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Published work

66 published item(s)

preprint2025arXiv

Quasi-Steady-State Approach for Efficient Multiscale Simulation and Optimization of mAb Glycosylation in CHO Cell Culture

Glycosylation is a critical quality attribute for monoclonal antibody (mAb) production, influenced by both process conditions and cellular mechanisms. Multiscale mechanistic models, spanning from the bioreactor to the Golgi apparatus, have been proposed for analyzing the glycosylation process. However, these models are computationally intensive to solve when using traditional methods, making optimization and control challenging. In this work, we propose a quasi-steady-state (QSS) approach for efficiently solving the multiscale glycosylation model. By introducing the QSS assumption and assuming negligible nucleotide sugar donor (NSD) flux for glycosylation in the Golgi, the large-scale partial differential algebraic equation system is converted into a series of independent differential algebraic equation systems. Based on that representation, we develop a three-step QSS simulation method and further reduce computational time through parallel computing and nonuniform time grid strategies. Case studies in simulation, parameter estimation, and dynamic optimization demonstrate that the QSS approach can be more than 300-fold faster than the method of lines, with less than 1.6% relative errors. This work establishes a solid foundation for multiscale model-based optimization and control of the glycosylation process, supporting the implementation of quality by design.

preprint2025arXiv

Ultrahigh-Energy Gamma-ray Emission Associated with Black Hole-Jet Systems

Black holes (BH), one of the most intriguing objects in the universe, can manifest themselves through electromagnetic radiation initiated by the accretion flow. Some stellar-mass BHs drive relativistic jets when accreting matter from their companion stars, forming microquasars. Non-thermal emission from the radio to tera-electronvolt (TeV) gamma-ray band has been observed from microquasars, indicating the acceleration of relativistic particles. Here we report detection of four microquasars (SS 433, V4641 Sgr, GRS 1915+105, MAXI J1820+070) of spectrum extending to the ultrahigh-energy (UHE; photon energy $E>100$ TeV) band and one microquasar (Cygnus X-1) of spectrum approaching 100 TeV, using the Large High Altitude Air Shower Observatory (LHAASO). Notably, the total emission associated with SS 433 cannot be interpreted with a single leptonic component. In the UHE band, its emission is in spatial coincidence with a giant atomic cloud, which is consistent with a hadronic origin. An elongated source is discovered from V4641 Sgr with the spectrum continuing up to 800 TeV. The detection of UHE gamma rays demonstrates that accreting BHs and their environments can operate as extremely efficient accelerators of particles out of 1 peta-electronvolt (PeV), suggesting microquasars to be important contributors to Galactic cosmic rays especially around the `knee' region.

preprint2024arXiv

Advanced Unstructured Data Processing for ESG Reports: A Methodology for Structured Transformation and Enhanced Analysis

In the evolving field of corporate sustainability, analyzing unstructured Environmental, Social, and Governance (ESG) reports is a complex challenge due to their varied formats and intricate content. This study introduces an innovative methodology utilizing the "Unstructured Core Library", specifically tailored to address these challenges by transforming ESG reports into structured, analyzable formats. Our approach significantly advances the existing research by offering high-precision text cleaning, adept identification and extraction of text from images, and standardization of tables within these reports. Emphasizing its capability to handle diverse data types, including text, images, and tables, the method adeptly manages the nuances of differing page layouts and report styles across industries. This research marks a substantial contribution to the fields of industrial ecology and corporate sustainability assessment, paving the way for the application of advanced NLP technologies and large language models in the analysis of corporate governance and sustainability. Our code is available at https://github.com/linancn/TianGong-AI-Unstructure.git.

preprint2022arXiv

A Multiscale Simulation Approach for Germanium-Hole-Based Quantum Processor

A multiscale simulation method is developed to model a quantum dot (QD) array of germanium (Ge) holes for quantum computing. Guided by three-dimensional numerical quantum device simulations of QD structures, an analytical model of the tunnel coupling between the neighboring hole QDs is obtained. Two-qubit entangling quantum gate operations and quantum circuit characteristics of the QD array processor are then modeled. Device analysis of two-qubit Ge hole quantum gates demonstrates faster gate speed, smaller process variability, and less stringent requirement of feature size, compared to its silicon counterpart. The multiscale simulation method allows assessment of the quantum processor circuit performance from a bottom-up, physics-informed perspective. Application of the simulation method to the Ge QD array processor indicates its promising potential for preparing high-fidelity ansatz states in quantum chemistry simulations.

preprint2022arXiv

Flipping of antiferromagnetic to superconducting states in pressurized quasi-one-dimensional manganese-based compounds

One of the universal features of unconventional superconductors is that the superconducting (SC) state is developed in the proximity of an antiferromagnetic (AFM) state. Understanding the interplay between these two states is one of the key issues to uncover the underlying physics of unconventional SC mechanism. Here, we report a pressure-induced flipping of the AFM state to SC state in the quasi-one-dimensional AMn6Bi5 (A = K, Rb, and Cs) compounds. We find that at a critical pressure the AFM state suddenly disappears at a finite temperature and a SC state simultaneously emerges at a lower temperature without detectable structural changes. Intriguingly, all members of the family present the AFM-SC transition at almost the same critical pressures (Pc), though their ambient-pressure unit-cell volumes vary substantially. Our theoretical calculations indicate that the increasing weight of dxz orbital electrons near Fermi energy under the pressure may be the origin of the flipping. These results reveal a diversity of competing nature between the AFM and SC states among the 3d-transition-metal compounds.

preprint2022arXiv

Minimally k-factor-critical graphs for some large k

A graph $G$ of order $n$ is said to be $k$-factor-critical for integers $1\leq k < n$, if the removal of any $k$ vertices results in a graph with a perfect matching. $1$- and $2$-factor-critical graphs are the well-known factor-critical and bicritical graphs, respectively. A $k$-factor-critical graph $G$ is called minimal if for any edge $e\in E(G)$, $G-e$ is not $k$-factor-critical. In 1998, O. Favaron and M. Shi conjectured that every minimally $k$-factor-critical graph of order $n$ has the minimum degree $k+1$ and confirmed it for $k=1, n-2, n-4$ and $n-6$. In this paper, we use a simple method to reprove the above result. As a main result, the further use of this method enables ones to prove the conjecture to be true for $k=n-8$. We also obtain that every minimally $(n-6)$-factor-critical graph of order $n$ has at most $n-Δ(G)$ vertices with the maximum degree $Δ(G)$ for $n-4\leq Δ(G)\leq n-1$.

