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Yuzheng Guo

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2026arXiv

Anisotropic Kinetics of Ion-Irradiation-Induced Phase Transition in Gallium Oxide

Radiation-tolerant semiconductors have traditionally been engineered by the principle of suppressing defect accumulation and amorphization, based on the assumption that radiation damage is inherently stochastic. Here we show that, in monoclinic $β$-\ce{Ga2O3}, a promising ultrawide-bandgap semiconductor, surface crystallographic orientation deterministically governs radiation tolerance through highly anisotropic kinetics of the $β$-to-$γ$ phase transition. Using machine-learning molecular dynamics coupled with a local configurational-entropy descriptor, we quantitatively map anisotropic $β$-to-$γ$ transition kinetics, showing that the critical dose, transition-layer depth, and kinetic stability of the $γ$-phase are fundamentally governed by surface orientation. Under ion irradiation, non-channeling surfaces such as (100), (001), and (-201) undergo severe surface amorphization, whereas the strongly channeling (010) surface resists damage accumulation and promotes subsurface $γ$-phase nucleation. During thermal annealing recovery process, these initial states follow two distinct recovery pathways: the channeling (010) surface reverts directly from $γ$-to-$β$, whereas non-channeling surfaces follow a sequential amorphous-to-$γ$-to-$β$ transition pathway. This work establishes surface orientation as a fundamental design principle for achieving radiation tolerance through controlled polymorphic transitions, providing a universal framework for engineering functional materials capable of withstanding extreme irradiation environments.

preprint2021arXiv

Ferroelectric-HfO2/Oxide Interfaces, Oxygen Distribution Effect and Implications for Device Performance

Atomic-scale understanding of HfO2 ferroelectricity is important to help address many challenges in developing reliable and high-performance ferroelectric HfO2 (fe-HfO2) based devices. Though investigated from different angles, a factor that is real device-relevant and clearly deserves more attention has largely been overlooked by previous research, namely, the fe-HfO2/dielectric interface. Here, we investigate the electronic structures of several typical interfaces formed between ultrathin fe-HfO2 and oxide dielectrics in the sub-3-nm region. We find that interface formation introduces strong depolarizing fields in fe-HfO2, which is detrimental for ferroelectric polarization but can be a merit if tamed for tunneling devices, as recently demonstrated. Asymmetric oxygen distribution-induced polarity, intertwined with ferroelectric polarization or not, is also investigated as a relevant interfacial effect in real device. Though considered detrimental from certain aspects, such as inducing build-in field (independent of ferroelectric polarization) and exacerbating depolarization (intertwined with ferroelectric polarization), it can be partly balanced out by other effects, such as annealing (extrinsic) and polarity-induced defect formation (intrinsic). This work provides insights into ferroelectric-HfO2/dielectric interfaces and some useful implications for the development of devices.

preprint2021arXiv

Internal reverse-biased p-n junctions: a possible origin of the high resistance in phase change superlattice

Phase change superlattice is one of the emerging material technologies for ultralow-power phase change memories. However, the resistance switching mechanism of phase change superlattice is still hotly debated. Early electrical measurements and recent materials characterizations have suggested that the Kooi phase is very likely to be the as-fabricated low-resistance state. Due to the difficulty in in-situ characterization at atomic resolution, the structure of the electrically switched superlattice in its high-resistance state is still unknown and mainly investigated by theoretical modellings. So far, there has been no simple model that can unify experimental results obtained from device-level electrical measurements and atomic-level materials characterizations. In this work, we carry out atomistic transport modellings of the phase change superlattice device and propose a simple mechanism accounting for its high resistance. The modeled high-resistance state is based on the interfacial phase changed superlattice that has previously been mistaken for the low-resistance state. This work advances the understanding of phase change superlattice for emerging memory applications.

preprint2020arXiv

Electronic Structure of Amorphous Copper Iodide: A p-type Transparent Semiconductor

The atomic and electronic structure of the p-type transparent amorphous semiconductor CuI is calculated by ab-initio molecular dynamics. It is found to consist of a random tetrahedrally bonded network. The hole effective mass is found to be quite low, as in the crystal. The valence band maximum (VBM) state has a mixed I(p)-Cu(t2g)-I(p) character, and its energy is relatively insensitive to disorder. An iodine excess creates holes that move the Fermi level into the valence band, but it does not pin the Fermi level above the VBM mobility edge. Thus the Fermi level can easily enter the valence band if p-doped, similar to the behavior of electrons in In-Ga-Zn oxide semiconductors but opposite to that of electrons in a-Si:H. This suggests that amorphous CuI could make an effective p-type transparent semiconductor.

preprint2015arXiv

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to monolayer graphene growth on SiO2/Si. The produced monolayer graphene exhibits high carrier mobility of up to 3000 cm2 V-1s-1 at room temperature and standard half-integer quantum oscillations.

preprint2013arXiv

Metal Insulator Transition of Cr doped V2O3 calculated by hybrid density functional

The electronic structure of vanadium sesquioxide in its different phases has been calculated using the screened exchange (sX) hybrid functional. The hybrid functional reproduces the electronic properties of all three phases, the paramagnetic metal (PM) phase, the anti-ferromagnetic insulating phase, and the Cr-doped paramagnetic insulating (PI) phase. A fully relaxed supercell model of Cr-doped V2O3 has a polaronic distortion around the substitutional Cr atoms and this local strain drives the PI-PM transition. The PI phase has a calculated band gap of 0.15eV in good agreement with experiment.