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Researcher profile

Bruno Dlubak

Bruno Dlubak contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallEmerging Technologiesphysics.app-ph

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Published work

5 published item(s)

preprint2022arXiv

Characterization and modeling of spiking and bursting in experimental NbOx neuron

Hardware spiking neural networks hold the promise of realizing artificial intelligence with high energy efficiency. In this context, solid-state and scalable memristors can be used to mimic biological neuron characteristics. However, these devices show limited neuronal behaviors and have to be integrated in more complex circuits to implement the rich dynamics of biological neurons. Here we studied a NbOx memristor neuron that is capable of emulating numerous neuronal dynamics, including tonic spiking, stochastic spiking, leaky-integrate-and-fire features, spike latency, temporal integration. The device also exhibits phasic bursting, a property that has scarcely been observed and studied in solid-state nano-neurons. We show that we can reproduce and understand this particular response through simulations using non-linear dynamics. These results show that a single NbOx device is sufficient to emulate a collection of rich neuronal dynamics that paves a path forward for realizing scalable and energy-efficient neuromorphic computing paradigms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

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preprint2014arXiv

Spintronics with graphene

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Highly efficient spin transport in epitaxial graphene on SiC

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

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