preprint2022arXiv

Multiscale Modeling of Semimetal Contact to Two-Dimensional Transition Metal Dichalcogenide Semiconductor

A multiscale simulation approach is developed to simulate the contact transport properties between semimetal to a monolayer two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor. The results elucidate the mechanisms for low contact resistance between semimetal and TMDC semiconductor contacts from a quantum transport perspective. The simulation results compare favorably with recent experiments. Furthermore, the results show that the contact resistance of a Bismuth-MoS2 contact can be further reduced by engineering the dielectric environment and doping the TMDC material to <100 $Ω$.$μ$m. The quantum transport simulation indicates the possibility to achieve an ultrashort contact transfer length of ~1 nm, which can allow aggressive scaling of the contact size.

preprint2022arXiv

Nonparametric Decentralized Detection and Sparse Sensor Selection via Multi-Sensor Online Kernel Scalar Quantization

Signal classification problems arise in a wide variety of applications, and their demand is only expected to grow. In this paper, we focus on the wireless sensor network signal classification setting, where each sensor forwards quantized signals to a fusion center to be classified. Our primary goal is to train a decision function and quantizers across the sensors to maximize the classification performance in an online manner. Moreover, we are interested in sparse sensor selection using a marginalized weighted kernel approach to improve network resource efficiency by disabling less reliable sensors with minimal effect on classification performance.To achieve our goals, we develop a multi-sensor online kernel scalar quantization (MSOKSQ) learning strategy that operates on the sensor outputs at the fusion center. Our theoretical analysis reveals how the proposed algorithm affects the quantizers across the sensors. Additionally, we provide a convergence analysis of our online learning approach by studying its relationship to batch learning. We conduct numerical studies under different classification and sensor network settings which demonstrate the accuracy gains from optimizing different components of MSOKSQ and robustness to reduction in the number of sensors selected.

preprint2022arXiv

Observation of three superconducting transitions in the pressurized CDW-bearing compound TaTe2

Transition metal dichalcogenides host a wide variety of lattice and electronic structures, as well as corresponding exotic physical properties, especially under certain tuning conditions. Here, we are the first to report the observation of pressure-induced three superconducting transitions in TaTe2, a charge density wave (CDW) - bearing layered transition-metal dichalcogenide that is metallic but not superconducting at ambient pressure. We find that its CDW state can be easily suppressed upon increasing pressure up to ~ 1 GPa. A superconducting state then emerges from the suppressed CDW state and persists to the pressure about 7 GPa. Unexpectedly, another superconducting state appears at ~ 11 GPa within the same monoclinic (M) structure of its ambient-pressure one. Upon further compression to 21 GPa, a third superconducting state with higher Tc appears from a high-pressure (HP) phase. Our experimental results suggest that the pressure-induced three superconducting transitions in TaTe2 are respectively driven by the suppression of the CDW state, the change of the angle in the M phase and the transition of M-to-HP phase. These results demonstrate not only the versatile nature of this correlated electron system, but also the first experimental example that shows the pressure-induced evolution from a CDW state to three superconducting states driven by different mechanisms.

preprint2022arXiv

Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$

The recent discovery of superconductivity in heavy Fermion compound UTe2, a candidate topological and triplet-paired superconductor, has aroused widespread interest. However, to date, there is no consensus on whether the stoichiometric sample of UTe2 is superconducting or not due to lack of reliable evidence to distinguish the difference between the nominal and real compositions of samples. Here, we are the first to clarify that the stoichiometric UT2 is non-superconducting at ambient pressure and under hydrostatic pressure up to 6 GPa, however we find that it can be compressed into superconductivity by application of quasi-uniaxial pressure. Measurements of resistivity, magnetoresistance and susceptibility reveal that the quasi-uniaxial pressure results in a suppression of the Kondo coherent state seen at ambient pressure, and then leads to a superconductivity initially emerged on the ab-plane at 1.5 GPa. At 4.8 GPa, the superconductivity is developed in three crystallographic directions. The superconducting state coexists with an exotic magnetic ordered state that develops just below the onset temperature of the superconducting transition. The discovery of the quasi-uniaxial-pressure-induced superconductivity with exotic magnetic state in the stoichiometric UTe2 not only provide new understandings on this compound, but also highlight the vital role of Te deficiency in developing the superconductivity at ambient pressures.

preprint2022arXiv

RefineGAN: Universally Generating Waveform Better than Ground Truth with Highly Accurate Pitch and Intensity Responses

Most GAN(Generative Adversarial Network)-based approaches towards high-fidelity waveform generation heavily rely on discriminators to improve their performance. However, GAN methods introduce much uncertainty into the generation process and often result in mismatches of pitch and intensity, which is fatal when it comes to sensitive use cases such as singing voice synthesis(SVS). To address this problem, we propose RefineGAN, a high-fidelity neural vocoder focused on the robustness, pitch and intensity accuracy, and high-speed full-band audio generation. We applyed a pitch-guided refine architecture with a multi-scale spectrogram-based loss function to help stabilize the training process and maintain the robustness of the neural vocoder while using the GAN-based training method. Audio generated using this method shows a better performance in subjective tests when compared with the ground-truth audio. This result shows that the fidelity is even improved during the waveform reconstruction by eliminating defects produced by recording procedures. Moreover, it shows that models trained on a specified type of data can perform on totally unseen language and unseen speaker identically well. Generated sample pairs are provided onhttps://timedomain-tech.github.io/refinegan/.

preprint2022arXiv

Universal and Efficient p-Doping of Organic Semiconductors by Electrophilic Attack of Cations

Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to a small number of OSCs, seriously limiting their general application. Herein, we reveal a novel p-doping mechanism by investigating the interactions between the dopant trityl cation and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of alkylated ions that induce electron transfer from neighboring P3HT chains, resulting in p-doping. This unique p-doping mechanism can be employed to dope various OSCs including those with high ionization energy (IE=5.8 eV). Moreover, this doping mechanism endows trityl cation with strong doping ability, leading to polaron yielding efficiency of 100 % and doping efficiency of over 80 % in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities towards highly efficient doping of OSCs.

