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Stewart J. Clark

Stewart J. Clark appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elphysics.atm-clusphysics.comp-ph

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Published work

5 published item(s)

preprint2020arXiv

Classical turning surfaces in solids: When do they occur, and what do they mean?

Classical turning surfaces of Kohn-Sham potentials, separating classically-allowed regions (CARs) from classically-forbidden regions (CFRs), provide a useful and rigorous approach to understanding many chemical properties of molecules. Here we calculate such surfaces for several paradigmatic solids. Our study of perfect crystals at equilibrium geometries suggests that CFRs are absent in metals, rare in covalent semiconductors, but common in ionic and molecular crystals. A CFR can appear at a monovacancy in a metal. In all materials, CFRs appear or grow as the internuclear distances are uniformly expanded. Calculations with several approximate density functionals and codes confirm these behaviors. A classical picture of conduction suggests that CARs should be connected in metals, and disconnected in wide-gap insulators. This classical picture is confirmed in the limits of extreme uniform compression of the internuclear distances, where all materials become metals without CFRs, and extreme expansion, where all materials become insulators with disconnected and widely-separated CARs around the atoms.

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preprint2013arXiv

Metal Insulator Transition of Cr doped V2O3 calculated by hybrid density functional

The electronic structure of vanadium sesquioxide in its different phases has been calculated using the screened exchange (sX) hybrid functional. The hybrid functional reproduces the electronic properties of all three phases, the paramagnetic metal (PM) phase, the anti-ferromagnetic insulating phase, and the Cr-doped paramagnetic insulating (PI) phase. A fully relaxed supercell model of Cr-doped V2O3 has a polaronic distortion around the substitutional Cr atoms and this local strain drives the PI-PM transition. The PI phase has a calculated band gap of 0.15eV in good agreement with experiment.

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preprint2013arXiv

The nature of the electronic band gap in lanthanide oxides

Accurate electronic structures of the technologically important lanthanide/rare earth sesquioxides (Ln2O3, with Ln=La,...,Lu) and CeO2 have been calculated using hybrid density functionals HSE03, HSE06 and screened-exchange (sX-LDA). We find that these density functional methods describe the strongly correlated Ln f-electrons as well as the recent G0W0@LDA+U results, generally yielding the correct band gaps and trends across the Ln-period. For HSE, the band gap between O 2p states and lanthanide 5d states is nearly independent of the lanthanide, while the minimum gap varies as filled or empty Ln 4f states come into this gap. sX-LDA predicts the unoccupied 4f levels at higher energies, which leads to a better agreement with experiments for Sm2O3, Eu2O3 and Yb2O3.

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preprint2012arXiv

Calculation of point defects in rutile TiO2 by the Screened Exchange Hybrid Functional

The formation energies of the oxygen vacancy and titanium interstitial in rutile TiO2 were calculated by the screened exchange (sX) hybrid density functional method, which gives a band gap of 3.1 eV, close to the experimental value. The O vacancy gives rise to a gap state lying 0.7 eV below the conduction band edge, whose charge density is localised around the two of three Ti atoms next to the vacancy. The Ti interstitial generates four defect states in the gap, whose unpaired electrons lie on the interstitial and the adjacent Ti 3d orbitals. The formation energy for the neutral O vacancy is 1.9 eV for the O-poor chemical potential, and similar to that of the neutral Ti interstitial, and has a lower formation energy for Ti interstitial under O-rich conditions. This indicates that both the O vacancy and Ti interstitial are relevant for oxygen deficiency in rutile TiO2 but the O vacancy will dominate under O-rich conditions. This resolves the questions about defect localisation and defect predominance in the literature.

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preprint2012arXiv

Optimized Effective Potential Using The Hylleraas Variational Method

In electronic structure calculations the optimized effective potential (OEP) is a method that treats exchange interactions exactly using a local potential within density-functional theory (DFT). We present a method using density functional perturbation theory combined with the Hylleraas variational method for finding the OEP by direct minimization which avoids any sum over unoccupied states. The method has been implemented within the plane-wave, pseudopotential formalism. Band structures for zinc blende semiconductors Si, Ge C, GaAs, CdTe and ZnSe, wurtzite semiconductors InN, GaN and ZnO and the rocksalt insulators CaO and NaCl have been calculated using the OEP and compared to calculations using the local density approximation (LDA), a selection of generalized gradient approximations (GGAs) and Hartree-Fock (HF) functionals. The band gaps found with the OEP improve on the calculated results for the LDA, GGAs or HF, with calculated values of 1.16eV for Si, 3.32eV for GaN and 3.48eV for ZnO. The OEP energies of semi-core d-states are also greatly improved compared to LDA.

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