 eV below the conduction band edge, whose charge density is localised around the two of three Ti atoms next to the vacancy. The Ti interstitial generates four defect states in the gap, whose unpaired electrons lie on the interstitial and the adjacent Ti 3d orbitals. The formation energy for the neutral O vacancy is 1.9 eV for the O-poor chemical potential, and similar to that of the neutral Ti interstitial, and has a lower formation energy for Ti interstitial under O-rich conditions. This indicates that both the O vacancy and Ti interstitial are relevant for oxygen deficiency in rutile TiO2 but the O vacancy will dominate under O-rich conditions. This resolves the questions about defect localisation and defect predominance in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Band structure calculations of CuAlO2, CuGaO2, CuInO2 and CuCrO2 by screened exchange

We report density functional theory (DFT) band structure calculations on the transparent conducting oxides CuAlO2, CuGaO2, CuInO2 and CuCrO2. The use of the hybrid functional sX-LDA leads to considerably improved electronic properties compared to standard local density approximation (LDA) and generalized gradient approximation (GGA) approaches. We show that the resulting electronic band gaps compare well with experimental values and previous quasiparticle calculations and show the correct trends with respect to the atomic number of the cation (Al, Ga, In). The resulting energetic depths of Cu d and O p levels and the valence band widths are considerable improvements compared to LDA and GGA and in good agreement with available x-ray photoelectron spectroscopy (XPS) data. Lastly, we show the calculated imaginary part of the dielectric function for all four systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hybrid functional calculations of the Al impurity in silica: Hole localization and electron paramagnetic resonance parameters

We performed first-principle calculations based on the supercell and cluster approaches to investigate the neutral Al impurity in smoky quartz. Electron paramagnetic resonance measurements suggest that the oxygens around the Al center undergo a polaronic distortion which localizes the hole being on one of the four oxygen atoms. We find that the screened exchange hybrid functional successfully describes this localization and improves on standard local density approaches or on hybrid functionals that do not include enough exact exchange such as B3LYP. We find a defect level at about 2.5 eV above the valence band maximum, corresponding to a localized hole in a O 2p orbital. The calculated values of the g tensor and the hyperfine splittings are in excellent agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

DFT screened-exchange approach for investigating electronical properties of graphene-related materials

We present ab initio calculations of the bandstructure of graphene and of short zigzag graphene nanoribbons by the screened-exchange-LDA method (sX-LDA) within the framework of density functional theory (DFT). The inclusion of non-local electron-electron interactions in this approach results in a renormalization of the electronic bandstructure and the Fermi velocity compared to calculations within local density approximation (LDA) gives good agreement with experiment. Similarly, the band gaps in zigzag nanoribbons (ZGNR) are widened by more than 200%, being of similar magnitude than bandgaps from past studies based on quasiparticle bandstructures. We found a noticeable effect of non-local exchange on the spin-polarization of the electronic ground state of ZGNRs, compared to LDA and GGA-PW91 calculations.

0 citations0 reviewsNo code linkedOpen access