preprint2021arXiv

A wavelength-tunable mode-locked Yb-doped fiber laser based on nonlinear Kerr beam clean-up effect

We demonstrate a novel approach to achieve wavelength-tunable ultrashort pulses from an all-fiber mode-locked laser with a saturable absorber based on nonlinear Kerr beam clean-up effect. This saturable absorber was formed by a single-mode fiber spliced to a graded-index multimode fiber, and its tunable band-pass filter effect is studied by a numerical model. By adjusting the bending condition of graded-index multimode fiber, the laser could produce dissipative soliton pulses with their central wavelength tunable from1040 nm to 1063 nm. The pulse width of output laser could be compressed externally to 791 fs, and the signal to noise ratio of its radio frequency spectrum was measured to be 75.5 dB. This work provides a new idea for the design of wavelength-tunable mode-locked laser which can be used as an attractive light source in communication system.

preprint2021arXiv

The Disk Veiling Effect of the Black Hole Low-Mass X-ray Binary A0620-00

The optical light curves of quiescent black hole low-mass X-ray binaries often exhibit significant non-ellipsoidal variabilities, showing the photospheric radiation of the companion star is veiled by other source of optical emission. Assessing this "veiling" effect is critical to the black hole mass measurement. Here in this work, we carry out a strictly simultaneous spectroscopic and photometric campaign on the prototype of black hole low-mass X-ray binary A0620-00. We find that for each observation epoch, the extra optical flux beyond a pure ellipsoidal modulation is positively correlated with the fraction of veiling emission, indicating the accretion disk contributes most of the non-ellipsoidal variations. Meanwhile, we also obtain a K2V spectral classification of the companion, as well as the measurements of the companion's rotational velocity $v \sin i = 83.8\pm1.9$ km s$^{-1}$ and the mass ratio between the companion and the black hole $q=0.063\pm0.004$.

preprint2021arXiv

Universal quantum transition from superconducting to insulating states in pressurized Bi2Sr2CaCu2O8+δ superconductors

Copper oxide superconductors have continually fascinated the communities of condensed matter physics and material sciences because they host the highest ambient-pressure superconducting transition temperature (Tc) and mysterious physics. Searching for the universal correlation between the superconducting state and its normal state or neighboring ground state is believed to be an effective way for finding clues to elucidate the underlying mechanism of the superconductivity. One of the common pictures for the copper oxide superconductors is that a well-behaved metallic phase will present after the superconductivity is entirely suppressed by chemical doping or application of the magnetic field. Here, we report a different observation of universal quantum transition from superconducting state to insulating-like state under pressure in the under-, optimally- and over-doped Bi2212 superconductors with two CuO2 planes in a unit cell. The same phenomenon has been also found in the Bi2201 superconductor with one CuO2 plane and the Bi2223 superconductor with three CuO2 planes in a unit cell. These results not only provide fresh information but also pose a new challenge for achieving a unified understanding on the underlying physics of the high-Tc superconductivity.

preprint2020arXiv

Characterization of Cooperators in Quorum Sensing with 2D Molecular Signal Analysis

In quorum sensing (QS), bacteria exchange molecular signals to work together. An analytically-tractable model is presented for characterizing QS signal propagation within a population of bacteria and the number of responsive cooperative bacteria (i.e., cooperators) in a two-dimensional (2D) environment. Unlike prior works with a deterministic topology and a simplified molecular propagation channel, this work considers continuous emission, diffusion, degradation, and reception among randomly-distributed bacteria. Using stochastic geometry, the 2D channel response and the corresponding probability of cooperation at a bacterium are derived. Based on this probability, new expressions are derived for the moment generating function and different orders of moments of the number of cooperators. The analytical results agree with the simulation results obtained by a particle-based method. In addition, the Poisson and Gaussian distributions are compared to approximate the distribution of the number of cooperators and the Poisson distribution provides the best overall approximation. The derived channel response can be generally applied to any molecular communication model where single or multiple transmitters continuously release molecules into a 2D environment. The derived statistics of the number of cooperators can be used to predict and control the QS process, e.g., predicting and decreasing the likelihood of biofilm formation.

preprint2020arXiv

Cost-effectiveness Analysis of Antiepidemic Policies and Global Situation Assessment of COVID-19

With a two-layer contact-dispersion model and data in China, we analyze the cost-effectiveness of three types of antiepidemic measures for COVID-19: regular epidemiological control, local social interaction control, and inter-city travel restriction. We find that: 1) intercity travel restriction has minimal or even negative effect compared to the other two at the national level; 2) the time of reaching turning point is independent of the current number of cases, and only related to the enforcement stringency of epidemiological control and social interaction control measures; 3) strong enforcement at the early stage is the only opportunity to maximize both antiepidemic effectiveness and cost-effectiveness; 4) mediocre stringency of social interaction measures is the worst choice. Subsequently, we cluster countries/regions into four groups based on their control measures and provide situation assessment and policy suggestions for each group.

preprint2020arXiv

Dualism of the 4f electrons and high-temperature antiferromagnetism of the heavy-fermion compound YbCoC$_{2}$

We report on the first study of the noncentrosymmetric ternary carbide YbCoC$_{2}$. Our magnetization, specific heat, resistivity and neutron diffraction measurements consistently show that the system behaves as a heavy-fermion compound, displaying an amplitude-modulated magnetic structure below the Néel temperature reaching $T_{N}$ = 33 K under pressure. Such a large value, being the highest among the Yb-based systems, is explained in the light of our ab initio calculations, which show that the 4f electronic states of Yb have a dual nature -- i.e., due to their strong hybridization with the 3d states of Co, 4f states expose both localized and itinerant properties.

preprint2020arXiv

Generalized bioinspired approach to a daytime radiative cooling "skin"

Energy-saving cooling materials with strong operability are desirable towards sustainable thermal management. Inspired by the cooperative thermo-optical effect in fur of polar bear, we develop a flexible and reusable cooling skin via laminating a polydimethylsiloxane film with a highly-scattering polyethylene aerogel. Owing to its high porosity of 97.9% and tailored pore size of 3.8 +- 1.4 micrometers, superior solar reflectance of 0.96 and high transparency to irradiated thermal energy of 0.8 can be achieved at a thickness of 2.7 mm. Combined with low thermal conductivity of 0.032 W/m/K of the aerogel, the cooling skin exerts midday sub-ambient temperature drops of 5-6 degrees in a metropolitan environment, with an estimated limit of 14 degrees under ideal service conditions. We envision that this generalized bilayer approach will construct a bridge from night-time to daytime radiative cooling and pave the way for economical, scalable, flexible and reusable cooling materials.

preprint2020arXiv

Localized-to-itinerant transition preceding antiferromagnetic quantum critical point and gapless superconductivity in CeRh$_{0.5}$Ir$_{0.5}$In$_5$

A fundamental problem posed from the study of correlated electron compounds, of which heavy-fermion systems are prototypes, is the need to understand the physics of states near a quantum critical point (QCP). At a QCP, magnetic order is suppressed continuously to zero temperature and unconventional superconductivity often appears. Here, we report pressure ($P$) -dependent $^{115}$In nuclear quadrupole resonance (NQR) measurements on heavy-fermion antiferromagnet CeRh$_{0.5}$Ir$_{0.5}$In$_5$. These experiments reveal an antiferromagnetic (AF) QCP at $P_{\rm c}^{\rm AF}$ = 1.2 GPa where a dome of superconductivity reaches a maximum transition temperature $T_{\rm c}$. Preceding $P_{\rm c}^{\rm AF}$, however, the NQR frequency $ν_{\rm Q}$ undergoes an abrupt increase at $P_{\rm c}^{\rm *}$ = 0.8 GPa in the zero-temperature limit, indicating a change from localized to itinerant character of cerium's $f$-electron and associated small-to-large change in the Fermi surface. At $P_{\rm c}^{\rm AF}$ where $T_{\rm c}$ is optimized, there is an unusually large fraction of gapless excitations well below $T_{\rm c}$ that implicates spin-singlet, odd-frequency pairing symmetry.

preprint2020arXiv

Periodic Solutions to Reversible Second Order Autonomous Systems with Commensurate Delays

Existence and spatio-temporal patterns of periodic solutions to second order reversible equivariant autonomous systems with commensurate delays are studied using the Brouwer $O(2) \times Γ\times \mathbb Z_2$-equivariant degree theory, where $O(2)$ is related to the reversing symmetry, $Γ$ reflects the symmetric character of the coupling in the corresponding network and $\mathbb Z_2$ is related to the oddness of the right-hand-side. Abstract results are supported by a concrete example with $Γ= D_6$ -- the dihedral group of order 12.

preprint2020arXiv

Quantum phases of SrCu2(BO3)2 from high-pressure thermodynamics

We report heat capacity measurements of SrCu$_2$(BO$_3$)$_2$ under high pressure along with simulations of relevant quantum spin models and map out the $(P,T)$ phase diagram of the material. We find a first-order quantum phase transition between the low-pressure quantum dimer paramagnet and a phase with signatures of a plaquette-singlet state below T = $2$ K. At higher pressures, we observe a transition into a previously unknown antiferromagnetic state below $4$ K. Our findings can be explained within the two-dimensional Shastry-Sutherland quantum spin model supplemented by weak inter-layer couplings. The possibility to tune SrCu$_2$(BO$_3$)$_2$ between the plaquette-singlet and antiferromagnetic states opens opportunities for experimental tests of quantum field theories and lattice models involving fractionalized excitations, emergent symmetries, and gauge fluctuations.

preprint2020arXiv

Reemergence of superconductivity in pressurized quasi-one-dimensional superconductor K2Mo3As3

Here we report a pressure-induced reemergence of superconductivity in recently discovered superconductor K2Mo3As3, which is the first experimental case observed in quasi-one-dimensional superconductors. We find that, after full suppression of the ambient-pressure superconducting (SC-I) state at 8.7 GPa, an intermediary non-superconducting state sets in and prevails to the pressure up to 18.2 GPa, however, above this pressure a new superconducting (SC-II) state appears unexpectedly. High pressure x-ray diffraction measurements demonstrate that the pressure-induced dramatic change of the lattice parameter c contributes mainly to the emergence of the SC-II state. Combined with the theioretical calculations on band strcture, our results suggest that the reemergemce of superconductivity is associated with the change of the complicated interplay among different orbital electrons, driven by the pressure-induced unisotropic change of the lattice.

preprint2019arXiv

Hall coefficient diagnostics of surface state in pressurized SmB6

In this study, we report the first results of the high-pressure Hall coefficient (RH) measurements in the putative topological Kondo insulator SmB6 up to 37 GPa. Below 10 GPa, our data reveal that RH(T) exhibits a prominent peak upon cooling below 20 K. Remarkably, the temperature at which surface conduction dominates coincides with the temperature of the peak in RH(T). The temperature dependent resistance and Hall coefficient can be well fitted by a two-channel model with contributions from the metallic surface and the thermally activated bulk states. When the bulk of SmB6 becomes metallic and magnetic at ~ 10 GPa, both the RH(T) peak and the resistance plateau disappear simultaneously. Our results indicate that the RH(T) peak is a fingerprint to diagnose the presence of a metallic surface state in SmB6. The high-pressure magnetic state of SmB6 is robust to 180 GPa, and no evidence of superconductivity is observed in the metallic phase.

preprint2016arXiv

Correlation between non-centrosymmetry and superconductivity in quasi-one-dimensional compounds A2Cr3As3 (A=K, Rb)

Non-centrosymmetric superconductors, whose crystal structure is absent of inversion symmetry, have recently received special attentions due to the expectation of unconventional pairings and exotic physics associated with such pairings. The newly discovered superconductors A2Cr3As3 (A=K, Rb), featured by the quasi-one dimensional structure with conducting CrAs chains, belongs to such kind of superconductor. In this study, we are the first to report the finding that the superconductivity of A2Cr3As3 (A=K, Rb) has a positive correlation with the extent of non-centrosymmetry. Our in-situ high pressure ac susceptibility and synchrotron x-ray diffraction measurements reveal that the larger bond angle of As-Cr-As in the CrAs chains can be taken as a key factor controlling superconductivity. While the smaller bond angle and the distance between the CrAs chains also affect the superconductivity due to their structural connections with the angle. We find that the larger value of the difference between the larger and samller angles, which is associated with the extent of the non-centrosymmetry of the lattice structure, is in favor of superconductivity. These results are expected to shed a new light on the underlying mechanism of the superconductivity in these Q1D superconductors and also to provide new perspective in understanding other non-centrosymmetric superconductors.

preprint2016arXiv

Reversible tuning of superconductivity in pressurized qausi-one-dimensional A2Cr3As3 (A=K and Rb)

In-situ hydrostatic and uniaxial high pressure studies were performed on recently discovered CrAs-based qausi-one-dimensional superconductors A2Cr3As3 (A=K and Rb). The established Pressure-Temperature phase diagram in this study clearly demonstrates that either hydrostatic pressure or uniaxial pressure globally suppresses the superconducting transition temperature (Tc), and the latter is more effective than the former. Interestingly, in the same hydrostatic pressure environment, the suppressing rate of Tc in Rb2Cr3As3 is nearly twice as that of K2Cr3As3. Significantly, the reduced Tc in these superconductors can fully recover to its ambient-pressure value after the applied pressure is entirely released. Our results suggest that the bonding distance and angle between Cr-Cr in the Cr3As3 chains are the key factor in determining Tc and that the optimal lattice for superconductivity is hosted in the pristine K2Cr3As3.

preprint2015arXiv

Breakdown of Three-dimensional Dirac Semimetal State in pressurized Cd3As2

We report the first observation of a pressure-induced breakdown of the 3D-DSM state in Cd3As2, evidenced by a series of in-situ high-pressure synchrotron X-ray diffraction (XRD) and single crystal transport measurements. We find that Cd3As2 undergoes a structural phase transition from a metallic tetragonal (T) phase in space group I41/acd to a semiconducting monoclinic (M) phase in space group P21/c at critical pressure 2.57 GPa, above this pressure, an activation energy gap appears, accompanied by distinct switches in Hall resistivity slope and electron mobility. These changes of crystal symmetry and corresponding transport properties manifest the breakdown of the 3D-DSM state in pressurized Cd3As2.

preprint2015arXiv

Correlation between intercalated magnetic layers and superconductivity in pressurized EuFe2(As0.81P0.19)2

We report comprehensive high pressure studies on correlation between intercalated magnetic layers and superconductivity in EuFe2(As0.81P0.19)2 single crystal through in-situ high pressure resistance, specific heat, X-ray diffraction and X-ray absorption measurements. We find that an unconfirmed magnetic order of the intercalated layers coexists with superconductivity in a narrow pressure range 0-0.5GPa, and then it converts to a ferromagnetic (FM) order at pressure above 0.5 GPa, where its superconductivity is absent. The obtained temperature-pressure phase diagram clearly demonstrates that the unconfirmed magnetic order can emerge from the superconducting state. In stark contrast, the superconductivity cannot develop from the FM state that is evolved from the unconfirmed magnetic state. High pressure X-ray absorption (XAS) measurements reveal that the pressure-induced enhancement of Eu's mean valence plays an important role in suppressing the superconductivity and tuning the transition from the unconfirmed magnetic state to a FM state. The unusual interplay among valence state of Eu ions, magnetism and superconductivity under pressure may shed new light on understanding the role of the intercalated magnetic layers in Fe-based superconductors.

preprint2014arXiv

Atomically thin p-n junctions with van der Waals heterointerfaces

Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes defined by the spatial extent of this region. With the advent of atomically thin van der Waals (vdW) materials and their heterostructures, we are now able to realize a p-n junction at the ultimate quantum limit. In particular, vdW junctions composed of p- and n-type semiconductors each just one unit cell thick are predicted to exhibit completely different charge transport characteristics than bulk junctions. Here we report the electronic and optoelectronic characterization of atomically thin p-n heterojunctions fabricated using vdW assembly of transition metal dichalcogenides (TMDCs). Across the p-n interface, we observe gate-tuneable diode-like current rectification and photovoltaic response. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances collection of the photoexcited carriers. The atomically scaled vdW p-n heterostructures presented here constitute the ultimate quantum limit for functional electronic and optoelectronic components.

preprint2014arXiv

Connection between ambient-pressure and pressure-induced superconducting phases in alkaline iron selenide superconductors

A unique platform for investigating the correlation between the antiferromagnetic (AFM) and superconducting (SC) states in high temperature superconductors is created by the discovery of alkaline iron selenide superconductors which are composed of an AFM insulating phase and a SC phase separated spatially. Our previous studies showed that pressure can fully suppress the superconductivity of ambient-pressure superconducting phase (SC-I) and AFM order simultaneously, then induce another superconducting phase (SC-II) at higher pressure. Consequently, the connection between the two superconducting phases becomes an intriguing issue. In this study, on the basis of observing pressure-induced reemergence of superconductivity in Rb0.8Fe2-ySe2-xTex (x=0, 0.19 and 0.28) superconductors, we find that the superconductivity of the SC-I and SC-II phases as well as the AFM ordered state can be synchronously tuned by Te doping and disappear together at the doping level of x=0.4. We propose that the two superconducting phases are connected by the AFM phase, in other words, the state of long-ranged AFM order plays a role in giving rise to superconductivity of the SC-I phase, while the fluctuation state of the suppressed AFM phase drives the emergence of SC-II phase. These results comprehensively demonstrate the versatile roles of AFM states in stabilizing and developing superconductivity in the alkaline iron selenide superconductors.

preprint2014arXiv

Operating Principles of Vertical Transistors Based on Monolayer Two-Dimensional Semiconductor Heterojunctions

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.

preprint2014arXiv

Performance Analysis of Arbitrarily-Shaped Underlay Cognitive Networks: Effects of Secondary User Activity Protocols

This paper analyzes the performance of the primary and secondary users (SUs) in an arbitrarily-shaped underlay cognitive network. In order to meet the interference threshold requirement for a primary receiver (PU-Rx) at an arbitrary location, we consider different SU activity protocols which limit the number of active SUs. We propose a framework, based on the moment generating function (MGF) of the interference due to a random SU, to analytically compute the outage probability in the primary network, as well as the average number of active SUs in the secondary network. We also propose a cooperation-based SU activity protocol in the underlay cognitive network which includes the existing threshold-based protocol as a special case. We study the average number of active SUs for the different SU activity protocols, subject to a given outage probability constraint at the PU and we employ it as an analytical approach to compare the effect of different SU activity protocols on the performance of the primary and secondary networks.

preprint2014arXiv

Performance limits projection of black phosphorous field-effect transistors

Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction. The effective masses are lower in the "armchair" direction which provides higher drive current at the same biasing. The degree of anisotropy is higher for the holes, which improves the performance of p-type devices. The intrinsic delay of 20 nm BP FETs is in the range of 50 fs at ON-/OFF-current ratio of 4 orders. Monolayer BP FETs outperform both MoS$_2$ and Si FETs for both n- and p-type devices in terms of ballistic performance limits, due to highly anisotropic band structure.

preprint2014arXiv

Robust antiferromagnetism preventing superconductivity in pressurized Ba0.61K0.39Mn2Bi2

Here, we report that K-doped BaMn2Bi2 shows no experimental evidence of superconductivity down to 1.5 K under pressures up to 35.6 GPa, however, a tetragonal to an orthorhombic phase transition is observed at pressure of 20 GPa. Theoretical calculations for the tetragonal and orthorhombic phases, on basis of our high-pressure XRD data, find that the AFM order is robust in both of the phases in pressurized Ba0.61K0.39Mn2Bi2. Our experimental and theoretical results suggest that the K-doped BaMn2Bi2 belongs to a strong Hunds AFM metal with a hybridization of localized spin electrons and itinerant electrons, and that its robust AFM order essentially prevents the emergence of superconductivity.

preprint2014arXiv

Simulation of Schottky-Barrier Phosphorene Transistors

Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced ambipolar I-V characteristics and significant increase of the minimal leakage current. The problem of leakage is especially severe when the gate insulator is thin and the number of layer is large, but can be effectively suppressed by reducing phosphorene to mono or bilayer. Different from two-dimensional graphene and layered dichalcogenide materials, both the ON-current of the phosphorene SBFETs and the metal-semiconductor contact resistance between metal and phosphorene strongly depend on the transport crystalline direction.

preprint2014arXiv

The role of 245 phase in alkaline iron selenide superconductors revealed by high pressure studies

Here we show that a pressure of about 8 GPa suppresses both the vacancy order and the insulating phase, and a further increase of the pressure to about 18 GPa induces a second transition or crossover. No superconductivity has been found in compressed insulating 245 phase. The metallic phase in the intermediate pressure range has a distinct behavior in the transport property, which is also observed in the superconducting sample. We interpret this intermediate metal as an orbital selective Mott phase (OSMP). Our results suggest that the OSMP provides the physical pathway connecting the insulating and superconducting phases of these iron selenide materials.

preprint2013arXiv

A Tractable Framework for Exact Probability of Node Isolation and Minimum Node Degree Distribution in Finite Multi-hop Networks

This paper presents a tractable analytical framework for the exact calculation of probability of node isolation and minimum node degree distribution when $N$ sensor nodes are independently and uniformly distributed inside a finite square region. The proposed framework can accurately account for the boundary effects by partitioning the square into subregions, based on the transmission range and the node location. We show that for each subregion, the probability that a random node falls inside a disk centered at an arbitrary node located in that subregion can be expressed analytically in closed-form. Using the results for the different subregions, we obtain the exact probability of node isolation and minimum node degree distribution that serves as an upper bound for the probability of $k$-connectivity. Our theoretical framework is validated by comparison with the simulation results and shows that the minimum node degree distribution serves as a tight upper bound for the probability of $k$-connectivity. The proposed framework provides a very useful tool to accurately account for the boundary effects in the design of finite wireless networks.

preprint2013arXiv

Observation of antiferromagnetic order collapse in the pressurized insulator LaMnPO

The emergence of superconductivity in the iron pnictide and cuprate high temperature superconductors usually accompanies the suppression of an antiferromagnetically (AFM) ordered state in a corresponding parent compound through the use of chemical doping or external pressure1-5. A great deal of effort has been made to find superconductivity in Mn-based compounds6-14, which are thought to bridge the gap between the two families of high temperature superconductors7,15,16, but long-ranged AFM order was not successfully suppressed via chemical doping in these investigations. Here we report the first observation of the pressure-induced elimination of long-ranged AFM order in LaMnPO single crystals that are iso-structural to the LaFeAsO superconductor15,17. By combining in-situ high pressure resistance and ac susceptibility measurements, we found that LaMnPO undergoes a crossover from an AFM insulating to an AFM metallic state at a pressure ~20 GPa and that the long-ranged AFM order collapses at a higher pressure ~32 GPa. Our findings are of importance to explore potential superconductivity in Mn-based compounds and to shed new light on the underlying mechanism of high temperature superconductivity.

preprint2013arXiv

Outage Probability in Arbitrarily-Shaped Finite Wireless Networks

This paper analyzes the outage performance in finite wireless networks. Unlike most prior works, which either assumed a specific network shape or considered a special location of the reference receiver, we propose two general frameworks for analytically computing the outage probability at any arbitrary location of an arbitrarily-shaped finite wireless network: (i) a moment generating function-based framework which is based on the numerical inversion of the Laplace transform of a cumulative distribution and (ii) a reference link power gain-based framework which exploits the distribution of the fading power gain between the reference transmitter and receiver. The outage probability is spatially averaged over both the fading distribution and the possible locations of the interferers. The boundary effects are accurately accounted for using the probability distribution function of the distance of a random node from the reference receiver. For the case of the node locations modeled by a Binomial point process and Nakagami-$m$ fading channel, we demonstrate the use of the proposed frameworks to evaluate the outage probability at any location inside either a disk or polygon region. The analysis illustrates the location dependent performance in finite wireless networks and highlights the importance of accurately modeling the boundary effects.

preprint2012arXiv

Modeling of a vertical tunneling graphene heterojunction field-effect transistor

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work function deference between the graphene contact and the tunneling channel material. Modulation of the bottom-graphene-contact plays an important role in determining the switching characteristic of the device. Due to the electrostatic short-channel-effects stemming from the vertical-FET structure, the output I-V characteristics do not saturate. The scaling behaviors the vertical-FET as a function of the gate insulator thickness and the thickness of the tunneling channel material are examined.

preprint2012arXiv

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.

preprint2012arXiv

Photoproduction of the charged top-pions at the LHeC

The top triangle moose $(TTM)$ model, which can be seen as the deconstructed version of the topcolor-assisted technicolor ($TC2$) model, predicts the existence of the charged top-pions $ π_{t}^{\pm}$ in low energy spectrum. In the context of this model, we consider photoproduction of $π^{\pm}_{t}$ via the subprocesses $γb\to t π_{t}^{-}$ and $γ\bar{b}\to \bar{t} π_{t}^{+}$ at the large hadron-electron collider ($LHeC$), in which high energy photon beams are generated by using the Compton backscatting method. We find that, as long as the charged top-pions are not too heavy, they can be abundantly produced via $γb$ collision.

preprint2012arXiv

Pressure-Driven Quantum Criticality in An Iron-Selenide Superconductor

The discovery of superconductivity of about 30 K in iron selenides with very large magnetic moments simulates the examination of completing orders. Here we report a finding of pressure- induced suppression of the superconducting transition temperature Tc and enhancement of the temperature of the resistance hump TH through charge transfer between two iron sites with different occupancies. The activation energy for the electric transport of the high-temperature resistance is observed to go to zero at a critical pressure of 8.7 GPa, at which superconductivity tends to disappear and the semiconductor-to-metal transition takes place. Beyond the critical point, the resistance exhibits a metallic behavior over the whole temperature range studied. All these features indicate the existence of quantum criticality in iron-selenide superconductors.

preprint2012arXiv

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

preprint2012arXiv

Reemerging superconductivity at 48 K across quantum criticality in iron chalcogenides

Pressure plays an essential role in the induction1 and control2,3 of superconductivity in iron-based superconductors. Substitution of a smaller rare-earth ion for the bigger one to simulate the pressure effects has surprisingly raised the superconducting transition temperature Tc to the record high 55 K in these materials4,5. However, Tc always goes down after passing through a maximum at some pressure and the superconductivity eventually tends to disappear at sufficiently high pressures1-3. Here we show that the superconductivity can reemerge with a much higher Tc after its destruction upon compression from the ambient-condition value of around 31 K in newly discovered iron chalcogenide superconductors. We find that in the second superconducting phase the maximum Tc is as high as 48.7 K for K0.8Fe1.70Se2 and 48 K for (Tl0.6Rb0.4)Fe1.67Se2, setting the new Tc record in chalcogenide superconductors. The presence of the second superconducting phase is proposed to be related to pressure-induced quantum criticality. Our findings point to the potential route to the further achievement of high-Tc superconductivity in iron-based and other superconductors.

preprint2012arXiv

Strain induced conductance modulation in graphene grain boundary

Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystalline graphene with GBs is an atomically thin membrane that can sustain extraordinary amount of strain. Here, by using atomistic quantum transport numerical simulations, we examine modulation of electrical transport properties of graphene GBs. The results indicate the modulation of transport gap and electrical conductance strongly depends on the topological structure of the GB. The transport gap of certain GBs can be significantly widened by strain, which is useful for improving the on-off ratio in potential transistor applications and for applications as monolayer strain sensors

preprint2011arXiv

Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors

High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100nm graphene FET, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20nm. At a channel length of 20nm, the intrinsic cut-off frequency remains at a couple of THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance and quantum capacitance, which is about 100GHz \cdot μm divided by the gate length.

preprint2011arXiv

Correlation between superconductivity and antiferromagnetism in Rb0.8Fe2Se2-xTex single crystals

We report the first experimental evidence for the intimate connection between superconductivity and antiferromagnetism in Rb0.8Fe2Se2-xTex single crystal under negative chemical pressure by substituting Se with isovalent Te atoms. Electrical resistance measurements in the temperature range from 4 K to 550 K demonstrate that both superconducting transition temperature (Tc) and Neel temperature (TN) were suppressed continuously with the lattice expansion. When the Te concentration x in Rb0.8Fe2Se2-xTex approaches 0.3, the superconducting transition temperature Tc is completely suppressed and the sample behaves like a semiconductor, meanwhile the characteristic peak of antiferromagnetic transition on resistance curve disappears. Our observation suggests that the pressure-induced lattice expansion can be used to tune the correlativity of superconductivity and antiferromagnetism.

preprint2011arXiv

Effects of edge chemistry doping on graphene nanoribbon mobility

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent experiments. The carrier mobility limited by edge doping is studied as a function of the GNR width, doping density, and carrier density by using ab initio density functional and parameterized tight binding simulations combined with the non-equilibrium Green's function formalism for quantum transport. The results indicate that for GNRs wider than about 4nm, the mobility scales approximately linearly with the GNR width, inversely proportional to the edge doping concentration and decreases for an increasing carrier density. For narrower GNRs, dependence of the mobility on the GNR width and carrier density can be qualitatively different.

preprint2011arXiv

Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires

Graphene nanoribbons with perfect edges are predicted to exhibit interesting electronic and spintronic properties, notably quantum-confined bandgaps and magnetic edge states. However, graphene nanoribbons produced by lithography have, to date, exhibited rough edges and low-temperature transport characteristics dominated by defects, mainly variable range hopping between localized states in a transport gap near the Dirac point. Here, we report that one- and two-layer nanoribbons quantum dots made by unzipping carbon nanotubes10 exhibit well-defined quantum transport phenomena, including Coulomb blockade, Kondo effect, clear excited states up to ~20meV, and inelastic co-tunnelling. Along with signatures of intrinsic quantum-confined bandgaps and high conductivities, our data indicate that the nanoribbons behave as clean quantum wires at low temperatures, and are not dominated by defects.

preprint2011arXiv

Highly Quantum-Confined InAs Nanoscale Membranes

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors.

preprint2011arXiv

Inelastic Phonon Scattering in Graphene FETs

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport agreeing with experiments is observed. While low field behavior has previously been mostly attributed to elastic impurity scattering in earlier studies, it is found in the study that even low field mobility is affected by inelastic phonon scattering in recent graphene FET experiments reporting high mobilities . As the FET is biased in the saturation regime, the average carrier injection velocity at the source end of the device is found to remain almost constant with regard to the applied gate voltage over a wide voltage range, which results in significantly improved transistor linearity compared to what a simpler model would predict. Physical mechanisms for good linearity are explained, showing the potential of graphene FETs for analogue electronics applications.

preprint2011arXiv

Multilayer graphene nanoribbon under vertical electric field

We study the effect of vertical electric-field (E-field) on the electronic properties of the multilayer armchair graphene nanoribbon (aGNR). Under E-field, the band structure of a bilayer aGNR undergoes interesting transformations such as change in the electron velocity, sign of the electron effective mass, band gap, the position of the band gap in the momentum space. Depending on the width of the aGNR and the applied E-field, the band gap of the aGNR may either be increased or decreased. When the applied E-field is above a critical value, the band gap of the bilayer aGNR is identical to that of the bilayer graphene, independent of the width. We also show that, for semiconducting multilayer aGNR with more than two layers, the band gap decreases with increasing E-field, resulting in a semiconductor-to-metallic transition. This can be utilized to enhance the performance of a graphene based transistor devices.

preprint2011arXiv

Multilayer graphene under vertical electric field

We study the effect of vertical electric field (E-field) on the electronic properties of multilayer graphene. We show that the effective mass, electron velocity and density-of-state of a bilayer graphene are modified under the E-field. We also study the transformation of the band structure of multilayer graphenes. E-field induces finite (zero) bandgap in the even (odd)-layer ABA-stacking graphene. On the other hand, finite bandgap is induced in all ABC-stacking graphene. We also identify the optimum E-field to obtain the maximum bandgap in the multilayer graphenes. Finally we compare our results with the experimental results of a field-effect-transistor.

preprint2011arXiv

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

The performance limits of monolayer transition metal dichalcogenide transistors are examined with a ballistic MOSFET model. Using ab-initio theory, we calculate the band structures of two-dimensional (2D) transition metal dichalco-genide (MX2). We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors are better compared to the silicon transistors if thin high-κ gate insulator is used. This makes monolayer MX2 promising 2D materials for future nanoelectronic device applications.

preprint2010arXiv

Band Gap of Strained Graphene Nanoribbons

The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to zero even if a large strain is applied, the band gap of graphene nanoribbon (GNR) is sensitive to both uniaxial and shears strains. The effect of strain on the electronic structure of a GNR strongly depends on its edge shape and structural indices. For an armchair GNR, uniaxial weak strain changes the band gap in a linear fashion, and for a large strain, it results in periodic oscillation of the band gap. On the other hand, shear strain always tend to reduce the band gap. For a zigzag GNR, the effect of strain is to change the spin polarization at the edges of GNR, thereby modulate the band gap. A simple analytical model is proposed to interpret the band gap responds to strain in armchair GNR, which agrees with the numerical results.

preprint2010arXiv

Phase Diagram of Pressure-induced Superconductivity and its Relation to Hall Coefficient in Bi2Te3 Single Crystal

Pressure-induced superconductivity and its relation to corresponding Hall coefficient (RH) have been reported for Bi2Te3, one of known topological insulators. A full phase diagram is presented which shows a complex dependence of the superconducting transition temperature as a function of pressure over an extensive range. High-pressure RH measurements reveal a close relation of these complex behaviors, particularly, a dramatic change of dRH/dP before structural phase transition and a pressure-induced crossover on RH in the high pressure phase were observed.

preprint2010arXiv

Physical origin of superconductivity in EuFe2As1.4P0.6 and EuFe2As2: pressure-induce valence change of europium

Superconductivity can be realized in Eu-containing pnictides by application of chemical (internal) and physical (external) pressure, the intrinsic physical mechanism of which attracts much attention in physics community. Here we present the experimental evidence for the valence change of europium in compounds of EuFe2As1.4P0.6 exposed to ambient pressure and EuFe2As2 to high pressure by x-ray absorption measurements on L3-Eu edge. We find that the absorption spectrum of EuFe2As1.4P0.6 at ambient pressure shows clear spectra weight transfer from a divalent to a trivalent state. Furthermore, application of pressure on EuFe2As2 using a diamond anvil cell shows a similar behavior of valence transition as EuFe2As1.4P0.6. These findings are the first observation of superconductivity mechanized by valence change in pnictides superconductors and elucidate the intrinsic physical origin of superconductivity in EuFe2As1.4P0.6 and compressed EuFe2As2.

preprint2008arXiv

Diameter-Dependent Electron Mobility of InAs Nanowires

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.

preprint2007arXiv

A Computational Study of Vertical Partial Gate Carbon Nanotube FETs

A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic approach. We show that the underlap between the gate and the bottom electrode (required for isolation between electrodes) is advantageous for transistor operation because it suppresses ambipolar conduction. A vertical CNTFET with a gate length that covers only 1/6 of the channel length has a much smaller minimum leakage current than one without underlap, while maintaining comparable on current. Both n-type and p-type transistor operations with balanced performance metrics can be achieved on a single partial gate FET by using proper bias schemes. Even with a gate underlap, it is demonstrated that increasing the CNT diameter still leads to a simultaneous increase of on current and minimum leakage current. Along with a partial gate, the simulated transistor features a significant amount of air between the surface of the channel CNT and the gate insulator, as is caused by the vertical CNT growth process. Filing this pore with a high-k insulator is shown to have the potential to decrease the on current, due to electrostatic phenomena at the source-channel contact.

preprint2007arXiv

Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons

Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly non-uniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics.

preprint2005arXiv

High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm and bandgap ~ 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70mV/decade, negligible ambipolar conduction and high on/off ratios up to 10^6 at a bias voltage of 0.5V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.

preprint2004arXiv

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.

preprint2003arXiv

Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with metal source/drain, or devices commonly referred to as Schottky barrier FETs.